Available on-demand - F.EL03.06.12
ALD of MoSe2 Using New Precursors
Raul Zazpe1,2,Richard Krumpolec3,Jaroslav Charvot4,Ludek Hromadko1,2,Hanna Sopha1,2,Martin Motola1,David Pavlinak3,Milos Krbal1,Filip Bures4,Jan Macak1,2
Center of Materials and Nanotechnologies, Faculty of Chemical Technology, University of Pardubice1,Central European Institute of Technology, Brno University of Technology2,R & D Center for Low-Cost Plasma and Nanotechnology Surface Modifications, Department of Physical Electronics, Faculty of Science, Masaryk University3,Institute of Organic Chemistry and Technology, Faculty of Chemical Technology,University of Pardubice4
2D semiconductor transition metal dichalcogenides (TMDs) have attracted considerable attention due to their layered structure, suitable band gap for visible light absorption, high carrier mobility, electrochemically active unsaturated edges and relatively good stability against photocorrosion . Recently, 2D MoSe2 has been gaining considerable interest due to its higher electrical conductivity as compared to MoS2, its wider inter-layer distance (~0.65 nm), narrow bandgap (1.33–1.72 eV), high resistance to photo-corrosion, high surface area layer, electrochemically active unsaturated Se-edges and close to zero Gibbs free energy edges for hydrogen adsorption.These properties are promising for different applications of MoSe2 including hydrogen evolution , photocatalysis  and Li-ion batteries . However, their low light absorption efficiency, recombination issues of the photogenerated electron–hole pairs and slow charge transfer of the intrinsic semiconducting 2H-phase are a handicap. An efficient strategy to surpass those intrinsic limitations are hybrid nanostructures using conducting supporting materials. In this regard, anodic TiO2 nanotubes (TNTs) are excellent photoactive supporting material providing a high surface area, unique directionality for the charge separation, and highly effective charge collection . Accordingly, we present anodic TiO2 nanotubes homogenously decorated with MoSe2 nanosheets by atomic layer deposition (ALD). In parallel, we address the current scarcity of convenient ALD Se precursors by the synthesis a set of new selenium precursors - alkysilyl (R3Si)2Se and alkytin (R3Sn)2Se, and cyclic silylselenides compounds. Those Se precursors were extensicely characterized and their reliability as ALD Se precursors explored [6,7]. Several compounds exhibited promising results to be convenient ALD Se precursor as will be presented in the presentation. The synthesis of the MoSe2 nanosheets and their composites with TiO2 NTs, their physical and electrochemical characterization, and encouraging results in electrochemical characterization, hydrogen evolution reaction (HER) and photocatalysis will be presented and discussed.
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