8:30 AM - *EQ19.08/EQ03.05.02
Plasma CVD Synthesis of Nitrogen-Vacancy Centers in (111)-Oriented Diamond
Hiromitsu Kato1,Moriyoshi Haruyama1,Yukako Kato1,Masahiko Ogura1,Toshiharu Makino1
AIST1
Show Abstract
Nitrogen vacancy (NV) center in diamond has much attention as a quantum material that can realize spin-based sensing due to its excellent characteristics such as long coherence time, fast manipulation rates, optical initialization and readout, etc. Precise control of material-related parameters including NV concentrations, axis alignment, volume, charge-state, are essential for higher sensitivity and are important to bring the NV centers closer to quantum application in practical use. Plasma-enhanced chemical vapor deposition (CVD) with microwave is one of the major approaches to introduce well-defined NV centers in diamond, as well as electron beam irradiation and ion implantation techniques. So far, we have already proposed following ideas based on semiconductor engineering; the charge-state stabilization by n-type Fermi control [1,2], longer coherent time by phosphorus and carbon isotopic control [3], perfect alignment of NV axis [4], device applications with PIN junction [5-7]. All these achievements are based on our comprehensive progresses of CVD diamond growth, impurity doping, junction management, and device fabrication processes. Details will be discussed focusing on technical aspects peculiar to plasma CVD engineering of diamond NV centers.
Acknowledgments
This work was partially supported by MEXT Q-LEAP (JPMXS0118067395), JST CREST (JPMJCR1773), MIC R&D (JPMI00316), and JST Moonshot R&D (JPMJMS2062).
References
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