Plenary Speakers

 

Presentation - Monday: 8:30 am – 9:15 am

Zlatko Sitar, North Carolina State University, United States
AlN—Dopant Incorporation and Activation by MOVPE

Zlatko Sitar is a Kobe Steel distinguished Professor of Materials Science and Engineering, Physics, and Electrical Engineering at NCSU. His research is concerned with bulk and thin film growth, characterization, property control, and device development in wide and extreme bandgap semiconductors. He has developed, patented, and commercialized a process for growth of AlN crystals and fabrication of wafers thereof. To complement the wafer technology, he has developed  kinetically-controlled epitaxial growth processes on single crystalline AlN and GaN wafers, which are the basis for high-efficiency, UVC LEDs, LDs, and APDs, and next generation of high-voltage, high-power devices. Based on his research, he founded HexaTech, Inc., focusing on AlN wafer technology, and Adroit Materials, Inc., focusing on high-performance devices on native GaN and AlN substrates slated for DoD, DoE, and NASA applications. His research has resulted in 80+ Ph.D. theses and 400+ journal publications.

 

 

Presentation - Monday: 9:15 am – 10:00 am

Kei May Lau, Hong Kong University of Science & Technology, Hong Kong
A New Paradigm for Integration of III-V Active Devices for SOI—Lateral Selective MOVPE

Kei May Lau is a Research Professor at the Hong Kong University of Science & Technology (HKUST).  She received her degrees from the University of Minnesota and Rice University and served as a faculty member at the University of Massachusetts/Amherst before joining HKUST in the summer of 2000. Lau is a Fellow of the IEEE, Optica (formerly OSA), and the Hong Kong Academy of Engineering Sciences. She was also a recipient of the IPRM award, IET J J Thomson medal for Electronics, Optica Nick Holonyak Jr. Award, IEEE Photonics Society Aron Kressel Award, US National Science Foundation (NSF) Faculty Awards for Women (FAW) Scientists and Engineers, and Hong Kong Croucher Senior Research Fellowship. She was an Editor of the IEEE Transactions on Electron Devices and Electron Device Letters, an Associate Editor for the Journal of Crystal Growth and Applied Physics Letters. Lau’s research work focuses on monolithic integration of semiconductor devices and systems on industry-standard silicon/SOI substrates by MOCVD. 

 

 

Presentation - Tuesday: 8:30 am – 9:15 am

James J. Coleman, North Carolina State University, United States
Strained-Layer MOCVD Growth—A Paradigm Shift in Epitaxy

James J. Coleman is the Intel Alumni Endowed Chair Emeritus in electrical engineering at the University of Illinois, Urbana. He received his degrees from Illinois and joined the faculty there after working at Bell Laboratories and Rockwell International. He and his students were the first to define experimentally the ranges of wavelength, threshold current density, and reliability of MOCVD-grown 980 nm strained-layer InGaAs lasers. Other research interests include MOCVD-grown diode lasers and other photonic devices, selective-area epitaxy, and the growth processes for quantum dot lasers. Jim is a member of the US National Academy of Engineering and a Fellow of the MRS, IEEE, OSA, SPIE, APS, AAAS, and the National Academy of Inventors. He was awarded the 2021 Nishizawa Medal for “for contributions to the development of strained-layer semiconductor lasers.” Other awards include the David Sarnoff Award, the John Tyndall Award, the SPIE Technical Achievement Award, and the Nick Holonyak, Jr. Award.

 

 

Presentation - Tuesday: 9:15 am – 10:00 am

Kevin Schulte,  National Renewable Energy Laboratory, United States
MOVPE of Devices for Thermophotovoltaics and Laser Power Conversion

Dr. Kevin Schulte is a scientist in the High Efficiency Crystalline Photovoltaics group at the National Renewable Energy Laboratory (NREL) in Golden, Colorado, USA. He received B.S. and M.S. degrees in Chemical Engineering from Northwestern University in 2008 and 2009, respectively, and a Ph.D. in Chemical Engineering from the University of Wisconsin-Madison in 2014 where he studied defect incorporation in III-V materials grown by hydride vapor phase epitaxy (HVPE). At NREL, he researches the epitaxial growth of III-V materials and devices via metalorganic vapor phase epitaxy (MOVPE) and HVPE, seeking to increase the efficiency and reduce the cost of these devices by understanding the mechanisms that control defect incorporation in epitaxial III-V materials. He was part of a team that received an R&D 100 award for the development of dynamic HVPE, and is on the executive committee of the American Association of Crystal Growth. 

 

 

Presentation - Thursday: 8:30 am – 9:15 am

Shubhra Pasayat, University of Wisconsin-Madison
Recent Developments in Long Wavelength III-N Emitters for Mini-Displays and Electronic Materials using MOVPE

Shubhra S Pasayat is an Assistant Professor at the University of Wisconsin-Madison. She received her Bachelors in Electronics and Electrical Communications Engineering from Indian Institute of Technology, Kharagpur, and her graduate degrees from University of California, Santa Barbara before joining as a tenure track faculty at Wisconsin. She demonstrated the first red emitting micro-LED across any material system with dimension below 10 micrometer with measurable efficiency, and also demonstrated effective mass manipulation of both electrons and holes in the III-Nitride material system. She has since been working on performance improvement of III-N optoelectronics both in the long wavelength and UV emission range, and has recently been awarded the NSF CAREER award to improve the efficiency of UVB LEDs. Additionally, she is involved in state-of-the art electronic material development for both RF and power electronics materials for national security and defense applications.

 

 

Presentation - Thursday:  9:15 am – 10:00 am

Francesco Monitalenti, Università degli Studi di Milano-Bicocca, Italy
Machine Learning Modeling of Epitaxy and Nanostructures Evolution

 Author of more than 150 publications on international journals, FM started using and developing computational methods for simulating diffusion processes and crystal growth already during his PhD in Physics (University of Genoa, 1996-1999), under the supervision of Riccardo Ferrando. He then moved to the Theoretical Division of the Los Alamos National Laboratory, where he worked for two years in the group of Art Voter, helping in developing accelerated molecular dynamics methods. In 2002 he joined the Materials Science Department of the University of Milano-Bicocca as a junior faculty researcher. There, he developed an interest for semiconductor films and heterostructures. Presently he still works in the same Department, but as full Professor in Theoretical Physics of Matter and Dean of the PhD program in Materials Science and Nanotechnology. In the last few years FM embraced the Machine-Learning revolution, epitaxy being the primary focus of application so far.

 

 

 

 

Invited Speakers

Andrew Allerman, Sandia National Laboratories, United States
XeF2—A new MOCVD Source for Removal of Surface Si Contamination and In Situ Etching of GaN for Epitaxial Regrowth
 
Erik Bakkers, Eindhoven University of Technology, Japan
Epitaxy of Hexagonal SiGe Heterostructures
 
Chirag Gupta, University of Wisconsin-Madison, United States
Vertical GaN and Ga2O3 Power Devices enabled by MOVCD and HVPE
 
Motoaki Iwaya, Meiji University, Japan
MOVPE Growth of Stacked RGB Monolithic GalnN-Based µLED Arrays Connected via Tunnel Junctions and Challenges for VR/AR Display Applications
 
Jeehwa Kim, Massachusetts Institute of Technology, United States
Epitaxy Innovation for Future 3D Electronic System
 
Sriram Krishnamoorthy, University of California, Santa Barbara, United States
β-Gallium Oxide Metal Organic Vapor Phase Epitaxy for Lateral and Vertical Power Devices
 
Maki Kushimoto, Nagoya University, Japan
Advancements in AIGaN-Based Laser Diodes on AIN Substrates
 
Bernardette Kunert, imec, Belgium 
Electrically Injected InGaAs/GaNs Nano-Ridge Laser Fully Processed in a 300 mm CMOS Pilot Line
 
Stefano Leone, Fraunhofer Institute for Applied Solid State Physics IAF, Germany
MOCVD of AIScN and AIYN for Electronic Applications
 
Yun-Li (Charles) Li, Playnitride Inc., Taiwan
Challenges of MOCVD in Mass Production of MicroLEDs
 
Hideto Miyake, Mie University, Japan
Epitaxial Growth of AIGaN on Face-to-Face Annealed AIN Template and Deep UV-C LED Fablication
 
Tim Wernicke, Technische Universität Berlin, Germany 
Metalorganic Vapor Phase Epitaxy of AlGaN Based UVC LEDs
 

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