Plenary and Invited Speakers

Plenary Speakers

Hideo Ohno, Tohoku University
Spintronics Device—Scaling to Single Digit nm and More

Robert Chau, Intel Corporation
Process and Packaging Technology R&D for Moore’s Law Continuation and Beyond

James Speck, University of California, Santa Barbara
Revealing the Inner Working of GaN LEDs: Understanding Nonradiative Processes and Towards 100% Efficiency

Invited Speakers

• Joerg Appenzeller, Purdue University
  Probabilistic Spin Logic Using Probabilistic Bits – p-bits
  
  
• Kelson Chabak, Air Force Research Laboratory
  Lateral Gallium Oxide Transistors Towards Fast Power Switching
  
  
• Josephine (Josei) Chang, Northrop Grumman Corporation
  Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for High Power Density, Energy Efficient RF Amplification
  
  
• Jeehwan Kim, Massachusetts Institute of Technology
  
  
• Tomas Palacios, Massachusetts Institute of Technology
  
  
• Jianping Wang, University of Minnesota
  
  
• Yutaro Yamaguchi, Mitsubishi Electric Corporation
  Millimeter-wave GaN-HEMT Modeling for Power Amplifiers
  
  
• Joshua Yang, University of Massachusetts Amherst
  Memristive Materials and Devices for Unconventional Computing
  
  
• Shimeng Yu, Georgia Institute of Technology
  Ferroelectric Devices for Compute-in-Memory: Array-Level Operations