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Symposium QT05—2D Topological Materials—Growth, Theoretical Models and Applications

2D Topological materials are a new class of materials that can, thanks to their extraordinary properties, project us in the Beyond CMOS world. The symposium will cover the growth, the theoretical models on physics and the applications for 2D topological materials. The first part will focus on the growth of 2D materials. The growth of the new generation of 2D topological materials such as Stanene, Plumbene, Bismuthene or Tellurene will be presented and will have an important place. We will highlight the issues concerning the capacity to obtain layers that do not react with ambient environment using opportune protection without changing the layer properties and on their functionalization for band gap engineering. The second part of the symposium will deal with the theoretical models explaining the topological behavior. A part will be devoted to the way and the conditions for the Quantum Spin Hall effect (QSH) to take place in 2D Topological insulators. Theoretical models that will link the QSH with other properties, such as ZT (figure of merit) for Thermoelectrics (TE) materials will be highlighted. The way to decouple phonon and charge in these materials exploiting functionalization or adding defects will be pointed out in this session. In the third part of the symposium, first applications of these materials will be presented. 2D topological materials can be a game changer in different fields such as TE with large ZT (i.e. avionics, space, energy consumption reduction in new intelligent buildings), new forms of quantum computing/memories at subatomic level and beyond CMOS electronics exploiting spin transport with very low energy consumption. Abstract for applications in these fields will be strongly solicited.

Topics will include:

  • Growth of 2D topological materials
  • Ambient stability of 2D topological materials
  • Surface funcionalisation
  • Theoretical modelling of 2D topological materials
  • Quantum transport
  • Thermoelectric properties and devices
  • Sub-atomic quantum computing based on 2D materials
  • Beyond CMOS electronics based on 2D materials
  • Phase transitions in 2D topological materials
  • Quantum based metrology
  • A tutorial complementing this symposium is tentatively planned.

Invited Speakers:

  • Monica Allen (University of California, San Diego, USA)
  • Dimitri Basov (Columbia University, USA)
  • Kwabena Bediako (University of California, Berkeley, USA)
  • Bogdan Bernevig (Princeton University, USA)
  • Elisabeth Bianco (Cornell University, USA)
  • Jennifer Cano (Stony Brook University, The State University of New York, USA)
  • Ralph Claessen (Julius-Maximilians-Universität Würzburg, Germany)
  • Bruno Dlubak (Centre National de la Recherche Scientifique, France)
  • Claudia Felser (Max Planck Institute for Chemical Physics of Solids, Germany)
  • Benedetta Flebus (Boston College, USA)
  • M. Zahid Hasan (Princeton University, USA)
  • Thomas Heine (Technische Universität Dresden, Germany)
  • Anna Isaeva (Technische Universität Dresden, Germany)
  • Jinfeng Jia (Shanghai Jiao Tong University, China)
  • Nadya Mason (University of Illinois at Urbana-Champaign, USA)
  • Cecilia Mattevi (Imperial College London, United Kingdom)
  • Ingrid Mertig (Martin Luther University Halle-Wittenberg, Germany)
  • Laurens W. Molenkamp (Université de Groningen, Netherlands)
  • Alessandro Molle (Consiglio Nazionale delle Ricerche, Italy)
  • Amalia Patane (The University of Nottingham, United Kingdom)
  • Leslie Schoop (Princeton University, USA)
  • Pierre Seneor (Centre National de la Recherche Scientifique, France)
  • Qi-kun Xue (Tsinghua University, China)
  • Junji Yuhara (Nagoya University, Japan)

Symposium Organizers

Paolo Bondavalli
Thales Research and Technology
Nanomaterial Transverse Topic
France

Judy Cha
Cornell University
Materials Science and Engineering
USA

Adriana I. Figueroa
Catalan Institute of Nanoscience and Nanotechnology
Spain

Guy Lelay
Aix-Marseille Université
France

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