Available on-demand - *S.NM09.09.05
Novel Infrared Photodetectors Based on Layered van der Waals Heterostructures
Weida Hu1,Jinshui Miao1,Fang Wang1,Peng Wang1
Chinese Academy of Sciences1
Infrared photodetectors based on traditional thin-film semiconductors such as InGaAs, InSb, HgCdTe, Si BIB, and QWIP as well as novel type-II superlattice exhibit highly sensitive detection capability. However, these devices always need to work at low temperature, resulting in an additional large and expensive cooling system. Recently, two dimensional (2D) materials and their van der Waals heterostructures have attracted tremendous attention owing to their optoelectronic tunability and potential optoelectronic applications. Nevertheless, as a photoconductive detector, the signal-to-noise ratio could be very low without the suppression of dark current. Meanwhile, the performance of the photodetectors, which are based on 2D materials and layered van der Waals Heterostructures, including phototransistors, photoconductors with photogating, and photodiodes, is strongly affected by surface/interface and in-plane trap states resulting in the restricted electron-hole separation efficiency and low speed, and intrinsic ultrathin absorption thickness for 2D photodetectors suffers the low quantum efficiency.
Here we report the progress on novel uncooled infrared photodetectors based on 2D materials and their van der Waals heterostructures manipulated by localized fields. We fully exploit the detection ability of 2D materials and their van der Waals heterostructures by introducing localized-field, including ferroelectric filed, vertical heterojunction field, p-n junction photovoltaic field and so forth. With a strong induced localized-field, high performance infrared photodetectors based on Graphene, TMDs, Pd (Pt) Se, Black phosphorus, Black arsenic-phosphorus etc. may lead to a disruptive revolution in prospective low dimensional electronic/optoelectronic devices. Our study opens a new avenue for the controllable fabrication of built-in localized-field in 2D devices, which is a prominent challenge in low dimensional material researches.
Feng Wu, Qing Li, Peng Wang*, Hui Xia, Zhen Wang, Yang Wang, Man Luo, Long Chen, Fansheng Chen, Jinshui Miao, Xiaoshuang Chen, Wei Lu, Chongxin Shan, Anlian Pan, Xing Wu*, Wencai Ren, Deep Jariwala and Weida Hu*, High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region, Nature Communications, 10, 4664 (2019).
Invited Review: Mingsheng Long, Peng Wang, Hehai Fang, and Weida Hu*, Progress, Challenges, and Opportunities for 2D Material Based Photodetectors, Advanced Functional Materials 29 (19), 1803807 (2019).
Invited Review: Peng Wang, Hui Xia, Qing Li, Fang Wang*, Lili Zhang, Tianxin Li*, Piotr Martyniuk, Antoni Rogalski, and Weida Hu*, Sensing infrared photons at room temperature: from bulk materials to atomic layers Small, 1904396 (2019) DOI: 10.1002/smll.201904396
Mingsheng Long, Anyuan Gao, Peng Wang, Hui Xia, Claudia Ott, Chen Pan, Yajun Fu, Erfu Liu, Xiaoshuang Chen, Wei Lu, Tom Nilges, Jianbin Xu, Xiaomu Wang*, Weida Hu*, Feng Miao*, Room-temperature high detectivity mid-infrared photodetectors based on black arsenic phosphorus Science Advances, 3, e1700589 (2017)
Mingsheng Long, Yang Wang, Peng Wang, Xiaohao Zhou, Hui Xia, Chen Luo, Shenyang Huang, Guowei Zhang, Hugen Yan, Zhiyong Fan, Xing Wu*, Xiaoshuang Chen*, Wei Lu, Weida Hu*, Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability ACS Nano, 13, 2511–2519 (2019).
Peng Wang, Shanshan Liu, Wenjin Luo, Hehai Fang, Fan Gong, Nan Guo, Zhi-Gang Chen, Jin Zou, Yan Huang, Xiaohao Zhou, Jianlu Wang, Xiaoshuang Chen*, Wei Lu, Faxian Xiu*, and Weida Hu*, Arrayed van der Waals Broadband detectors for Dual band detectio, Advanced Materials, 29, 1604439 (2017).
Xudong Wang, Peng Wang, Jianlu Wang*, Weida Hu*, Xiaohao Zhou, Nan Guo, Hai Huang, Shuo Sun, Hong Shen, Tie Lin, Minghua Tang, Lei Liao, Anquan Jiang, Jinglan Sun, Xiangjian Meng, Xiaoshuang Chen, Wei Lu, and Junhao Chu, Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics Advanced Materials, 27, 6575–6581 (2015).