Meetings & Events

 

2007 MRS Spring Meeting Logo2007 MRS Spring Meeting & Exhibit


April 9-13, 2007
| San Francisco
Meeting Chairs: Timothy J. Bunning, Harold Y. Hwang, Debra Kaiser, Jennifer A. Lewis

Symposium H : Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies

2007-04-10   Show All Abstracts

Symposium Organizers

Yves Chabal Rutgers University
Alain Esteve CNRS
Nicolas Richard Commissariat a l’Energie Atomique
Glen Wilk ASM America
H1: Si Oxidation, High-k Growth
Session Chairs
Alex Demkov
David Vanderbilt
Tuesday AM, April 10, 2007
Room 3007 (Moscone West)

9:30 AM - **H1.1
Atomic-scale Modeling of Kinetic Processes During Silicon Oxidation.

Alfredo Pasquarello 1
1 , EPFL-SB-ITP-CSEA, Lausanne Switzerland

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10:00 AM - H1.2
Silicon and Oxygen Self-Diffusion in SiO2: A Contribution From First-principles Calculations.

Guido Roma 1 , Yves Limoge 1 , Layla Martin-Samos 2 1 , Nicolas Richard 3
1 Service de Recherches de Métallurgie Physique, CEA-Saclay, Gif sur Yvette France, 2 S3-center, University of Modena e Reggio Emilia, Modena Italy, 3 , CEA-DIF, Bruyère le Châtel France

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10:15 AM - H1.3
Using OXCAD Monte Carlo Package as a Characterization Tool of Silicon Oxide Growth.

Anne Hemeryck 1 , Alain Estève 1 , Nicolas Richard 2 , Mehdi Djafari Rouhani 1 , Andrew J. Mayne 3 , Yves J. Chabal 4 , Gérald Dujardin 3 , Geneviève Comtet 3
1 , LAAS - CNRS, Toulouse France, 2 , CEA - DIF, Bruyères Le Châtel France, 3 , LPPM - CNRS, Orsay France, 4 , Laboratory for Surface Modification, Rutgers University, New Jersey, United States

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10:30 AM - H1.4
XPS and STM Studies on Initial Oxidation of Si(110)-16x2

Maki Suemitsu 1 , Hideaki Togashi 1 , Atsushi Kato 1 , Yuya Takahashi 1 , Atsushi Konno 1 , Yoshihisa Yamamoto 1 , Yuden Teraoka 2 , Akitaka Yoshigoe 2 , Hidehito Asaoka 3
1 CIR, Tohoku University, Sendai Japan, 2 , Japan Atomic Energy Agency (JAEA), Kouto, Mikazuki-cho Japan, 3 , Japan Atomic Energy Agency (JAEA), Tokai, Ibaraki Japan

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10:45 AM - H1.5
Experimental Measurement of Surface Valence Charge Density in Silicon.

James Ciston 1 , Laurence Marks 1 , Robert Feidenhans’l 2 , Oliver Bunk 3 , Bin Deng 1 , Arun Subramanian 6 1 , Erik Lauridsen 5 , Gerard Falkenberg 4
1 Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States, 2 Niels Bohr Institute, University of Copenhagen, Copenhagen Denmark, 3 Paul Scherrer Institut, Swiss Light Source, PSI Switzerland, 6 , Intel Corporation, Santa Clara, California, United States, 5 Materials Research Department, Risø National Laboratory, Roskilde Denmark, 4 , HASYLAB, Hamburg Germany

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11:00 AM -
BREAK

11:30 AM - **H1.6
Modeling Defects in High-K Dielectrics on Silicon.

Jacob Gavartin 1 , David Munoz Ramo 1 , Alexander Shluger 1
1 London Centre for Nanotechnology, University College London, London United Kingdom

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12:00 PM - H1.7
Diffusion of O Vacancies near Si:HfO2 Interfaces: A First Principles Investigation.

Chunguang Tang 1 , R. Ramprasad 1
1 , University of Connecticut, Storrs, Connecticut, United States

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12:15 PM - H1.8
Oxygen Vacancy in Monoclinic HfO2: a Consistent Interpretation of Trap Assisted Conduction, Direct Electron Injection, and Optical Absorption Experiments

Peter Broqvist 1 2 , Alfredo Pasquarello 1 2
1 , EPFL-SB-ITP-CSEA, Lausanne Switzerland, 2 , IRRMA, Lausanne Switzerland

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12:30 PM - H1.9
Two Types of Oxygen Vacancies in Hf-based High-k Dielectrics - Existence of “Alive” and “Dead” Oxygen Vacancies.

Kenji Shiraishi 1 2 , Takashi Nakayama 3 , Seiichi Miyazaki 4 , Naoto Umezawa 5 , Kikuo Yamabe 1 , Heiji Watanabe 6 , Toyohiro Chikyow 5 , Yasuo Nara 7 , Keisaku Yamada 8
1 Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki, Japan, 2 , CREST-JST, Kawaguchi, Saitama, Japan, 3 Department of Physics, Chiba University, Chiba, Chiba, Japan, 4 Grauate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, Hiroshima, Japan, 5 , National Institute for Material Science, Tsukuba, Ibaraki, Japan, 6 Graduate School of Engineering, Osaka University, Suita, Osaka, Japan, 7 , Semiconductor Leading Edge Technologies Inc., Tsukuba, Ibaraki, Japan, 8 Nano Technology Research Laboratory, Waseda University, Shinjuku, Tokyo, Japan

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12:45 PM - H1.10
Fluorine Passivation of Vacancies in HfO2 Gate Oxide.

Koon-yiu Tse 1 , John Robertson 1
1 Engineering, Cambridge University, Cambridge United Kingdom

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H2: Si and Oxidation and High-k Growth
Session Chairs
A. Esteve
A. Pasquarello
Tuesday PM, April 10, 2007
Room 3007 (Moscone West)

2:30 PM - **H2.1
Density Functional Theory of High-k Dielectric Gate Stacks.

Alex Demkov 1
1 Department of Physics, The University of Texas, Austin, Texas, United States

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3:00 PM - H2.2
First-Principles Calculations of the Structure and Dielectric Properties of HfO2-SiO2-Si Stacks

Eric Cockayne 1
1 Ceramics Division, NIST, Gaithersburg, Maryland, United States

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3:15 PM - H2.3
Local Dielectric Permittivity of HfO2 Based Multi-layers: A First Principles Study.

Ning Shi 1 , Rampi Ramprasad 1
1 Department of Chemical, Materials & Biomolecular Engineering,Institute of Materials Science, University of Connecticut, Storrs, Connecticut, United States

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3:30 PM - H2.4
Fluorine Incorporation at HfO2/SiO2 Interfaces in High-k Metal-Oxide-Semiconductor Gate Stacks.

Jeong-Hee Ha 1 , Paul McIntyre 1 , Kyeongjae (KJ) Cho 2
1 Materials Science and Engineering, Stanford University, Stanford, California, United States, 2 Department of Physics, Department of Electrical Engineering, University of Texas at Dallas, Dallas , Texas, United States

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3:45 PM - H2.5
Chemical Properties of HfSiO:N / Si Stacks Studied by Auger and Photoemission Spectroscopy.

Eugenie Martinez 1 , Lionel Fourdrinier 1 , Olivier Renault 1 , François Martin 1
1 , CEA-LETI, Grenoble France

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4:00 PM -
BREAK

4:30 PM - **H2.6
Density Functional Theory Simulations of the Interfacial Electronic Structure of HfO2 Films on Ge.

Charles Musgrave 1
1 , Stanford University, Stanford , California, United States

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5:00 PM - H2.7
Theoretical Study of the Insulator/insulator Interface: Band Alignment at the SiO2/HfO2 Junction.

Onise Sharia 1 , Alex Demkov 1 , Gennadi Bersuker 2 , Byoung Hun Lee 2
1 Physics, The University of Texas, Austin, Texas, United States, 2 , SEMATECH, Austin, Texas, United States

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5:15 PM - H2.8
Defect States in HfO2 Caused by Silicate Formation or Oxygen Vacancies.

Dieter Schmeisser 1 , Hans-Juergen Engelmann 2 , Ehrenfried Zschech 2
1 Applied Physics, BTU Cottbus, Cottbus Germany, 2 , AMD Saxony, Dresden Germany

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5:30 PM - H2.9
High-Resolution X-ray Phototoelectron Spectroscopy Investigations on the Core-shell Interface of Nitrided Si Nanocrystals.

Joel Dufourcq 1 , Olivier Renault 2 , Corrado Crotti 5 , Nick Barrett 4 , Sylvie Bodnar 1 , Gilles Festes 1 , Pierre Mur 2 , Thierry Baron 3 , Romain Coppard 1
1 , Atmel Rousset, Rousset France, 2 , CEA-LETI-MINATEC, Grenoble France, 5 , C.N.R. Istituto Struttura Della Materia, Trieste Italy, 4 , CEA-DSM-DRECAM, Saclay France, 3 , CNRS-LTM, Grenoble France

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2007-04-11   Show All Abstracts

Symposium Organizers

Yves Chabal Rutgers University
Alain Esteve CNRS
Nicolas Richard Commissariat a l’Energie Atomique
Glen Wilk ASM America
H3: High-k/Semiconductor Interfaces I
Session Chairs
Y. Chabal
D. Schlom
Wednesday AM, April 11, 2007
Room 3007 (Moscone West)

9:30 AM - **H3.1
Scaling of Hafnium-based High-k Dielectrics.

Dina Triyoso 1 , Rama Hegde 1 , Rich Gregory 2 , David Gilmer 1 , James Schaeffer 1 , Srikanth Samavedam 1
1 ASTS, Freescale Semiconductor Inc., Austin, Texas, United States, 2 MMSTL, Freescale Semiconductor Inc., Tempe, Arizona, United States

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10:00 AM - H3.2
The Correlation Between the Growth Conditions and the Local Crystal Structure in Hf and Zr Based Oxide Thin Films.

Mehmet Sahiner 1 , Rebecca Weeks 1 , Brendan Benapfl 1 , Joseph Woicik 2
1 Physics, Seton Hall University, South Orange, New Jersey, United States, 2 , NIST, Gaithersburg, Maryland, United States

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10:15 AM - H3.3
A Nanoanalytical Investigation of Elemental Composition in High-k Dielectric Gate Stacks for GaAs Based MOSFET Devices.

Paolo Longo 1 , Alan Craven 1 , Jamie Scott 1 , Martin Holland 2 , Iain Thayne 2
1 Department of Physics and Astronomy, University of Glasgow, Glasgow United Kingdom, 2 Department of Electronics & Electrical Engineering, University of Glasgow, Glasgow United Kingdom

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10:30 AM - H3.4
Effect of Systematic Changes of Ti and Hf Si-oxynitride Alloys by Nitrogen Incorporation as a Bond Constraint on Electrical and Material Properties.

Sanghyun Lee 1 , Gerry Lucovsky 1 2 , L. Fleming 2 , Jan Luning 3
1 Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina, United States, 2 Department of Physics, North Carolina State University, Raleigh, North Carolina, United States, 3 Stanford Synchrotron Radiation Labs, Stanford University, Menlo Park, California, United States

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10:45 AM - H3.5
Negative Bias Stressing Interface Trapping Centers in Metal Gate Hafnium Oxide Field Effect Transistors Using Spin Dependent Recombination.

Corey Cochrane 1 , Patrick Lenahan 1 , Gennadi Bersuker 2 , Arnost Neugroschel 3
1 , The Pennsylvania State University, University Park, Pennsylvania, United States, 2 , SEMATECH, Austin, Texas, United States, 3 , University of Florida, Gainsville, Florida, United States

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11:00 AM -
BREAK

11:30 AM - **H3.6
Atomic Layer Deposition of High-k Gate Dielectrics onto Si, Ge, and III-V Semiconductors: Interface Chemistry.

Martin Frank 1
1 , IBM T.J. Watson Research Center, Yorktown Heights, New York, United States

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12:00 PM - H3.7
Texture and Crystallinity Development in Ultra-thin HfO2 Films Studied by Electron Microscopy.

Fakhruddin Bohra 1 2 , Bin Jiang 1 2 , Kevin Johnson 3 , Zhiyong Ma 3 , Jian-Min Zuo 1 2
1 Materials Science and Engineering, UIUC, Urbana, Illinois, United States, 2 Frederick-Seitz Materials Research Laboratory, UIUC, Urbana, Illinois, United States, 3 , Intel Corporation, Hillsboro, Oregon, United States

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12:15 PM - H3.8
Study of Pt/ Epitaxial Gd2O3 /Si Stacks.

E. Lipp 1 , M. Eizenberg 1 , M. Czernohorsky 2 , H. Osten 2
1 Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa Israel, 2 Institute of Electronic Materials and Devices, Leibniz University of Hannover, Hannover Germany

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12:30 PM - H3.9
Nucleation studies of HfO2 thin films produced by Atomic Layer Deposition

Justin Hackley 1 , John Demaree 2 , Theodosia Gougousi 1
1 Department of Physics, UMBC, Baltimore , Maryland, United States, 2 Weapons & Materials Research Directorate, Army Research Laboratory, Aberdeen Proving Ground, Maryland, United States

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H4: High-k Interfaces: High Mobility Substrates and Metal Electrodes
Session Chairs
D. Muller
J. Robertson
Wednesday PM, April 11, 2007
Room 3007 (Moscone West)

2:30 PM - **H4.1
Atomic-layer-deposition Grown Al2O3 on III-V Compound Semiconductors - Surface Passivation and Energy-band Parameters.

M. Huang 1 3 , Y. Chang 1 , C. Chang 1 , Y. Lee 1 , T. Lin 1 , P. Chang 1 , T. Wu 1 , J. Kwo 2 , M. Hong 1
1 Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu Taiwan, 3 Research Division, National Synchrotron Radiation Res. Ctr., Hsinchu Taiwan, 2 Department of Physics, National Tsing Hua University, Hsinchu Taiwan

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3:00 PM - H4.2
Influences of Plasma Processed Interface Layers on Germanium MOS Devices with ALD Grown HfO2.

Takuya Sugawara 1 2 , Raghavasimhan Sreenivasan 2 , Yasuhiro Oshima 3 2 , Paul McIntyre 2
1 Leading-edge Process Development Center, Tokyo Electron Ltd., Nirasaki, Yamanashi, Japan, 2 Dept. of Materials Science and Engineering, Stanford University, Stanford, California, United States, 3 Development and Planning Department, Tokyo Electron America, Santa Clara, California, United States

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3:15 PM - H4.3
Interface Analysis Between ALD high-κ HfO2 and Sulfur Passivated GaAs.

Po-Ta Chen 1 , Yun Sun 2 , Chi On Chui 3 , Eunji Kim 1 , Michael Garner 3 , Piero Pianetta 2 4 , Niti Geol 3 , Wilman Tsai 3 , Paul McIntyre 1 , Yoshio Nishi 4
1 Materials Science and Engineering, Stanford University, Stanford, California, United States, 2 Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center, Menlo Park, California, United States, 3 , Intel Corp., Santa Clara, California, United States, 4 Electrical Engineering, Stanford University, Stanford, California, United States

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3:30 PM - H4.4
Characteristics of HfN/HfO2 Gate Stacks deposited by Remote Plasma Atomic Layer Deposition Method

Keunwoo Lee 1 , Seungho Lee 1 , Keunjun Kim 1 , Wooho Jeong 1 , Taeyong Park 1 , Hyeongtag Jeon 1
1 Division of Materials Science and Engineering, Hanyang University, Seoul Korea (the Republic of)

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3:45 PM -
BREAK

4:15 PM - H4.5
Characterization of Interfacial Stability by Differential Scanning Nano-calorimetry.

Lawrence Cook 1 , Richard Cavicchi 1 , Mark Vaudin 1 , Christopher Montgomery 1 , William Egelhoff 1 , Nabil Bassim 1 , Martin Green 1
1 , NIST, Gaithersburg, Maryland, United States

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4:30 PM - H4.6
Improving the Electrical Properties of TiN/HfSiO Gate Stacks using the PVD-based In-situ Fabrication Method

Naomu Kitano 1 2 , Shinya Horie 2 , Takashi Minami 1 , Motomu Kosuda 1 , Takayoshi Shimura 2 , Kenji Shiraishi 3 , Heiji Watanabe 2
1 , Canon ANELVA Corp., Tokyo Japan, 2 Graduate School of Engineering, Osaka University, Osaka Japan, 3 Graduae School of Pure and Applied Physics, University of Tsukuba, Ibaraki Japan

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4:45 PM - H4.7
Si-based Resonant Tunneling Devices (RTD) using UHV wafer Bonding

Taehun Lee 1 , M. Kim 1 , J. Kim 1 , R. Wallace 1 , B. Gnade 1
1 EE, University of Texas at Dallas, Richardson, Texas, United States

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5:00 PM - H4.8
Metal-HfO2 Interfaces and Work Function Control.

Koon-yiu Tse 1 , John Robertson 1
1 Engineering, Cambridge University, Cambridge United Kingdom

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5:15 PM - H4.9
Systematic Study on Effective Work Function Instability of Metal/High-k Gate Stacks

Yuki Kita 1 , Shiniti Yoshida 1 , Takayoshi Shimura 1 , Kiyoshi Yasutake 1 , Heiji Watanabe 1 , Kenji Shiraishi 2 , Yasuo Nara 3 , Keisaku Yamada 4
1 Graduate School of Engineering, Osaka University, Osaka Japan, 2 Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba Japan, 3 , Semiconductor Leading Edhe Technologies, Inc. (SELETE), Tsukuba Japan, 4 Nano Technology Research Laboratory, Waseda University, Tokyo Japan

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5:30 PM - H4.10
Work Function Extraction from TayAl1-yNx Composition Spreads on HfO2 using Combinatorial Methodologies for the Advanced Gate Stack

Kao-shuo Chang 1 2 , Martin Green 1 , Nabil Bassim 1 , John Suehle 1 , Jason Hattrick-Simpers 2 , Ichiro Takeuchi 2 , Stefan De Gendt 3
1 Materials Science and Engineering, NIST, Gaithersburg, Maryland, United States, 2 Materials Science and Engineering, U. of Maryland, College Park, Maryland, United States, 3 , IMEC, Leuven Belgium

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H5: Poster Session: High-k Dielectrics/Semiconductor Interfaces
Session Chairs
Nicolas Richard
Wednesday PM, April 11, 2007
Salon Level (Marriott)

9:00 PM - H5.1
Microstructure and Electronic Structure Characterization of Interface Between the Hf-based high-K Thin Film and Si Using Spatially Resolved Electron Energy Loss Spectroscopy.

Quan Li 1
1 Physics, The Chinese University of Hong Kong, Hong Kong Hong Kong

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9:00 PM - H5.10
Effect of Oxidizer on Chemical Vapor Deposited Hafnium oxide-based Nanostructures and the Engineering of their Interfaces with Si(100).

Manish Singh 1 , Gregory Jurisch 2 , Christos Takoudis 3
1 Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois, United States, 2 , American Air Liquide, Countryside, Illinois, United States, 3 Departments of Chemical Engineering and Bioengineering, University of Illinois at Chicago, Chicago, Illinois, United States

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9:00 PM - H5.11
Electronic Structure and Thermal Stability of HfSiON Using a Direct Plasma Nitridation.

Kwun Bum Chung 1 , Chan Jung Lim 3 1 , Moon Hyoung Jang 2 1 , Dae-Hong Ko 3 , M. Cho 2
1 Advanced Analysis Group, Korea Research Institute of Standards and Science, Daejeon Korea (the Republic of), 3 Ceramic Engineering, Yonsei University, Seoul Korea (the Republic of), 2 Institute of Physics and Applied Physics, Yonsei University, Seoul Korea (the Republic of)

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9:00 PM - H5.12
Electronic Structure and Defects in Al2O3 Gate Oxides.

Dameng Liu 1 , Koon-yiu Tse 1 , John Robertson 1
1 Engineering, Cambridge University, Cambridge United Kingdom

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9:00 PM - H5.13
IBA of Ordered Ultra-thin SiO2 Grown on (1x1) Si(100).

Nicole Herbots 1 , James Bradley 1 , Robert Culbertson 1 , Justin Shaw 2 , Vasu Atluri 3
1 Physics, Arizona State University, Tempe, Arizona, United States, 2 Magnetics Group, NIST, Boulder, Colorado, United States, 3 , Intel Corp., Chandler, Arizona, United States

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9:00 PM - H5.14
A New 3D Multistring Code to Identify Compound Oxide Nanophase With Ion Channeling.

Nicole Herbots 1 , James Bradley 1 , Robert Culbertson 1 , Justin Shaw 2 , Vasu Atluri 3
1 Physics, Arizona State University, Tempe, Arizona, United States, 2 Magnetics Group, NIST, Boulder, Colorado, United States, 3 , Intel Corp., Chandler, Arizona, United States

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9:00 PM - H5.16
Chemistry and Electronics of CH3-Ge(111).

David Knapp 1 , Nathan Lewis 1
1 Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California, United States

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9:00 PM - H5.17
Structural Properties and Electrical Performance of La2Hf2O7 on Si.

Monica Sawkar-Mathur 1 , Jane Chang 1
1 Chemical Engineering, UCLA, Los Angeles, California, United States

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9:00 PM - H5.19
Material and Electrical Properties of HfRuN Gate Electrodes on HfO2.

Monica Sawkar-Mathur 1 , Jane Chang 1
1 Chemical Engineering, UCLA, Los Angeles, California, United States

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9:00 PM - H5.2
Comparisons of Physical and Electrical Characteristics of Laser-MBE Fabricated HfSiO versus HfSiON Dielectrics

Yuekang Lu 1 , Weiguang Zhu 1 , R. Gopalkrishnan 2
1 School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore Singapore, 2 , Institute of Microelectronics, Singapore Singapore

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9:00 PM - H5.20
Evaluation of Plasma Nitridation (PN) with Low Electron Temperature for the DRAM application.

Hyo-jung Kim 1 , Woo-jun Lee 1 , Sung-kwan Kang 1 , Jae-young Park 1 , Han-jin Lim 1 , Seok-woo Nam 1 , Tae-hyuk Ahn 1 , Chang-lyong Song 1
1 NRD-PJT, Samsung electronics Co., Hwaseung-Si Korea (the Republic of)

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9:00 PM - H5.22
Gas Phase HF Etching of III-V Compound Semiconductors.

Fee Li Lie 1 , Anthony Muscat 1
1 Chemical and Environmental Engineering, University of Arizona, Tucson, Arizona, United States

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9:00 PM - H5.23
Al-Oxynitride Buffer Layer Facilities for PrOX/SiC Interfaces.

Karsten Henkel 1 , Rakesh Sohal 1 , Carola Schwiertz 1 , Yevgen Burkov 1 , Dieter Schmeisser 1
1 Angewandte Physik-Sensorik, BTU Cottbus, Cottbus, Brandenburg, Germany

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9:00 PM - H5.24
Metal Electrode Dependent Interface States of HfO2 Film on Si and Ge Substrates.

In-Sung Park 1 , Sunwoo Lee 2 , Sang Seol Lee 2 , Jungho Park 2 , JinHo Ahn 2
1 Information Display Research Institute, Hanyang Univeristy, Seoul Korea (the Republic of), 2 Department of Materials Science and Engineering, Hanyang University, Seoul Korea (the Republic of)

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9:00 PM - H5.25
Surface Preparation of Germanium using Reactive Gas Phases

Shariq Siddiqui 1 , Anthony Muscat 1
1 Department of Chemical and Environmental Engineering, University of Arizona, Tucson, Arizona, United States

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9:00 PM - H5.27
Investigation of Local Coordination and Electronic Structure of Dielectric Thin Films from Theoretical Energy-loss Spectra.

Manish Singh 1 , Javier Rosado 2 , Ramarajesh Katamreddy 1 , Anand Deshpande 1 , Christos Takoudis 3
1 Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois, United States, 2 , Air Products and Chemicals, Inc., Allentown, Pennsylvania, United States, 3 Departments of Chemical Engineering and Bioengineering, University of Illinois at Chicago, Chicago, Illinois, United States

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9:00 PM - H5.28
Structure and Diffusion of Excess Silicon in Amorphous Silica: First Principles Studies.

Chin-lung Kuo 1 , Sangheon Lee 1 , Gyeong Hwang 1
1 Chemical Engineering, The University of Texas at Austin, Austin, Texas, United States

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9:00 PM - H5.29
Microstructure Evolution in Yttria-doped Zirconia Thin Films Grown on High-mobility Semiconductor Substrates.

Masaru Tsuchiya 1 , Andrew Minor 2 , Shriram Ramanathan 1
1 Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts, United States, 2 National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, California, United States

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9:00 PM - H5.3
Electron-Stimulated Desorption of H / D from Silicon Surface with Homogeneous Electron Injection

Toshiki Mori 1 , Satoru Watanabe 1
1 , Fujitsu Laboratories Ltd., Morinosato-Wakamiya, Atsugi, Kanagawa Japan

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9:00 PM - H5.30
Rare-earth Based Pseudobinary High-k Dielectric.

Peter Darmawan 1 , Jin Shun Teh 1 , Pooi See Lee 1
1 School of Materials Science and Engineering, Materials Technology, Nanyang Technological University, Singapore Singapore

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9:00 PM - H5.31
Surface Reconstruction Dependence and Annealing of Amorphous Lanthanum Aluminate on GaAs.

Donghun Choi 1 , Maitri Warusawithana 3 , Chi On Chui 2 , Niti Goel 2 , Wilman Tsai 2 , Darrell Schlom 3 , James Harris 1
1 Electrical Engineering, Stanford University, Stanford, California, United States, 3 Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania, United States, 2 , Intel Corporation, Santa Clara, California, United States

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9:00 PM - H5.35
Formation of Low-leakage-current Ultra-thin SiO2 Films Using Low-temperature Neutral Beam Oxidation

Toru Ikoma 1 , Seiichi Fukuda 1 , Kazuhiko Endo 2 , Heiji Watanabe 3 , Seiji Samukawa 1
1 Institute of Fluid Science, Tohoku University, Sendai, Miyagi, Japan, 2 , National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan, 3 Graduate School of Engineering, Osaka University, Suita, Osaka, Japan

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9:00 PM - H5.36
Study of Atomic Layer Deposited Gadolinium Oxide Thin Films on Silicon.

Salvador Duenas 1 , Helena Castan 1 , Hector Garcia 1 , Luis Bailon 1 , Kaupo Kukli 2 3 , Timo Hatanpaa 3 , Mikko Ritala 3 , Markus Leskela 3
1 Electronica, Universidad De Valladolid, Valladolid, Valladolid, Spain, 2 , University of Tartu, Tartu Estonia, 3 Chemistry, University of Helsinki, Helsinki Finland

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9:00 PM - H5.37
Impact of Additives on the Microstructure of Hafnium-based High-k Dielectrics.

Richard Gregory 1 , Dina Triyoso 2 , Rama Hegde 2 , Jamie Schaeffer 2 , Peter Fejes 1 , Stefan Zollner 2 , Z. Yu 1 , Xiang-dong Wang 1
1 Wireless and Packaging Systems Laboratory - Technology Solutions Organization, Freescale Semiconductor, Inc., Tempe, Arizona, United States, 2 Austin Silicon Technology Solutions - Technology Solutions Organization, Freescale Semiconductor, Inc., Austin, Texas, United States

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9:00 PM - H5.4
Hydrogen Interaction with Point Defects in the Si-SiO2 System and its Influence on the Interface Properties.

Daniel Kropman 1
1 Department of Materials Science, Tallinn University of Technology, Tallinn Estonia

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9:00 PM - H5.5
Comparative Study of Diffusion of Defects and Impurities in HfO2.

Valerie Cuny 1 , Nicolas Richard 1 , Alain Esteve 2 , Mehdi Djafari Rouhani 2
1 , CEA-DIF, Bruyères-le-Châtel France, 2 Laboratoire d'Analyse et d'Architecture des Systèmes, CNRS, Toulouse France

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9:00 PM - H5.6
Design of Hafnium β-ketoiminato Precursors for the MOCVD of Hafnium Oxide Thin Films.

Bradley Fahlman 1 , Anne Germeroth 1
1 Department of Chemistry, Central Michigan University, Mount Pleasant, Michigan, United States

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9:00 PM - H5.7
Chemical Vapor Deposition of Hafnium and Zirconium Oxide Thin Films.

Bradley Fahlman 1 , Jason Macdonald 1
1 Department of Chemistry, Central Michigan University, Mount Pleasant, Michigan, United States

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9:00 PM - H5.8
Observation of an Interfacial Transition Layer in a Nano-scale SiO2 Layer on a Si Substrate by X-ray Reflectivity (XRR) Analysis.

Chang-Soo Kim 1 , Tae-Kyoung Koo 2 1 , Ji-Yeon Yun 2 1 , Byung-Sung Oh 2 , Young-Dae Choi 3
1 Div. Of Advanced Tech., Korea Research Institute of Standards and Science, Daejeon Korea (the Republic of), 2 Department of Physics, Chungnam University, Daejeon Korea (the Republic of), 3 Department of Optical and Electronic Physics, Mokwon University, Daejeon Korea (the Republic of)

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9:00 PM - H5.9
Synthesis and in situ Characterization of High-k Oxides by Remote Plasma ALD.

Erwin Kessels 1 , Hans Van Hemmen 1 , Wytze Keuning 1 , Erik Langereis 1 , Stephan Heil 1 , Johan Klootwijk 2 , Fred Roozeboom 3 , Chris Hodson 4 , Richard Van de Sanden 1
1 Dept. of Applied Physics, Eindhoven Univ. of Technology, Eindhoven Netherlands, 2 , Philips Research, Eindhoven Netherlands, 3 , NXP Semiconductors Research, Eindhoven Netherlands, 4 , Oxford Instruments Plasma Technology, Yatton United Kingdom

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2007-04-12   Show All Abstracts

Symposium Organizers

Yves Chabal Rutgers University
Alain Esteve CNRS
Nicolas Richard Commissariat a l’Energie Atomique
Glen Wilk ASM America
H6: Complex and Crystalline Oxides
Session Chairs
E. Garfunkel
C. Musgrave
Thursday AM, April 12, 2007
Room 3007 (Moscone West)

9:30 AM - **H6.1
Atomic Scale Characterization of Complex Oxides on Silicon.

David Muller 1 , Lena Fitting Kourkoutis 1 , C. Hellberg 2 , V. Vaithyanathan 3 , Darrell Schlom 3 , K. Andersen 2
1 School of Applied and EngineeringPhysics, Cornell University, Ithaca, New York, United States, 2 Center for Computational Materials Science, Naval Research Laboratory , Washington, District of Columbia, United States, 3 Dept. of Materials Science and Engineering, Penn State University, State College, Pennsylvania, United States

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10:00 AM - H6.2
Preparation and Characterization of MOSFETs with Gadolinium Scandate as Alternative Gate Dielectric.

Martin Roeckerath 1 , Joachim Knoch 1 , Tassilo Heeg 1 , Juergen Schubert 1 , Siegfried Mantl 1
1 Institute of Bio- and Nanosystems (IBN 1), Research Centre Juelich, Juelich, NRW, Germany

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10:15 AM - H6.3
Surprises in the Growth of SrTiO3 on Silicon: A Charged Interface and Polar Film.

C. Hellberg 1 , Kristopher Andersen 1 , Joseph Woicik 2 , P. Ryan 3 , Hao Li 4 , Lena Fitting 5 , David Muller 5 , V. Vaithyanathan 6 , Darrell Schlom 6
1 , Naval Research Lab, Washington, District of Columbia, United States, 2 , NIST, Gaithersburg, Maryland, United States, 3 , Ames Laboratory, Ames, Iowa, United States, 4 , Motorola Labs, Tempe, Arizona, United States, 5 , Cornell University, Ithaca, New York, United States, 6 , Pennsylvania State University, University Park, Pennsylvania, United States

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10:30 AM - H6.4
Interface Control in High-k stacks on Semiconductors Grown by Molecular Beam Epitaxy.

Chiara Marchiori 1 , Daniele Caimi 1 , Roland Germann 1 , Jean-Pierre Locquet 1 , Bogdan Mereu 1 , Christophe Rossel 1 , Maryline Sousa 1 , Axelle Tapponnier 1 , Dave Webb 1 , Maria Seo 2 , Jean Fompeyrine 1
1 , IBM Research Lab Zurich, Rueschlikon Switzerland, 2 IPMC, Ecole Polytechnique Fédérale de Lausanne, Ecublens Switzerland

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10:45 AM - **H6.5
Theory of Nonlinear Dielectric Response of Perovskite Superlattices and Interfaces.

David Vanderbilt 1
1 Physics and Astronomy, Rutgers University, Piscataway, New Jersey, United States

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11:15 AM -
BREAK

11:30 AM - **H6.6
Growth and Characterization of Epitaxial LaxLu2-xO3 Films on (111) Si.

Darrell Schlom 1 , Wei Tian 1 , Lisa Edge 1 , D. Klenov 2 , S. Stemmer 2 , J. Wang 3 , M. Kim 3 , V. Afanas'ev 4 , S. Stesmans 4 , S. Shamuilia 4 , B. Hollaender 5 , J. Schubert 5 , M. Hawley 6 , S. Rivillon 7 , Y. Chabal 7
1 Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania, United States, 2 Materials Department, University of California, Santa Barbara, California, United States, 3 Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas, United States, 4 Department of Physics, University of Leuven, Celestijnenlaan Belgium, 5 Institute of Thin Films and Interfaces and Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, Jülich Germany, 6 Materials Science & Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico, United States, 7 Departments of Chemistry and Chemical Biology,, Biomedical Engineering and Physics, Rutgers University, Piscataway, New Jersey, United States

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12:00 PM - H6.7
Structual and Electrical Properties of Crystalline LaAlO3 on Silicon (001)

James Reiner 1 , Agham Posadas 1 , Miaomiao Wang 2 , Tso-Ping Ma 2 , Charles Ahn 1
1 Applied Physics, Yale University, New Haven, Connecticut, United States, 2 Electrical Engineering, Yale University, New Haven, Connecticut, United States

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12:15 PM - H6.8
Amorphous Lanthanum Lutetium oxide Thin Films as an Alternative High-κ gate Dielectric.

Joao Lopes 1 , Martin Roeckerath 1 , Tassilo Heeg 1 , Jurgen Schubert 1 , Uffe Littmark 1 , Siegfried Mantl 1 , Valeri Afanas'ev 2 , Sheron Shamuilia 2 , Andre Stesmans 2 , Y. Jia 3 , Darrel Schlom 3
1 Institute for Bio- und Nanosystems, Forschungszentrum Juelich GmbH, Juelich Germany, 2 Department of Physics, University of Leuven, Leuven Belgium, 3 Department of Materials Science and Engineering, Pennsylvania State University, Pennsylvania , Pennsylvania, United States

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12:30 PM - H6.9
Defects in La and Hf Gate Oxides.

Koon-yiu Tse 1 , Dameng Liu 1 , Ka Xiong 1 , John Robertson 1
1 Engineering, Cambridge University, Cambridge United Kingdom

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H7: High-k/Semiconductor Interfaces II, SiC, Electrical Characterization
Session Chairs
Dina Triyoso
Glen Wilk
Thursday PM, April 12, 2007
Room 3007 (Moscone West)

2:30 PM - **H7.1
Compositional and Band Alignment Characterization in CMOS Gate Stacks.

L. Goncharova 1 , S. Rangan 1 , E. Bersch 1 , O. Celik 1 , T. Feng 1 , S. Sayan 1 , C. Hsueh 1 , Y. Chabal 1 , T. Gustafsson 1 , R. Bartynski 1 , E. Garfunkel 1
1 , Rutgers University, Piscataway, New Jersey, United States

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3:00 PM - H7.2
Characteristics of Hafnium-based Gate Dielectrics Depending on the Silicon Content.

Sanghyun Woo 1 , Seokhoon Kim 1 , Hyungseok Hong 1 , Hyungchul Kim 1 , Hyeongtag Jeon 1
1 Materials Science and Engineering, Hanyang University, Seoul Korea (the Republic of)

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3:15 PM - H7.3
Roles of Oxygen and Water Vapor in the Oxidation of Halogen and Hydrogen Terminated Ge(111) Surfaces.

Shiyu Sun 1 2 , Yun Sun 2 , Zhi Liu 2 , Piero Pianetta 2
1 Physics, Stanford University, Palo Alto, California, United States, 2 , Stanford Synchrotron Radiation Laboratory, Menlo Park, California, United States

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3:30 PM - H7.4
In-situ Infrared Absorption Monitoring of Atomic Layer Deposition of Metal Oxides on Functionalized Si and Ge Surfaces.

Min Dai 2 1 , Ming-Tsung Ho 2 1 , Yu Wang 1 2 , Sandrine Rivillon 3 1 , Meng Li 2 1 , Jinhee Kwon 2 , Yves Chabal 1 3 2
2 Department of Physics, Rutgers University, Piscataway, New Jersey, United States, 1 Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey, United States, 3 Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, New Jersey, United States

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3:45 PM - H7.5
X-Ray Reflectometry Determination of Structural Information from Atomic Layer Deposition, Nanometer-scale, Hafnium Oxide Thin Films.

Donald Windover 1 , Nicholas Armstrong 1 2 , James Cline 1
1 Ceramics Division, NIST, Gaithersburg, Maryland, United States, 2 Department of Physics and Advanced Materials, UTS, Sydney, New South Wales, Australia

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4:00 PM -
BREAK

4:30 PM - H7.6
Atomic-scale Characterization of HF-treated 4H-SiC(0001)1×1 Surfaces by Scanning Tunneling Microscopy.

Kenta Arima 1 , Hideyuki Hara 1 , Keita Yagi 2 , Ryota Okamoto 2 , Hidekazu Mimura 1 , Akihisa Kubota 3 , Kazuto Yamauchi 1
1 Department of Precision Science and Technology, Osaka University, Suita, Osaka, Japan, 2 Research Center for Ultra-Precision Science and Technology, Osaka University, Suita, Osaka, Japan, 3 Department of Mechanical Engineering and Materials Science, Kumamoto University, Kumamoto, Kumamoto, Japan

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4:45 PM - H7.7
Investigation of 4H-SiC MIS Devices with AlON/SiO2 Layered Structures.

Makoto Harada 1 , Yu Watanabe 1 , Shgenari Okada 1 , Takayoshi Shimura 1 , Kiyoshi Yasutake 1 , Heiji Watanabe 1
1 , Osaka University, Suita-shi, Osaka, Japan

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5:00 PM - H7.8
Impact of Interfacial Nitridation of HfO2 High-k Gate Dielectric Stack on 4H-SiC

Rajat Mahapatra 1 , Amit Chakraborty 2 , Bing Miao 1 , Alton Horsfall 1 , Sanatan Chattopadhyay 1 , Nick Wright 1 , Karl Coleman 2
1 School of Electrical, Electronic and Computer Engineering, Newcastle University, Newcastle United Kingdom, 2 Department of Chemistry, University of Durham, Durham United Kingdom

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5:15 PM - H7.9
Engineering of Epitaxial γ-Al2O3 (111) Gate Dielectrics on 4H-SiC (0001)

Carey Tanner 1 , Monica Sawkar-Mathur 1 , Jun Lu 2 , Hans-Olof Blom 2 , Michael Toney 3 , Jane Chang 1
1 Chemical and Biomolecular Engineering, University of California Los Angeles, Los Angeles, California, United States, 2 Angstrom Laboratory, Uppsala University, Uppsala Sweden, 3 Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center, Menlo Park, California, United States

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5:30 PM - H7.10
Controllability of Flatband Voltage in Metal/High-k Gate Stack Structures.

Kenji Ohmori 1 , Parhat Ahmet 2 , Kuniyki Kakushima 2 , Hideki Yoshikawa 1 , Kenji Shiraishi 3 , Naoto Umezawa 1 , Kiyomi Nakajima 1 , Michiko Yoshitake 1 , Keishuke Kobayashi 1 , Kikuo Yamabe 3 , Heiji Watanabe 4 , Yasuo Nara 5 , Takashi Nakayama 6 , Martin Green 7 , Hiroshi Iwai 2 , Keisaku Yamada 8 , Toyohiro Chikyow 1
1 Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki, Japan, 2 , Tokyo Institute of Technology, Yokohama Japan, 3 , University of Tsukuba, Tsukuba Japan, 4 , Osaka University, Osaka Japan, 5 , Semiconductor Leading Edge Technologies, Tsukuba Japan, 6 , Chiba University, Chiba Japan, 7 , National Institute of Standards and Technology, Gaithersburg, Maryland, United States, 8 , Waseda University, Shinjuku, Tokyo, Japan

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5:45 PM - H7.11
Electrical Characterization of High-k Dielectrics by Means of Flat-Band Voltage Transient Recording.

Salvador Duenas 1 , Helena Castan 1 , Hector Garcia 1 , Luis Bailon 1 , Kaupo Kukli 2 3 , Mikko Ritala 3 , Markus Leskela 3
1 Electronica, Universidad De Valladolid, Valladolid, Valladolid, Spain, 2 , Institute of Experimental Physics and Technology, Univ. Tartu, Tartu Estonia, 3 Chemistry, Univ. Helsinki, Helsinki Finland

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