Wide Bandgap Semiconductors


Diamond and Related Materials

Mark Goorsky, University of California, Los Angeles
Andrew Koehler,
U.S. Naval Research Laboratory
Jung-Hun Seo,
University at Buffalo, The State University of New York
Patrick Shea,
Northrop Grumman Corporation

Group III-Nitrides—Growth, Processing, Characterization, Theory and Devices

Zakaria Y. Al Balushi, University of California, Berkeley
Andrew Allerman,
Sandia National Laboratories
Srabanti Chowdhury,
Stanford University
Theeradetch Detchprohm,
Georgia Institute of Technology
Alan Doolittle,
Georgia Institute of Technology
Russell Dupuis,
Georgia Institute of Technology
Daniel Ewing,
Department of Energy’s Kansas City National Security Campus
Qhalid Fareed,
Texas Instruments
Daniel Feezell,
The University of New Mexico
Hiroshi Fujioka,
The University of Tokyo
Jennifer Hite,
U.S. Naval Research Laboratory
Andrew Koehler,
U.S. Naval Research Laboratory
Xiaohang Li,
King Abdullah University of Science and Technology
Michael Manfra,
Purdue University
Siddharth Rajan,
The Ohio State University
Shadi Shahedipour-Sandvik,
State University of New York Polytechnic Institute
Andrei Vescan,
RWTH Aachen University
Christian Wetzel,
Rensselaer Polytechnic Institute
Jonathan Wierer,
Lehigh University
Huili Grace Xing,
Cornell University

Silicon Carbide—Growth, Processing, Characterization, Theory and Devices

Joshua Caldwell, Vanderbilt University
MVS Chandrashekhar,
University of South Carolina
Sarit Dhar,
Auburn University
Michael Dudley,
Stony Brook University, The State University of New York
Daniel Ewing,
Department of Energy’s Kansas City National Security Campus
Nadeemullah Mahadik,
U.S. Naval Research Laboratory
Michael Spencer,
Morgan State University
Jun Suda,
Nagoya University