New Materials for Three Dimensional Ferroelectric Microelectronics
In the last decade, there have been major changes in the families of ferroelectric materials available for integration with CMOS electronics. These new materials, including Hf1-xZrxO2, Al1-xScxN,
1-xBxN and Zn1-xMgxO, offer the possibility of new functionalities. This talk will discuss the possibility of exploiting the 3rd dimension in microelectronics for functions beyond
interconnects, enabling 3D non-von Neumann computer architectures exploiting ferroelectrics for local memory, logic in memory, digital/analog computation, and neuromorphic functionality. This approach circumvents
the end of Moore’s law in 2D scaling, while simultaneously overcoming the “von Neumann bottleneck” in moving instructions and data between separate logic and memory circuits. Computing accounts for 5 – 15% of worldwide energy
consumption. In the U.S., data centers alone are projected to consume approximately 73 billion kWh in 2020. While recent efficiency gains in hardware have partially mitigated the rising energy consumption of computing, major gains are achievable in
a paradigm shift to 3D computing systems, especially those that closely couple memory and logic. The talk will cover the relevant materials, their deposition conditions, and what is known about the wake-up, fatigue, and retention processes.