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Virtual Meeting Platform

Discrepancies may exist between the program on the Virtual Meeting Platform and this website. Please refer to the program below for the most updated session and presentation times. All times for May 23, 24 and 25 are shown in Eastern Daylight Time.

Symposium EQ01—Ultra-Wide Bandgap Materials and Devices

2022-05-09   Show All Abstracts

Times shown in HST (GMT-10:00)

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Srabanti Chowdhury, Stanford University
Yoshinao Kumagai, Tokyo University of Agriculture and Technology
Julien Pernot, University of Grenoble Alpes
EQ01.01: Computational Approaches to UWBGs
Session Chairs
Sukwon Choi
Monday AM, May 9, 2022
Hawai'i Convention Center, Level 3, 318B

10:30 AM - *EQ01.01.01
GW-BSE Workflows for High-Throughput Study of Ultra-Wide Band Gap Materials

Arunima Singh1

Arizona State University1

Show Abstract

11:00 AM - EQ01.01.02
Computational Discovery of Ultra-Wide Band Gap Semiconductors for Radio Frequency Applications

Emily McDonald1,2,Prashun Gorai1,2,Andriy Zakutayev2,1,Vladan Stevanovic1,2

Colorado School of Mines1,National Renewable Energy Laboratory2

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11:15 AM - EQ01.01.03
Discovering the Extreme Limits to Semiconductor Band Gaps

Sieun Chae1,Kelsey Mengle1,Kyle Bushick1,Nocona Sanders1,Nguyen Vu1,Jihang Lee1,Hanjong Paik2,John Heron1,Emmanouil Kioupakis1

University of Michigan1,Cornell University2

Show Abstract

11:30 AM - EQ01.01.04
Computational Fermi Level Engineering and Doping-Type Conversion of Ga2O3 via Three-Step Processing

Stephan Lany1,Anuj Goyal1,Andriy Zakutayev1,Vladan Stevanovic2

National Renewable Energy Laboratory1,Colorado School of Mines2

Show Abstract

EQ01.02: Thermal Aspects of UWBGs
Session Chairs
Robert Kaplar
Monday PM, May 9, 2022
Hawai'i Convention Center, Level 3, 318B

1:30 PM - *EQ01.02.01
Deep-Ultraviolet Thermoreflectance Imaging of Ultra-Wide Bandgap Semiconductor Devices

Sukwon Choi1

The Pennsylvania State University1

Show Abstract

2:00 PM - EQ01.02.02
Material Properties for High Thermal Interface Conductance

Samreen Khan1,Frank Angeles1,Wanyue Peng1,John Wright2,Saurabh Vishwakarma3,Debdeep Jena2,Huili Xing2,David Smith3,Richard Wilson1

University of California, Riverside1,Cornell University2,Arizona State University3

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2:15 PM - EQ01.02.03
Anisotropic Thermal Conductivity in Boron Doped Diamond

Frank Angeles1,Erick Guzman1,Fariborz Kargar1,Alexander Balandin1,Richard Wilson1,Timothy Grotjohn2

University of California, Riverside1,Michigan State University2

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EQ01.03: Poster Session: Ultra-Wide Bandgap Materials and Devices
Session Chairs
Robert Kaplar
Monday PM, May 9, 2022
Hawai'i Convention Center, Level 1, Kamehameha Exhibit Hall 2 & 3

5:00 PM - EQ01.03.01
Magneto-Optical Spectroscopy of Cr3+ and Red Emission in β-Ga2O3

Irina Buyanova1,J. E. Stehr1,M. Jansson1,D. M Hofmann2,Stephen Pearton3,Weimin Chen1

Linkoping University1,Justus-Liebig-University Giessen2,University of Florida3

Show Abstract

5:00 PM - EQ01.03.04
Effects of Electrical Characteristics on Undoped and Li-Doped NiO Interlayers Embedded Ni/β-Ga2O3 Schottky Barrier Diodes

Jiyoung Min1,Youseung Rim1

Sejong University1

Show Abstract

5:00 PM - EQ01.03.05
Cubic Boron Nitride’s High-Field Electron Transport

Stephen O'Leary1,Poppy Siddiqua1,Michael Shur2

University of British Columbia1,Rensselaer Polytechnic Institute2

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5:00 PM - EQ01.03.06
High Performance β-Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2

Ki-Tae Kim1,Seongil Im1

Yonsei University1

Show Abstract

5:00 PM - EQ01.03.07
An Ultrawide Bandgap Transparent Conductor for Deep Ultraviolet—A-Doped Sn1-xGexO2 Thin Films

Yo Nagashima1,Yasushi Hirose1,Masato Tsuchii1,Michitaka Fukumoto1,Yuki Sugisawa2,Daiichiro Sekiba2,Tetsuya Hasegawa1

The University of Tokyo1,University of Tsukuba2

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5:00 PM - EQ01.03.08
High Performance of MOCVD Grown β-Ga2O3 Based Solar-Blind Photodetectors for High Temperature Applications

Hardhyan Sheoran1,Shi Fang2,Fangzhou Liang2,Shuchi Kaushik1,Manikanthababu N.1,Haiding Sun2,Shibing Long2,Rajendra Singh1

Indian Institute of Technology Delhi1,, University of Science and Technology of China2

Show Abstract

5:00 PM - EQ01.03.09
Phase Engineering of Ga2O3 Hetero- and Homo- Epitaxial Growth by Mist Chemical Vapor Deposition

Joonhui Park1,Youseung Rim1

Sejong unviersity1

Show Abstract

5:00 PM - EQ01.03.10
Efficient Ultraviolet-C AlGaN Quantum-Well Light-Emitting Diodes Grown on Nano-Patterned Substrates

Sharif Sadaf1,Junjie Kang2,Omar Faruque1,Tashfiq Ahmed3,M Zunaid Baten3

Institut National de la Recherche Scientifique1,Songshan Lake Materials Laboratory, Dongguan China2,Bangladesh University of Engineering and Technology3

Show Abstract

5:00 PM - EQ01.03.12
Comparative Study in the Synthesis of Carbon Doped 2D Hexagonal Boron Nitride Films

Eoin O'Sullivan1,Chelsea Xia1,Dipankar Chugh2,Dillon McGurty1,Nicole Grobert1,Michael Johnston1,Chennupati Jagadish2

University of Oxford1,The Australian National University2

Show Abstract

2022-05-10   Show All Abstracts

Times shown in HST (GMT-10:00)

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Srabanti Chowdhury, Stanford University
Yoshinao Kumagai, Tokyo University of Agriculture and Technology
Julien Pernot, University of Grenoble Alpes
EQ01.04: Diamond I
Session Chairs
Timothy Grotjohn
Julien Pernot
Tuesday AM, May 10, 2022
Hawai'i Convention Center, Level 3, 318B

8:30 AM - *EQ01.04.01
Diamond and Ultra-Wide Bandgap Semiconductors for Power Electronics

Robert Nemanich1

Arizona State University1

Show Abstract

9:00 AM - *EQ01.04.02
Vertical Diamond p-FETs with Normally-Off Operation for Complementary High Power and High Speed Inverters

Hiroshi Kawarada1

Waseda University1

Show Abstract

9:30 AM - EQ01.04.03
Methane Influence on Diamond Schottky Barrier Diode Performance

Ken Haenen1,2,Rozita Rouzbahani1,2,Juliette Letellier3,Paulius Pobedinskas1,2,David Eon3,Julien Pernot3

Hasselt University1,IMEC vzw2,Université Grenoble Alpes, CNRS3

Show Abstract

9:45 AM - EQ01.04.04
Photo-Induced Phase Transition of Diamond—A Nonadiabatic Quantum Molecular Dynamics Study

Shogo Fukushima1,2,Rajiv Kalia1,Thomas Linker1,Ken-ichi Nomura1,Aiichiro Nakano1,Kohei Shimamura2,Fuyuki Shimojo2,Priya Vashishta1

University of South Carolina1,Kumamoto University2

Show Abstract

10:00 AM - EQ01.04
BREAK


10:30 AM - EQ01.04.06
Diamond FET Technology for Power Electronics

Etienne Gheeraert1,2

University Grenoble Alpes1,Centre National de la Recherche Scientifique2

Show Abstract

10:45 AM - EQ01.04.07
Polycrystalline Diamond Micro/Nano-Electro-Mechanical Systems

Oliver Williams1,Evan Thomas1,Soumen Mandal1,Jaspa Stritt1,William Leigh1,Matthias Imboden2

Cardiff University1,4K-MEMS Sàrl2

Show Abstract

EQ01.05: Diamond II
Session Chairs
Hiroshi Kawarada
Robert Nemanich
Tuesday PM, May 10, 2022
Hawai'i Convention Center, Level 3, 318B

1:30 PM - *EQ01.05.01
Diamond Growth by Microwave Plasma CVD for Electronic Devices

Timothy Grotjohn1,Ramon Diaz2,Cristian Herrera-Rodriguez1,Shengyuan Bai1,Paul Quayle2,Aaron Hardy3,Matthias Muehle3,Alec Fischer4,Fernando Ponce4,Elias Garratt1

Michigan State University1,Great Lakes Crystal Technologies2,Fraunhofer USA Center Midwest3,Arizona State University4

Show Abstract

2:00 PM - *EQ01.05.02
Space Charge Region Visualization Under Diamond Schottky Diode by Electron Beam Induced Current and Correlation with Defects Observed by Cathodoluminescence

David Eon1,2

Institut Neel1,University Grenoble Alpes2

Show Abstract

2:30 PM - *EQ01.05.03
Optimization of NV-/Ns Ratio of CVD Single Crystal Diamond for Quantum Applications

Jocelyn Achard1,Alexandre Tallaire2,1,Ovidiu Brinza1,Midrel Ngandeu1,Audrey Valentin1,Fabien Benedic1

LSPM-CNRS1,Institut de Recherche de Chimie Paris, Chimie ParisTech, PSL Research University2

Show Abstract

2022-05-11   Show All Abstracts

Times shown in HST (GMT-10:00)

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Srabanti Chowdhury, Stanford University
Yoshinao Kumagai, Tokyo University of Agriculture and Technology
Julien Pernot, University of Grenoble Alpes
EQ01.06: Nitrides I
Session Chairs
Alan Doolittle
Wednesday AM, May 11, 2022
Hawai'i Convention Center, Level 3, 318B

8:30 AM - EQ01.06.01
Substantial P-Type, N-Type and Homojunction Diode Functionality Using the Highest Bandgap Semiconductor Ever Demonstrated

Alan Doolittle1,Habib Ahmad1,Zachary Engel1,Christopher Matthews1,Keisuke Motoki1,Sangho Lee1

Georgia Institute of Technology1

Show Abstract

8:45 AM - EQ01.06.02
Molecular Beam Homoepitaxy of N-Polar AlN on Bulk AlN Substrates

Jashan Singhal1,Jimy Encomendero Risco1,Yongjin Cho1,Len Deurzen1,Zexuan Zhang1,Kazuki Nomoto1,Masato Toita2,Huili Xing1,Debdeep Jena1

Cornell University1,Asahi Kasei Corporation2

Show Abstract

9:00 AM - EQ01.06.03
Design of Transverse Quasi-Phase-Matched Non-Polar/AlN Waveguides for 230-nm Far-UV Second Harmonic Generation

Hiroto Honda1,Soshi Umeda1,Kanako Shojiki2,1,Hideto Miyake2,Maki Kushimoto3,Yasufumi Fujiwara1,Masahiro Uemukai1,Tomoyuki Tanikawa1,Ryuji Katayama1

Osaka University1,Mie University2,Nagoya University3

Show Abstract

9:15 AM - EQ01.06.04
Molecular Beam Homoepitaxy of N-Polar AlN—The Enabling Role of Aluminum-Assisted Surface Cleaning

Zexuan Zhang1,Yusuke Hayashi2,Vladimir Protasenko1,Jashan Singhal1,Hideto Miyake3,Huili Xing1,Debdeep Jena1,Yongjin Cho1

Cornell University1,Osaka University2,Mie University3

Show Abstract

9:30 AM - EQ01.06.05
Thermal and Electrical Properties of Wide Bandgap Nitride Thin Films Deposited at Low Temperatures for Heterogeneous Integration

Michelle Chen1,Christopher Perez1,Scott Ueda2,Aaron Mcleod2,Victoria Chen1,Zachary Sobell3,Cagil Koroglu1,Asir Intisar Khan1,Steven George3,Andrew Kummel2,Kenneth Goodson1,Eric Pop1

Stanford University1,University of California, San Diego2,University of Colorado Boulder3

Show Abstract

9:45 AM - EQ01.06
BREAK


10:15 AM - EQ01.06.07
TaC Virtual Substrates for AlGaN Epitaxy

Dennice Roberts1,Andrew Norman1,Vladan Stevanovic2,Marshall Tellekamp1

National Renewable Energy Laboratory1,Colorado School of Mines2

Show Abstract

10:30 AM - EQ01.06.08
Controllable N-Type Doping in Ultra-Wide Bandgap AlN By Chemical Potential Control

Pegah Bagheri1,Cristyan Quinones-Garcia1,Pramod Reddy2,Seiji Mita2,Ramon Collazo1,Zlatko Sitar1,2

North Carolina State University1,Adroit Materials2

Show Abstract

10:45 AM - EQ01.06.09
Increasing the Power-Electronics Figure of Merit of AlGaN with Atomically Thin Superlattices

Nick Pant1,Woncheol Lee1,Nocona Sanders1,Emmanouil Kioupakis1

University of Michigan1

Show Abstract

EQ01.07: Nitrides II
Session Chairs
Srabanti Chowdhury
Robert Kaplar
Wednesday PM, May 11, 2022
Hawai'i Convention Center, Level 3, 318B

1:30 PM - *EQ01.07.01
Selective Area Regrowth of p-type GaN and AlGaN for Power Diodes

A. Allerman1,M. H. Crawford1,A. T. Binder1,Andrew Armstrong1,G. W. Pickrell1,V. M. Abate1,J. Steinfeldt1,Robert Kaplar1

Sandia National Laboratories1

Show Abstract

2:00 PM - EQ01.07.02
Growth and Characterization of N-Polar AlGaN/AlGaN HEMTs with Varying Al Mole Fractions

Maliha Noshin1,Xinyi Wen1,Rohith Soman1,Xiaoqing Xu1,Srabanti Chowdhury1

Stanford University1

Show Abstract

2:15 PM - EQ01.07.03
Electrical Characteristics of Ag-Pd-Cu Alloy Schottky Contacts on n-Type Al0.6Ga0.4N

Keebaek Sim1,Su-Kyung Kim1,Tae-Yeon Seong1

Korea University1

Show Abstract

2:30 PM - EQ01.07.04
MOCVD Development of Thick GaN for Vertical High Power Devices

Yuxuan Zhang1,Vijay Gopal Thirupakuzi Vangipuram1,Vishank Talesara1,Kaitian Zhang1,Wu Lu1,Hongping Zhao1

The Ohio State University1

Show Abstract

2:45 PM - EQ01.07
BREAK


3:15 PM - EQ01.07.06
High Dielectric Constant (111)-Oriented Sr1-xCaxTiO3 Epitaxial Layers Integrated on AlGaN/GaN Heterostructures

Eric Jin1,Brian Downey1,Vikrant Gokhale1,Jason Roussos1,Matthew Hardy1,Tyler Growden1,Neeraj Nepal1,D. Katzer1,Jeffrey Calame1,David Meyer1

U.S. Naval Research Laboratory1

Show Abstract

3:30 PM - EQ01.07.07
Vertical GaN P-N Power Diodes with over 5 kV Breakdown Voltage

Vishank Talesara1,Yuxuan Zhang1,Vijay Gopal Thirupakuzi Vangipuram1,Hongping Zhao1,Wu Lu1

The Ohio State University1

Show Abstract

3:45 PM - EQ01.07.08
Determination of Mn Charge State in Bulk GaN:Mn Through Magnetization Steps

Katarzyna Gas1,Piotr Wisniewski2,Dariusz Sztenkiel1,Aneta Grochot1,Rafal Jakiela1,Malgorzata Iwinska3,Tomasz Sochacki3,Hanka Przybylinska1,Michal Bockowski3,Maciej Sawicki1

Institute of Physics Polish Academy of Sciences1,Institute of Low Temperature and Structure Research, Polish Academy of Sciences2,Institute of High Pressure Physics, Polish Academy of Sciences Warsaw3

Show Abstract

4:00 PM - EQ01.06.10
Growth and Characterization of High-Temperature, High-Quality, Nitrogen-Polar InAlN Films Using Plasma Assisted Molecular Beam Epitaxy

Majid Aalizadeh1,Kamruzzaman Khan1,Elaheh Ahmadi1

University of Michigan–Ann Arbor1

Show Abstract

2022-05-12   Show All Abstracts

Times shown in HST (GMT-10:00)

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Srabanti Chowdhury, Stanford University
Yoshinao Kumagai, Tokyo University of Agriculture and Technology
Julien Pernot, University of Grenoble Alpes
EQ01.08: Oxides I
Session Chairs
Hongping Zhao
Thursday AM, May 12, 2022
Hawai'i Convention Center, Level 3, 318B

8:30 AM - *EQ01.08.01
Progress in Ga2O3 Growth and Devices for High Voltage Switching Applications

Marko Tadjer1,Michael Mastro1,Alan Jacobs1,Joseph Spencer1,2,Mona Ebrish3,James Gallagher1,Jeffrey Woodward1,Jennifer Hite1,Karl Hobart1,Travis Anderson1

Naval Research Laboratory1,Virginia Tech2,National Research Council3

Show Abstract

9:00 AM - EQ01.08.02
An 8-nm-Thick Sn-Doped β-Ga2O3 MOSFET with a Normally-Off Operation

Youngbin Yoon1,Yongki Kim1,Wansik Hwang1,Myunghun Shin1

Korea Aerospace University1

Show Abstract

9:15 AM - EQ01.08.03
β-Ga2O3 Heterojunction Field-Effect Transistors Prepared via UV Laser-Assisted p-Doping of WSe2

Sanghyun Moon1,Jinho Bae2,Dongryul Lee2,Jihyun Kim1

Seoul National University1,Korea University2

Show Abstract

9:30 AM - EQ01.08.04
Realization of Highly Rectifying Schottky Barrier Diodes and pn-Heterojunctions on κ-Ga2O3

Max Kneiß1,Daniel Splith1,Peter Schlupp1,Anna Hassa1,Holger von Wenckstern1,Michael Lorenz1,Marius Grundmann1

Universität Leipzig1

Show Abstract

9:45 AM - EQ01.08
BREAK


10:15 AM - EQ01.08.05
Design Study of Enhancement-Mode β-(AlxGa1-x)2O3/Ga2O3 HEMT for Multi-kV Power Electronic Applications

Alexander Senckowski1,Man Hoi Wong1

University of Massachusetts Lowell1

Show Abstract

10:30 AM - EQ01.08.06
NiO/β-Ga2O3 p-n Heterojunction for Improved High Temperature Performance

Marshall Tellekamp1,Shahadat Sohel1,Ramchandra Kotecha1,Imran Khan1,Karen Heinselman1,Andriy Zakutayev1

National Renewable Energy Lab1

Show Abstract

EQ01.09: Oxides II
Session Chairs
Robert Kaplar
Julien Pernot
Thursday PM, May 12, 2022
Hawai'i Convention Center, Level 3, 318B

1:30 PM - *EQ01.09.01
Status of MOCVD Development of UWBG Ga2O3, AlGaO and Heterostructures

Hongping Zhao1,A F M Anhar Uddin Bhuiyan1,Lingyu Meng1,Zixuan Feng1

The Ohio State University1

Show Abstract

2:00 PM - EQ01.09.02
Strategy for Achieving Optimal Electronic Performance in Group-IV Doped Ga2O3

Joe Willis1,2,David Scanlon1

University College London1,Diamond Light Source2

Show Abstract

2:15 PM - EQ01.09.03
Thermal Stability of HVPE-Grown α-Ga2O3 on Sapphire Substrate in Different Environments

Zhuoqun Wen1,Kamruzzaman Khan1,Elaheh Ahmadi1,Yuichi Oshima2

University of Michigan1,SAMURAI2

Show Abstract

2:30 PM - EQ01.09.04
Optimized Annealing for Activation of Implanted Si in β-Ga2O3

Katie Gann1,Jonathan McCandless1,Michael Thompson1

Cornell University1

Show Abstract

2:45 PM - EQ01.09
BREAK


3:15 PM - EQ01.09.05
Comparison of Group-IV Donor Elements for Tailoring of Electrical Properties of α-Ga2O3 Grown by Pulsed Laser Deposition

Sofie Vogt1,Max Kneiß1,Clemens Petersen1,Thorsten Schultz2,Holger von Wenckstern1,Norbert Koch2,Marius Grundmann1

Universität Leipzig1,Humboldt-Universität zu Berlin2

Show Abstract

3:30 PM - EQ01.09.06
Improved Phase Stability of Orthorhombic κ-Ga2O3 Grown by Mist CVD

Roy Chung1,Ha Young Kang1,Gyeong Ryul Lee1,Young-woo Heo1

Kyungpook National University1

Show Abstract

2022-05-13   Show All Abstracts

Times shown in HST (GMT-10:00)

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Srabanti Chowdhury, Stanford University
Yoshinao Kumagai, Tokyo University of Agriculture and Technology
Julien Pernot, University of Grenoble Alpes
EQ01.10: Oxides III
Session Chairs
Srabanti Chowdhury
Friday AM, May 13, 2022
Hawai'i Convention Center, Level 3, 318B

8:30 AM - *EQ01.10.01
Optically Detected Defect Levels in Ga2O3

Mary Ellen Zvanut1,Suman Bhandari1

University of Alabama-Birmingham1

Show Abstract

9:00 AM - EQ01.10.03
Atomic Scale Investigation of Point and Extended Defects in Ion Implanted β-Ga2O3

Hsien-Lien Huang1,Christopher Chae1,Alexander Senckowski2,Man Hoi Wong2,Jinwoo Hwang1

The Ohio State University1,University of Massachusetts Lowell2

Show Abstract

9:15 AM - EQ01.10
BREAK


9:45 AM - EQ01.10.04
In Situ MOCVD Growth of Dielectric Al2O3 on β-(AlxGa1-x)2O3: Interfaces and Band Offsets

A F M Anhar Uddin Bhuiyan1,Lingyu Meng1,Zixuan Feng1,Hsien-Lien Huang1,Jinwoo Hwang1,Hongping Zhao1

The Ohio State University1

Show Abstract

10:00 AM - EQ01.10.05
High RT Mobility 2DEGs in a Modulation-Doped BaSnO3/SrSnO3 Heterostructure

Hanjong Paik1,2,Amit Verma3,Debdeep Jena1,Darrell Schlom1,4,5

Cornell University1,Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM)2,IIT Kanpur3,Kavli Institute at Cornell for Nanoscale Science4,Leibniz-Institut für Kristallzüchtung5

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10:15 AM - EQ01.10.06
MOCVD Growth of High-Quality β-(AlxGa1-x)2O3 /β-Ga2O3 Heterostructures and Superlattices Doped in a Wide Range of Electron Concentrations

Fikadu Alema1,Takeki Itoh2,Akhil Mauze2,James S. Speck2,Shubhra S. Pasayat3,Chirag Gupta3,Andrei Osinsky1

Agnitron Technology Incorporated1,University of California, Santa Barbara2,University of Wisconsin-Madison3

Show Abstract

10:30 AM - EQ01.10.07
Characterization of κ-([Al,In]xGa1-x)2O3 Interfaces and Quantum Wells via X-Ray Photoelectron Spectroscopy and a Potential Application for Quantum-Well Infrared Photodetectors

Thorsten Schultz1,2,Max Kneiß3,Philipp Storm3,Daniel Splith3,Holger von Wenckstern3,Marius Grundmann3,Norbert Koch1,2

Humboldt-Universität zu Berlin1,Helmholtz-Zentrum Berlin für Materialien und Energie2,Universität Leipzig3

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10:45 AM - EQ01.10.08
Strain States and Relaxation for α-(AlxGa1-x)2O3 Thin Films on Prismatic Planes of α-Al2O3 in the Full Composition Range

Max Kneiß1,Daniel Splith1,Holger von Wenckstern1,Michael Lorenz1,Thorsten Schultz2,3,Norbert Koch2,3,Marius Grundmann1

Universität Leipzig1,Humboldt-Universität zu Berlin2,Helmholtz-Zentrum für Energie und Materialien GmbH3

Show Abstract

EQ01.11: Oxides IV
Session Chairs
Jack Flicker
Robert Kaplar
Friday PM, May 13, 2022
Hawai'i Convention Center, Level 3, 318B

1:30 PM - EQ01.11.01
Long-Lived Metastable AlScO3 Perovskite—A Ultrawide Bandgap Hole Conductor with Low Ionization Energy of Small Hole Polarons

Cheng-Wei Lee1,2,Prashun Gorai1,2,Emily McDonald1,2,Andriy Zakutayev2,1,Vladan Stevanovic1,2

Colorado School of Mines1,National Renewable Energy Laboratory2

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1:45 PM - EQ01.11.02
Bragg Reflector Micro- and Nanowire Optical Cavities Based on Gallium Oxide—Exploring Light Confinement by Atomic Layer Deposition as an Alternative to Focused Ion Beam Patterning

Manuel Alonso-Orts1,2,Ruben Neelissen1,Marco Schowalter1,Daniel Carrasco2,Emilio Nogales2,Bianchi Méndez2,Andreas Rosenauer1,Martin Eickhoff1

University of Bremen1,Universidad Complutense de Madrid2

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2:00 PM - EQ01.11.03
3D Imaging of β-Ga2O3 Crystal Using Multiphoton-Excitation Photoluminescence

Tomoka Nishikawa1,Mayuko Tsukakoshi1,Ken Goto2,Hisashi Murakami2,Yoshinao Kumagai2,Tomoyuki Tanikawa1,Masahiro Uemukai1,Ryuji Katayama1

Osaka University1,Tokyo University of Agriculture and Technology2

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2:15 PM - EQ01.11
BREAK


2:45 PM - EQ01.11.05
High Aspect Ratio β-Ga2O3 FinFETs with Near-Zero Hystersis and Low On-Resistance by Matel-Assisted Chemical Etching

Xiuling Li2,1,Hsien-Chih Huang1,Zhongjie Ren2,A F M Anhar Uddin Bhuiyan3,Zixuan Feng3,Andrew Green4,Keson Chabak4,Hongping Zhao3

University of Illinois Urbana-Champaign1,The University of Texas at Austin2,The Ohio State University3,AirForce Research Laboratory4

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3:00 PM - EQ01.11.06
Atomic Layer Deposition of Aluminium Doped Zn1-xMgxO as Highly Transparent Conducting Films

Poorani Gnanasambandan1,Noureddine Adjeroud1,Renaud Leturcq1

Luxembourg Institute of Science and Technology1

Show Abstract

2022-05-23   Show All Abstracts

Times shown in EDT (GMT-4:00)

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Srabanti Chowdhury, Stanford University
Yoshinao Kumagai, Tokyo University of Agriculture and Technology
Julien Pernot, University of Grenoble Alpes
EQ01.12: Diamond III
Session Chairs
Julien Pernot
Monday AM, May 23, 2022
EQ01-Virtual

8:00 AM - *EQ01.12.01
Diffusion-Related Lifetime of Photoexcited Carriers in Ultrapure Diamond

Nobuko Naka1,Kazuki Konishi1,Ikuko Akimoto2,Hideto Matsuoka3,Viktor Djurberg4,Saman Majdi4,Jan Isberg4

Kyoto University1,Wakayama University2,Osaka City University3,Uppsala University4

Show Abstract

8:30 AM - *EQ01.12.02
High-Mobility P-Channel Wide Bandgap Transistors Based on Hydrogen-Terminated Diamond and Hexagonal Boron Nitride

Yamaguchi Takahide1

NIMS1

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9:00 AM - *EQ01.12.03
Optimal Design of Diamond Field Effect Transistors Towards a Key Milestone for Diamond Power Electronics

Nicolas Rouger1

CNRS, Laplace, Univ. Toulouse1

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9:30 AM - EQ01.12.04
Design of a Source Field-Plated Deep-Depletion Diamond MOSFETs

Marine Couret1,Nicolas Rouger1,Khaled Driche2,Juliette Letellier2,Anne Castelan1,Julien Pernot3

Université Toulouse, Laplace1,DiamFab2,Institut Néel3

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9:45 AM - EQ01.12.05
A Comparative Study of Structural and Electronic Properties of Group-IV Terminated Diamond (100) and (111) Surfaces

Mahesh Neupane1,2,Hector Gomez2,Jenille Cruz3,Michael Groves3,Ruzmetov Dmitry1,A Birdwell1,James Weil1,Pankaj Shah1,Sergey Rudin1,Tony Ivanov1

U.S. Army Research Laboratory1,University of California, Riverside2,California State University, Fullerton3

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EQ01.13: Nitrides/Oxides
Session Chairs
Mahesh Neupane
Monday AM, May 23, 2022
EQ01-Virtual

10:30 AM - *EQ01.13.01
Surface Chemistry of Diamond for Quantum Applications

Anke Krueger1,2

Julius-Maximilians-Universität Würzburg1,Universität Stuttgart2

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11:00 AM - *EQ01.13.02
Nanoscale and Quantum Engineering of III-Nitride Heterostructures for High Efficiency UV-C and Far UV-C Optoelectronics

Zetian Mi1,Ayush Pandey1,Xianhe Liu1,Yuanpeng Wu1

University of Michigan1

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11:30 AM - EQ01.13.03
Shallow Donor and DX State in Si Doped AlN Nanowires

Remy Vermeersch1,2,Eric Robin2,Ana Cros3,Gwénolé Jacopin1,Bruno Daudin2,Julien Pernot1

Centre National de la Recherche Scientifique1,CEA2,Universitat de València3

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11:45 AM - EQ01.13.04
Comparative Spectroscopic Study of Aluminum Nitride Grown by MOCVD in Hydorgen and Nitrogen Reaction Environment

Samiul Hasan1,Mohi Uddin Jewel1,Stavros Karakalos1,Mikhail Gaevski2,Iftikhar Ahmad1

University of South Carolina1,CVD Equipment Corporation2

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12:00 PM - EQ01.13.05
Tackling Disorder in γ-Ga2O3

Laura Ratcliff1

Imperial College London1

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12:15 PM - EQ01.13.06
Investigation of Low-Frequency Noise Characteristics of GaN Vertical PIN Diodes at Elevated Temperatures

Subhajit Ghosh1,Kai Fu2,Fariborz Kargar1,Sergey Rumyantsev3,Yuji Zhao2,Alexander Balandin1

University of California, Riverside1,Rice University2,Institute of High-Pressure Physics, Polish Academy of Sciences3

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EQ01.14: Ultra-Wide Bandgap Materials and Devices I
Session Chairs
Yoshinao Kumagai
Monday PM, May 23, 2022
EQ01-Virtual

1:00 PM - *EQ01.14.01
AlGaN Channel HEMTs for High Voltage Applications

Farid Medjdoub1,Jash Mehta1,Idriss Abid1,Yvon Cordier2,Fabrice Semond2

IEMN-CNRS1,CRHEA2

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1:30 PM - EQ01.14.02
Defect Mediated and Diode Degradation in Wide Band-Gap AlGaN Electronics

Nicholas Baldonado1,Julia Deitz2,Boris Kiefer1

New Mexico State University1,Sandia National Laboratories2

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1:45 PM - EQ01.14.03
Ultrawide Bandgap β-Ga2O3/p-GaN Heterojunction Barrier Schottky Rectifiers for Efficient Power Electronic Applications

Dinusha Herath Mudiyanselage1,Dawei Wang1,Houqiang Fu1

Iowa State University1

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2:00 PM - EQ01.14.04
Comprehensive Design and Simulation of E-Mode β-Ga2O3 Current-Aperture Vertical Electron Transistors

Dawei Wang1,Dinusha Herath Mudiyanselage1,Houqiang Fu1

Iowa State University1

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2:15 PM - EQ01.14.06
Post-synthesis Control of Oxygen Vacancy Concentrations in Metal Oxides via Exposure to Liquid Water

Edmund Seebauer1,Heonjae Jeong1,Elif Ertekin1

University of Illinois at Urbana-Champaign1

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2:30 PM - EQ01.03.02
Large Band Gap of Insulator Clay Nanosheets

Barbara Pacakova1,Per Erik Vullum2,Jon Fossum1

Norwegian University of Science and Technology1,SINTEF Industry, NO-7034 Trondheim, Norway2

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2:35 PM - *EQ01.04.05
Progress in Inversion Channel Diamond MOSFET Technologies

Norio Tokuda1,Kazuki Kobayashi1,Xufang Zhang1,Tsubasa Matsumoto1,Takao Inokuma1,Satoshi Yamasaki1,Hiromitsu Kato2,Masahiko Ogura2,Toshiharu Makino2,Daisuke Takeuchi2,Christoph Nebel1,3

Kanazawa Univ1,National Institute of Advanced Industrial Science and Technology2,Diamond and Carbon Applications3

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EQ01.15: Ultra-Wide Bandgap Materials and Devices II
Session Chairs
Yoshinao Kumagai
Monday PM, May 23, 2022
EQ01-Virtual

6:30 PM - *EQ01.15.01
Development of Surface-Activated Bonding Technologies to Compensate for Shortcomings of Ga2O3 Devices

Masataka Higashiwaki1,Zhenwei Wang1,Takahiro Kitada1,Naoki Hatta2,Kuniaki Yagi2,Jianbo Liang3,Naoteru Shigekawa3

National Institute of Information & Comm Tech1,SICOXS Corporation2,Osaka City University3

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7:00 PM - EQ01.15.02
Effects of Dislocation on Carrier Transport in α-Ga2O3 on M-Plane Sapphire Substrate

Hitoshi Takane1,Hirokazu Izumi2,Kentaro Kaneko1

Kyoto University1,Hyogo Prefectural Institute of Technology2

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7:15 PM - EQ01.15.03
MOVPE-Grown β-Ga2O3 Lateral Power Transistors with VBR Exceeding 4 kV

Arkka Bhattacharyya1,Shivam Sharma2,Fikadu Alema3,Praneeth Ranga1,Saurav Roy4,Carl Peterson4,George Seryogin3,Andrei Osinsky3,Uttam Singisetti2,Sriram Krishnamoorthy4

The University of Utah1,University at Buffalo, The State University of New York2,Agnitron technologies Incorporated3,University of California, Santa Barbara4

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7:30 PM - EQ01.15.04
Influence of HCl Support on the α-Ga2O3 Thin Film Properties Growth by Mist Chemical Vapor Deposition

Tatsuya Yasuoka1,Yoshiro Kawanishi1,Li Liu1,Giang Dang1,Toshiyuki Kawaharamura1

Kochi University of Technology1

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7:45 PM - *EQ01.15.05
Reduction of Threshold Current Density in UV-C LDs Fabricated on AlN Substrates

Maki Kushimoto1,Ziyi Zhang1,2,Yoshio Honda1,Leo Schowalter1,Chiaki Sasaoka1,Hiroshi Amano1

Nagoya University1,Asahi Kasei corporation2

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EQ01.16: Ultra-Wide Bandgap Materials and Devices III
Session Chairs
Yoshinao Kumagai
Monday PM, May 23, 2022
EQ01-Virtual

9:00 PM - *EQ01.16.01
Crystal Growth of β-Ga2O3 for Application in Power Electronic Devices

Kohei Sasaki1,Akito Kuramata1

Novel Crystal Technology, Inc.1

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9:30 PM - EQ01.16.02
Fabrication of Highly-Oriented Wide-Bandgap Oxide Thin Films on the Surface-Modified Polymer Substrates by Room-Temperature UV Laser/Light Processes

Tomoaki Oga1,Ryoya Kai1,Naho Kaneko1,Kenta Kaneko1,Satoru Kaneko2,1,Hisashi Miyazaki3,Akifumi Matsuda1,Mamoru Yoshimoto1

Tokyo Institute of Technology1,Kanagawa Institute of Industrial Science and Technology2,National Defense Academy3

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9:45 PM - EQ01.16.03
Effect of Off-Axis Angle of C-Plane Sapphire Substrate for Cubic In2O3(111) Single-Crystal Layer Growth by Halide Vapor Phase Epitaxy

Ken Goto1,Akane Mori1,Rie Togashi2,Yoshinao Kumagai1

Tokyo University of Agriculture and Technology1,Sophia University2

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10:00 PM - *EQ01.16.04
Fabrication of High-Quality Templates by Face-to-Face Annealing of Sputtered AlN for Deep UV LEDs

Hideto Miyake1,Kenjiro Uesugi1,Kanako Shojiki1,Shiyu Xiao1,Shigeyuki Kuboya1

Mie University1

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10:30 PM - EQ01.16.05
Demonstration of Dual-Polarity Photocurrent in p–n Nanowires

Danhao Wang1,Yang Kang1,Xin Liu1,Shi Fang1,Yuanmin Luo1,Haochen Zhang1,Huabin Yu1,Haiding Sun1

University of Science and Technology of China1

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10:45 PM - EQ01.16.06
Growth Mechanism of 2-Inch High-Quality Heteroepitaxial Diamond Free-Standing Wafers on Sapphire for High-Power Diamond FETs

Makoto Kasu1,Seong-Woo Kim2,Ryota Takaya1,Niloy Chandra1

Saga University1,Adamant Namiki Precision Jewel2

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