The ICSCRM 2017 organizers were pleased to announce a new session, Sunday Program Reviews, that was held on Sunday, September 17, and highlighted selected collaborative programs advancing silicon carbide technology.
Sunday Program Reviews ran concurrently with the traditional technical tutorials and featured research and/or manufacturing programs of substantial size, as well as multiple technical focal areas (e.g. materials development as well as devices). It was anticipated that programs selected for a summary presentation in this session would incorporate performers from several entities, including academic, industry and government organizations, and feature programs that are either in a period of on-going performance or very recently completed at the time of the conference.
Schedule
Sunday, September 17 | 1:00 pm – 5:30 pm
Thurgood Marshall Ballroom, West Salon
1:00 pm – 1:45 pm
National Programs on SiC Power Devices in China- from Research to Applications
Fei Yang, State Grid Corporation of China
1:45 pm – 2:45 pm
SiC Power Electronics Technology for Energy Efficient Devices (SPEED) Introductory Overview
Peter Friedrichs, Infineon Technologies AG
2:45 pm – 3:30 pm
Manufacturing Job Creation through Accelerated Large-Scale Adoption of SiC Semiconductor Devices
Victor Veliadis, PowerAmerica, North Carolina State University
3:30 PM – 3:45 pm
Break
3:45 pm – 4:45 pm
Genealogy of National Projects on SiC Power Electronics and Related Current Research and Development Activities in Japan
Hajime Okumura, National Institute of Advanced Industrial Science and Technology (AIST)
4:45 pm – 5:30 pm
The New York Power Electronics Manufacturing Consortium—Enabling the Power Electronics Revolution
Brian C. Sapp, State University of New York Polytechnic Institute