Tutorial EM10: Memristive Materials and Neuromorphic Devices

Sunday, November 27, 2016
1:30 PM - 5:00 PM
Hynes, Level 2, Room 204


  • Daniele Ielmini, Polytechnic University of Milan
  • Themis Prodromakis, University of Southampton

Due to the technological limitation of flash memory, a significant number of new nonvolatile memories are now being proposed. The tutorial covers the fundamental physics behind the emerging nonvolatile memories. Resistive switching memory (ReRAM) technologies (based on non-phase change materials) and its application will be the focus of this tutorial. Presentations by two leading researchers will cover the fundamental background of devices. 

Themis Prodromakis will review the new materials and the physical properties required for this type of memory cells. The link between the resistance-switching mechanisms and the realization of memristor will be included in this segment, along with the state of the art of this technology. 

Daniele Ielmini will describe the various modeling options at the physical and electronic level, concluding with an overview of how they can be used to realize neuromorphic devices and systems with a huge potential for adoption in many applications, such as accelerated machine learning and brain-inspired computation.