Plenary Speakers
Shigefusa Chichibu, Tohoku University
Impact of Vacancy Complexes on the Nonradiative Recombination Processes in III-N Devices
Nicolas Grandjean, École Polytechnique Fédérale de Lausanne
Efficiency of Nitride LEDs—Impact of Point and Extended Defects
Zetian Mi, University of Michigan
Emerging Applications of III-Nitride Nanocrystals
Umesh Mishra, University of California, Santa Barbara
Conventional and N-Polar GaN HEMTs for High Frequency and High Power Applications
Shuji Nakamura, University of California, Santa Barbara
Developments of Nonpolar/Semipolar Edge Emitting Laser Diodes and VCSELs
Zlatko Sitar, North Carolina State University
How Do We Make AIGaN into a Versatile Semiconductors?
Martin Strassburg, OSRAM
Industrial LED Development—From UV to Red and from Efficient Components to Smart Devices
Jun Suda, Nagoya University
Development of Vertical GaN Power Devices
Invited Speakers
Martin Albrecht, Leibniz Institute for Crystal Growth
Alloy Properties Revealed by Electron Microscopy
Oliver Ambacher, Fraunhofer Institute
ScAlN-Based Ferroelectric and Piezoelectric Electro Acoustic Devices
Andrew Armstrong, Sandia National Laboratories
Visible and Solar-Blind Photodetectors using AlGaN High Electron Mobility Transistors with Nanodot-Based Floating Gate
Guillaume Cassabois, Université de Montpellier
Boron Nitride—Its Physics and Applications
Ana Cros, University of Valencia
Electrical Force Microscopies for the Study of Nitride Semiconductors
Rafael Dalmau, HexaTech, Inc.
AlN Single Crystal Substrate Growth for UV Applications
Russell Dupuis, Georgia Institute of Technology
Progress in UV VCSEL Structures
Sven Einfeld, Leibniz Ferdinand Braun Institute
GaN-Based Distributed Feedback and Distributed Bragg Reflection Laser Diodes with High-Order Surface Gratings
Hiroshi Fujioka, Tokyo University
Sputtering of III-Nitrides and Device Performance of Sputtered Material
Yasufumi Fujiwara, Osaka University
Development of Semiconductor Intra-Center Photonics
Noëlle Gogneau, University of Paris-Saclay
GaN-Based Piezo-Generators
Izabella Grzegory, Unipress
High Pressure in Physics and Technology of Bulk GaN Crystallization and Wafer Processing
Jung Han, Yale University
Semipolar GaN for Lighting and Display—Will This Ever Become Real?
Matthew Hardy, U.S. Naval Research Laboratory
Epitaxial Transition-Metal Nitrides—ScAlN, NbNx, and TaNx for Next-Generation Electronic Devices
Tamotsu Hashizume, Hokkaido University
Interface Control of Al2O3-Based MOS Structures for Advanced GaN Transistors
Johannes Herrnsdorf, University of Strathclyde
Gallium Nitride Micro-LED Drive Circuits for Visible Light Communications
Hideki Hirayama, RIKEN
LEE Enhancement in AlGaN UVC LED using Photonic Crystal Reflector
Robert Howell, Northrup Grumman Corporation
Super-Lattice Castellated FETs and Their Role in Next Generation RF Switches
Debdeep Jena, Cornell University
Ultrathin GaN/AlN QWs—Physics and Potential Applications
Yoshihiro Kangawa, Kyushu University
A New Theoretical Approach to Nitride Crystal Growth
Jeehwan Kim, Massachusetts Institute of Technology
Van der Waals Epitaxy of GaN Films on Graphene
Katsumi Kishino, Sophia University
III-N Nanocolumn Visible LEDs
Hu Liang, imec
Enhancement-Mode GaN-HEMT Technology on 200 mm Si
Robert Martin, University of Strathclyde
Challenges in Accurate Assessment of Nanorod Structures
Farid Medjdoub, Institute of Electronics, Microelectronics and Nanotechnology
Towards Higher Voltage in III-Nitride Devices
Elke Meissner, Fraunhofer Institute
Identification of Key-Defects in GaN Epitaxial Layers Relevant for the Performance and Reliability of a GaN Based Device
Matteo Meneghini, Università degli Studi di Padova
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives
Yutaka Mikawa, Mitsubishi Chemicals Corporation
Acidic Ammonothermal Growth of Bulk GaN
Tomoyoshi Mishima, Hosei University
High Breakdown Voltage Vertical p-n Junctions GaN Diodes
Yusuke Mori, Osaka University
Na-Flux Growth of Bulk GaN
Yusuke Nakayama, Sony Corporation
Watt-Class Semipolar Green Lasers
Tetsuo Narita, Toyota
Growth of p-Type GaN Layers with Low Mg Concentrations by using MOVPE and the Application to Vertical Power Devices
Lorenzo Rigutti, University of Rouen
Quantitative Atom Probe Tomography of Ternary III-N Alloys—Accuracy Issues and Correlation with Optical Spectroscopy
Stefan Schulz, Tyndall National Institute
Nonlinear Piezoelectricity in III-N Heterostructures—The Role of the Growth Plane
Ulrich Schwarz, Chemnitz University of Technology
Group-III-Nitride Based Optoelectronics as Enabling Technology for Medical Implants
James Speck, University of California, Santa Barbara
Exploring the Fundamentals of Efficiency in III-N LEDs
Qian Sun, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO)
Heteroepitaxy of GaN-Based Materials and Devices on Si
Tetsuya Takeuchi, Meijo University
Epitaxy and Performance of VCSEL Structures
Maria Tchernycheva, Université Paris-Sud
Nitride Nanowires for Mechanically Flexible Devices
Michael Uren, University of Bristol
Impact of Deep Levels on GaN HEMTs
Chris Van de Walle, University of California, Santa Barbara
Dopants and Defects in Ultrawide-Band-Gap Nitrides
Maria Vladimirova, CNRS-University of Montpellier
Control Over Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures
Xinqiang Wang, Peking University
Growth of Ultrathin GaN Quantum Wells towards Deep Ultraviolet Light Sources
Tim Wernicke, Technischen Universität Berlin
High Quality AlGaN and Its UV LED Applications
Euijoon Yoon, Seoul National University
Self-Passivated High-Efficiency c-Plane Micro-LED Array without Singulation Fabricated on Sapphire Nano-Membrane Structures