1998 MRS Fall Meeting & Exhibit

* Invited paper

SESSION E1: SEMICONDUCTOR AND SMALL STRUCTURES 
Chairs: Robert E. Leuchtner and Douglas H. Lowndes 
Monday Morning, November 30, 1998 
Cape Cod/Hyannis (M)

8:30 AM *E1.1 
SUPERSONIC MOLECULAR BEAM STUDIES OF CHEMISORPTION AND FILM DEPOSITION AT HYPERTHERMAL ENERGIES. J. R. Engstrom, School of Chemical Engineering, Cornell University, Ithaca, NY. 

9:00 AM E1.2 
LOW-ENERGY NITROGEN ION IMPINGEMENT FOR DOPING INTO GaAs AND DILUTE GaAsN GROWTH. Takayuki Shima^a, Yunosuke Makita^a, Shinji Kimura^a, Hirokazu Sanpei^a,b and Yasuhiro Fukuzawa^a,c aElectrotechnical Laboratory, Tsukuba, JAPAN. ^bTokai University, Hiratsuka, JAPAN. ^cNippon Institute of Technology, Minamisaitama, JAPAN. 

9:15 AM E1.3 
P-TYPE DOPING OF ZNSE BY EXCIMER LASER DOPING METHOD. Toru Aoki, Hiroyoshi Yamamoto, Yoshikazu Aoki, Yoichiro Nakanishi, Yoshinori Hatanaka, Graduate School of Electronic Science and Technology, Shizuoka Univ, JAPAN. 

9:30 AM E1.4 
STOICHIOMETRY ISSUES IN PULSED LASER DEPOSITION OF ALLOYS GROWN FROM MULTICOMPONENT TARGETS. Craig B. Arnold, James W. McCamy, Michael J. Aziz, Department of Physics and Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA. 

9:45 AM E1.5 
DIRECT LOW TEMPERATURE DEPOSITION OF POLYCRYSTALLINE SILICON THIN FILMS BY PLASMA IMMERSION ION IMPLANTATION OF SILICON. Jung H. Shin and Hwang Huh, Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Taejon, KOREA. 

10:00 AM BREAK 

10:30 AM E1.6 
SEMICONDUCTING BETA-FESI2 FILM GROWTH BY LASER ABLATION USING POLY BETA-FESI2 CRYSTALS. H. Kakemoto, Y.Makita, Electrotechnical Laboratory, Tsukuba, Ibaraki, JAPAN; S. Sakuragi, Union Material Inc., Ibaraki, JAPAN; T.Tsukamoto, Science University of Tokyo, Tokyo, JAPAN. 

10:45 AM E1.7 
FORMATION OF DENSE ARRAYS OF SILICON MICROCOLUMNS BY PULSED-LASER IRRADIATION. J.D. Fowlkes, W.-S. Kim, A.J. Pedraza, Dept. of Materials Science and Engineering, The University of Tennessee, Knoxville, TN; D. H. Lowndes, Dept. of Materials Science and Engineering, The University of Tennessee, Knoxville, TN and Solid State Division, Oak Ridge National Laboratory, TN. 

11:00 AM E1.8 
NOVEL FILM DEPOSITION AND SURFACE TEXTURING FOR ELECTRON (COLD) FIELD EMISSION USING HYPERTHERMAL PULSED LASER AND ION BEAM PROCESSING. Vladimir I. Merkulov, Douglas H. Lowndes, D.B. Geohegan, A.A. Puretzky, L.R. Baylor, G.E. Jellison, Jr., T.E. Haynes, C.M. Rouleau, T.G. Thundat, C.E. Thomas, Oak Ridge National Laboratory, Oak Ridge, TN; J.D. Fowlkes, A.J. Pedraza, S. Kang, U. of Tennessee, Knoxville, TN. 

11:15 AM E1.9 
INFLUENCE OF PROCESSING PARAMETERS ON CRYSTALLINITIES OF DEPOSITED SPECIES IN INERT GAS AMBIENT PULSED LASER ABLATION. Nobuyasu Suzuki, Toshiharu Makino, Yuka Yamada and Takehito Yoshida, Matsushita Research Inst. Tokyo, Inc., Kawasaki, JAPAN. 

11:30 AM E1.10 
NANOPARTICLE GROWTH MECHANISMS DURING PULSED LASER ABLATION INTO INERT ATMOSPHERES. James Fitz-Gerald,Rajiv Singh, Michael Ollinger. 

11:45 AM E1.11 
PRODUCTION OF SILICON OXIDE (Si_nO_x) PARTICLES BY LASER ABLATION OF POROUS SILICON. Ikuya Kameyama, Hidehiko Nonaka and Shingo Ichimura, Electrotechnical Laboratory, Tsukuba-shi, Ibaraki, JAPAN. 

SESSION E2: SURFACE MORPHOLOGY AND ROUGHNESS 
Chairs: Michael J. Aziz and James R. Engstrom 
Monday Afternoon, November 30, 1998 
Cape Cod/Hyannis (M)

1:30 PM *E2.1 
THE DEPENDENCE OF THIN FILM MORPHOLOGY ON DEPOSITION METHOD. Thomas Michely, I. Physikalisches Institut, RWTH Aachen, Aachen, GERMANY. 

2:00 PM E2.2 
COMPARISON OF INITIAL THIN FILM FORMATION BY ION AND MOLECULAR BEAMS. H.-A. Durand, K. Sekine, K. Etoh, K. Ito, I. Kataoka, Japan Aviation Electronics Industry Ltd., Central Research Laboratory, Tokyo, JAPAN. 

2:15 PM E2.3 
A LOW-ENERGY ION IMPLANTER FOR SURFACE AND MATERIALS SCIENCE. Sönke Habenicht, Wolfgang Bolse, Klaus-Peter Lieb, 2. Physikalisches Institut und Sonderforschungsbereich 345, Georg-August Universität Göttingen, Göttingen, GERMANY; Ulrich Geyer, 1. Physikalisches Institut und Sonderforschungsbereich 345, Georg-August Universität Göttingen, Göttingen, GERMANY. 

2:30 PM E2.4 
COPPER GROWTH ON MOLYBDENUM SUBSTRATES STUDIED WITH THERMAL HELIUM DESORPTION SPECTROMETRY. Jacqueline C. van der Linden, Léon J. Seijbel, and Barend J. Thijsse, Laboratory of Materials Science, Delft University of Technology, Delft, NETHERLANDS. 

2:45 PM BREAK 

3:15 PM *E2.5 
A COMPARISON OF EPITAXIAL SILICON FILM SURFACE EVOLUTION IN SPUTTER DEPOSITION, PULSED LASER DEPOSITION AND MOLECULAR BEAM EPITAXY. Harry A. Atwater and Maggie E. Taylor, California Institute of Technology, Pasadena CA. 

3:45 PM E2.6 
ENERGY DEPENDENT MONTE CARLO SIMULATION OF PHYSICAL VAPOR DEPOSITION OF NICKEL. Yougen Yang, Xiaowang Zhou and Haydn N. G. Wadley, Univ of Virginia, Dept of Materials Science and Engineering, Charlottesville, VA. 

4:00 PM E2.7 
REAL-TIME X-RAY SCATTERING FROM SURFACE RIPPLES ON SiO₂ FORMED DURING ION SPUTTERING. C.C. Umbach, J.M. Blakely, B.H. Cooper, Cornell University, Ithaca, NY; R.L. Headrick, Cornell High Energy Synchrotron Source, Ithaca, NY; E.H. Chason, Sandia National Laboratories, Albuquerque, NM. 

4:15 PM E2.8 
SPUTTER RIPPLING KINETICS OF Si(001). Jonah D. Erlebacher, Harvard University, Division of Engineering and Applied Science, Cambridge, MA; Eric Chason, Sandia National Laboratories, Albuquerque, NM; Michael J. Aziz, Harvard University, Division of Engineering and Applied Science, Cambridge, MA. 

4:30 PM E2.9 
ION BEAM EROSION OF Au(111): SCANNING TUNNELING MICROSCOPY(STM) AND X-RAY STUDIES. A. Judy, E.N. Butler, M.V. Ramana Murty, B. H. Cooper, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY; A.R. Woll, J.D. Brock, Dept of Applied and Engineering Physics, Cornell University, Ithaca, NY; R.L. Headrick, Cornell High Energy Synchrotron Source, Wilson Laboratory, Ithaca, NY. 

4:45 PM E2.10 
USING THE DYNAMIC SCALING FUNCTION OF ROUGHNESS TO CLASSIFY THE GROWTH BEHAVIOR OF METALLIC THIN FILMS DEPOSITED BY ION AND MOLECULAR BEAMS. H.-A. Durand, K. Sekine, K. Etoh, K. Ito, I. Kataoka, Japan Aviation Electronics Industry Ltd., Central Research Laboratory, Tokyo, JAPAN. 

SESSION E3: SUPERHARD NITRIDES AND CARBIDES 
Chairs: Kevin F. McCarty and Anthony J. Pedraza 
Tuesday Morning, December 1, 1998 
Cape Cod/Hyannis (M)

8:30 AM *E3.1 
RESIDUAL STRESS AND HARDNESS IN AMORPHOUS CARBON FILMS GROWN BY PULSED LASER ABLATION. T.A. Friedmann, J.P. Sullivan, N.A. Missert, D.R. Tallant, J.A. Knapp, D.M. Follstaedt, and A.J. Magerkurth, Sandia National Laboratories, Albuquerque, NM; D.L. Medlin, Sandia National Laboratories, Livermore, CA. 

9:00 AM E3.2 
IMPROVEMENT OF THE SP³/SP² RATIO BY SELF-SPUTTERING DEPOSITION, Zheng Jun Zhang, K. Narumi, H. Naramoto, Advanced Science Research Center; Z.P. Wu and S. Yamamoto, Functional Materials Research Lab. 2, Japan Atomic Energy Research Institute, Takasaki, Gunma, JAPAN. 

9:15 AM E3.3 
APPLICATION OF ATOMISTIC SIMULATIONS TO THE STUDY OF HYDROCARBON CLUSTER DYNAMICS: THIN FILM GROWTH. Lifeng Qi, W. Leigh Young, Susan B. Sinnott, University of Kentucky, Dept of Chemical and Materials Engineering, Lexington, KY. 

9:30 AM E3.4 
NATURALLY-FORMING LAYERED INTERFACE STRUCTURES IN AMORPHOUS-CARBON FILMS GROWN USING HYPERTHERMAL BEAMS. M. P. Siegal, J. C. Barbour, P. Newcomer Provencio, D. R. Tallant, and T. A. Friedmann, Sandia National Laboratories, Albuquerque, NM; and L. J. Martinez-Miranda, University of Maryland, College Park, MD; and B. Y. Kleinsorge and W. I. Milne, Cambridge University, Cambridge, UNITED KINGDOM. 

9:45 AM E3.5 
SYNTHESIS AND CHARACTERIZATION OF DIAMONDLIKE CARBON FILMS DEPOSITED ON Si USING PLASMA IMMERSION ION DEPOSITION. Doug H. Lee, Kevin C. Walter, Michael A. Nastasi, Los Alamos National Laboratory, Los Alamos, NM; James A. Knapp, Sandia National Laboratory, Albuquerque, NM; Thomas Witke, Fraunhofer USA, Ann Arbor, MI. 

10:00 AM BREAK 

10:30 AM *E3.6 
FILM GROWTH USING MASS-SEPARATED ION BEAMS. Hans C. Hofsaess, Fakultaet fuer Physik, Universitaet Konstanz, GERMANY. 

11:00 AM E3.7 
BN BASED MULTILAYERS BY ION BEAM ASSISTED DEPOSITION. A. Kolitsch, X. Wang, W. Fukarek, S. Oswald, A. Muecklich, W. Moeller, Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf (FZR), GERMANY. 

11:15 AM E3.8 
PREPARATION AND CHARACTERIZATION OF GRADIENT (TI,AL)N FILMS BY ION BEAM ASSISTED DEPOSITION. Li Shu, Xiao-Ming He, Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM; Li-Duo Wang, and Heng-De Li, Department of Materials Science and Engineering, Tsinghua University, Beijing, P.R. CHINA. 

11:30 AM E3.9 
EXPERIMENTAL INVESTIGATION OF c-BN PERCENTAGE IN THE FILMS PREPARED BY DUAL ION BEAM DEPOSITION. Kuang Yuanzhu, Wang Yu, Huang Xiaogang and You Dawei, Space Science and Application Research Center, Academia Sinica, P.R. CHINA; Wang Xingmin and Lin Wenlian, Institute of Low Energy Nuclear Physics, Beijing Normal University, P.R. CHINA. 

11:45 AM E3.10 
LIMITS OF SNEDDON'S SOLUTION FOR NANOINDENTATION MEASUREMENTS OF THIN FILMS. J. A. Knapp, D. M. Follstaedt and T. A. Friedmann, Sandia National Laboratories, Albuquerque, NM. 

SESSION E4: NITRIDES 
Chairs: J. W. McCamy and Christopher Roland 
Tuesday Afternoon, December 1, 1998 
Cape Cod/Hyannis (M)

1:30 PM *E4.1 
LOW-ENERGY ION AND HYPERTHERMAL NEUTRAL BEAMS FOR SEMICONDUCTOR AND METAL FILM GROWTH: EFFECTS ON NUCLEATION, MICROSTRUCTURE EVOLUTION, EPITAXIAL THICKNESS, ROUGHENING, AND STRAIN RELAXATION. Joe Greene, N.-E. Lee, D. Bergstrom, I. Petrov, B.W. Karr, and D.C. Cahill, Materials Science Department, Univ. of Illinois, Urbana, IL. 

2:00 PM E4.2 
MICROSTRUCTURE, PROPERTIES AND RESIDUAL STRESS IN AlN FILMS PREPARED BY ION BEAM ASSISTED DEPOSITION. Yoshihisa Watanabe, Shingo Uchiyama and Yoshikazu Nakamura, National Defense Academy, Dept. of Materials Science and Engineering, Kanagawa, JAPAN; Chunliang Li, Tohru Sekino and Kouichi Niihara, Osaka University, Institute of Scientific and Industrial Research, Osaka, JAPAN. 

2:15 PM E4.3 
PLASMA-ASSISTED MBE SYNTHESIS OF III-N SEMICONDUCTORS: A MODEL SYSTEM FOR DETERMINING THERMODYNAMIC AND KINETIC BARRIERS OF META-STABLE GROWTH. Z.Y. Fan and N. Newman, Electrical and Computer Engineering Department, Northwestern University, Evanston, IL. 

2:30 PM E4.4 
HOMOEPITAXIAL GROWTH OF GaN USING SEEDED SUPERSONIC MOLECULAR BEAMS. A. Michel, H.H. Lamb, North Carolina State University, Dept of Chemical Engineering, Raleigh, NC; A. McGinnis, D. Thomson, O. Nam, R.F. Davis, North Carolina State University, Dept of Materials Science and Engineering, Raleigh, NC. 

2:45 PM E4.5 
EPITAXIAL GROWTH OF GaN AND AlN USING SUPERSONIC SEEDED FREE-JETS OF HYPERTHERMAL NH₃. V.M. Torres, D.J. Smith, I.S.T Tsong, and R.B. Doak, Arizona State University, Tempe, AZ. 

3:00 PM BREAK 

3:30 PM E4.6 
AMORPHOUS SILICON NITRIDE FILMS GROWN BY MOLECULAR JET CHEMICAL VAPOR DEPOSITION. G.E. Jellison, Jr., G. Eres, F. Hui, and S.P. Withrow, Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN. 

3:45 PM E4.7 
GROWTH OF AlN(100) THIN FILMS USING PULSED UNSKIMMED SUPERSONIC MOLECULAR BEAMS. Mark E. Little, Vince W. Ballarotto and Martin E. Kordesch, Condensed Matter and Surface Sciences, Dept. of Physics, Ohio University, Athens, OH. 

4:00 PM E4.8 
INFLUENCE OF PLASMA PARAMETERS ON THE GROWTH AND PROPERTIES OF MAGNETRON SPUTTERED CN_x THIN FILMS. Niklas Hellgren, Karol Macak, Esteban Broitman, Mats P. Johansson, Per Sandstrom, Lars Hultman, Jan-Eric Sundgren, Department of Physics, Linköping University, Linköping, SWEDEN. 

4:15 PM E4.9 
ION BEAM DEPOSITION OF AMORPHOUS CARBON NITRIDE FILMS. Richard L.C. Wu, William C. Lanter and John D. Wrbanek, K Systems Corporation, Beavercreek, OH; Charles DeJoseph, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH. 

4:30 PM E4.10 
STUDY OF PHASE COMPOSITION IN CARBON NITRIDE LAYERS GROWN BY REACTIVE LASER ABLATION. E.C. Samano, R. Machorro, G. Soto, L. Cota, Centro de Ciencias de la Materia Condensada, UNAM, Ensenada, B.C., MEXICO. 

4:45 PM E4.11 
DEPOSITION OF SILICON CARBON NITRIDE FILMS BY ELECTRON CYCLOTRON RESONANCE PLASMA CHEMICAL VAPOR DEPOSITION. Jih-Jen Wu, Kuei-Hsien Chen, Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, TAIWAN; Li-Chyong Chen, Center for Condensed Matter Sciences, National Taiwan University, Taipei, TAIWAN; Tien-Rong Lu, Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan; Jr-Ren Yang, Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei, TAIWAN. 

SESSION E5: POSTER SESSION 
Chairs: Douglas H. Lowndes and Christopher Roland 
Tuesday Evening, December 1, 1998 
8:00 P.M. 
America Ballroom (W)

E5.1 
ENERGY DEPENDENT TRAPPING PROBABILITIES OF HYPERTHERMAL O⁺ ON Cu(001). Andone Lavery, Chad Sosolik, Barbara Cooper, Cornell Univ, Dept of Physics, Ithaca, NY. 

E5.2 
SUBSTRATE STRUCTURE EFFECTS ON h-BN INTERFACE LAYER FORMATION IN c-BN THIN FILM GROWTH. Hans Hofsaess, Horst Feldermann Fakultät für Physik, Universität Konstanz, Konstanz, GERMANY; Silke Christiansen Institut für Werkstoffwissenschaften-Mikrocharakterisierung, Universität Erlangen-Nürnberg, Erlangen, GERMANY. 

E5.3 
SIMILARITY OF ENERGETIC DEPOSITIONS OF CUBIC BORON NITRIDE AND TITANIUM NITRIDE THIN FILMS. X. Wang^1,2, A. Kolitsch², J. P. Zhao¹, W. Moeller², ¹Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, CHINA; ²Institute of Ion Beam Physics and Materials Research, Research Center Rossendorf, Dresden, GERMANY. 

E5.4 
Abstract Withdrawn. 

E5.5 
SYNTHESIS OF PULSED LASER DEPOSITED GALLIUM NITRIDE FILMS ON SAPPHIRE SUBSTRATES. R. Bahl,Ashok Kumar and M. Shamsuzzoha* Department of Electrical Engineering, University of South Alabama, Mobile, AL. *Depatment of Metallurgical and Materials Engineering, The University of Alabama, Tuscaloosa, AL. 

E5.6 
THE EFFECT OF ION ENERGY ON THE EPITAXIAL GROWTH OF ALN, GAN GROWN BY THE HELICON WAVE PLASMA MOCVD. Ki-Sung Kim, Seon-Hyo Kim, Pohang University of Science and Technology, Department of Material Science and Engineering, Pohang, Kyungbuk, REPUBLIC OF KOREA. 

E5.7 
A STUDY ON NITRIDATION OF SI-GaAs SURFACE BY MASS-ANALYZED HYPERTHERMAL(100-500eV) N⁺ ION BEAMS. Zhen-yu Yao^(a), Jian-hui Zhang^(a), Zhi-kai Liu^(a),Fu-guang Qin^(a), Zheng-long Wu^(b), Jun-ying Xu^(c), Zhan-guo Wang^(a), Lan-ying Lin^(a) (a)Laboratory of Semiconductor Material Science, Institute of Semiconductors, Academia Sinica, Beijing,P.R. CHINA; ^(b)Analytic and Testing Centre,Beijing Normal University, Beijing, P.R. China ^(c)National Engineering Research Centre for Optoelectronics Devices, Institute of Semiconductors, Academia Sinica, Beijing, P.R. CHINA. 

E5.8 
FABRICATION OF HIGHER CONDUCTIVE TRANSPARENT FILMS BY THE LASER PRODUCED PLASMAS. Kensuke Murai, Osaka National Research Institute, Osaka, JAPAN. Akitaka Kashihara, Yasuo Takigawa, Osaka Electro-Communication University, Osaka, JAPAN; Masanori Umehara, Yutaka Kurioka, KINKI University, Osaka, JAPAN. 

E5.9 
PULSED LASER ABLATION OF MgIn₂O₄: FILM GROWTH ON (001) MgO AND PHASE COMPETITION. Christopher M. Rouleau, S. Kang¹, G.E. Jellison, Jr. and D.B. Poker; Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN; ¹ University of Tennessee, Dept. of Physics and Astronomy, Knoxville, TN. 

E5.10 
OBSERVATIONS OF LASER ABLATED SPECIES FROM MGIN₂O₄. Yasuo Takigawa, Tetsuro Hori, Osaka Electro-Communication Univ, Dept of Electronics Engineering, Osaka, JAPAN; Kou Kurosawa, Univ of Miyazaki , Dept of Electrical and Electronics Engineering, Miyazaki, JAPAN. 

E5.11 
ELECTRICAL CHARACTERISTICS OF HIGH-QUALITY SUB-25 OXIDES GROWN BY ULTRAVIOLET OZONE EXPOSURE AT LOW TEMPERATURE. G.D. Wilk, Central Research Labs, Texas Instruments, Dallas, TX; B. Brar, Applied Research Labs, Raytheon TI Systems, Dallas, TX. 

E5.12 
EXAMINATION OF THE INTERFACE OF HYPERTHERMALLY GROWN NITRIDES ON POLYMERS. Peter Abramowitz, Mike Kiene, Paul Ho, Dept of Physics, University of Texas at Austin, Austin, TX. 

E5.13 
IN SITU OPTICAL DIAGNOUSTIC OF METAL THIN FILMS DEPOSITED BY THE DYNAMIC MIXING METHOD. Akitaka Kashihara, Yasuo Takigawa, Osaka Electro-Communication University, JAPAN; Kensuke Murai, Yoshiyuki Sato, Masato Kiuchi, Osaka National Reserch Institute, AIST, Dept. of Material Physics, JAPAN. 

E5.14 
EXCIMER LASER MOLECULAR BEAM DEPOSITION OF COBALT ANTIMONIDE SKUTTERUDITE FOR THERMOELECTRIC APPLICATION. H.-A. Durand, K. Ito, I. Kataoka, Japan Aviation Electronics Industry Ltd., Central Research Laboratory, Tokyo, JAPAN. 

E5.15 
SILICON CARBIDE FILMS GROWN BY SIMULTANEOUS IRRADIATION OF HYPERTHERMAL ²⁸Si^- AND ¹²C⁺ IONS. N. Tsubouchi, A. Chayahara, A. Kinomura, C. Heck, Y. Horino, Dept of Material Physics, Osaka National Research Institute, JAPAN. 

E5.16 
SYNTHESIS OF NANOSTRUCTURED CARBON FILMS BY SUPERSONIC CLUSTER BEAM DEPOSITION. Paolo Milani, Emanuele Barborini, Paolo Piseri, INFM-Dipartimento di Fisica, Universita' di Milano, Milano, ITALY. 

E5.17 
AMORPHOUS DIAMOND-LIKE CARBON THIN FILMS SYNTHESIZED BY PULSED LASER ABLATION METHOD. Ken Yukimura, Nobuyuki Matsuyama, Naoki Tanaka, Doshisha Univ. Faculty of Engineering, Dept of Electrical Engineering, Kyoto, JAPAN; Masaki Moronuki, Riken Corporation, Research and Development Division, Saitama JAPAN; Toshiro Maruyama, Kyoto Univ, Faculty of Engineering, Department of Chemical Engineering, Kyoto, JAPAN. 

E5.18 
SYNTHESIS OF CARBON NITRIDE FILMS BY LASER PROCESSED METHODS. Ashok Kumar and R. Alexandrescu^*, Advanced Thin Film Laboratory, Dept. of Electrical Engineering, University of South Alabama, Mobile, AL; ^*National Institute for Lasers, Plasma and Radiation Physics, Bucharest, ROMANIA. 

E5.19 
PULSED ARC DEPOSITION OF NON-METALLIC MATERIAL AND ION BEAM EXTRACTION BY SHUNTING ARC DISCHARGE. Ken Yukimura, Kenji Yoshioka, Doshisha Univ, Faculty of Engineering, Dept of Electrical Engineering, Kyoto, JAPAN; Sadao Masamune, Kyoto Institute of Technology, Department of Electronics and Information Science, Kyoto, JAPAN. 

SESSION E6: IN-PLANE TEXTURE DEVELOPMENT AND OXIDES 
Chairs: Thomas A. Friedmann and Yunosuke Makita 
Wednesday Morning, December 2, 1998 
Cape Cod/Hyannis (M)

8:30 AM *E6.1 
ION-BEAM ASSISTED DEPOSITION OF OXIDES AND RESTRICTED TEXTURE DEVELOPMENT. Michael J. Cima, Dept of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA. 

9:00 AM E6.2 
SIMULATION STUDY OF ION BEAM CONTROL OF THIN FILM TEXTURE. Liang Dong, David J. Srolovitz, Dept. of Materials Science and Engineering, University of Michigan, Ann Arbor, MI. 

9:15 AM E6.3 
DEPOSITION OF BIAXIALLY-TEXTURED YTTRIA-STABILIZED ZIRCONIA FILMS BY DUAL MAGNETRON OBLIQUE SPUTTERING. D.Y. Kaufman, P.M. DeLuca, and S.A. Barnett, Dept. of Materials Science and Engineering, Northwestern University, Evanston, IL. 

9:30 AM E6.4 
PULSED LASER DEPOSITION OF MIXED METAL CARBIDE COATINGS: CONTROL OF IN-PLANE FILM TEXTURE WITH PARTICLE ENERGY. R.E. Leuchtner and W.F. Brock, University of New Hampshire Department of Physics, Demeritt Hall, Durham, NH. 

9:45 AM E6.5 
PLUME-INDUCED STRESS AND TEXTURE IN PULSED-LASER DEPOSITED CeO₂ FILMS. David P. Norton, Chan Park, David B. Geohegan, Alex Puretzky and John D. Budai, Oak Ridge National Laboratory, Oak Ridge, TN. 

10:00 AM BREAK 

10:30 AM E6.6 
IN SITU, TIME-RESOLVED X-RAY DIFFRACTION INVESTIGATION OF PULSED LASER GROWTH OF ZnO ON (0001) SAPPHIRE. B.C. Larson, J.Z. Tischler, D.H. Lowndes, M. Yoon, J. D. Budai, G. Eres, G.E. Jellison, Jr. and T.G. Thundat, Oak Ridge National Laboratory; P. Zschack, P. Jemian, and H. Hong, UNI-CAT and University of IL-MRL; T.C. Chiang, Univ. of IL. 

10:45 AM E6.7 
GROWTH OF EPITAXIAL AND HIGHLY TEXTURED ZNO FILMS BY PULSED-LASER ABLATION. Shen Zhu,Y. Ryu, H. W. White, H. R. Chandrasekhar, Dept. of Physics and Astronomy, University of Missouri, Columbia, MO; J. M. Wrobel and H. M. Jeong, Dept. of Physics, University of Missouri, Kansas City, MO; J. Budai, Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN. 

11:00 AM E6.8 
INERT BACKGROUND GAS EFFECTS IN PULSED LASER DEPOSITION OF INDIUM OXIDE THIN FILMS. Yuka Yamada, Nobuyasu Suzuki, Toshiharu Makino, Takehito Yoshida, Matsushita Research Inst. Tokyo, Inc., Kawasaki, JAPAN. 

11:15 AM E6.9 
DESORPTION OF MOLECULAR IONS FROM MgO SINGLE CRYSTAL SURFACES BY EXCIMER LASER IRRADIATION. Seisuke Kano, Mechanical Engineering Laboratory, AIST, MITI, Namiki, Tsukuba, Ibaraki , JAPAN; S. C. Langford and J. T. Dickinson, Department of Physics, Washington State University, Pullman, WA. 

11:30 AM E6.10 
ION BEAM ASSISTED DEPOSITION OF TiN THIN FILM ON SILICON (001)^*. J.-H. Huang⁺, National Tsing Hua University, Department of Engineering and System Science, Hsinchu, TAIWAN; C.-H. Lin and Haydn Chen, University of Illinois at Urbana-Champaign, Department of Materials Sciences and Engineering, Urbana, IL. ^*Research supported by U.S. Department of Energy; ⁺On leave at University of Illinois at Urbana-Champaign.