Chairs
Allen Bowling -- Texas Instruments, Inc
Marc Heyns -- IMEC VZW
Rafael Reif -- MIT
Alessandro Tonti -- SGS Thomson Microelectronics
Symposium Support
* Invited paper
SESSION L1: CHEMICAL AND DI-WATER CONSUMPTION
Chairs: Marc Heyns and Gary W. Rubloff
Wednesday Morning, December 4, 1996
Essex West (W)
8:30 AM *L1.1
WATER USE MINIMIZATION IN SEMICONDUCTOR MANUFACTURING PLANTS, Farhang Shadman, Univ of Arizona, Dept of EE&C, Tucson, AZ.
9:00 AM L1.2
SUBSTANING AND CONTROL OF SULFURIC ACID REPROCESSOR, Pier Paolo Abis, Calogero Caputo, Ciro Napoletano, Texas Instruments - Italy, Avezzano, ITALY.
9:15 AM L1.3
IN SITU MONITORING OF HF REPROCESSING IN INDUSTRIAL-SCALE RECIRCULATOR BATH, Anand Reddy, MIT, Dept of MS&E, Cambridge, MA; G. Norga, A. S. Park, MIT, Cambridge, MA; Aimee L. Smith, MIT, Dept of Matls Science, Cambridge, MA; Jurgen Michel, Lionel C. Kimerling, MIT, Dept of MS&E, Cambridge, MA; B. Parek, J. H. Shyu, E. Deane, Millipore, Bedford, MA.
9:30 AM L1.4
ANHYDROUS HF PROCESSING AS AN ALTERNATIVE TO HF/WATER PROCESSES, James A. Staffa, Paul A. Roman, Kyuwhan Chang, Pennsylvania State Univ, Dept of Electrical Engr, University Park, PA; Kevin J. Torek, Micron Technology Inc, Boise, ID; Jerzy Ruzyllo, Pennsylvania State Univ, Dept of Electrical Engr, University Park, PA.
9:45 AM BREAK
10:15 AM *L1.5
DETERMINATION OF RINSE LIMITING FACTORS FOR OVERFLOW RINSE TANKS, Anthony S. Geller, Sandia National Laboratories, Albuquerque, NM; Timothy J. O'Hern, Tom W. Grasser, Sandia National Laboratories, Engineering Sciences Center, Albuquerque, NM; Paul G. Lindquist, John O. Throngard, Santa Clara Plastics, Ultra Clean R&D, Boise, ID.
10:45 AM L1.6
MINIMIZATION OF DI WATER CONSUMPTION IN WET CLEAN RINSE TANKS, Jeffrey Cook, Mike Rhodanz, Freddie Hampton, Motorola Inc, Mesa, AZ.
11:00 AM L1.7
THE IMPLEMENTATION OF DILUTE CHEMISTRIES IN SEMICONDUCTOR MANUFACTURING, Ron Sanders, John Stih, Motorola Inc, ACT, Mesa, AZ; Pat Schay, Motorola Inc, Dept of ACT, Mesa, AZ; Fuyu Lin, Motorola Inc, ACT, Mesa, AZ.
11:15 AM L1.8
PANEL DISCUSSION: LOWERING OF CHEMICAL AND DI-WATER CONSUMPTION: STATE-OF-THE-ART, FUTURE DIRECTIONS, Anthony S. Geller, Sandia National Laboratories, Albuquerque, NM; Jerzy Ruzyllo, Pennsylvania State Univ, Dept of Electrical Engr, University Park, PA; Marc Heyns, IMEC VZW, ASP/VMT, Leuven, BELGIUM; Farhang Shadman, Univ of Arizona, Dept of EE&C, Tucson, AZ; Alessandro Tonti, SGS Thomson Microelectronics, Agrate Brianza, ITALY.
SESSION L2: HAZARDOUS GASES
Chairs: Allen Bowling and Farhang Shadman
Wednesday Afternoon, December 4, 1996
Essex West (W)
1:30 PM *L2.1
PFC EMISSION CONTROL OPTIONS FOR PLASMA PROCESSING TOOLS: A CURRENT ASSESSMENT, Michael T. Moccella, DuPont, Wilmington, DE.
2:00 PM L2.2
PERHALOGENATED ORGANIC BY-PRODUCTS FROM PLASMA ETCHING PROCESSES AND THEIR EFFECTS ON HUMAN HEALTH AND ENVIRONMENTAL IMPACT, Siegfried Bauer, Ilona Wolff, Univ of Halle, Inst of Environmental Toxicology, Halle/Saale, GERMANY.
2:15 PM L2.3
ENVIRONMENTAL ISSUES OF PERFLUOROCOMPOUNDS IN THE SEMICONDUCTOR INDUSTRY, Jeffrey D. Williams, U.S. Department of Defense, Fort Meade, MD.
2:30 PM L2.4
EFFECTIVENESS OF AN INWARDLY FIRED BURNER ON ABATEMENT OF PFCs, Joseph Van Gompel, Peter J. Mawle, Philip Chandler, Edwards High Vacuum International, Austin, TX.
2:45 PM BREAK
3:15 PM L2.5
INVESTIGATION OF DECOMPOSITION TECHNOLOGY OF
AND IPA RECYCLE SYSTEM3, Akira Takamatsu, Hitachi Ltd, Dept of Process Engr Dev, Kodaira-shi, Tokyo, JAPAN; Katuhiko Mitsuta, Hitachi Ltd, Dept of MOS LSI Mfg, Kodaira-shi Tokyo, JAPAN; Yuji Noguchi, Shunji Sasabe, Hitachi Ltd, Dept of Front-End Manufacturing Tech, Kodaira-shi Tokyo, JAPAN; Ken Okutani, Yoshikazu Tanabe, Shuuichi Nakamura, Hitachi Ltd, Device Development Center, Ohme-shi Tokyo, JAPAN.
3:30 PM L2.6
GAS STREAM ANALYSIS AND PFC RECOVERY IN A SEMICONDUCTOR PROCESS, Jan A.B. Van Hoeymissen, Nigel Anderson, Michael Daniels, Wim Fyen, IMEC VZW, ASP-ESH, Leuven, BELGIUM; Marc Heyns, IMEC VZW, ASP/VMT, Leuven, BELGIUM.
3:45 PM L2.7
AN INTEGRATED APPROACH FOR THE SAFE HANDLING OF HYDRIDES, James R. Shealy, Cornell Univ, Dept of Electrical Engr, Ithaca, NY; Barry P. Butterfield, Cornell Univ, Dept of Electical Engr, Ithaca, NY; David T. Emerson, Cornell Univ, Dept of Electrical Engr, Ithaca, NY; Keith Whittingham, AT&T Bell Laboratories, Orlando, FL; Robert R. Bland, Cornell Univ, Dept of Environmental Engr, Ithaca, NY.
4:00 PM L2.8
PLASMA ETCHING OF SILICON DIOXIDE AND SILICON NITRIDE WITH NON-PERFLUOROCOMPOUND CHEMISTRIES: HYDROFLUOROCARBONS AND IODOFLUOROCARBONS, Simon Karecki, Benjamin A. Tao, MIT, Cambridge, MA; Rafael Reif, MIT, Dept of Electrical Engr & Computer Science, Cambridge, MA.
4:15 PM L2.9
PANEL DISCUSSION: PLASMA PROCESSES AND PFC's: STATE-OF-THE-ART, URGENT PROBLEMS, OUTLOOK, Gary W. Rubloff, Univ of Maryland, Dept of Materials & Nuclear Engr, College Park, MD; Allen Bowling, Texas Instruments, Inc, Dallas, TX; Rafael Reif, MIT, Dept of Electrical Engr & Computer Science, Cambridge, MA; Alessandro Tonti, SGS Thomson Microelectronics, Agrate Brianza, ITALY; Michael T. Moccella, DuPont, Wilmington, DE.
SESSION L3: EQUIPMENT AND PROCESS OPTIMIZATION FOR ESH
Chairs: Anthony S. Geller and Rafael Reif
Thursday Morning, December 5, 1996
Essex West (W)
9:00 AM *L3.1
SENSING AND SIMULATION FOR ENVIRONMENTALLY-CONSCIOUS SEMICONDUCTOR MANUFACTURING, Gary W. Rubloff, Univ of Maryland, Dept of Materials & Nuclear Engr, College Park, MD.
9:30 AM L3.2
NEXT GENERATION PROCESSES AND EQUIPMENT THAT LEAD TO POSITIVE ENVIRONMENT, SAFETY, AND HEALTH IMPACTS, Phyllis Pei, H. Ray Kerby, SEMATECH Inc, Austin, TX.
9:45 AM BREAK
10:15 AM L3.3
PARALLEL DOWNFLOW RINSE, WATER-SAVING TECHNOLOGY IN WAFER RINSE, Hiratsuka Yutaka, Dan Science Co Ltd, Research & Development, Tokyo, JAPAN; Fujikawa Nobuyuki, Dan Science Co Ltd, R&D, Tokyo, JAPAN.
10:30 AM L3.4
A TECHNIQUE FOR MEASURING SLURRY-FLOW DYNAMICS DURING CHEMICAL-MECHANICAL POLISHING, Jonathan Coppeta, Chris Rogers, Tufts Univ, Dept of Mechanical Engr, Medford, MA.
10:45 AM L3.5
A PLASMA REACTOR FOR SOLID WASTE TREATMENT ON PECVD PRODUCTION SYSTEMS., Sebastien Raoux, Applied Materials, Inc., Dielectric CVD, Santa Clara, CA; Kevin Fairbairn, Mark Fodor, William Taylor, David Cheung, Applied Materials, Inc., DCVD, Santa Clara, CA.
11:00 AM L3.6
MEASUREMENT OF ARSENIC EMISSION FROM DOPED CZOCHRALSKI SILICON CRYSTAL GROWING OPERATION, Drew Sinha, Siltec Silicon, Salem, OR; Chris Carlson, Air Products & Chemicals Inc, Tualatin, OR.
11:15 AM L3.7
PANEL DISCUSSION: THEORY AND MODELLING OF PROCESSES AND PROCESS REDESIGN: DESIGN FOR THE ENVIRONMENT, Allen Bowling, Texas Instruments, Inc, Dallas, TX; Gary W. Rubloff, Univ of Maryland, Dept of Materials & Nuclear Engr, College Park, MD; Rafael Reif, MIT, Dept of Electrical Engr & Computer Science, Cambridge, MA; Chris Rogers, Tufts Univ, Dept of Mechanical Engr, Medford, MA; Phyllis Pei, SEMATECH Inc, Austin, TX.
SESSION L4: NOVEL MATERIALS FOR ESH
Chairs: Michael T. Moccella and Alessandro Tonti
Thursday Afternoon, December 5, 1996
Essex West (W)
1:30 PM *L4.1
CHLORINE PRECURSORS FOR GATE OXIDATION PROCESSES, Michael J. McGeary, Olin Corp, Microelectronic Materials Div, Cheshire, CT; Paul W. Mertens, IMEC VZW, Leuven, BELGIUM; Bert Vermeire, Univ of Arizona, Tucson, AZ; Marc Heyns, IMEC VZW, ASP/VMT, Leuven, BELGIUM; Hessel Sprey, IMEC VZW, ASM, Leuven, BELGIUM; Albert Lubbers, Olin Corp, Microelectronics Matls Div, Zwijndrecht, BELGIUM.
2:00 PM L4.2
PHOTORESIST POLYMER MASKS FORMED FROM AN AQUEOUS PHASE BY POLYMERIZATION IN A TWO DIMENSIONAL SURFACTANT TEMPLATE, Gerard Newman, Univ of Oklahoma, Dept of Chemical Engr & Matls Science, Norman, OK; Jeffrey H. Harwell, Univ of Oklahoma, Dept of Chemical Engr, Norman, OK; Bruce Roberts, Cornell Univ, Dept of Physics, Ithaca, NY.
2:15 PM L4.3
AN INTEGRATED CHEMICAL-MICROBIOLOGICAL APPROACH FOR THE DISPOSAL OF WASTE THIN FILM CADMIUM TELLURIDE PHOTOVOLTAIC MODULES, Kishor M. Paknikar, Agharkar Research Inst, Pune, INDIA; J. M. Rajwade, A. V. Pethkar, Agharkar Research Inst, Microbial Sciences Div, Pune, INDIA; D. J. Goyal, P. G. Bilurkar, Nitant V. Mate, EcoSolar Systems Pvt Ltd, Pune, INDIA.
2:30 PM L4.4
ROLE OF CERTIFIED REFERENCE MATERIALS IN ENVIRONMENTAL STUDIES, Arun K. Agarwal, National Physics Laboratory, Dept of Indian Ref Materials, New Delhi, INDIA; Krishan Lal, National Physics Laboratory, Materials Characterization Div, New Dehli, INDIA.
2:45 PM L4.5
POINT-OF-USE SILICON SOURCES FOR CVD, Dovas A. Saulys, Univ of Wisconsin-Madison, Dept of Chemistry, Madison, WI; S. A. Safvi, Univ of Wisconsin-Madison, Dept of Chemical Engr, Madison, WI; D. F. Gaines, B. R. Preston, J. P. Dopke, Univ of Wisconsin-Madison, Dept of Chemistry, Madison, WI; Thomas F. Kuech, Univ of Wisconsin-Madison, Dept of Chemical Engr, Madison, WI.
3:00 PM L4.6
SAFE PRECURSOR GAS FOR BROAD REPLACEMENT OF SiH
IN PECVD PROCESSES EMPLOYED IN IC PRODUCTION, Mark J. Loboda, Christine Grove, Jeffrey Seifferly, Ryan Schneider, Dow Corning Corp, Midland, MI.