Chairs

Miltiadis K. Hatalis, Lehigh University
Fumiaki Funada, Sharp Corporation
Jerzy Kanicki, University of Michigan
Christopher J. Summers, Georgia Institute of Technology

Symposium Support

IBM
Sharp Corporation
Xerox

TUTORIAL
STH: FLAT PANEL DISPLAY MATERIALS
Instructors: Jerzy Kanicki, University of Michigan
C. J. Summers, Georgia Institute of Technology
Monday, April 8, 1:30 - 5:00 P.M.
Golden Gate C1

*Overview of Electronic Information Displays
*Active-Matrix Liquid Crystal Displays
*Thin Film Light-Emitting Structures
*Electroluminescent Phosphors
*Field Emission Displays

The key to the active-matrix liquid-crystal displays (AMLCD) success is that, while they retain all the desirable properties of the conventional LCDs, namely a very thin, low mass displays, they offer an image quality which in most ways matches or even exceeds that of a CRT. On critical technology for achieving such displays is the use of thin-film transistor (TFT) or diodes as an electronic switch at each pixel in the display. During this tutorial, the properties of the materials and devices used in the present AMLCDs will be discussed in details, but, at the same time, the new remaining challenges related to a high-definition AMLCDs will also be addressed. Despite that AMLCDs have established themselves as a major force in terms of both display quality and market growth, there remain a considerable interest in leapfrog emissive display technologies such as organic polymer light-emitting diodes (LEDs). However, one of the major concerns which must be addressed before polymer LEDs can be manufactured in a large scale is the efficiency and lifetime of the LEDs, both under storage and in operation. These important issues and their relation to the materials will be discussed during this tutorial. Also one of most exciting events in the last few years in emissive displays is renewed interest in field-emission displays (FEDs). While there has been significant progress in emitter-array development, there are numerous engineering challenges, such as low-voltage phosphor efficiency, phosphor aging, vacuum processing and the development of first-generation manufacturing tools, which must be resolved prior to commercial production of FEDs. Some of these challenges will be addressed during this tutorial. Finally, as always, the reliability, failure mechanisms, and lifetime issues of FEDs should be rigourously studied before field-emission devices can be commercialized.


Related Symposia: A: AMORPHOUS SILICON TECHNOLOGY - 1996; and, J: THIN FILMS FOR PHOTOVOLTAIC AND RELATED DEVICE APPLICATIONS

*Invited Paper

JOINT SESSION H1/A2: THIN FILM TRANSISTORS I
Chair: Michael Hack
Tuesday Morning, April 9
Golden Gate C2

8:30 A.M. *H1.1/A2.1
AMORPHOUS SILICON TFT'S AND FLAT PANEL DISPLAYS, Toshihisa Tsukada, Hitachi, Ltd., Central Research Laboratory, Tokyo, Japan.

9:00 A.M. *H1.2/A2.2
FLAT PANEL DISPLAYS, Malcolm Thompson, Xerox Palo Alto Research Center, Palo Alto, CA.

9:30 A.M. H1.3/A2.3
A NOVEL DEVICE STRUCTURE FOR HIGH PERFORMANCE, HIGH VOLTAGE AMORPHOUS SILICON THIN-FILM TRANSISTORS, Amir M. Miri, Prasad S. Gudem and Savvas G. Chamberlain, University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, Canada.

9:45 A.M. H1.4/A2.4
THE FABRICATION AND PERFORMANCE OF NOVEL HIGH VOLTAGE POLYSILICON THIN FILM TRANSISTOR STRUCTURES INCORPORATING A SEMI-INSULATING FIELD PLATE, F.J. Clough, Y. Chen, W.I. Milne, University of Cambridge, Engineering Department, Cambridge, United Kingdom; E.M. Sankara Narayanan, De Montfort University, Emerging Technologies Centre, Leicester, United Kingdom; and W. Eccleston, University of Liverpool, Electrical Engineering Department, Liverpool, United Kingdom.

10:00 A.M. BREAK

JOINT SESSION H2/A3: THIN FILM TRANSISTORS II
Chair: Miltiadis K. Hatalis

10:30 A.M. *H2.1/A3.1
HIGH DEPOSITION RATE a-Si:H FOR THE FLAT PANEL DISPLAY INDUSTRY, J. Hautala, Z. Saleh, J.F.M. Westendorp, Tokyo Electron America, Beverly, MA; J. Souk, IBM T.J. Watson Research Center, Yorktown Heights, NY; and H. Meiling, Utrecht University, Utrecht, Netherlands.

11:00 A.M. H2.2/A3.2
SURFACE ROUGHNESS OF SILICON-NITRIDE GATE INSULATORS DEPOSITED IN A 40-MHZ GLOW DISCHARGE, H. Meiling, W.F. van der Weg, Debye Institute Utrecht University, Department of Atomic and Interface Physics, Utrecht, Netherlands; J.J. Hautala and J.F.M. Westendorp, Tokyo Electron America, Inc., Beverly, MA.

11:15 A.M. H2.3/A3.3
HOT-WIRE DEPOSITED AMORPHOUS SILICON THIN-FILM TRANSISTORS, R.E.I. Schropp, K.F. Feenstra and H. Meiling, Utrecht University, Debye Institute, Utrecht, Netherlands.

11:30 A.M. H2.4/A3.4
BELOW THRESHOLD CURRENT DISTRIBUTION IN a-Si:H TFTs: BACK CHANNEL CONDUCTION, H.C. Slade, M.S. Shur, University of Virginia, Charlottesville, VA; S.C. Deane, Philips Research Laboratory, Surrey, United Kingdom; and M. Hack, Xerox Palo Alto Research Center, Palo Alto, CA.

11:45 A.M. H2.5/A3.5
CHARACTERISTICS OF XeCl EXCIMER-LASER ANNEALED INSULATOR, K.H. Jang, H.S. Chol and M.K. Hand, Seoul National University, Department of Electrical Engineering, Seoul, Korea.


SESSION H3: LIQUID CRYSTAL DISPLAYS
Chairs: F. Funada and S. Naemura
Tuesday Afternoon, April 9
Golden Gate C1

1:30 P.M. *H3.1
LIQUID-CRYSTALS FOR MULTIMEDIA DISPLAY USE: MATERIALS AND THEIR PHYSICAL PROPERTIES, Shohei Naemura, Merck Japan Limited, LC Technical Center, Kanagawa, Japan.

2:00 P.M. *H3.2
TBD

2:30 P.M. H3.3
SUSPENDED PARTICLE DISPLAY USING NOVEL COMPLEXES, Hisato Takeuchi, Arimitsu Usuki, Hiromitsu Tanaka, Akane Okada, Toyota Central R&D Laboratories, Inc., Materials Division III, Nagakute, Japan; and Kazuo Tojima, Toyota Motor Corporation, Material Engineering Division I, Toyota, Japan.

2:45 P.M. H3.4
STUDIES OF SURFACE ORIENTATION IN BUFFED AMORPHOUS AND SEMICRYSTALLINE POLYMER FILMS, Y. Liu, H.R. Brown, T.P. Russell, M. Friedenberg, J. Diaz, A. Cossy, M. Samant, J. Stohr, IBM Almaden Research Center, San Jose, CA.

3:00 P.M. H3.5
THE EFFECT OF PHENYL BENZOATE AND CYANOBIPHENYL SELF-ASSEMBLED MONOLAYERS ON LIQUID CRYSTAL ALIGNMENT, Renate J. Ondris-Crawford, Curtis W. Frank, Stanford University, Department of Chemical Engineering, Stanford, CA; Lorraine M. Lander and Robert J. Twieg, IBM Almaden Research Center, San Jose, CA.

3:15 P.M. H3.6
ANISOTROPIC CROSSLINKING AND LC ALIGNMENT ON PHOTOACTIVE POLYMERS, I. Sage, G. Bryan-Brown, DRA Electronics Sector, Worcestershire, United Kingdom; J.W. Goodby and J. Hollingshurst, University of Hull, Department of Chemistry, Hull, United Kingdom.

3:30 P.M. BREAK

SESSION H4: TRANSPARENT CONDUCTING OXIDES
Chairs: S. Naemura and F. Funada

Related Symposium J: THIN FILMS FOR PHOTOVOLTAIC AND RELATED DEVICE APPLICATIONS

4:00 P.M. H4.1
BACKGROUND PRESSURE EFFECT IN SPUTTER DEPOSITION ON CHARACTERISTICS OF INDIUM TIN OXIDE THIN FILM, B.H. Lee, C.-H. Yi, I.G. Kim, S.-H. Lee and S.K. Kang, Samsung Display Devices Company, Ltd., Research and Development Center, Kyungki-Do, Korea.

4:15 P.M. H4.2
LOW RESISTIVITY TRANSPARENT INDIUM TIN OXIDE (ITO) FILMS SPUTTERED AT ROOM TEMPERATURE WITH H2O ADDITION, Ken-ichi Onisawa, Etsuko Nishimura, Masahiko Ando, Hitachi, Ltd., Hitachi Research Laboratory, Department of Imaging Devices, Hitachi-shi, Japan; Masaru Takabatake, Hitachi, Ltd., Electron Tube and Devices Division, Mobara-shi, Japan; and Tetsuroh Minemura, Hitachi, Ltd., Hitachi Research Laboratory, Department of Imaging Devices, Hitachi-shi, Japan.

4:30 P.M. H4.3
ATOMIC HYDROGEN EFFECTS ON THE OPTICAL AND ELECTRICAL PROPERTIES OF TRANSPARENT CONDUCTING OXIDES FOR FLAT PANEL DISPLAY, Je-Hsiung Lan and Ierzy Kanicki, University of Michigan, Display Technology and Manufacturing Center, Ann Arbor, MI.

4:45 P.M. H4.4
OPTICAL AND ELECTRICAL PROPERTIES OF Sb AND Bi DOPED TIN OXIDE FILMS DEPOSITED ON VARIOUS TYPES OF GLASS SUBSTRATES, V. Foglietti, Instituto di Elettronica dello Stato Solido del CNR, Via Cineto, Roma, Italy; A. Galbato and P. Maltese, Universita' degli studi di Roma "La Sapiena" e Unita INFM, Via Eudossiana, Roma, Italy.

SESSIION H5: POLYSILICON THIN FILM TRANSISTORS I
Chairs: M.K. Hatalis and W.A. Anderson
Wednesday Morning, April 10
Golden Gate C1

8:30 A.M. *H5.1
LOW TEMPERATURE POLYSILICON DEVICES AND CIRCUITS, D. Pribat, F. Plais, P. Legagneux, C. Reita, F. Petinot and O. Huet, Thompson CSF, LCR, Orsay, France.

9:00 A.M. H5.2
SINGLE-CRYSTAL Si TFT IN ULTRA-LARGE GRAIN Si FILM ON GLASSY SUBSTRATE, R. Ishihara and M. Matsumura, Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan.

9:15 A.M. H5.3
ELECTRICAL PERFORMANCE OF AN N-CHANNEL TFT FABRICATED ON A QUARTZ SUBSTRATE BY ZMR, Si-Woo Lee, Seung-Ki Joo, Seoul National University, Department of Metallurgical Engineering, Seoul, Korea; and In-Gon Lim, LG Electronics Research Center, Device and Material Laboratory, Seoul, Korea.

9:30 A.M. H5.4
LOW TEMPERATURE DEPOSITION OF POLYCRYSTALLINE SILICON FOR THIN FILM TRANSISTORS, J. Jang, B.Y. Ryu and J.I. Ryu, Kyung Hee University, Department of Physics, Seoul, Korea.

9:45 A.M. H5.5
PERFORMANCE OF POLY-Si TFTS WITH DOUBLE GATE OXIDE LAYERS, B.H. Min, C.M. Park, J.H. Jun, K.Y. Choi, H.S. Choi and M.K. Han, Seoul National University, Department of Electrical Engineering, Seoul, Korea.

10:00 A.M. H5.6
HELICAL RESONATOR PLASMA OXIDATION OF AMORPHOUS SILICON FOR FLAT PANEL DISPLAYS, Sita R. Kaluri, Dennis W. Hess, Lehigh University, Chemical Engineering Department, Bethlehem, PA; and Miltiadis K. Hatalis, Lehigh University, EECS Department, Bethlehem, PA.

10:15 A.M. BREAK

SESSION H6: POLYSILICON THIN FILM TRANSISTORS II
Chairs: W.A. Anderson and M.K. Hatalis

10:45 A.M. *H6.1
LOW ENERGY ION DOPING TECHNOLOGY FOR POLY-Si TFTS, Akio Mimura, Hitachi Research Laboratory, Department of Imaging Devices, Ibaraki-Ken, Japan.

11:15 A.M. H6.2
FORMATION OF SOURCE/DRAIN BY ION MASS DOPING FOR POLY-Si TFTs, Duck-Kyun Choi, Jin-Young Yoon, Hanyang University, Department of Inorganic Material Engineering, Seoul, Korea; Tae-Hyung Lu, Seung-Ki Joo, Seoul National University, Department Metallurgical Engineering, Seoul, Korea.

11:30 A.M. H6.3
NOVEL N2O PLASMA PASSIVATIONS ON POLY-SILICON THIN-FILM TRANSISTORS, H.C. Chen, F.S. Wang and C.Y. Huang, National Chiao-Tung University, Department of Electronic Engineering, Hsinchu, Taiwan.

11:45 A.M. H6.4
POLYSILICON THIN FILM TRANSISTORS WITH SILICIDE SOURCE AND DRAIN CONTACTS, Greg Sarcona anmd Miltiadis K. Hatalis, Lehigh University, Display Research Laboratory, EECS Department, Bethlehem, PA.

SESSION H7: AMORPHOUS SILICON THIN FILM TRANSISTORS
Chairs: A. Mimura and D. Pribat
Wednesday Afternoon, April 10
Golden Gate C1

Related Symposium: A: AMORPHOUS SILICON TECHNOLOGY - 1996

1:30 P.M. *H7.1
TBD

2:00 P.M. H7.2
HIGH-RATE DEPOSITED AMORPHOUS MATERIALS FOR THE HYDROGENATED AMORPHOUS SILICON THIN FILM TRANSISTOR STRUCTURES, Tong Li, Chun-Ying Chen, Jerzy Kanicki, University of Michigan, Department of Electrical Engineering and Computer Science, Center for Display Technology and Manufacturing, Ann Arbor, MI; and Charles Malone, Optical Imaging Systems, Inc., Northville, MI.

2:15 P.M. H7.3
LOW TEMPERATURE FABRICATION OF THIN FILM TRANSISTORS BY DC REACTIVE MAGNETRON SPUTTERING, C.S. McCormick and J.R. Abelson, University of Illinois, Materials Science Department and The Coordinated Science Laboratory, Urbana, IL.

2:30 P.M. H7.4
INFLUENCE OF THE DENSITY OF STATES AND TEMPERATURE-DEPENDENT CONTACT RESISTANCE ON THE FIELD-EFFECT ACTIVATION ENERGY IN a-Si:H TFT, Chun-Ying Chen and Jerzy Kanicki, University of Michigan, Department of Electrical Engineering and Computer Science, Ann Arbor, MI.

2:45 P.M. H7.5
INVESTIGATION OF THE OFF-CURRENT IN AMORPHOUS SILICON THIN FILM TRANSISTORS FOR SiO2 AND SiNx GATE INSULATORS, Jeong Hyun Kim, Woong Sik Choi and Chan Hee Hong, Large Electronics Inc., Anyang Shi, Korea.

3:00 P.M. H7.6
LOW TEMPERATURE GROWTH OF MICROCRYSTALLINE SILICON FROM SiF4, Yu Chen and S. Wagner, Princeton University, Princeton, NJ.

3:15 P.M. BREAK

SESSION H8: NEW POLYSILICON PROCESSES
Chairs: D. Pribat and A. Mimura

3:45 P.M. H8.1
SOLUTION GROWN POLYSILICON FOR FLAT PANEL DISPLAYS, Wayne Anderson and Richard Wallace, State University of New York at Buffalo, Department of Electrical and Computer Engineering, Amherst, NY.

4:00 P.M. H8.2
COPPER-ENHANCED SOLID PHASE CRYSTALLIZATION OF AMOUPHOUS SILICON FILMS, Dong Kyun Sohn, Dae Gyu Moon and Byung Tae Ahn, Korea Advanced Institute of Science and Technology, Department of Materials Science and Engineering, Taejon, Korea.

4:15 P.M. H8.3
SOLID-PHASE CRYSTALLIZATION OF a-(Si0.69Ge0.31/Si) and a-(Si/0.69Ge0.31/Si) BILAYER FILMS ON SiO2, Tae-Hoon Kim, Myung-Kwan Ryu, Jin-Won Kim, Ki-Bum Kim, Seoul National University, Department of Metallurgical Engineering, Seoul, Korea; and Chang-Soo Kim, Korea Research Institute of Standards Science, Taejeon, Korea.

4:30 P.M. H8.4
INVESTIGATION OF THE DEPOSITION AND CHARACTERIZATION OF THE STRUCTURE OF as-DEPOSITED AND CRYSTALLIZED POLYCRYSTALLINE SixGe1-x THIN FILMS, Tolis Voutsas, Sharp Microelectronics Technology, Corporate Strategic Engineering Center, Camas, WA; and John Grant, Sharp Microelectronics Technology, IC Process Technology, Camas, WA.

4:45 P.M. H8.5
INFLUENCE OF LIGHT ON THE SOLID PHASE CRYSTALLIZATION OF AMORPHOUS SILICON, Reece Kingi, Stephen Fonash, Pennsylvania State University, Department of Electronic Materials and Processing Research Laboratory, University Park, PA; John Mehlhaff and Howard Hovagimian, Intevac RTP Systems, Rocklin, CA.

5:00 P.M. H8.6
SELECTIVE DEPOSITION OF POLYSILICON AT LOW TEMPERATURE BY HOT-WIRE CVD, Shuangying Yu, Erdogan Gulari, University of Michigan, Department of Chemical Engineering, Ann Arbor, MI; and Jerzy Kanicki, University of Michigan, Department of Electrical Engineering and Computer Science, Center for Display Technology and Manufacturing, Ann Arbor, MI.

SESSION H9: ORGANIC ELECTROLUMINESCENT
MATERIALS AND DISPLAYS I
Chairs: J. Kanicki and C. Tang
Thursday Morning, April 11
Golden Gate C1

8:30 A.M. *H9.1
STABLE ORGANIC ELECTROLUMINESCENT DEVICES, C.W. Tang, S.A. Van Slyke, J. Shi, C.H. Chen, Eastman Kodak Company, Imaging Research and Advanced Development, Rochester, NY.

9:00 A.M. H9.2
AROMATIC AMINE-CONTAINING POLYMERS FOR ORGANIC ELECTROLUMINESCENT DEVICES, Junji Kido, Gaku Harada, Hiromasa Ohta and Katsutoshi Nagai, Yamagata University, Department of Materials Science and Engineering, Yamagata, Japan.

9:15 A.M. H9.3
FULL-COLOR DISPLAYS MADE WITH LIGHT-EMITTING ELECTROCHEMICAL CELLS, G. Yu, Q. Pei, C. Zhang, Y. Cao, Y. Yang and A.J. Heeger, UNIAX Corporation, Santa Barbara, CA.

9:30 A.M. H9.4
LOW-VOLTAGE, HIGH-BRIGHTNESS POLYMER LIGHT-EMITTING DIODES WITH LONG STRESS LIFE, G. Yu, C. Zhang, Q. Pei, Y. Cao, Y. Yang and A.J. Heeger, UNIAX Corporation, Santa Barbara, CA.

9:45 A.M. H9.5
(ABSTRACT WITHDRAWN)

10:00 A.M. H9.6
ELECTRON INJECTION EFFECTS IN ELECTROLUMINESCENT DEVICES USING POLYMER BLEND THIN FILMS, C.C. Wu, J.C. Sturm, R.A. Register, Princeton University, Advanced Technology Center for Photonic and Optoelectronic Materials, Princeton, NJ; and M.E. Thompson, University of Southern California, Los Angeles, Department of Chemistry, Los Angeles, CA.

10:15 A.M. BREAK

SESSION H10: ORGANIC ELECTROLUMINESCENT
MATERIALS AND DISPLAYS II
Chairs: C. Tang and J. Kanicki

10:45 A.M. H10.1
POLY(BITHIAZOLES): A NEW CLASS OF POLYMERS FOR LIGHT-EMITTING DIODES, David Curtis, Jeffrey K. Politis, John Nanos and Jerzy Kanicki, University of Michigan, Department of Electrical Engineering and Computer Science, Ann Arbor, MI.

11:00 A.M. H10.2
VOLTAGE CONTROLLABLE TWO-COLOR LIGHT-EMITTING ELECTRO-CHEMICAL CELLS, Yang Yang, Qibing Pci, Alan J. Heeger, UNIAX Corporation, Santa Barbara, CA.

11:15 A.M. H10.3
INDOLOINDOLE-BASED ORGANIC LIGHT-EMITTING DIODES, S.J. Jacobs, T.P. Pollagi, M.B. Sinclair, Sandia National Laboratories, Albuquerque, NM; R.D. Scurlock and P.R. Ogilby, University of New Mexico, Department of Chemistry, Albuquerque, NM.

11:30 A.M. H10.4
CORE-LEVEL PHOTOABSORPTION SPECTROSCOPY OF MEH-PPV, D.G.J. Sutherland, Lawrence Berkeley Laboratory, Berkeley, CA; K. Pakbaz, L.J. Terminello, S.C. Williams, Lawrence Livermore National Laboratory, Livermore, CA; T.A. Callcott, University of Tennessee, Department of Physics, Knoxville, TN; J.A. Carlisle, Lawrence Livermore National Laboratory, Livermore, CA; D.L. Ederer, Tulane University, Department of Physics, New Orleans, LA; F.J. Himpsel, University of Wisconsin, Department of Physics, Madison, WI; and I. Jimenez, Lawrence Berkeley Laboratory, Berkeley, CA.

11:45 A.M. H10.5
SYNTHESIS AND CHARACTERIZATION OF MOLECULAR AND POLYMERIC MATERIALS FOR UTILIZATION IN ELECTROLUMINESCENT CONJUGATED ORGANIC POLYMERS AND MOLECULARLY DOPED POLYMER DEVICES, G.A. Fox, P.E. Elliker, A.M. Murray and R.W. Pekala, Lawrence Livermore National Laboratory, Chemistry and Material Science Department, Livermore, CA.

SESSION H11: FIELD EMISSION DISPLAYS
Chairs: B.K. Wagner and E.T. Goldburt
Thursday Afternoon, April 11
Golden Gate C1

1:30 P.M. *H11.1
THE EFFECT OF TECHNOLOGY AND MATERIALS CHOICE ON FIELD EMISSION DISPLAY PERFORMANCE, Marko M.G. Slusarczuk, Silicon Video Corporation, San Jose, CA.

2:00 P.M. H11.2
EMISSION CHARACTERISTICS OF THE MO-COATED SILICON TIPS, Heung-Woo Park, Byeong-Kwon Ju, Jung-Ho Park, Myung-Hwan Oh, KIST, Department of Information and Electronics, Seoul, Korea; In-Jae Chung and M.R. Hascard, University of South Australia, Microelectronics Centre, Level Campus, Australia.

2:15 P.M. H11.3
TiC THIN FILMS FOR FIELD EMITTER FLAT PANEL DISPLAYS, R.F. Greene, R. Tsu, M. Hasan, K. Daneshvar, J. Miller and J. Chaffin, University of North Carolina at Charlotte, Charlotte, NC.

2:30 P.M. H11.4
STUDY ON THE DIAMOND FIELD EMITTER FABRICATED BY TRANSFER MOLD TECHNIQUE, Byeong-Kwon Ju, Seong-Jin Kim, Jae-Hoon Jung, KIST, Division Electronics and Information Technology, Seoul, Korea; Beom Soo Park, Young-Joon Baik, KIST, Division Ceramics, Seoul, Korea; Sung-Kvoo Lim, Dankook University, Division Electronics Engineering, Cheonan, Korea; Sung-Kvoo Lim, Dankook University, Division Electronics Engineering, Cheonan, Korea; and Myung-Hwan Oh, Kist, Division Electronics and Information technology, Seoul, Korea.

2:45 P.M. H11.5
ELECTRON EMISSION FROM DIAMOND AND CARBON NITRIDE GROWN BY HOT FILAMENT CVD OR Cs+ ION GUN SPUTTER DEPOSITION SYSTEM, Eung Joon Chi, Jae Yeob Shim, Soon Joon Rho and Hong Koo Baik, Yonsei University, Department of Metallurgical Engineering, Seoul, Korea.

3:00 P.M. H11.6
PROPERTIES OF DIAMOND-LIKE CARBON FOR THIN FILM MICROCATHODES FOR FIELD EMISSION DISPLAYS, J. Robertson and W.I. Milne, Cambridge University, Engineering Department, Cambridge, United Kingdom.

3:15 P.M. BREAK

SESSION H12: FIELD EMISSION PHOSPHORS
Chairs: E.T. Goldburt and B.K. Wagner

3:45 P.M. *H12.1
TBD

4:15 P.M. H12.2
PHOSPHOR SYNTHESIS ROUTES AND THEIR EFFECT ON THE PERFORMANCE OF GARNET PHOSPHORS AT HIGH AND LOW VOLTAGES, L.E. Shea, J. McKittrick, University of California, San Diego, Department of Applied Mechanics and Engineering Sciences and Materials Science Program, La Jolla, CA; and M.L.F. Phillips, Sandia National Laboratories, Albuquerque, NM.

4:30 P.M. H12.3
CHARACTERIZATION OF Y2SiO5:Ce, YAG:Tb AND YAG:Eu RGB PHOSPHOR TRIPLET FOR FIELD EMISSION DISPLAY APPLICATION, A.A. Talin, T.E. Felter, M.E. Malinowski, K.D. Stewart, Sandia National Laboratories, Livermore, CA; A.G. Chakhovskoi, J.T. Trujillo and C.E. Hunt, University of California, Davis, Department of Electrical and Computer Engineering, Davis, CA.

4:45 P.M. H12.4
CHARACTERIZATION OF LOW-VOLTAGE PHOSPHOR SCREENS FOR FED APPLICATIONS, B.S. Jeon, J.S. Yoo, Chung-Ang University, Department of Chemical Engineering, Seoul, Korea; and J.D. Lee, Seoul National University, School of Electronics Engineering, Seoul, Korea.

5:00 P.M. H12.5
NATURE OF THE GREEN LUMINESCENT CENTER IN ZnO, K. Vanheusden, W.L. Warren, C.H. Seager, D.R. Tallant and J.A. Voigt, University of New Mexico, Sandia National Laboratories, Albuquerque, NM; B.E. Gnade, Texas Instruments Inc., Dallas, TX.

SESSION H13: POSTER SESSION:
Thursday Evening, April 11
8:00 P.M.
Presidio Ballroom

THIN FILM TRANSISTORS

H13.1 POLYCRYSTALLINE SILICON FILMS FORMED BY SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS SILICON: THE SUBSTRATE EFFECTS ON CRYSTALLIZATION KINETICS AND MECHANISM, Y.-H. Song, S.-Y. Kang, K.I. Cho, H.J. Yoo, Electronics and Telecommunications Research Institute, Taejon, Korea; J.H. Kim and J.Y. Lee, Electronics and Telecommunications Research Institute, Department of Materials Science and Engineering, Taejon, Korea.

H13.2 A NEW REVERSIBLE DEPASSIVATION/PASSIVATION MECHANISM IN POLYCRYSTALLINE SILICON, Vyshnavi Suntharalingam and Stephen J. Fonash, Pennsylvania State University, Electronic Materials & Processing Research Lab, University Park, PA.
H13.3 TMCTS FOR GATE DIELECTRIC IN THIN FILM TRANSISTORS, Albert W. Wang, Navakanta Bhat and Krishna C. Saraswat, Stanford University, Department of Electrical Engineering, Stanford, CA.

H13.4 A NOVEL TECHNIQUE FOR IN-SITU MONITORING OF CRYSTALLINITY AND TEMPERATURE DURING RAPID THERMAL ANNEALING OF THIN Si/Si-Ge FILMS ON QUARTZ/GLASS, Vivek Subramanian, F. Levent Degertekin, Paul Dankoski, Butrus T. Khuri-Yakub, Krishna C. Saraswat, Stanford University, Department of Electrical Engineering, Stanford, CA.

H13.5 EFFECT OF ANNEALING AMBIENT ON PERFORMANCE AND RELIABILITY OF LPCVD OXIDES FOR TFTS, Vanakanta Bhat, Albert Wang and Krishna Saraswat, Stanford University, Department of Electrical Engineering, Stanford, CA.

H13.6 HIGH PERFORMANCE LASER ANNEALED POLY-Si TFTs WITH A HIGH QUALITY GATE OXIDE DEPOSITED BY PECVD, Moon-Youn Jung, Sung-Mo Seo, Yun-Ho Jung, Dae-Gyu Moon and Hoe-Sub Soh, LG Electronics Inc., LCD R&D Center, Kyoungki-Do, Korea.

H13.7 AC AND DC CHARACTERIZATION AND SPICE MODELING OF SHORT CHANNEL POLYSILICON TFTs, M.D. Jacunski, M.S. Shur, T. Ytterdal, A.A. Owusu, University of Virginia, Charlottesville, VA; and M. Hack, Xerox Palo Alto Research Center, Palto Alto, CA.

H13.8 APPROACHES TO MODIFYING SOLID PHASE CRYSTALLIZATION KINETICS FOR a-Si FILMS, Reece Kingi, Yaozu Wang, Stephen Fonash, Osama Awadelkarim, Pennsylvania State University, Department of Materials and Processing Research Laboratory, University Park, PA; and Yuan-Min Li, Solarex Corporation, Newton, PA.

H13.9 EFFECTS OF GERMANIUM ON GRAIN SIZE AND SURFACE ROUGHNESS OF THE SOLID PHASE CRYSTALLIZED POLYCRYSTALLINE, Jin-Won Kim, Myung-Kwan Ryu, Tae-Hoon Kim, Ki-Bum Kim and Sang-Joo Kim, Seoul National University, Department of Metallurgical Engineering, Seoul, Korea.

H13.10 MATERIAL PROPERTIES OF SIPOS FILMS PREPARED BY XeCl EXCIMER LASER ANNEALING OF a-Si:Nx FILMS, H.S. Choi, K.H. Jang, B.H. Min and M.K. Han, Seoul National University, Department of Electrical Engineering, Seoul, Korea.

H13.11 THE POLY-Si TFTS FABRICATED BY NOVEL OXIDATION METHOD WITH INTERMEDIATE OXIDE, C.M. Park, B.H. Min and M.K. Han, Seoul National University, Department of Electrical Engineering, Seoul, Korea.

H13.12 IMPROVEMENT OF POLY-SILICON THIN FILMS AND TFTS USING ULTRASOUND TREATMENT, S. Ostapenko, J. Lagowski, L. Jastrzebski, University of South Florida, Center for Microelectronics Research, Tampa, FL; R. Smeltzer, David Sarnoff Research Center, Princeton, NJ.

H13.13 DEVICE CHARACTERISTICS OF POLY-SILICON THIN FILM TRANSISTOR FABRICATED BY MILC AT LOW TEMPERATURE, Seok-Woon Lee and Seung-Ki Joo, Seoul National University, Department of Metallurgical Engineering, Seoul, Korea.

H13.14 ECR PLASMA OXIDATION OF AMORPHOUS SILICON FOR IMPROVEMENT OF THE INTERFACE STATE IN A POLY SILICON THIN FILM TRANSISTOR, Tae-Hyung Ihn, Seoul National University, Department of Metallurgical Engineering, Seoul, Korea; Yoo-Chan Jeon, LG Semicon Corporation Ltd., Cheongiu, Korea; and Seung-Ki Joo, Seoul National University, Department of Metallurgical Engineering, Seoul, Korea.

H13.15 NANOSTRUCTURE AND ELECTRICAL PROPERTIES OF ANODIZED Al GATE INSULATORS FOR THIN-FILM TRANSISTORS, Satoshi Tsuji, Arai Toshiaki and Hiromasu Yasunobu, IBM Japan, Ltd., Kanagawa, Japan.

H13.16 TFTs MADE BY ELECTROPHOTOGRAPHIC PATTERING, H. Gleskova, E.Y. Ma, S. Wagner, Princeton University, Department of Electrical Engineering, Princeton, NJ; and D.S. Shen, University of Alabama, Huntsville, AL.

H13.17 IMPROVED a-Si:H TET PERFORMANCES USING a-SixN1-x/a-SixC1-x STACK DIELECTIRCS, G. Lavareda, E. Fortunato, N. Carvalho and R. Martins, FCT-UNI/CEMOP-UNINOVA, Monte de Caparica, Portugal.

LIQUID CRYSTAL DISPLAY MATERIALS AND PROCESSES

H13.18 Cr/Cr COMPOUND BILAYERED THIN FILM BLACK MATRIX FOR LCD COLOR FILTER, Byung Hak Lee, Iee Gon Kim, Si-Hyun Lee and Sung Ki Kang, Samsung Display Devices Company, Ltd., Research and Development Center, Kyungki-Do, Korea.

H13.19 OPTIMIZED MATERIALS FOR A NEW REFLECTIVE COLOR LCD, Wu Sheng, Guo Jianxin, Huang Ximin, Changchun Institute of Physics, Liquid Crystal Department, Changchun, China.
H13.20 LIQUID CRYSTALLINE FERROELECTRIC POLYMER FILMS, I. Sage, K. Blackwood, DRA Electronics Sector, Worcestershire, United Kingdom; M. Verrall, D. Coates, Merck Ltd., Dorset, United Kingdom.

H13.21 COLOR ALIGNMENT LAYER FOR LDC, Hai Jing, Changchun Institute of Physics Chinese Academy of Sciences, Department of Liquid Crystal Laboratory, Changchun, China.

H13.22 STUDIES OF THERMAL STABILITY OF RUBBED POLYMIDE ALIGNING LAYER, Qingbing Wang, Zhenjun Ma and Kai Ma, Changchun Institute of Physics, Chinese Academy of Science, LC Laboratory, Changchun, China.

H13.23 THE STUDY OF THE LIQUID CRYSTAL ALIGNMENT CHARACTERISTICS, Jianxin Guo, Sheng Wu, Weishong Zhao, Ruipeng Sun, Zhenjun Ma, Ximin Huang, Changchun Institute of Physics, Chinese Academy of Sciences, Liquid Crystal Laboratory, Changchun, China.

H13.24 HYDROXYL AND ESTER FUNCTIONAL GROUP CONTRIBUTIONS IN LIQUID CRYSTAL ALIGNMENT, Jean Yang and Curtis W. Frank, Stanford University, Department of Chemical Engineering, Stanford, CA.

H13.25 CRYSTALLIZATION KINETICS OF AMORPHOUS Sn-DOPED INDIUM OXIDE (ITO) THIN FILMS STUDIED USING TIME-RESOLVED REFLECTIVITY AND IN SITU TEM TECHNIQUES, C.W. Ow-Yang, D. Spinner, Brown University, Division of Engineering, Providence, RI; Y. Shigesato, University of Tokyo, Institute of Industrial Science, Tokyo, Japan; and D.C. Paine, Brown University, Division of Engineering, Providence, RI.

H13.26 A NEW BUMP CHIP TECHNOLOGY WITH A FOCUS ON FLAT PANEL DISPLAYS, Everett Canning, Ranjan Dutta, AT&T Bell Laboratories, Princenton, NJ.

EMMISIVE DISPLAYS

H13.27 IN-PLANE TRANSIENT PHOTOCONDUCTIVITY IN CONJUGATED POLYMERS, R. Schwarz, S. Grebner, Technical University of Munich, Department of Physics, Garching, Germany; W. Rieß, M. Meier and M. Schwoerer, University of Bayreuth, Department of Physics and Bayreuth Institute for Macromolecular Research (BIMF), Bayreuth, Germany.

H13.28 COLOR-VARIABLE LIGHT-EMITTING DIODE USING Tb³⁺ COMPLEX, Gang Sun, Chinese Academy of Sciences, Changchun Institute of Physics, Changchun, China.

H13.29 AN ORGANIC LUMINESCENT DIODE WITH SHARPER EMITTING BAND OF RARE EARTH ION, Gang Sun, Chinese Academy of Sciences, Changchun Institute of Physics, Changchun, China.

H13.30 TiO2:Ce/CeO2 HIGH PERFORMANCE INSULATORS FOR THIN FILM ELECTROLUMINESCENT DEVICES, A. Bally, K. Prasad, R. Sanjinés, P.E. Schmid, F. Lévy, EPFL, Institute of Applied Physics, Lausanne, Switzerland; J. Benoit, C. Barthou and P. Benalloul, Université P. et M. Curie, Laboratoire d'Acoustique et Optique de la Matiére Condensée, Paris, France.

H13.31 DEGRADATION MECHANISMS AND VACUUM REQUIREMENTS FOR FED PHOSPHORS, Paul H. Holloway, J. Sebastian, T. Trottier, S. Jones and H. Swart, University of Florida, Department of Materials Science and Engineering, Gainsville, FL.

H13.32 AN INVESTIGATION OF THE MICROSTRUCTURAL EVOLUTION OF Zn2SiO4:Mn AND ITS EFFECT ON THE LUMINESCENCE CHARACTERISTICS, Peter Mascher, McMaster University, Centre for Electrophotonic Materials and Devices, Hamilton, Canada; G.A. Sloka and A.H. Kitai, McMaster University, Department of Engineering Physics, Hamilton, Canada.

H13.33 METAL THIOCARBOXYLATES AS PRECURSORS FOR METAL SULFIDES, Klaus Kunze and Mark J. Hampden-Smith, University of New Mexico, Department of Chemistry and Center for Micro-Engineered Ceramics, Albuquerque, NM.

H13.34 FORMATION OF GALLIUM SULFIDE THIN FILMS FROM SINGLE-SOURCE PRECURSORS BY AEROSOL-ASSISTED CHEMICAL VAPOR DEPOSITION (AACVD), Guihua Shang and Mark J. Hampden-Smith, University of New Mexico, Department of Chemistry and Center for Micro-Engineered Ceramics, Albuquerque, NM.

H13.35 NEGATIVE ION RESPUTTERING EFFECTS OF rf MAGNETRON SPUTTER DEPOSITED OF CaxSr1-xGa2S4:Ce THIN FILM ELECTROLUMINESCENT (TFEL) PHOSPHOR, Lance S. Robertson, Scott W. Bailey, Philip D. Rack and Paul H. Holloway, University of Florida, Department of Materials Science and Engineering, Gainesville, FL.

H13.36 THE USE OF SPRAY PYROLYSIS IN THE CONTROL OF MICROSTRUCTURE AND RELATIONSHIP BETWEEN MICROSTRUCTURE AND PHOSPHORESCENCE IN ADVANCED PHOSPHOR POWDERS, James Caruso, Mark J. Hampden-Smith and Toivo T. Kodas, Nanochem Research, Inc., Albuquerque, NM.

H13.37 SYNTHESIS AND CHARACTERIZATION OF CONTROLLED MICROSTRUCTURE ZnO PHOSPHOR POWDERS BY SPRAY PYROLYSIS, James Caruso, Mark J. Hampden-Smith and Toivo Kodas, Nanochem Research, Inc., Albuquerque, NM; K. Vanheusden, C.H. Seager, D.R. Tallant and W.L. Warren, Sandia National Laboratories, Albuquerque, NM.

H13.38 OPTIMIZATION OF HEXA-ALUMINATE PHOSPHORS BY NOVEL PROCESSING AND Ga SUBSTITUTIONS, R. Roy, D. Ravichandran and W.B. White, Pennsylvania State University, Materials Research Laboratory, University Park, PA.

H13.39 PHOTOLUMINESCENCE PROPERTIES OF -DOPED ZnS:Mn GROWN BY METALORGANIC MOLECULAR BEAM EPITAXY, W. Park, T.K. Tran, W. Tong, S. Schön, B.K. Wagner and C.J. Summers, Georgia Institute of Technology, Phosphor Technology Center of Excellence, Manufacturing Research Center, Atlanta, GA.

H13.40 OPTIMIZATION AND RESOLUTION OF FED PHOSPHOR SCREENS, Fuli Zhang, Sen Yang, S.M. Jacobsen and C.J. Summers, Georgia Institute of Technology, Manufacturing Research Center, Atlanta, GA.

H13.41 SILICON TIP ARRAYS WITH DIFFERENT COVERS FOR FLAT PANEL DISPLAY APPLICATION, A.A. Evtukh, V.G. Litovchenko, R.I. Marchenko, M.I. Klyui and A. Semenovich, Institute of Semiconductor Physics, Physical Bases of Microelectronics, Kiev, Ukraine.

H13.42 PREPARATION OF SILICON AND DIAMOND TIP EMITTERS FOR FLAT PANEL DISPLAYS BY ION BEAM ETCHING, A.N. Stepanova, E.S. Mashkova, V.A. Molchanov and V.I. Muratova, Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia.

H13.43 GOLD OVERCOATINGS ON SPINDT-TYPE FIELD EMITTER ARRAYS, Stephen Skala, Coloray Display Corporation, Fremont, CA; Douglas A.A. Ohlberg, Alec A. Talin and Thomas E. Felter, Sandia National Laboratories, Livermore, CA.

H13.44 FIELD EMISSION FROM SILICON WHISKER ARRAYS, Douglas A.A. Ohlberg, Alec A. Talin and Thomas E. Felter, Sandia National Laboratories, Livermore, CA; and E.I. Givargizov, Institute of Crystallography, Moscow, Russia.

H13.45 DIAMOND FIBERS AS LINEAR ELECTRON EMITTERS FOR FLAT PANEL DISPLAYS, John W. Glesener and Arthur A. Morrish, Naval Research Laboratory, Optical Sciences Division, Washington, DC.

H13.46 PREPARATION OF SILICON-BASED FIELD EMISSION MATERIALS, Guang Yuan, Yixin Jin, Changhun Jin, Hang Song, Baolin Zhang, Yongqiang Ning, Hong Jiang, Tianming Zhou and Shuwei Li, Chinese Academy of Sciences, Changchun Institute of Physics, Changchun, China.

H13.47 THE STUDYING OF THE MECHANISM OF LOWERING THE ELECTRON WORK FUNCTION IN FILMS WITH DIFFERENT CARBON PHASES, O.E. Glukhova, Z.Ja. Kosakovskaya, Sh.T. Mevlyut, N.I. Sinitsyn, G.V. Torgashov, A.G. Veselov and A.I. Zhbanov, Russian Academy of Science, IRE, Saratov, Russia.

H13.48 ANALYSIS OF ELECTRON EMISSION MECHANISM FROM HFCVD DIAMOND ON TUNGSTEN TIP OR PATTERNED METAL LAYER, Jae Yeob Shim, Eung Joon Chi, Soon Joon Rho, and Hong Koo Baik, Yonsei University, Department of Metallurgical, Seoul, Korea.

H13.49 p-AlN:C/n-6H-SiC HETEROJUNCTION DIODES, Christopher I. Thomas and Michael Spencer, Howard University, MSRCE, Washington DC.

SESSION H14: ELECTROLUMINESCENT PHOSPHOR
Chairs: C. Summers and R. Ginerich
Friday Morning, April 12
Golden Gate C1

8:30 A.M. *H14.1
NEW DEVELOPMENTS IN ELECTROLUMINESCENT PHOSPHORS, B.K. Wagner, Georgia Institute of Technology, Phosphor Technology Center of Excellence, Atlanta, GA.

9:00 A.M. H14.2
IMPROVED GROWTH OF SrGa2S4 THIN FILM ELECTROLUMINESCENCE PHOSPHORS, H.W. Schock, T.A. Oberacker and D. Braunger, Universität Stuttgart, Institut für Physikalische Elektronik, Stuttgart, Germany.

9:15 A.M. H14.3
INVESTIGATION OF THE NUCLEATION AND GROWTH OF THIN-FILM PHOSPHORS, T.S. Moss, R.W. Springer and Robert C. Dye, Los Alamos National Laboratories, Los Almos, NM.

9:30 A.M. H14.4
PRECURSOR EFFECTS ON THE MOCVD OF SrS:Ce,M THIN FILMS, John A. Samuels, Kenneth Salazar, Kerry N. Siebein, David C. Smith, Los Alamos National Laboratory, Los Alamos, NM; Richard T. Tuenge and Christopher N. King, Planar Systems, Inc., Beaverton, OR.

9:45 A.M. H14.5
SYNTHESIS OF CdS, ZnS AND CdxZn1-xS FILMS BY AEROSOL-ASSISTED CHEMICAL VAPOR DEPOSITION (AACVD) OF NOVEL SINGLE-SOURCE PRECURSORS, May Nyman and Mark J. Hampden-Smith, University of New Mexico, Department of Chemistry, Albuquerque, NM.

10:00 A.M. H14.6
ELECTROLUMINESCENCE OF ZnS:Tm - REVISITED, Regina Mueller-Mach, Rene Helbing, Sophie Chantrenne, Krzysztof W. Nauka and Gerd O. Mueller, Hewlett Packard Laboratories, Electroluminescent Technology Department, Fremont, CA.

10:15 A.M. BREAK

SESSION H15: NANOCRYSTALLINE PHOSPHOR
Chairs: R. Ginerich and C. Summers

10:45 A.M. *H15.1
RARE EARTH DOPED NANOCRYSTALLINE PHOSPHORS FOR DISPLAYS, E.T. Goldburt and R.N. Bhargava, Nanocrystals Technology, Briarcliff Manor, NY.

11:15 A.M. H15.2
CdSe/ZnS QUANTUM DOT COMPOSITES FOR ELECTROLUMINESCENT DEVICES, J. Rodriquez-Viejo, B.O. Daboushi, M.G. Bawendi and K.F. Jensen, Massachusetts Institute of Technology, Cambridge, MA.

11:30 A.M. H15.3
OPTICAL STUDIES OF LUMINESCENT ZINC SELENIDE NANOCRYSTALS IN POTASSIUM BOROSILICATE GLASS MATRICES, Christine A. Smith, Subhash H. Risbud, University of California, Davis, Department of Material Science, Davis, CA; Howard W.H. Lee and J. Diane Cooke, Lawrence Livermore National Laboratory, Livermore, CA.

11:45 A.M. H15.4
SILICON-RICH SILICA: A STABLE ALTERNATIVE TO POROUS SILICON AS AN ELECTROLUMINESCENT MATERIAL, P. Trwoga, A.J. Kenyon and C.W. Pitt, University College London, Department Electronic and Electrical Engineering, London, United Kingdom.


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