Plenary and Invited Speakers

Plenary Speakers

Hideo OhnoHideo Ohno, Tohoku University
Spintronics Device—Scaling to Single Digit nm and More





 

Robert ChauRobert Chau, Intel Corporation
Process and Packaging Technology R&D for Moore’s Law Continuation and Beyond





 

James SpeckJames Speck, University of California, Santa Barbara
Revealing the Inner Working of GaN LEDs: Understanding Nonradiative Processes and Towards 100% Efficiency






 

Invited Speakers

  • Joerg Appenzeller, Purdue University
    Probabilistic Spin Logic Using Probabilistic Bits – p-bits

  • Kelson Chabak, Air Force Research Laboratory
    Lateral Gallium Oxide Transistors Towards Fast Power Switching

  • Josephine (Josei) Chang, Northrop Grumman Corporation
    Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for High Power Density, Energy Efficient RF Amplification

  • Jeehwan Kim, Massachusetts Institute of Technology

  • Tomas Palacios, Massachusetts Institute of Technology

  • Shintaro Shinjo, Mitsubishi Electric Corporation
    Millimeter-wave GaN-HEMT Modeling for Power Amplifiers

  • Jianping Wang, University of Minnesota

  • Joshua Yang, University of Massachusetts Amherst
    Memristive Materials and Devices for Unconventional Computing

  • Shimeng Yu, Georgia Institute of Technology
    Ferroelectric Devices for Compute-in-Memory: Array-Level Operations

DRC_Co-Sponsor MRS

DRC_Co-Sponsor EDS