Call for Papers

Traditional CMOS silicon technologies will face major challenges in scaling, energy consumption and performance in the coming years. Moore's law, which guides long-term planning and sets targets for research and development for the semiconductor industry, predicts that by 2020, bits will be a few atoms in size where quantum effects will dominate. To overcome these fundamental limits and to leverage quantum effects in information technologies, new materials and devices are currently being developed. These new developments include superconducting qubit circuits with oxide technologies, nano-scale semiconductor quantum dots, hybrid gate-controllable semiconductor-superconductor devices and novel topological matter, with the possibility of exploiting new devices that are less sensitive to environment noise. A major challenge lies in interfacing materials with different structural and electronic properties to develop material platforms that leap beyond current device performances. For superconducting devices, losses near interfaces could severely limit device performance. In semiconductors, dielectric layers introduces trap centers and charge noise. Heterostructures of new topological materials with low densities of defects are central for future materials platforms for quantum information technologies. These topics have led to a plethora of recent theoretical and experimental activities, driven both by fundamental scientific questions and the promise of future technological breakthroughs.This symposium seeks to bring together researchers in both materials science and quantum information device communities.

Topics include materials issues in quantum information technologies, research focused on new quantum states of matter that can support quantum information, and new combinations of materials that offer promise to introduce new classes of quantum information devices. The goal of the symposium is to find a deeper understanding of the connection between material properties and qubit properties.