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Symposium EL01-Phase-Change Materials for Emerging Applications in Reconfigurable Devices, Memory and Computing

Phase-change materials (PCMs), such as chalcogenides alloys (GeTe, Ge2Sb2Te5, AgInSbTe, GeSbSe, etc.), and VO2, have recently emerged as a promising platform to control both nanoscale electronic and photonic devices on-chip due to their fast, dramatic, and reversible change in electrical and optical properties. Since their initial demonstration, significant technical progress in the field of both electrical and optical PCMs has been achieved in terms of finding new alloys with superior switching speeds, optical transparency, opto-electronic control, and large-scale electronic and photonic integration. These advances have led to exciting applications ranging from reconfigurable RF and photonic switches, ovonic threshold selectors, tunable optical metasurfaces, and highly efficient in-memory computing.

With the growing academic and industrial interest in these unique materials, it is crucial to understand both the advantages and challenges of PCMs to inform future research in this field. Further work is needed at the materials, device, and systems levels to address current challenges such as integrating emerging PCMs into the foundry process flow, optimizing multilevel reliability for in-memory computing applications, and improving large area switching endurance for both RF and photonic devices. Presenters and invited speakers will represent a broad range of disciplines from chemistry, physics, engineering, and materials science to encourage fertile cross-cutting discussions.



Topics will include:

  • Application of phase change materials to PCRAM devices and optical storage
  • Phase-change materials in reconfigurable photonic memories, logic and displays applications
  • Neuromorphic and in-memory computing with phase change memory devices
  • Integration of phase-change materials into hybrid nanostructures
  • Concepts and enabling technologies for 3D memory, OTS devices, RF Switches
  • Processing and reliability issues in device fabrication and integration
  • Theory and computer simulations of structural, electronic, and optical processes in phase change materials
  • Physical properties of chalcogenide phase change materials
  • A tutorial complementing this symposium is tentatively planned.

Invited Speakers:

  • Marco Bernasconi (Università degli Studi di Milano-Bicocca, Italy)
  • Harish Bhaskaran (University of Oxford, United Kingdom)
  • Massimo Borghi (STMicroelectronics, Italy)
  • Valeria Bragaglia (IBM Research-Zurich, Switzerland)
  • Huai-Yu (Michelle) Cheng (Macronix International Co., LTD, USA)
  • Zengguang Cheng (Fudan University, China)
  • Bart Kooi (University of Groningen, Netherlands)
  • Andriy Lotnyk (Leibniz Institute of Surface Engineering, Germany)
  • Anbarasu Manivannan (Indian Institute of Technology Madras, India)
  • Stephan Menzel (IBM Research-Zurich, Germany)
  • Pierre Noe (Commissariat à l’énergie atomique et aux énergies alternatives, France)
  • Wolfram Pernice (Universität Münster, Germany)
  • Timothy Philips (IBM Research-Albany, USA)
  • Eric Pop (Stanford University, USA)
  • Mina Rais-Zadeh (University of Michigan, USA)
  • Innocenzo Tortorelli (Micron, Italy)
  • Sharon Weiss (Vanderbilt University, USA)
  • Nathan Youngblood (University of Pittsburgh, USA)
  • Wei Zhang (Xi'an Jiaotong University, China)

Symposium Organizers

Ghazi Sarwat Syed
IBM Research-Zurich
Switzerland
No Phone for Symposium Organizer Provided , ghs@zurich.ibm.com

Carlos A Rios-Ocampo
University of Maryland
USA
No Phone for Symposium Organizer Provided , riosc@umd.edu

Stefania Privitera
Institute for Microelectronics and Microsystems (IMM)
National Research Council (CNR)
Italy

Matthias Wuttig
RWTH Aachen University
Germany
No Phone for Symposium Organizer Provided , wuttig@physik.rwth-aachen.de

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