Plenary Speakers
Shigefusa Chichibu, Tohoku University
Impact of Vacancy Complexes on the Nonradiative Recombination Processes in III-N Devices
Nicolas Grandjean, École Polytechnique Fédérale de Lausanne
Efficiency of Nitride LEDs—Impact of Point and Extended Defects
Zetian Mi, University of Michigan
Emerging Applications of III-Nitride Nanocrystals
Umesh Mishra, University of California, Santa Barbara
Conventional and N-Polar GaN HEMTs for High Frequency and High Power Applications
Shuji Nakamura, University of California, Santa Barbara
InGaN VCSEL and Edge Emitting Lasers
Zlatko Sitar, North Carolina State University
How Do We Make AlGaN an Efficient Semiconductor?
Martin Strassburg, OSRAM
Industrial LED Development—From Red to UV
Jun Suda, Nagoya University
Development of Vertical GaN Power Devices
Invited Speakers
Martin Albrecht, Leibniz Institute for Crystal Growth
Alloy Properties Revealed by Electron Microscopy
Oliver Ambacher, Fraunhofer Institute
ScAlN-Based Ferroelectric and Piezoelectric Electro Acoustic Devices
Andrew Armstrong, Sandia National Laboratories
Defects and Device Performance of Al-Rich AlGaN HEMTs and Photodetectors
Guillaume Cassabois, Université de Montpellier
Boron Nitride—Its Physics and Applications
Ana Cros, University of Valencia
Electrical Force Microscopies for the Study of Nitride Semiconductors
Rafael Dalmau, HexaTech, Inc.
AlN Single Crystal Substrate Growth for UV Applications
Russell Dupuis, Georgia Institute of Technology
Progress in UV VCSEL Structures
Sven Einfeld, Leibniz Ferdinand Braun Institute
Nitride Distributed Feedback Lasers
Hiroshi Fujioka, Tokyo University
Sputtering of III-Nitrides and Device Performance of Sputtered Material
Yasufumi Fujiwara, Osaka University
Development of Semiconductor Intra-Center Photonics
Noëlle Gogneau, University of Paris-Saclay
GaN-Based Piezo-Generators
Izabella Grzegory, Unipress
Growth of Bulk GaN Crystals
Jung Han, Yale University
Nonpolar and Semipolar GaN for Solid-State Lighting
Matthew Hardy, U.S. Naval Research Laboratory
ScAlN and Nb2N Layers for Nitride Devices
Tamotsu Hashizume, Hokkaido University
Interface Control of Al2O3-Based MOS Structures for Advanced GaN Transistors
Johannes Herrnsdorf, University of Strathclyde
GaN-Based µLED Drive Circuit for Visible Light Communication
Hideki Hirayama, RIKEN
The State-of-the-Art in AlGaN UV LEDs
Robert Howell, Northrup Grumman Corporation
Super-Lattice Castellated FETs and Their Role in Next Generation RF Switches
Debdeep Jena, Cornell University
Ultrathin GaN/AlN QWs—Physics and Potential Applications
Yoshihiro Kangawa, Kyushu University
A New Theoretical Approach to Nitride Crystal Growth
Jeehwan Kim, Massachusetts Institute of Technology
Van der Waals Epitaxy of GaN Films on Graphene
Katsumi Kishino, Sophia University
III-N Nanocolumn Visible LEDs
Hu Liang, imec
Enhancement-Mode GaN-HEMT Technology on 200 mm Si
Robert Martin, University of Strathclyde
Challenges in Accurate Assessment of Nanorod Structures
Farid Medjdoub, Institute of Electronics, Microelectronics and Nanotechnology
AlN and AlGaN-Based HEMTs for Power Applications
Elke Meissner, Fraunhofer Institute
Defects in GaN Epitaxial Layers and Their Role in Electrical Transport
Matteo Meneghini, Università degli Studi di Padova
Reliability of Lateral and Vertical GaN Devices
Yutaka Mikawa, Mitsubishi Chemicals Corporation
Acidic Ammonothermal Growth of Bulk GaN
Tomoyoshi Mishima, Hosei University
High Breakdown Voltage Vertical P-N Junction GaN Diodes
Yusuke Mori, Osaka University
Na-Flux Growth of Bulk GaN
Yusuke Nakayama, Sony Corporation
Watt-Class Semipolar Green Lasers
Tetsuo Narita, Toyota
GaN Epitaxy for Vertical GaN Devices
Lorenzo Rigutti, University of Rouen
Quantitative Atom Probe Tomography of Ternary III-N Alloys
Stefan Schulz, Tyndall National Institute
Second Order Piezoelectricity and Role of Growth Direction in Nitrides
Ulrich Schwarz, Chemnitz University of Technology
Nitride-Based Bio-Detection Devices
James Speck, University of California, Santa Barbara
Nitride Tunnel Junction Devices
Qian Sun, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO)
Heteroepitaxy of GaN-Based Materials and Devices on Si
Tetsuya Takeuchi, Meijo University
Epitaxy and Performance of VCSEL Structures
Maria Tchernycheva, Université Paris-Sud
Applications of III-N Nanowire Arrays
Michael Uren, University of Bristol
Deep Levels in GaN Based Electronic Devices
Chris Van de Walle, University of California, Santa Barbara
Theory of Dopants and Defects in Ultrawide-Band-Gap Nitrides
Maria Vladimirova, CNRS-University of Montpellier
Indirect Exciton Spectroscopy in Nitride Heterostructures
Xinqiang Wang, Peking University
Growth of Ultrathin GaN Quantum Wells towards Deep Ultraviolet Light Sources
Tim Wernicke, Technischen Universität Berlin
High Quality AlGaN and Its UV LED Applications
Euijoon Yoon, Seoul National University
Micro-LEDs on Sapphire Nano-Membranes for Display Applications