1996 MRS Fall Meeting & Exhibit

Chairs

Steven Brierley -- Raytheon Corp
J. Gibson -- Univ of Illinois-Urbana
O. Glembocki -- Naval Research Laboratory
S. Prokes -- Naval Research Laboratory
J. Woodall -- Purdue Univ

* Invited paper

SESSION M1: CHEMICAL MODIFICATION OF SURFACES: PASSIVATION
Chair: O. J. Glembocki
Monday Morning, December 2, 1996
Salon C/D (M)

8:30 AM *M1.1
CHEMICALLY STABLE SEMICONDUCTOR SURFACE LAYERS USING LOW-TEMPERATURE GROWN GaAs, David B. Janes, Purdue Univ, School of Electrical & Computer Engr, West Lafayette, IN.

9:00 AM M1.2
SURFACE RECONSTRUCTION AND MORPHOLOGY OF HYDROGEN SULFIDE TREATED GaAs (001) SUBSTRATE, Jun Suda, Kyoto University, Dept of Elect Science & Engr, Kyoto, JAPAN; Shigeo Fujita, Shizuo Fujita, Yoichi Kawakami, Kyoto University, Dept of Electronic Science & Engr, Kyoto, JAPAN.

9:15 AM M1.3
IMPROVEMENT OF InGaP/GaAs HETEROINTERFACE QUALITY BY CONTROLLING FLOW CONDITION, Yoshino K. Fukai, Fumiaki Hyuga, Takumi Nittono, Kazuo Watanabe, Hirohiko Sugahara, NTT LSI Laboratories, Kanagawa, JAPAN.

9:30 AM M1.4
ELECTRO-CHEMICAL CHARACTERISATION OF A NOVEL SULPHUR BASED ANODIC III-V PASSIVATION TREATMENT, Martin Murtagh, NMRC, Cork, IRELAND; Edna McGlynn, NMRC, Lee Matings, Cork, IRELAND; Gabriel M. Crean, NMRC, Cork, IRELAND; R. Elbanasawy, J. T. McInerney, UCC, Dept of Physics, Cork, IRELAND; G. Hughes, Dublin City Univ, Dublin, IRELAND.

9:45 AM M1.5
PROCESSING OF InP AND GaAs SURFACES BY HYDROGEN AND OXYGEN PLASMAS: IN SITU REAL TIME ELLIPSOMETRIC MONITORING, Maria Losurdo, Giovanni Bruno, Pio Capezzuto, CNR, Dept of Chemistry, Bari, ITALY.

10:00 AM BREAK

SESSION M2: CHEMICAL MODIFICATION OF SURFACES: ETCHING
Chair: David B. Janes
Monday Morning, December 2, 1996
Salon C/D (M)

10:30 AM M2.1
CHARACTERIZATION OF GaAs SURFACES SUBJECTED TO A /Ar HIGH DENSITY PLASMA ETCHING PROCESS, Charles R. Eddy, Darrin Leonhardt, Vasghen A. Shamamian, Ronald T. Holm, Orest J. Glembocki, James E. Butler, Naval Research Laboratory, Washington, DC; Brian D. Thoms, Georgia State Univ, Dept of Physics & Astronomy, Atlanta, GA; Stella W. Pang, Univ of Michigan, Dept of EE&CS, Ann Arbor, MI.

10:45 AM M2.2
HIGH DENSITY PLASMA ETCHING OF Si(100): INVESTIGATION OF SURFACE CHEMISTRY AND DAMAGE, Nacer Layadi, V. M. Donnelly, J.T. C. Lee, F. P. Klemens, Bell Labs, Lucent Technologies, Murray Hill, NJ.

11:00 AM M2.3
THEORY OF REACTIVE ADSORPTION ON Si(100), Douglas J. Doren, Anita A. Robinson Brown, Robert O. Konecny, Univ of Delaware, Dept of Chemistry, Newark, DE.

11:15 AM M2.4
ETCHING OF SILICON: A MECHANISTIC IN-SITU STM STUDY, Peter M Hoffmann, Peter C. Searson, Inge E. Vermeir, Arun Natarajan, Gerko Oskam, Johns Hopkins Univ, Dept of MS&E, Baltimore, MD.

11:30 AM M2.5
NONRADIATIVE RECOMBINATION ON Si SURFACES DURING ANODIC OXIDATION IN FLUORIDE SOLUTIONS, J. Rappich, Hahn-Meitner-Inst, Ateilung Photovoltaik, Berlin, GERMANY; Thomas Dittrich, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Victor Yu. Timoshenko, Moscow State Univ, Faculty of Physics, Moscow, RUSSIA.

11:45 AM M2.6
ADVANCED LITHOGRAPHY FOR NANOFABRICATION, Frank Hui, Gyula Eres, Oak Ridge National Laboratory, Oak Ridge, TN.

SESSION M3: CONTROL OF SURFACES/INTERFACES
Chairs: Susumu Fukatsu and Andrew Zangwill
Monday Afternoon, December 2, 1996
Salon C/D (M)

1:30 PM *M3.1
ATOMIC LAYER MANIPULATION AND RELATED SURFACE PROCESSES, Yoshinobu Aoyagi, RIKEN, Semiconductor Lab, Saitama, JAPAN.

2:00 PM M3.2
UHV-STM OBSERVATION OF MULTI-ATOMIC STEP STRUCTURE ON GaAs AND AlAs VICINAL SURFACE GROWN BY MOVPE, Jun-ya Ishizaki, Yasuhiko Ishikawa, Takashi Fukui, Hokkaido Univ, RCIQE, Hokkaido, JAPAN.

2:15 PM M3.3
GROWTH AND CHARACTERIZATION OF ULTRATHIN FILMS OF THE LAYERED SEMICONDUCTOR GaSe ON SULFUR-PASSIVATED GaP(111), Matthew W. Neely, Neal R. Armstrong, Andrew S. Back, Paul Lee, Kenneth W. Nebesny, Univ of Arizona, Dept of Chemistry, Tucson, AZ.

2:30 PM M3.4
IN SITU OPTICAL OBSERVATION AND CONTROL OF INITIAL STAGES OF GaAs GROWTH ON CaF SURFACE MODIFIED BY ELECTRON BEAM IRRADIATION, Koji Kawasakii, Kazuo Tsutsui, Tokyo Inst of Technology, Interdisciplinary Graduate School of Sci & Engr, Yokohama, JAPAN.

2:45 PM M3.5
FORMATION OF ZnSe-GaAs HETEROVALENT HETEROSTRUCTURES BY MOVPE, Mitsuru Funato, Shizuo Fujita, Shigeo Fujita, Satoshi Aoki, Kyoto University, Dept of Electronic Science & Engr, Kyoto, JAPAN.

3:00 PM BREAK

3:30 PM M3.6
INFLUENCE OF C INCORPORATION ON THE STRUCTURE AND MORPHOLOGY OF Si ON Si(001) DEPOSITED USING UHV-CVD, S. Nayak, D. E. Savage, E. Rudkevich, M. G. Lagally, Univ of Wisconsin-Madison, Materials Science Program, Madison, WI; Thomas F. Kuech, Univ of Wisconsin-Madison, Dept of Chemical Engr, Madison, WI.

3:45 PM M3.7
ATOMIC HYDROGEN ASSISTED GROWTH OF Si-Ge HETEROSTRUCTURES ON (001) Si, J.-M. Baribeau, National Research Council, Inst. Microstructural Sciences, Ottawa, CANADA; William N. Unertl, Univ of Maine, Surface Science & Tech Lab, Orono, ME; H.J. Labbe, S. Rolfe, National Research Council, Inst Microstructural Sciences, Ottawa, CANADA.

4:00 PM M3.8
SURFACE REACTIONS DURING THE DEPOSITION OF Ge FROM CHEMICAL SOURCES ON Ge(100)-(2 1), C. Michael Greenlief, Jihong Chen, Univ of Missouri-Columbia, Dept of Chemistry, Columbia, MO.

4:15 PM M3.9
FORMATION MECHANISMS OF ISLANDS AND DISLOCATIONS IN LARGE LATTICE-MISMATCH EPITAXY, Yong Chen, X. W. Lin, Zuzanna Liliental-Weber, J. Washburn, Lawrence Berkeley National Laboratory, Berkeley, CA.

4:30 PM M3.10
SiC ATOMIC LAYER EPITAXY ON Si SURFACES FROM H C[Si(CH ) ] AND Si (CH ) , Louis J. Terminello, Lawrence Livermore National Laboratory, Dept of Chemistry & Matls Science, Livermore, CA; Douglas G. J. Sutherland, Lawrence Berkeley National Laboratory, Berkeley, CA.

4:45 PM M3.11
SURFACE MORPHOLOGY OF NANOSCALE AND EPITAXIAL ISLANDS ON Si(100), Woochul Yang, North Carolina State Univ, Dept of Physics, Raleigh, NC; Frisco J. Jedema, Robert J. Nemanich, North Carolina State Univ, Dept of Physics, Raleigh, NC.

SESSION M4: NANOSTRUCTURE FORMATION/SELF-ASSEMBLY
Chairs: Yoshinobu Aoyagi and S. M. Prokes
Tuesday Morning, December 3, 1996
Salon C/D (M)

9:00 AM *M4.1
KINETIC PATHWAYS TO QUANTUM DOTS DURING SEMICONDUCTOR HETEROEPITAXY, Andrew Zangwill, Georgia Inst of Technology, School of Physics, Atlanta, GA; Dimitri Vvedensky, Harvey Dobbs, Imperial College, Blackett Lab, London, UNITED KINGDOM.

9:30 AM M4.2
KINETIC PATHWAYS FOR THE STRESS-DRIVEN 2D TO 3D TRANSITION, Keming Chen, D. E. Jesson, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN; Thomas G. Thundat, R. J. Warmack, Oak Ridge National Laboratory, Health Science Research Div, Oak Ridge, TN; S. J. Pennycook, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN.

9:45 AM M4.3
EFFECT OF SURFACE ORIENTATION ON THE GROWTH AND OPTICAL PROPERTIES OF SELF-ASSEMBLED InP QUANTUM DOTS, Casper M. Reaves, Univ of California-S Barbara, Dept of Materials, Santa Barbara, CA; Rod I. Pelzel, Henry Weinberg, Univ of California-S Barbara, Dept of Chemical Engr, Santa Barbara, CA; Steven P. DenBaars, Univ of California-S Barbara, Dept of Materials, Santa Barbara, CA.

10:00 AM M4.4
A SELF-ORGANIZED MOLECULAR BEAM EPITAXIAL GROWTH OF THE InSb/AlGaSb QUANTUM DOTS ON HIGH-INDEX GaAs SUBSTRATES, Mitsuaki Yano, Osaka Inst of Technology, Dept of New Materials Research Ctr, Osaka, JAPAN; K. Koike, M. Inoue, T. Saitoh, K. Yoh, Hokkaido Univ, RCIQE, Sapporo, JAPAN.

10:15 AM BREAK

10:45 AM M4.5
STRUCTURAL INVESTIGATIONS OF SELF-ASSEMBLED Ge DOTS BY X-RAY DIFFRACTION AND REFLECTION, Anton A. Darhuber, Univ Linz, Dept Halbleiterphysik, Linz, AUSTRIA; V. Holy, Masaryk Univ, Brno, CZECH REPUBLIC; J. Stangl, Gunther Bauer, Univ Linz, Dept of Physics, Linz, AUSTRIA; P. Schittenhelm, Gerhard Abstreiter, Technische Univ Munich, Walter-Schottky-Inst, Garching, GERMANY.

11:00 AM M4.6
ANTIMONY CLUSTER MANIPULATION ON THE SI(100) SURFACE BY MEANS OF STM, Ivan I. Kravchenko, Univ of Florida, Dept of Physics, Gainesville, FL; Craig Tomas Salling, Univ of Illinois-Urbana, Beckman Inst, Urbana, IL; Max G. Lagally, Univ of Wisconsin-Madison, Dept of MS&E, Madison, WI.

11:15 AM M4.7
DIRECT FORMATION OF FINE STRUCTURE BY LOW ENERGY FOCUSED ION BEAM, Toyohiro Chikyow, Nat Research Inst for Metals, Surface & Interface, Ibaraki, JAPAN; Nobuyuki Koguchi, Nat Research Inst for Metals, Tsukuba Ibaraki, JAPAN; Amane Shikanai, Waseda Univ, Shinjyuku, JAPAN.

11:30 AM M4.8
NATURE OF THE REFLECTANCE DIFFERENCE ANISOTROPHY INDUCED BY THE SELF-ASSEMBLY OF Ga AND Al CHAINS on Si(112), Orest J. Glembocki, Naval Research Laboratory, Washington, DC; Sharka M. Prokes, Naval Research Laboratory, Electronic Science & Tech Div, Washington, DC.

11:45 AM M4.9
KINKLESS STRAIGHT BISMUTH LINE IN THE Si(001) TERRACE, Kazushi Miki, Electrotechnical Laboratory, Ibaraki, JAPAN; J.H.G. Owen, D. R. Bowler, G.A.D. Briggs, D. G. Pettifor, Oxford Univ, Dept of Materials, Oxford, UNITED KINGDOM.

SESSION M5: CONTROLLED GROWTH I: SURFACE AND INTERFACE PROPERTIES
Chairs: Tadeusz Bryskiewicz and Kang L. Wang
Tuesday Afternoon, December 3, 1996
Salon C/D (M)

1:30 PM *M5.1
PHYSICS AND CONTROL OF Si/Ge HETEROINTERFACES , Susumu Fukatsu, Univ of Tokyo, Tokyo, JAPAN.

2:00 PM *M5.2
FACET FORMATION IN SUBMICRON SELECTIVE GROWTH IN Si/SiGe GAS SOURCE MOLECULAR BEAM EPITAXY, Kang L. Wang, Univ of California-Los Angeles, Dept of Electrical Engr, Los Angeles, CA.

2:30 PM BREAK

3:00 PM M5.3
SURFACTANT-MEDIATED SI/GE EPITAXIAL CRYSTAL GROWTH, Eunja Kim, Chan Wuk Oh, Jeonbuk National Univ, Dept of Physics, Jeonbuk, SOUTH KOREA; Young Hee Lee, Michigan State Univ, Dept of Physics & Astronomy, East Lansing, MI.

3:15 PM M5.4
PHOTOLUMINESCENCE AND SECONDARY ION MASS SPECTROMETRY INVESTIGATIONS OF SiGe/Si SINGLE QUANTUM WELL STRUCTURES GROWN BY Sb SURFACTANT-MEDIATED MOLECULAR BEAM EPITAXY, Stefan Nilsson, Inst of Semiconductor Physics, Frankfort, GERMANY; H. P. Zeindl, Dietmar Kruger, Inst for Semiconductor Physics, Frankfurt (Oder), GERMANY.

3:30 PM M5.5
GROWTH OF SiGe/Si:B HETEROSTRUCTURES ON HF-PASSIVATED Si(001) USING A COMMERCIAL UHV-CVD REACTOR, Hugues Lafontaine, D. C. Houghton, R. L. Williams, Jean-Marc Baribeau, N. L. Rowell, B. Mason, National Research Council, Inst for Microstructural Sciences, Ottawa, CANADA.

3:45 PM M5.6
GROWTH OF ZnSe-BASED COMPOUNDS ON Ge-TERMINATED GaAs SURFACE, Tohru Saitoh, Akio Watakabe, Ayumu Tsujimura, Matsushita Electric Ind Co Ltd, Semiconductor Research Ctr, Osaka, JAPAN; Takashi Nishikawa, Matsushita Electric Ind Co Ltd, Semicondutor Research Center, Osaka, JAPAN; Yoichi Sasai, Matsushita Electric Ind Co Ltd, Semiconductor Research Center, Osaka, JAPAN.

4:00 PM M5.7
ATOMIC LAYER EPITAXY FOR II-VI MATERIAL GROWTH, Yi Luo, David A. Slater, Richard M. Osgood, Columbia Univ, Columbia Radiation Lab, New York, NY.

4:15 PM M5.8
ANISOTROPY IN ATOMIC-SCALE INTERFACE STRUCTURE AND MOBILITY IN SUPERLATTICES, Albert Y. Lew, Edward T. Yu, Univ of California-San Diego, Dept of E&EC, La Jolla, CA ; Song-Lin Zuo, Univ of California-San Diego, Dept of Electrical & Computer Engr, La Jolla, CA; Richard H. Miles, Hughes Research Laboratories, Malibu, CA.

4:30 PM M5.9
INTERFACE ROUGHNESS IN STRAINED Si/SiGe MULTILAYERS, Anton A. Darhuber, Univ Linz, Dept Halbleiterphysik, Linz, AUSTRIA; V. Holy, Masaryk Univ, Brno, CZECH REPUBLIC; J. Stangl, Gunther Bauer, Univ Linz, Dept of Physics, Linz, AUSTRIA; J. Nutzel, Technische Univ Munich, Garching, GERMANY; Gerhard Abstreiter, Technische Univ Munich, Walter-Schottky-Inst.

4:45 PM M5.10
SURFACE ROUGHENING AND COMPOSITION MODULATION OF ZnSe-RELATED II-VI EPITAXIAL FILMS, Shigetaka Tomiya, Sony Research Ctr, Ctr for Materials Analysis, Kanagawa, JAPAN; Hironori Tsukanoto, Satoshi Itoh, Kazushi Nakano, Etsuo Morita, Akira Ishibashi, Sony Corp, Research Center, Kanagawa, JAPAN.

SESSION M6: POSTER SESSION
Chair: J. M. Woodall
Tuesday Evening, December 3, 1996
8:00 P.M.
Grand Ballroom/Constitution (S)

M6.1
IN SITU INFRARED OBSERVATION OF HYDROGENATION, OXIDATION, AND ADSORPTION ON SILICON SURFACES IN SOLUTIONS, Yoshihiro Sugita, Satoru Watanabe, Fujitsu Laboratories Ltd, Electron Devices & Materials Lab, Atsugi, JAPAN.

M6.2
INVESTIGATION OF NONRADIATIVE RECOMBINATION IN AIV SEMICONDUCTORS BY PHOTOLUMINESCENCE UNDER PULSED EXCITATION, Victor Yu. Timoshenko, Moscow State Univ, Faculty of Physics, Moscow, RUSSIA; J. Rappich, Hahn-Meitner-Inst, Ateilung Photovoltaik, Berlin, GERMANY; Thomas Dittrich, Technische Univ Munich, Dept of Physics, Garching, GERMANY.

M6.3
XPS ANALYSIS OF InP PASSIVATED WITH THIOUREA/AMMONIA SOLUTIONS AND THIN CdS FILMS, Helen M. Dauplaise, Andrew Davis, Kenneth Vaccaro, Joseph P. Lorenzo, USAF Rome Laboratory, Opto-electronic Components Branch, Hanscom AFB, MA.

M6.4
SURFACE OXIDATION STUDY OF SILICON-DOPED GaAs WAFERS BY FTIR SPECTROSCOPY, Ruoh-Haw Chang, Univ of Maryland, Dept of Matls & Nuclear Engrg, College Park, MD; Mohamad Al-Sheikhly, Univ of Maryland, Dept of M&NE, College Park, MD; Aris Christou, Univ of Maryland, Dept of Materials Engr, College Park, MD.

M6.5
ULTRA THIN SiO2 MASK LAYER FOR NANO-SCALE SELECTIVE AREA PECVD OF Si, Jung-Woo Park, JRCAT-ATP, Ibaraki, JAPAN; Tetsuji Yasuda, NAIR, Ibaraki, JAPAN; Kazuyuki Ikuta, NAIR, Joint Res Ctr for Atom Technology, Ibaraki, JAPAN; L. H. Kuo, JRCAT-ATP, Ibaraki, JAPAN; Satoshi Yamasaki, NAIR, Ibaraki, JAPAN.

M6.6
CHEMICAL CHARACTERIZATION BY FT-IR SPECTROMETRY AND MODIFICATION OF THE VERY FIRST ATOMIC LAYER OF A TiO NANOSIZED POWDER, Marie-Isabelle Baraton, Univ of Limoges, LMCTS URA 320 CNRS, Limoges, FRANCE; Lhadi Merhari, Ceramec, R&D, Limoges, FRANCE; Fabienne Chancel, Jerome Tribout, Univ de Limoges, Limoges, FRANCE.

M6.7
EFFECTS OF DOPING ON HYDROGEN DESORPTION TEMPERATURES AND CONCOMITANT Si GROWTH MODE TRANSITION TEMPERATURES BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION, John L. Fretwell, Univ of Texas-Austin, Dept of Electrical Engr, Austin, TX; Bruce Doris, Univ of Texas-Austin, Dept of Physics, Austin, TX; Rajan Sharma, Sanjay K. Banerjee, Univ of Texas-Austin, Dept of Electrical Engr, Austin, TX.

M6.8
LOW TEMPERATURE GROWTH AND CHARACTERIZATION OF SILICON DELTA DOPED Ga In P/GaAs HETEROSTRUCTURES BY FLOW MODULATION ORGANOMETALLIC VAPOR PHASE EPITAXY, Joseph A Smart, David T. Emerson, Cornell Univ, Dept of Electrical Engr, Ithaca, NY; Victoria A. Williams, Eduardo M. Chumbes, Cornell Univ, Dept of Electrical Engr, Ithaca, NY; James R. Shealy, Cornell Univ, Dept of Electrical Engr, Ithaca, NY.

M6.9
DIRECT BANDGAP QUANTUM WELLS ON GaP, Jong-Won Lee, Cornell Univ, Dept of Electrical Engr, Ithaca, NY; Alfred T. Schremer, Dan Fekete, Cornell Univ, Dept of Electrical Engr, Ithaca, NY; James R. Shealy, Cornell Univ, Dept of Electrical Engr, Ithaca, NY; Joseph M. Ballantyne, Cornell Univ, Dept of Electrical Engr, Ithaca, NY.

M6.10
FORMATION OF LARGE CONDUCTION BAND DISCONTINUITIES OF HETEROINTERFACES USING CdF AND CaF ON Si(111), Akira Izumi, JAIST, Dept of Materials Science, Ishikawa, JAPAN.

M6.11
VALENCE BAND PHOTOELECTRON SPECTROSCOPY OF ELECTRONICALLY DECOUPLED SEMICONDUCTING QUANTUM FILMS OF INSE, Wolfram Jaegermann, Andreas Klein, Christian Pettenkofer, Oliver Lang, Ruediger Schlaf, Hahn-Meitner-Inst, Grenzflaechen, Berlin, GERMANY.

M6.12
THE ROLE OF IMPURITIES IN A MOLECULAR BEAM EPITAXY MODEL, Luis Nunes Amaral, Boston Univ, Dept of Physics, Boston, MA; Joachim Krug, Univ-GH Essen, Fachbereich Physik, Essen, GERMANY.

M6.13
MODIFICATION OF THE SURFACE BAND BENDING OF A SILIFCON CCD FOR LOW-ENERGY ELECTRON DETECTION, Qiuming Yu, S. Tom Elliot, Jet Propulsion Laboratory, Pasadena, CA; T. A. Tombrello, California Inst of Technology, Pasadena, CA; Shouleh Nikzad, Jet Propulsion Laboratory, Pasadena, CA; Aimee L. Smith, MIT, Dept of Matls Science, Cambridge, MA.

M6.14
SURFACE ENHANCED RAMAN SCATTERING (SERS) AS A PROBE FOR THE SURFACES AND INTERFACES OF SEMICONDUCTORS, Lucia G. Quagliano, Daniela Orani, CNR, IMAI, Roma, ITALY.

M6.15
SYNTHESIS AND CHARACTERIZATION OF NANOMETER-SCALE SMOOTH FILMS OF ANATASE TITANIUM DIOXIDE, Albert Goossens, Roel van de Krol, Joop Schoonman, Delft Univ of Technology, Applied Inorganic Chemistry Lab, Delft, NETHERLANDS.

M6.16
IMPROVEMENT OF ULTRATHIN OXIDES BY POST-OXIDATION ANNEALING, Tomoyuki Sakoda, Texas Instruments, Inc., Tsukuba Research & Development Ctr Ltd, Ibaraki, JAPAN; Mieko Matsumura, Yasushiro Nishioka, Texas Instruments Japan Ltd, Advanced Materials & Processes, Ibaraki, JAPAN.

M6.17
THERMODYNAMIC CRITERION FOR STABILITY OF AMORPHOUS INTEGRANULAR FILMS IN SILICON, Pawel Keblinski, Simon Phillpot, D. Wolf, Argonne National Laboratory, Materials Science Div, Argonne, IL; H. Gleiter, Forschungszentrum Karlsruhe, Karlsruhe, GERMANY.

M6.18
ELECTRICAL PROPERTIES OF DIELECTRICS, Hyeon-Seag Kim, Stephen A. Campbell, Univ of Minnesota, Dept of Electrical Engr, Minneapolis, MN; David C. Gilmer, Univ of Minnesota, Dept of Chemistry, Minneapolis, MN; Dennis L. Polla, Univ of Minnesota, Dept of Electrical Engr, Minneapolis, MN.

M6.19
TRACE METAL CONTAMINATION EFFECTS ON MOS INTERFACIAL PROPERTIES, Scott E. Beck, Air Products & Chemicals Inc, Allentown, PA; S. Bedge, Lehigh Univ, Dept of Chemical Engr, Bethlehem, PA; Mark A. George, Air Products & Chemicals Inc, Allentown, PA; D. W. Hess, Lehigh Univ, Dept of Chemical Engr, Bethlehem, PA; Daniel A. Moniot, Eric A. Robertson, David A. Bohling, Air Products & Chemicals Inc, Allentown, PA.

M6.20
INTERFACE PROPERTIES OF Si N /Si/n-GaAs STRUCTURE GROWN ON Ga-As(111)B SUBSTRATE, Dae-Gyu Park, Univ of Illinois-Urbana, Materials Sci & Eng, Urbana, IL; D. M. Diatezua, S. N. Mohammad, Z. Chen, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL; H. Morkoc, Univ of Illinois-Urbana, Coordinated Science Lab, Urbana, IL.

M6.21
INTERFACIAL LAYER FORMATION OF A HEAT TREATED TEOS BASED OXIDE PREPARED BY A PECVD TECHNIQUE, Dong-Soo Jeong, Samsung Electronics Co Ltd, Micro Pilot Operation Group, Kyungki-do, SOUTH KOREA; Tae-Jong Lee, Samsung Electronics Co Ltd, Micro Pilot Operations Group, Kyungki-Do , SOUTH KOREA; Chang-Sub Song, Sang-Yul Lee, Chang-Hyun Park, Samsung Electronics Co Ltd, Micro Pilot Operation Group, Kyunggi-Do, KOREA.

M6.22
FIELD EMISSION THROUGH DIAMOND/Mo AND DIAMOND/Si INTERFACES, W. B. Choi, A. F. Myers, J. J. Cuomo, J. J. Hren, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

M6.23
MONITORING OF DOPANT ACTIVATION IN SUB-SURFACE P-TYPE Si USING THE SURFACE CHARGE PROFILING (SCP) METHOD, Paul A. Roman, James A. Staffa, Jerzy Ruzyllo, Pennsylvania State Univ, Dept of Electrical Engr, University Park, PA; Emil Kamieniecki, QC Solutions Inc, Woburn, MA.

M6.24
SURFACE ADSORPTION KINETICS OF Ga AND Al CHAINS ON Si(112) FACET SURFACES, Sharka M. Prokes, Naval Research Laboratory, Electronic Science & Tech Div, Washington, DC; Orest J. Glembocki, Naval Research Laboratory, Washington, DC.

M6.25
EPITAXIAL GROWTH AND ELECTRICAL PROPERTIES OF METAL/Si Ge /Si STRUCTURE, Zhiqing (Jack) Shi, NASA Goddard Space Flight Ctr, Greenbelt, MD; Lili He, Northern Illinois Univ, Dept of Electrical Engr, DeKalb, IL; Y. D. Zheng, Nanjing Univ, Dept of Physics, Nanjing, CHINA.

M6.26
A STUDY OF THE INTERACTION BETWEEN Cu Ge AND (100) SI, AND ITS EFFECT ON CONTACT PROPERTIES, Mark Borek, Serge Oktyabrsky, M. O. Aboelfotoh, Jagdish Narayan, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

M6.27
ELECTRICAL CHARACTERIZATION OF IN SCHOTTKY CONTACTS TO n-In Ga P GROWN ON n -GaAs BY METAL ORGANIC VAPOR PHASE EPITAXY , Nevel Marcano, Univ de Oriente, Dept Fiscia, Sucre, VENEZUELA; Amar Singh, Univ de Oriente, Dept Fisica, Sucre, VENEZULA.

M6.28
CONVERSION TUNNELING IN NON-IDEAL SCHOTTKY BARRIERS: VIRTUAL RESONANCE MANIFESTATION AND INTERFACE STATES INFLUENCE, Dmitry A. Romanov, Inst of Semiconductor Physics, Dept of Theoretical Physics, Novosibirsk, RUSSIA; Alexander V. Kalameitsev, Inst of Semiconductor Physics, Theoretical Physics, Novosibirsk, RUSSIA; Anatoliy P. Kovchavtsev, Igor M. Subbotin, Inst of Semiconductor Physics, No 14 Lab, Novosibirsk, RUSSIA.

M6.29
ADHESION STRENGTH OF CVD Cu TO BARRIER LAYERS/ADHESION PROMOTERS FOR ULSI APPLICATIONS, Sarah Lane, Alain E. Kaloyeros, Greg Braeckelmann, Dirk Manger, Jean Kelsey, SUNY-Albany, Dept of Physics, Albany, NY.

M6.30
IN SITU ETCH TO IMPROVE CHEMICAL BEAM EPITAXY REGROWN AlGaAs/GaAs INTERFACES FOR HETEROJUNCTION BIPOLAR TRANSISTOR APPLICATIONS, Yue-Ming Hsin, Nein-yi Li, C. W. Tu, Peter Asbeck, Univ of California-San Diego, Dept of Electrical & Computer Engr, La Jolla, CA.

M6.31
SUPPRESSION OF SURFACE SiO LAYER AND SOLID-PHASE EPITAXY OF AMORPHOUSLY-DEPOSITED Si FILMS USING HEATING-UP UNDER Si H ENVIRONMENT, Tae-Hee Choe, Seung-Eui Nam, Hyoung-June Kim, Hong-Ik Univ, Dept of ME&MS, Seoul, SOUTH KOREA.

M6.32
SOLID PHASE CRYSTALLIZATION OF LPCVD AMORPHOUS Si FILMS BY NUCLEATION INTERFACE CONTROL, Eiu-Hoon Hwang, Jae-Sang Ro, Hong-Ik Univ, Dept of Metallurgy & Matls Science, Seoul, SOUTH KOREA.

M6.33
LOW-TEMPERATURE HOMOEPITAXIAL GROWTH ON (111) Si THROUGH A Pb OVERLAYER, Li-Chung Wei, National Tsing Hua Univ, Inst of Nuclear Science, Hsinchu, TAIWAN; G. D. Wilk, J. C. Chervinsky, Harvard Univ, Div of Engr & Applied Sciences, Cambridge, MA; J. A. Golovchenko, Harvard Univ, Dept of Engr & Applied Sciences, Cambridge, MA; Frans Spaepen, Harvard Univ, Div of Engr & Applied Sciences, Cambridge, MA.

SESSION M7: CONTROLLED GROWTH II: SELECTIVE AREA EPITAXY
Chair: S. M. Prokes
Wednesday Morning, December 4, 1996
Salon C/D (M)

8:30 AM *M7.1
STRUCTURAL DEFECTS IN THICK InGaAs LAYERS GROWN BY LPEE ON PARTIALLY MASKED GaAs SUBSTRATES, Tadeusz Bryskiewicz, Crystar Research Inc, Victoria , CANADA.

9:00 AM M7.2
GaInP SELECTIVE AREA EPITAXY FOR HBT APPLICATIONS, Sang H. Park, Shyh-Liang Fu, Paul K.L. Yu, Peter Asbeck, Univ of California-San Diego, Dept of Electrical & Computer Engr, La Jolla, CA.

9:15 AM M7.3
SELECTIVE GROWTH OF MOVPE ON AlGaAs/GaAs PATTERNED SUBSTRATES FOR QUANTUM NANOSTRUCTURES, Takashi Fukui, Makoto Sakuma, Kazuhide Kumakura, Junichi Motohisa, Hokkaido Univ, RCIQE, Hokkaido, JAPAN.

9:30 AM M7.4
PROCESS IMPROVEMENTS OF A CONVENTIONAL TUBULAR HOT-WALL LPCVD SYSTEM FOR SELECTIVE EPITAXIAL GROWTH OF SILICON-GERMANIUM STRAINED-LAYERS, I-Ming Lee, Christos G. Takoudis, Purdue Univ, School of Chemical Engr, West Lafayette, IN; Wei-Chung Wang, John P. Denton, Gerold W. Neudeck, Purdue Univ, School of Electrical Engr, West Lafayette, IN; Michael T.K. Koh, Eric P. Kvam, Purdue Univ, School of Materials Engr, West Lafayette, IN.

9:45 AM M7.5
ATOMIC LAYER GRAPHOEPITAXY: A ROUTE TO HIGH QUALITY SINGLE DOMAIN FILM GROWTH IN LARGE MISMATCH SYSTEMS, David J. Wallis, N. D. Browning, S. Sivananthan, Univ of Illinois-Chicago, Dept of Physics, Chicago, IL; Peter D. Nellist, S. J. Pennycook, Oak Ridge National Laboratory, Solid State Div, Oak Ridge , TN.

10:00 AM BREAK

SESSION M8: OPTICAL CHARACTERIZATION: REAL TIME AND EX-SITU
Chair: Thomas F. Kuech
Wednesday Morning, December 4, 1996
Salon C/D (M)

10:30 AM *M8.1
MULTILEVEL APPROACHES TOWARDS PROCESS MONITORING AND CONTROL, D. E. Aspnes, Nikolaus Dietz, Uwe Rossow, North Carolina State Univ, Dept of Physics, Raleigh, NC; Klaus J. Bachmann, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

11:00 AM M8.2
REAL-TIME STUDY ON HETEROEPITAXIAL GaAs AND GAP GROWTH PROCESSES ON STRUCTURED Si(100) SUBSTRATES, Shin Yokoyama, Hiroshima Univ, Res Ctr for Integrated Systems, Hiroshima, JAPAN; Nikolaus Dietz, North Carolina State Univ, Dept of Physics, Raleigh, NC; Y. Sasaki, Hiroshima Univ, Res Ctr Nanodevices & Systems, Hiroshima, JAPAN; J. Maeda, Hirsohima Univ, Research Center for Nanodevices & Systems, Higashi-Hiroshima, JAPAN; Nkadi Sukdi, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

11:15 AM M8.3
STRAIN-RELATED EXCITONIC IN-PLANE OPTICAL ANISOTROPHY IN (100) InGaAs/InAlAs/InP MULTIPLE QUANTUM WELLS, Athanasios Dimoulas, Univ of Maryland, Dept of M&NE, College Park, MD; R. Tober, Army Research Laboratory, Adelphi, MD; Aris Christou, Univ of Maryland, Dept of Materials Engr, College Park, MD; R. Leavitt, Army Research Laboratory, Adelphi, MD.

11:30 AM M8.4
InGaAs/InGaAsP/InGaP QUANTUM WELL STRUCTURE, Jiang Li, Jutong Liu, Univ of Wisconsin-Madison, Dept of Chemical Engr, Madison , WI; L. J. Mawst, A. Bhattacharya, Univ of Wisconsin-Madison, Dept of ECE, Madison, WI; Thomas F. Kuech, Univ of Wisconsin-Madison, Dept of Chemical Engr, Madison, WI.

11:45 AM M8.5
BAND LINE-UP OF VAN DER WAALS EPITAXY HETEROINTERFACES, Wolfram Jaegermann, Ruediger Schlaf, Christian Pettenkofer, Thomas Loeher, Oliver Lang, Andreas Klein, Hahn-Meitner-Inst, Grenzflaechen, Berlin, GERMANY.

SESSION M9: OPTICAL PROPERTIES OF THIN FILMS AND NANOSTRUCTURES
Chair: D. E. Aspnes
Wednesday Afternoon, December 4, 1996
Salon C/D (M)

1:30 PM *M9.1
LOCALIZED PHOTOLUMINESCENCE STUDIES ON GaAs AND NITRIDE FILMS BY NEAR-FIELD SCANNING OPTICAL MICROSCOPY T.F. Kuech, Jutong Liu, and S.A. Safvi, Department of Chemical Engineering, University of Wisconsin, Madison, WI.

(Invited Presentation), Thomas F. Kuech, S. A. Safvi, Jutong Liu, Univ of Wisconsin-Madison, Dept of Chemical Engr, Madison, WI.

2:00 PM M9.2
INVESTIGATION OF ELECTRIC FIELDS, SURFACE CHARGES, AND CONDUCTION BAND OFFSETS IN ZnSe/GaAs HETEROJUNCTIONS BY A NOVEL PHOTOREFLECTANCE TECHNIQUE, David J. Dougherty, MIT, Cambridge, MA; Siegfried B. Fleischer, Jody L. House, Emily Warlick, Easen Ho, Gale S. Petrich, Leslie A. Kolodziejski, Erich P. Ippen, MIT, Dept of Electrical Engr, Cambridge, MA.

2:15 PM M9.3
CONTACTLESS ELECTROREFLECTANCE STUDY OF In Ga As/InP MULTIPLE QUANTUM WELL STRUCTURES INCLUDING OBSERVATION OF INTERFACE ELECTRIC FIELDS, Fred H. Pollak, Brooklyn College, Dept of Physics, Brooklyn, NY; John G. Simmons, David A. Thompson, McMaster Univ, Ctr for Electrophotonic Matls & Devices, Hamilton, CANADA; Lyudmila Malikova, Junzuo Wan, Brooklyn College, Dept of Physics, Brooklyn, NY.

2:30 PM M9.4
EVOLUTION OF STRUCTURE AND OPTICAL BEHAVIOUR THROUGH THE 2D TO 3D MORPHOLOGY CHANGE IN InAs GROWTH ON GaAs(001), A. Kalburge, T. R. Ramachandran, R. Heitz, N. P. Kobayashi, Q. Xie, P. Chen, A. Madhukar, Univ of Southern California, Dept of Matls Science & Physics, Los Angeles, CA.

2:45 PM M9.5
METROLOGY OF VERY THIN SILICON EPITAXIAL FILMS USING SPECTROSCOPIC ELLIPSOMETRY, Weize Chen, MIT, Dept of MS&E, Cambridge, MA; Rafael Reif, MIT, Dept of Electrical Engr & Computer Science, Cambridge, MA.

3:00 PM BREAK

SESSION M10: DIELECTRIC/SEMICONDUCTOR INTERFACES
Chair: J. M. Gibson
Wednesday Afternoon, December 4, 1996
Salon C/D (M)

3:30 PM M10.1
INTERFACIAL ARSENIC FROM WET OXIDATION OF Al Ga As/GaAs: ITS EFFECTS ON ELECTRONIC PROPERTIES AND NEW APPROACHES TO MIS DEVICE FABRICATION, Carol I. H. Ashby, Sandia National Laboratories, Compound Semiconductor Materials & Processes, Albuquerque, NM; John P. Sullivan, Sandia National Laboratories, Adv Materials & Devices Sciences, Albuquerque, NM; Paula P. Newcomer, Sandia National Laboratories, Org 1152, Albuquerque, NM; Nancy A. Missert, Sandia National Laboratories, Albuquerque, NM; Hong Q. Ho, B. E. Hammons, Sandia National Laboratories, Dept of Compound Semicond Matls & Processes, Albuquerque, NM; Albert G. Baca, Sandia National Laboratories, Compound Semiconductor Matls & Processes, Albuquerque, NM.

3:45 PM M10.2
MICROSTRUCTURE AND INTERFACIAL PROPERTIES OF LATERALLY OXIDIZED Al Ga As, R. D. Twesten, Sandia National Laboratories, Semiconductor & Nanostructure Physics, Albuquerque, NM; David M. Follstaedt, K. D. Choquette, Sandia National Laboratories, Albuquerque, NM.

4:00 PM M10.3
THE EFFECT OF PROCESSING CONDITIONS ON THE STRUCTURE OF BURIED INTERFACES BETWEEN SILICON AND SILICON DIOXIDE, Xidong Chen, Univ of Illinois-Urbana, Dept of Physics, Urbana, IL; J Murray Gibson, Univ of Illinois-Urbana, Dept of Physics & Matls Science, Urbana, IL.

4:15 PM M10.4
COMPOSITION AND BONDING IN THE OXYNITRIDE/Si(100) SYSTEM, Evgeni Gusev, H. C. Lu, E. Garfunkel, T. Gustafsson, Rutgers Univ, Dept of Chemistry, Piscataway, NJ; Martin L. Green, D. Brasen, Bell Labs, Lucent Technologies, Murray Hill, NJ; L. C. Feldman, Vanderbilt Univ, Dept of Physics, Nashville, TN.

4:30 PM M10.5
ION INDUCED NITRIDATION OF Si(111)-7x7 SURFACE: STM INVESTIGATION, Jeong S. Ha, ETRI, Dept of Basic Research, Taejon, SOUTH KOREA; Kang-Ho Park, Soo Yun, El-Hang Lee, Seong-Ju Park, ETRI, Dept of Research, Taejon, SOUTH KOREA.

4:45 PM M10.6
EFFECT OF MICROSTRUCTURE ON ELECTRON EMISSION FROM DIAMOND COATINGS, A. F. Myers, W. B. Choi, J. J. Cuomo, J. J. Hren, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

SESSION M11/Ca10: METAL/SEMICONDUTOR INTERFACES: STRUCTURAL ASPECTS
Chairs: Victor M. Bermudez and Steven K. Brierley
Thursday Morning, December 5, 1996
Salon E (M)

8:30 AM *M11.1/Ca10.1
CHEMICAL AND STRUCTURAL PHENOMENA AT METAL-SiC AND METAL-GaN INTERFACES, Victor M. Bermudez, Naval Research Laboratory, Code 6862, Washington, DC.

9:00 AM M11.2/Ca10.2
INTERFACE AND DEFECT STRUCTURE OF EPITAXIAL Pb FILMS GROWN ON Si(111) AND Si(001), David Loretto, Harvard Univ, Applied Sciences Div, Cambridge, MA; C. A. Lucas, Lawrence Berkeley National Laboratory, Materials Science Div, Berkeley, CA; S. Q. Xiao, Lawrence Berkeley National Laboratory, Natl Ctr for Electron Microscopy, Berkeley, CA; Uli Dahmen, Lawrence Berkeley National Laboratory, Berkeley, CA.

9:15 AM M11.3/Ca10.3
HRLEED AND STM STUDY OF MISORIENTED Si (100) WITH AND WITHOUT A Te OVERLAYER, Salima Yala, Univ of Illinois-Chicago, Dept of Physics, Chicago, IL; Pedro A. Montano, Argonne National Laboratory, Argonne, IL.

9:30 AM M11.4/Ca10.4
SELECTIVE DEPOSITION OF Al ON H/Si(100) SURFACES, T. -C. Shen, Univ of Illinois-Urbana, Beckman Inst, Urbana, IL; J. R. Tucker, C. Wang, Univ of Illinois-Urbana, Dept of Electrical & Computer Engr, Urbana, IL.

9:45 AM BREAK

10:15 AM M11.5/Ca10.5
INTERACTION OF METALS WITH SiGeC AND GeC ALLOYS: THE ROLE OF CARBON ON THERMAL AND ELECTRICAL STABILITY, Guohua Qiu, Univ of Delaware, Dept of Electrical Engr, Neward, DE; J. Olufemi Olowalafe, Univ of Delaware, Newark, DE; James Kolodzey, Univ of Delaware, Dept of Electrical Engr, Newark, DE; Bradley A. Orner, Univ of Delaware, Electrical Engineering, Newark, DE.

10:30 AM M11.6/Ca10.6
MICROSTRUCTURAL STUDIES OF Co SILICIDE LAYER FORMED ON SiGe AND SiGeC, Hugo Bender, Sing Jin, IMEC VZW, ARS, Leuven, BELGIUM; Ricardo Donaton, IMEC VZW, VMT, Leuven, BELGIUM; Karen Maex, IMEC VZW, Leuven, BELGIUM.

10:45 AM M11.7/Ca10.7
THIN FILMS OF CoSi CO-DEPOSITED ONTO Si Ge ALLOYS, Peter T. Goeller, North Carolina State Univ, Dept of Materials Science, Raleigh, NC; Robert J. Nemanich, Dale E. Sayers, Boyan I. Boyanov, North Carolina State Univ, Dept of Physics, Raleigh, NC.

11:00 AM M11.8/Ca10.8
EPITAXIAL COBALT SILICIDE FORMATION USING HIGH-TEMPERATURE SPUTTERING AND VACUUM ANNEALING, Ken Inoue, Karou Mikagi, Takamaro Kikkawa, NEC Corporation, ULSI Device Development Lab, Kanagawa, JAPAN; Raymond T. Tung, Bell Labs, Lucent Technologies, Murray Hill, NJ; Shinichi Chikaki, NEC Corporation, ULSI Device Development Lab, Kanagawa, JAPAN.

11:15 AM M11.9/Ca10.9
SEGREGATION OF COPPER TO CLEAN AND OXIDIZED (100) AND (111) SILICON SURFACES FROM INTERNAL PRECIPITATES, W. R. Wampler, Sandia National Laboratories, Albuquerque, NM.

11:30 AM M11.10/Ca10.10
SURFACE AND INTERFACE ANALYSIS OF THIN-FILM/Si (SUBSTRATE) CONTACTS BY SXES, H. Watabe, Okayama Univ, Okayama, JAPAN; Matohiro Iwami, Okayama Univ, Faculty of Sciences, Okayama, JAPAN; M. Kusaka, M. Hirai, Okayama Univ, Okayama, JAPAN; H. Nakamura, Osaka Electro-Communication Univ, Neyagawa, JAPAN.

11:45 AM M11.11/Ca10.11
NUCLEATION AND GROWTH OF EPITAXIAL CoGa ON GaAs, Brian E. Ishaug, Amir M. Dabiran, Univ of Minnesota, Dept of Electrical Engr, Minneapolis, MN; Chris J. Palmstrom, Univ of Minnesota, Dept of CE&MS, Minneapolis, MN; Philip I. Cohen, Univ of Minnesota, Dept of Electrical Engr, Minneapolis, MN.

SESSION M12: ELECTRICAL PROPERTIES OF METAL/SEMICONDUCTOR INTERFACES; METALLIZATION
Chairs: O. J. Glembocki and Yorim Shapira
Thursday Afternoon, December 5, 1996
Salon C/D (M)

1:30 PM *M12.1
IN-SITU CHARACTERIZATION OF SEMICONDUCTOR HETEROJUNCTIONS AND QUANTUM WELLS, Yorim Shapira, Tel Aviv Univ, Dept of Electrical Engr, Ramat-Aviv, ISRAEL.

2:00 PM M12.2
FORMATION OF Cu-Ge/GaAs METAL-SEMICONDUCTOR INTERFACES FOR LOW-RESISTANCE OHMIC CONTACTS, Serge Oktyabrsky, Mark Borek, M. O. Aboelfotoh, Jagdish Narayan, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

2:15 PM M12.3
STUDY ON ALLOYING BEHAVIOR AND ITS RELIABILITY IN THE Pt EMBEDDED METAL-n GaAs THIN OHMIC CONTACT SYSTEMS, Cha Yeon Kim, Won Sang Lee, Hyun Ja Kwon, Young Woo Jeong, Jeong Son Lee, LG Electronic Research Center, Seoul, SOUTH KOREA; Chung Nam Whang, YonSei Univ, Dept of Physics, Seoul, KOREA.

2:30 PM M12.4
IMPROVEMENT OF THE REFRACTORY METAL/n-GaAs INTERFACE BY LOW TEMPERATURE ANNEAL, Amar Singh, Luis Velasquez, Univ de Oriente, Dept Fisica, Sucre, VENEZULA.

2:45 PM M12.5
RELATIONSHIP BETWEEN STRUCTURAL AND ELECTRICAL PROPERTIES OF Zn-BASED CONTACTS TO p-GaAs: TOWARDS THE MECHANISM OF THE OHMIC CONTACT FORMATION, Eliana Kaminska, Anna Piotrowska, Inst of Electron Technology, Technol III-V Semicond, Warsaw, POLAND; Slawomir Kasjaniuk, Inst of Electron Technology, Tech III-V Semicond, Warszawa, POLAND; Stanislaw Gierlotka, UNIPRESS, PAS, Warszawa, POLAND.

3:00 PM BREAK

3:30 PM M12.6
NOVEL MSM PHOTODETECTORS ON SEMI-INSULATING InP, Joseph W. Palmer, SUNY-Buffalo, Dept of Electrical & Computer Engr, Amherst, NY; Wayne A. Anderson, SUNY-Buffalo, Dept of Electrical and Computer Engr, Amherst, NY.

3:45 PM M12.7
ENHANCED PHOTOYIELD WITH DECREASING FILM THICKNESS ON METAL-SEMICONDUCTOR STRUCTURES, Volker Hoffmann, Manfred Brauer, Peter Stauss, Gerd-Uwe Reinsperger, Manfred Schmidt, Hahn-Meitner-Inst, Photovoltaik, Berlin, GERMANY.

4:00 PM M12.8
INTERFACE DEGRADATION OF Si N /Si/n-GaAs STRUCTURE WITH HIGH TEMPERATURE ANNEALING, Dae-Gyu Park, Univ of Illinois-Urbana, Materials Sci & Eng, Urbana, IL; Z. Chen, D. M. Diatezua, S. N. Mohammad, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL; H. Morkoc, Univ of Illinois-Urbana, Coordinated Science Lab, Urbana, IL; S. A. Alterovitz, NASA Lewis Research Center, Cleveland, OH.

4:15 PM M12.9
BAND BENDING AND METALLIZATION OF SrTiO (001) AND Ba Sr TiO ; A SURFACE SCIENCE PERSPECTIVE, Matthew W. Copel, R. M. Tromp, Thomas M. Shaw, IBM T.J. Watson Research Ctr, Yorktown Heights, NY.

4:30 PM M12.10
EFFECTS OF THE GLASS SUBSTRATES PRETREATMENTS ON THE LEAKAGE CURRENT IN LOW-TEMPERATURE POLY-Si THIN FILM TRANSISTORS, Tae-Kyung Kim, Seoul National Univ, Dept of Metallurgical Engr, Seoul, SOUTH KOREA; Byung-ll Lee, Tae-Hyung Ihn, Seung-Ki Joo, Seoul National Univ, Dept of MS&E, Seoul, SOUTH KOREA.

4:45 PM M12.11
OPTICAL DETECTION OF THE SUPERCONDUCTING PROXIMITY EFFECT - TEMPERATURE DEPENDENT STUDIES, Troy A. Tanzer, Univ of Illinois-Urbana, Dept of Chemistry, Urbana, IL; Jeff F. Dorsten, Shell Development Chemical Company, Dept of X-Ray Analysis, houston, TX; Laura H. Greene, Adam C Abeyta, Igor V Roshchin, Univ of Illinois-Urbana, Dept of Physics, Urbana, IL; Paul W. Bohn, Univ of Illinois-Urbana, Dept of Chemistry, Urbana, IL.