Chairs

Stephen Campbell,University of Minnesota
Subramanian Iyer, SiBond
Ted Kamins, Hewlett-Packard Laboratories

Symposium Support

Office of Naval Research

*Invited Paper

SESSION F1: GROWTH AND STRUCTURE
Chairs: S.A. Campbell and E.A. Fitzgerald
Tuesday Morning, April 9
Sunset F

8:30 A.M. F1.1
IN-SITU RHEED OBSERVATION OF NUCLEATION AND SMOOTHENING OF {105} Si1-xGex/Si(001) SUPPERLATTICES IN UHV-CVD, D.E. Savage, S. Nayak, T.F. Kuech and M.G. Lagally, University of Wisconsin, Madison, WI.

8:45 A.M. F1.2
STRAIN STATUS AND SURFACE MORPHOLOGY OF SiGe HETERO-STRUCTURES, J.H. Li, G. Springholz, F. Schäffler and G. Bauer, Institut für Halbleiterphysik, Linz, Austria.

9:00 A.M. F1.3
TEMPERATURE DEPENDENCE OF THE INTERFACIAL ROUGHNESS IN Si/Si1-xGex SUPERLATTICES GROWN BY RAPID THERMAL UHV-CVD, S. Nayak, D.E. Savage, M.G. Lagally and T.F. Kuech, University of Wisconsin, Madison, WI.

9:15 A.M. F1.4
REDUCTION OF Ge SEGREGATION BY SURFACTANTS DURING GROWTH OF SiGe SINGLE QUANTUM WELLS, Hans Peter Zeindl, S. Nilsson, J. Klatt, D. Krüger and R. Kurps, Institute of Semiconductor Physics, Frankfurt, Germany.

9:30 A.M. F1.5
EFFECT OF Ge ON B SEGREGATION FROM Si1-xGex QUANTUM WELLS, P.E. Thompson, K. Hobart, Naval Research Laboratory, Washington, DC; D. Simons, National Institute of Standards and Technology, Gaithersburg, MD, M. Gregg, T. Kreifels, R. Hengehold and Y.K. Yeo, Air Force Institute of Technology, Wright Patterson AFB, OH.

9:45 A.M. F1.6
DOPANT SEGREGATION AND DIFFUSION ON SIGE SURFACES, J.F. Nützel, M. Holzmann and G. Abstreiter, Walter-Schottky-Institut, Garching, Germany.

10:00 A.M. BREAK

10:30 A.M. F1.7
ARSENIC INCORPORATION FROM ARSINE AND ITS SURFACE SEGREGATION BEHAVIOUR IN Si AND SiGe DURING GAS SOURCE MOLECULAR BEAM EPITAXY, M.-H. Xie, A.K. Lees, J.M. Fernández, J. Zhang and B.A. Joyce, Imperial College, IRC for Semiconductor Materials, London, United Kingdom.

10:45 A.M. F1.8
IN-SITU DOPED SIGE AND Si LAYERS DEPOSITED IN NARROW DEEP TRENCHES, G. Ritter, J. Schlote, B. Tillack, D. Wolansky, Ch. Quick and D. Krüger, Institute of Semiconductor Physics, Frankfurt (Oder), Germany.

11:00 A.M. F1.9
Si0.8Ge0.2 HETEROEPITAXIAL GROWTH ON Si(100) BY LASER INDUCED MELTING AND CRYSTALLIZATION OF AMORPHOUS LASER DEPOSITED THIN FILMS, R. Serna, A. Blasco, C.N. Afonso, Instituto de Optica, Madrid, Spain; C. Ballesteros, E.P.S., Universidad Carlos III de Madrid, Madrid, Spain; and T. Rodríguez, E.T.S.I. Telecomunicación, Madrid, Spain.

11:15 A.M. F1.10
GROWTH OF SILICON-GERMANIUM BULK CRYSTALS WITHOUT DISLOCATIONS, Juergen Wollweber and Detlev Schulz, Institut für Kristallzüchtung, Berlin, Germany.

11:30 A.M. F1.11
HYDROGEN PASSIVATION OF Si/SiGe HETEROSTRUCTURES, V. Vekatraman, M.N. Vijayaraghavan, Institute of Science, India, Department of Physics, Bangalore, India; Jim Sturn and C.W. Lin, Princeton University, Department of Electrical Engineering, Princeton, NJ.

11:45 A.M. F1.12
GROWTH KINETICS OF Si1-x-yGexCy ED MS ON Sr(100) WITH y>0.05 AND T=450-560deg.C, Harald Jacobsson, Nicole Herbots, Sean Hearne, Joan Xiang and Peihua Ye, Arizona State University, Department of Physics and Astronomy, Tempe, AZ.

SESSION F2/B4: STRAIN RELAXATION/DISLOCATIONS IN GeSi
Chair: D.W. Greve
Tuesday Afternoon, April 9
Sunset E

1:30 P.M. *F2.1/B4.1
RELAXED GeSi/Si: MATERIAL LIMITS, DETECTORS AND TEMPLATES, E.A. Fitzgerald, Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, MA.

2:00 P.M. *F2.2/B4.2
CORRELATION BETWEEN DISLOCATIONS AND ELECTRON TRANSPORT PROPERTIES IN Si/SiGe, K. Ismail, IBM T.J. Watson Research Center, Yorktown Heights, NY.

2:30 P.M. F2.3/B4.3
ELECTRICAL CONDUCTIVITY TYPE CONVERSION DUE TO STRAIN-RELAXATION RELATED DEFECTS IN GeSi/Si, P.N. Grillot, S.A. Ringel, Ohio State University, Electronic Materials and Devices Laboratory and Department of Electrical Engineering, Columbus, OH; E.A. Fitzgerald and J. Michel, Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, MA.

2:45 P.M. F2.4/B4.4
ELECTRICALLY ACTIVE DISLOCATION-RELATED STATES IN RELAXED SiGe LAYERS, P.M. Mooney, L.P. Tilly, C.P. D'Emic and J.O. Chu, IBM T.J. Watson Research Center, Yorktown Heights, NY.

3:00 P.M. BREAK

3:30 P.M. F2.5/B4.5
INFLUENCE OF MISFIT DISLOCATION INTERACTIONS ON PHOTOLUMINESCENCE SPECTRA OF SiGe ON PATTERNED Si, G.P. Watson, J.L. Benton, Y.H. Xie, AT&T Bell Laboratories, Murray Hill, NJ; and E.A. Fitzgerald, Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, MA.

3:45 P.M. F2.6/B4.6
ELECTRICAL ACTIVITY OF DISLOCATIONS IN SiGe/Si STRUCTURES, Martin Kitler, Institute of Halbleiter Physik, Frankfurt, Germany; and Victor Higgs, Bio-Rad, Semiconductor Division, Hertfordshire, United Kingdom.

4:00 P.M. F2.7/B4.7
DISLOCATION NUCLEATION IN STRAINED LAYER EPITAXY: A BRITTLE-TO-DUCTILE PHENOMENON? Steven Labovitz, David Pope, Pennsylvania State University, Department of Materials Science and Engineering, Philadelphia, PA; and Ya-Hong Xie, AT&T Bell Laboratories, Silicon Materials, Murray Hill, NJ.

4:15 P.M. F2.8/B4.8
REAL TIME MEASUREMENTS OF ELASTIC AND PLASTIC STRAIN KINETICS DURING SiGe MBE GROWTH, J.A. Floro, E. Chason and S.R. Lee, Sandia National Laboratories, Albuquerque, NM.

4:30 P.M. F2.9/B4.9
SOI-BASED COMPLIANT SUBSTRATES-A NEW APPROACH TO HETEROEPITAXY, S.S. Iyer, SiBond L.L.C., Hopewell Junction, NY; F.J. Guarin, IBM Microelectronics Division, Hopewell Junction, NY; Z. Yang and W.I. Wang, Columbia University, Department of Electrical Engineering, NY.

SESSION F3: SELECTIVE DEPOSITION AND
QUANTUM STRUCTURES
Chairs: D.G. Ast and K. Eberl
Wednesday Morning, April 10
Sunset F

8:30 A.M. F3.1
FACETING OF SIDEWALLS IN SELECTIVE EPITAXIAL GROWTH OF SI ON PATTERNED (110) SI SUBSTRATES, Qi Xiang, Shaozhong Li, Dawen Wang, Kang Wang, University of California, Electrical Department, Los Angeles, CA; Greg U'Ren and Mark Goorsky, University of California, Department of Materials Science and Engineering, Los Angeles, CA.

8:45 A.M. F3.2
SELECTIVE Si AND SiGe EPITAXY GROWN BY LPCVD WITHOUT THE USE OF CHLORINATED SOURCE GASES, Janet M. Bonar and Gregory P. Parker, University of Southampton, Electronics & C.S., Southampton, United Kingdom.

9:00 A.M. F3.3
GROWTH BY LPCVD OF STRAINED Si1-xGex/Si SUB-100 nm DOTS AND WIRES ON PATTERNED (001) SUBSTRATES, Lili Vescan, Christel Dieker, Abdelkader Souifí, Roger Loo and Paul Gartner, Institut für Schicht- und Ionentechnik (ISI), Forschungzentrum Jülich, Germany.

9:15 A.M. *F3.4
STRESSES IN STRAINED GeSi STRIPES AND QUANTUM STRUCTURES: CALCULATION USING THE FINITE ELEMENT METHOD AND DETERMINATION USING MICRO-RAMAN AND OTHER MEASUREMENTS, S.C. Jain and H.E. Maes, IMEC, Leuven, Belgium.

9:45 A.M. BREAK

10:15 A.M. F3.5
NORMAL INCIDENCE PHOTODIODE USING SELF-ORGANIZED GROWTH OF SiGe DOTS ON Si, P. Schittenhelm, C. Engel and G. Abstreiter, Walter-Schottky-Institut, Garching, Germany.

10:30 A.M. F3.6
MBE OF Ge QUANTUM-DOTS ON Si(110) SURFACES, M. Krishnamurthy, Bi-Ke Yang, Michigan Technology University, Houghton, MI; and Y-J. Li, Motorola Corporate Research Labs, Phoenix, AZ.

10:45 A.M. F3.7
CHARACTERIZATION OF Ge ISLANDS ON Si (100) GROWN BY CHEMICAL VAPOR DEPOSITION, E.C. Carr, T.I. Kamins, R.S. Williams, S.J. Rosner and K. Nauka, Hewlett-Packard Laboratories, Palo Alto, CA.

11:00 A.M. F3.8
DLTS STUDY OF SIGE QW WITH HIGH GE CONTENT, K. Schmalz, I.N. Yassievich, E.J. Collart, Institute of Semiconductor Physics, Frankfurt, Germany; and D.J. Gravesteijn, Phillips Research Laboratories, Eindhoven, Netherlands.

11:15 A.M. F3.9
LOCAL ELECTRIC FIELD EFFECT IN SiGe QW STRUCTURES, K. Schmalz, S. Nilsson, I.N. Yassievich, Institute of Semiconductor Physics, Frankfurt, Germany; Chung-Yen Chang and Wen-Chung Tsai, National Chiao-Tung University, Hsin-Chu, Taiwan.

11:30 A.M. F3.10
LOCAL STATES INDUCED IN SiGe QW BY B-DELTA DOPING, I.N. Yassievich, Ioffe Physico-Technical Institute, St. Petersburg, Russia; K. Schmalz, Institute of Semiconductor Physics, Frankfurt, Germany; K.L.Wang and Shawn Thomas, University of California, Department of Engineering, Los Angeles, CA.

SESSION F4: PROCESSING
Chairs: S.A. Iyer and S.C. Jain
Wednesday Afternoon, April 10
Sunset F

1:30 P.M. *F4.1
OXIDATION OF POLY-AND SINGLE-CRYSTALLINE Si-Ge FILMS, Dieter G. Ast, William Edwards, Cornell University, Department of Materials Science and Engineering, Ithaca, NY; and Ted Kamins, Hewlett Packard Palo Alto, CA.

2:00 P.M. F4.2
THE EFFECT OF FLUORINE ON THE DRY OXIDATION BEHAVIOR OF SiGe, S.J. Kilpatrick, R.J. Jaccodine, Lehigh University, Department of Materials Science and Engineering, Bethlehem, PA; and P.E. Thompson, Naval Research Laboratory, Washington, DC.

2:15 P.M. F4.3
TIME-RESOLVED MEASUREMENTS AND MODELING OF SOLID-PHASE EPITAXIAL REGROWTH DYNAMICS IN STRAINED GeSi ALLOYS, Xiaobiao Zeng and Michael O. Thompson, Cornell University, Department of Materials Science and Engineering, Ithaca, NY.

2:30 P.M. F4.4
EFFECTIVE DOPING OF PSEUDOMORPHIC GeSi LAYERS, Seongil Im and Marc Nicolet, California Institute of Technology, Department of Applied Physics, Pasadena, CA.

2:45 P.M. F4.5
FABRICATION OF LATERAL NPN-AND PNP-STRUCTURES FROM REMOTE DOPED Si/SiGe/Ge QUANTUM WELLS BY MEANS OF A FOCUSED LASER BEAM, M. Holzmann, P.B. Baumgartner, C. Engel, J.F. Nützel, G. Abstreiter, Technische Universität München, Walter Schottky Institut, Garching, Germany; and F. Schäffler, Daimler-Benz AG, Forschungsinstitut Ulm, Ulm, Germany.

3:00 P.M. BREAK

3:30 P.M. F4.6
DIFFUSION IN STRAINED AND RELAXED Si1-xGex, Per Kringhøj and Arne Nylandsted Larsen, University of Aarhus, Institute of Physics and Astronomy, Aarhus, Denmark.

3:45 P.M. F4.7
HIGH Ge FLUENCE ION BEAM PROCESSED SixGe1-x LAYERS DEFECT ANNIHILATION BY SILICIDATION, K. Kyllesbech Larsen, F. La Via, S. Lombardo, V. Raineri, CNR-IMETEM, Catania, Italy; R.A. Donaton, IMEC, Leuven, Belgium; and S.U. Campisano, CNR-IMETEM, Catania, Italy.

4:00 P.M. F4.8
ION BEAM SYNTHESIS OF CoSi2 LAYERS IN Si65Ge35 ALLOY, G. Curello, R. Gwilliam, M. Harry, B.J. Sealy, University of Surrey, Department of Electronic and Electrical Engineering, Surrey, United Kingdom; and T. Rodriguez, Civdad Universitaria, ESTI Telecomunicacion, Madrid, Spain.

4:15 P.M. F4.9
W-CONTACTS TO Si1-xGex,Si1-yCy AND Si1-x-yGexCy ALLOYS, M. Mamor, V. Aubry-Fortuna, G. Villaret, F. Meyer, D. Bouchier, Institut d'Electronique Fondamentale, CNRS, Université Paris Sud, Orsay, France; S. Bodnar and J.L. Regolina, France Telecom CNET, Meylan, France.

4:30 P.M. F4.10
Ti METALLIZATION OF Si1-xGex AND Si1-x-yGexCy STRAINED EPILAYERS GROWN ON Si, A. Eyal, R. Brener, R. Beserman, M. Eizenberg, Solid State Institute, Technion-Israel Institute of Technology, Haifa, Israel; Z. Atzmon, David J. Smith and J.W. Mayer, Arizona State University, Center for Solid State Science, Tempe AZ.

4:45 P.M. F4.11
DEGRADATION AND RECOVERY OF Si1-xGex DEVICES AFTER PROTON IRRADIATION, H. Ohyama, Kumamoto National College of Technology, Nishigoshi Kumamoto, Japan; J. Vanhellemont, IMEC, Leuven, Belgium; Y. Takami, Rikkyo University, Kanagawa, Japan; K. Hayama, Kumamoto National College of Technology, Nishigoshi Kumamoto, Japan; H. Sunaga, I. Nashiyama, Takasaki JAERI, Gunma, Japan; Y. Uwatoko, Saitama University, Saitama, Japan; J. Poortmans and M. Caymax, IMEC, Leuven, Belgium.

SESSION F5: POSTER SESSION
GeSi AND RELATED COMPOUNDS
Chairs: T.I. Kamins and S.S. Iyer
Wednesday Evening, April 10
8:00 P.M.
Presidio Ballroom

F5.1 Ge QUANTUM DOTS ON Si, Vladimir Markov, Alexandr Nikitorov, Institute of Semiconductor Physics, MBE, Novosibirsk, Russia.

F5.2 COMPARISON OF Co SILICIDATION ON SiGe AND SiGeC ALLOYS, R.A. Donaton, K. Maex, IMEC, Leuven, Belgium; A. Vantomme, Institut voor Kern- en Stralingsfysika, Leuven, Belgium; A. St. Amour, J.C. Sturm, Princeton University, Department of Electrical Engineering, Princeton, NJ.

F5.3 COMPARISON OF STRAIN AND DISLOCATION-DENSITY IN LARGE-AND SMALL-AREA Si1-xGex/Si(100) HETEROSTRUCTURES, B. Hollander, L. Vescan, St. Mesters, S. Wickenhauser and S. Mantl, KFA Julich GmbH, Institut fur Schicht- und Ionentechnik, Julich, Germany.

F5.4 VISIBLE PHOTOLUMINESCENCE FROM NANOCRYSTALLINE Ge PREPARED BY OXIDATION OF SiGe LAYERS, Valentin Craciun, Institute of Atomic Physics, Lasers Department, Bucharest, Romania; Pascal Andreazza, Chantal Boulmer-Leborgne, GREMI, University of Orleans, Faculte des Sciences, Orleans, France; Edward J. Nicholls, University of Hull, Applied Physics, Hull, United Kingdom; and Ian W. Boyd, University College London, Electronics and Electrical Engineering Department, London, United Kingdom.

F5.5 PHOTOLUMINESCENCE OF Ge1-xCx ALLOYS GROWN ON (100) Si SUBSTRATES, Al-Sameen T. Khan, Brad A. Orner, Paul R. Berger, James Kolodzey, University of Delaware, Department of Electrical Engineering, Newark, DE; Fernando J. Guarin, IBM Microelectronics Division, Hopewell Junction, NY; and Subramanian S. Iyer, SiBond L.L.C., Hopewell Junction, NY.

F5.6 LOW-TEMPERATURE (200deg.C) MBE GROWTH OF Ge1-xCx ALLOYS ON Si (100), Bi-Ke Yang, A.W. Mathews and M. Krishnamurthy, Michigan Technological University, Houghton, MI.

F5.7 CARBON EFFECTS ON THE BANDSTRUCTURE IN STRAINED Si1-yCy LAYERS GROWN PSEUDO-MORPHICALLY ON Si(001), Myeongcheol Kim, H.J. Osten, G. Lippert, S. Nilsson, Institute of Semiconductor Physics, Frankfurt, Germany.

F5.8 A COMPARISON OF ELECTRON MICROSCOPY TECHNIQUES FOR CHARACTERIZING SiGe LAYERS, T. Walther, C.B. Boothroyd, R.E. Dunin-Borkowski and C.J. Humphreys, University of Cambridge, Department of Materials Science and Metallurgy, Cambridge, United Kingdom.F5.9 OBSERVATION OF IMPURITY ENHANCED INTERMIXING IN Si1-xGe/Si QUANTUM WELL STRUCTURE, C.C. Li, K.Y. Hsieh, National Sun Yat-Sen University, Institute of Materials Science and Engineering, Kaohsiung, Taiwan; D.P. Wang, National Sun Yat-Sen University, Department of Physics, Kaosiung, Taiwan; W.C. Tsai and C.Y. Chang, National Chiaou Tung University, Institute of Electronics, Hsinchu, Taiwan.

F5.10 EPITAXIAL GROWTH OF Si(111) AT BURIED INTERFACES USING SOLID-METAL MEDIATED MOLECULAR BEAM EPITAXY (SMM-MBE), M.-A. Hasan, University of North Carolina, Department of Electrical Engineering, Charlotte, NC; J.E. Sundgren, University of Linköping, Physics Department, Linköping, Sweden; and I.E. Greene, University of Illinois, Department of Coordinated Science Laboratory, Urbana, IL.

F5.11 STRAINED SiGe CHANNELS OPTIMISATION FOR P TYPE MOSFET APPLICATIONS, L. Garchery, I. Sagnes, Y. Campidelli and P.-A. Badoz, France Telecom-Cnet, Meylan, France.

F5.12 PHOTOLUMINESCENCE INVESTIGATION OF INTERMIXING BY RTA IN "AS GROWN" AND "Si IMPLANTED" SiGe QUANTUM WELLS, H. Lafontaine, D. Labrie, National Researcfh Council of Canada, Ottawa, Canada; R.D. Goldberg, University of Western Ontario, London, Canada; D.C. Houghton, N.L. Rowell, G.C. Aers, S. Charbonneau, National Research Council of Canada, Ottawa, Canada; and I.V. Mitchell, University of Western Ontario, London, Canada.

F5.13 Ge CONCENTRATION PROFILE IN THE LEADING EDGE OF SiGe ALLOYS GROWN BY MBE, Glenn G. Jernigan, Phillip E. Thompson, Conrad L. Silvestre, Jim V. Lill, Karl D. Hobart, Naval Research Laboratory, Solid State Devices, Washington DC.

F5.14 CHARACTERIZATION OF SiGe MATERIALS BY SIMS, A.V. Li-Fatou, I.C. Ivanov, Charles Evans and Associates, Redwood City, CA.

F5.15 IN-SITU BORON DOPED POLYCRYSTALLINE SILICON-GERMANIUM FILMS FORMED ON SiO2 USING RAPID THERMAL CHEMICAL VAPOR DEPOSITION PROCESS, V.Z-O Li, M.R. Mirabedini, R.T. Kuehn, D. Gladden, D. Batchelor, D. Venables, K. Christenson, J.J. Wortman, M.C. Ozturk, D.M. Maher, North Carolina State University, Department of Electrical and Computer Engineering, Raleigh, NC.

F5.16 THE OPTOELECTRONIC PROPERTIES a-SiGe:H ALLOY DEPOSITED BY MAGNETRON ASSISTED SILANE DECOMPOSITION, V.Kh. Kudoynrova, N.A. Roguohev, J.T. Terukov, Ioffe Physico-Technical Institute, St. Petersburg, Russia; and E.I. Milichevich, M.V. Lomonosov State University, Moscow, Russia.

F5.17 CORRELATION BETWEEN ION CHANNELING MINIMUM YIELD AND DISLOCATION DENSITY OF HETEROEPITAXIAL Si1-xGexFILMS AS MEASURED BY ATOMIC FORCE MICROSCOPY, Harald Jacobsson, Nicole Herbots, Shawn Whaley and Joan Xiang, Arizona State University, Department of Physics and Astronomy, Tempe, AZ.

F5.18 ELECTRONIC PROPERTIES AND DIFFUSION BEHAVIOR OF Au AND Zn IN Si1-xGx ALLOYS, Hartmut Bracht, Axel Giese, Stephen Voss, Nicolaas A. Stolwijk, Institut fuer Metallforschung, Muenster, Germany; and Juergen Wollweber, Institut fuer Kristallzuechtung, Berlin, Germany.

F5.19 INTERFACES IN Si/Ge MULTILAYERS: EFFECT OF GROWTH TEMPERATURE, J.-M. Baribeau, R.W.G. Syme and D.J. Lockwood, Institute for Microstructural Sciences, National Research Council, Ottawa, Canada.

F5.20 XPD STUDY OF THE EARLY STATES OF Ge/Si(001) INTERFACE FORMATION, I. Davoli, R. Gunnella, M. De Crescenzi, Universita' di Camerino, Dip. di Fisica, INFM, Camerino, Italy.

F5.21 VERY HIGH MOBILITY IN P-TYPE Si/SiGe MODULATION-DOPED HETEROSTRUCTURES, Chun-Yen Chang, National Nano-Device Laboratory, Hsinchu, China; Wen-Chung Tsai, National Chlao Tung University and Institute of Electronics, Hsinchu, China; F.F. Fang, Center for Condensed Matter Sciences, Taipei, China; and Y.H. Chang, National Taiwan University, Department of Physics, Taipei, China.

F5.22 FABRICATION OF NANOSCALE SILICON WIRES BASED ON SiGe/Si HETEROSTRUCTURE, Jianlin Liu, Youdou Zheng, Y. Shi, F. Wang, Y. Lu, R. Zhang, S.L. Gu, P. Han, and L.Q. Hu, Nanjing University, Physics Department, Nanjing, China.

SESSION F6: PROPERTIES AND DEVICES
Chairs: T.I. Kamins and J. Sturm
Thursday Morning, April 11
Sunset F

PROPERTIES
8:30 A.M. *F6.1
IN-SITU AND POST DEPOSITION CHARACTERIZATION OF SiGe ALLOYS USING OPTICAL TECHNIQUES, C. Pickering, DRA Malvern, Malvern, United Kingdom.
9:00 A.M. F6.2
OBSERVED CONFINEMENT ALONG THE (111) DIRECTION IN Si/Si1-xGex (0.17<x<0.23) QUANTUM WELLS USING PHOTOREFLECTANCE, David J. Hall, University of Surrey, Department of Physics, Surrey, United Kingdom; and Roger T. Carline, Defence Research Agency, Worcestershire, United Kingdom.

9:15 A.M. F6.3
PHOTORESPONSE AND ABSORPTION MEASUREMENTS ON Si/Si1-xGex MULTI-QUANTUM WELL STRUCTURES GROWN ON (100) AND (110) Si, Michael R. Gregg, Robert L. Hengehold, David E. Weeks, Yung Kee Yeo, Air Force Institute of Technology, Department of Engineering Physics, WPAFB, OH; Philip E. Thompson, M. Fatemi, Naval Research Laboratory, Washington DC; and Conrad Silvestre, Naval Research Laboratory, ASEE Postdoctoral Fellow, Washington DC.

9:30 A.M. F6.4
SPECTROSCOPIC ELLIPSOMETRY AND BAND STRUCTURE OF Si1-x-yGexCy ALLOYS, Rüdiger Lange, Kelly E. Junge, Iowa State University, Department of Physic and Astronomy, Ames, IA; Anthony A. Affolder, Ames Laboratory, Department of Condensed matter Physics, Ames, IA; Stefan Zollner, Iowa State University, Department of Physics and Astronomy, Ames, IA; S.S. Iyer, SiBond LLC, Hopewell Junction, NY; A.P. Powell, ATMI, Danbury, CT; and K. Eberl, MPI-FKF, Stuttgart, Germany.

9:45 A.M. F6.5
MECHANICAL PROPERTIES OF Si-Ge, Si-Ge-C AND Si-Ge-B ALLOYS, B. Roos, H. Richter, J.J. Osten, B. Tillack, Institut für Halbleiterphysik, Frankfurt, Germany; J. Wollweber, Institut für Kristallzüchtung, Berlin, Germany; and A. Wanner, Max-Planck-Institut für Metallforschung, Stuttgurt, Germany.

10:00 A.M. BREAK

DEVICES

10:30 A.M. F6.6
A STUDY OF HALL AND FILED-EFFECT MOBILITIES IN AQ Si/Si0.8Ge0.2 P-CHANNEL MOS HETEROSTRUCTURE, Robert J.P. Lander, C. John Ameleus, Evan C.H. Parker, Terrance E. Whall, University of Warwick, Department of Physics, Coventry, United Kindogm; Gary P. Kennedy, Roslina Sidek, Alan G. R. Evans, Microelectronics Group, Department of Electronics and Computer Science, Southampton, Uited Kingdom.

10:45 A.M. F6.7
OPTIMIZATION OF CRYSTAL GROWTH PARAMETERS FOR STRAINED Si LAYERS ON SiGe WITH HIGH ELECTRON MOBILITIES, H.P. Zeindl and P. Gaworzewski, Institute of Semiconductor Physics, Frankfurt, Germany.

11:00 A.M. F6.8
GeSi INFRARED DETECTORS, D.W. Greve, R. Strong, Carnegie Mellon University, Pittsburgh, PA; M. Weeks, P. Pellegrini, Rome Laboratories, Hanscom Air Force Base, MA.

11:15 A.M. F6.9
WAVEGUIDE/PHOTODETECTOR COMBINATION WITH Ge/Si/Si1-xGex QUANTUM WELLS FOR LONG WAVELENGTH OPERATION, Hartmut Presting, Oliver Brux, Daimler-Benz Research Center, Ulm, Germany; Thomas Zinke, Technical University of Berlin, Department of Electrical Engineering, Berlin, Germany; and Horst Kibbel, Daimler-Benz Research Center, Ulm, Germany.

11:30 A.M. F6.10
DARK CURRENTS OF P-SiGe INTERSUBBAND DETECTORS, R. Brederlow, J.F. Nützel and G. Abstreiter, Walter-Schottky-Institut, Garching, Germany.

11:45 A.M. F6.11
THE COMMERCIAL APPLICATIONS OF SiGe TECHNOLOGY, Robert A. Metzger and Marie Meyer, Compound Semiconductor Magazine, Saint Paul, MN.

SESSION F7: Si/Ge/C
Chairs: S.A. Campbell and C. Pickering
Thursday Afternoon, April 11
Sunset F

1:30 P.M. *F7.1
PROPERTIES OF PSEUDOMORPHIC Si1-yCy AND Si1-x-yGexCy ALLOY LAYERS ON Si, K. Eberl and K. Brunner, Max-Planck-Institut, Stuttgart, Germany.

2:00 P.M. *F7.2
OPTICAL AND ELECTRICAL PROPERTIES OF Si1-x-yGexCy STRUCTURES GROWN BY RTCVD, J.C. Storm, A. St. Amour, L.D. Laozerotti, C.L. Chang, Princeton University , Department of Electrical Engineering, Princeton, NJ; T. Lacroix and M.L. Thewalt, Simon Fraser University, Department of Physics, Buraby, Canada.

2:30 P.M. F7.3
EPITAXIAL SiGeC FILMS GROWN BY ATMOSPHERIC PRESSURE AND LOW PRESSURE CHEMICAL VAPOR DEPOSITION, James R. Dekker, University of California Davis, Department of Chemical Engineering and Material Sciences, Davis, CA; McDonald Robinson, Lawrence Semiconductor Laboratory, Tempe, AZ; and Charles E. Hunt, University of California, Department of Electrical and Computer Engineering, Davis, CA; Richard C. Westhoff, Lawrence Semiconductor Laboratory, Tempe, AZ.

2:45 P.M. F7.4
UHV-CVD GROWTH OF HETEROEPITAXIAL Ge1-xCx ALLOYS ON SILICON USING NOVEL DEPOSITION CHEMISTRY, Michael Todd, David J. Smith and John Kouvetakis, Arizona State University, Department of Chemistry and Biochemistry, Tempe, AZ.

3:00 P.M. BREAK

3:30 P.M. F7.5
STRAIN-ENGINEERED SiGeC MULTI-QUANTUM WELLS GROWN BY RTCVD, Patricia Warren, Michel Dutoit, EPEL, Department of Physics, Lausanne, Switzerland; Georoes Brémond, INSA, LPM, Villeurbanne, France; Jean Daniel Ganiero EPFL, Department of Physics, Lausanne, Switzerland; Philippe Boucaud, Jean Michel Lourtioz, IEF, France.

3:45 P.M. F7.6
Si1-x-yGexCy/Si HETERO-STRUCTURES GROWN BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION, Jian Mi, Ashawant Gupta and Cary Yang, Santa Clara University, Department of Electrical Engineering, Santa Clara, CA; M. Dutoit and P. Warren, Swiss Federal Institute of Technology, EPFL Lausanne, Institute de Micro et Optoelectron, Lausanne, Switzerland.

4:00 P.M. F7.7
BAND STRUCTURES AND OFFSETS OF ORDERED CxSi1-x-yGey STRUCTURES, Marcey Berrding, M. van Schilfgaarde and A. Sher, SRI International, Physical Electronics Laboratory, Menlo Park, CA.

4:15 P.M. F7.8
PSEUDOMORPHIC Si1-x-yGexCy PIN DIODES WITH LOW LEAKAGE CURRENT, A. St. Amour and J.C. Sturm, Princeton University, Department of Electrical Engineering, Princeton, NJ.

4:30 P.M. F7.9
GROWTH OF TERNARY AND QUATERNARY Si/Ge/C/Sn ALLOYS BY MOLECULAR BEAM EPITAXY, F.J. Guarin, IBM Microelectronics Division, Hopewell Junction, NY; and S.S. Iyer, SiBond L.L.C., Hopewell Junction, NY.

4:45 P.M. F7.10
STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF Ge1-2Cx CUBIC HETEROSTRUCTURES On Si, Xiaoping Shao, S. Rommel, B. Orner, F. Chen, Paul R. Berger and J. Kolodzey, University of Deleware, Department of Electrical Engineering, Newark, DE.

SESSION F8: LATE NEWS
Thursday Afternoon, April 10
5:00 P.M.
Sunset F Ballroom

Late news papers of exceptional quality will be considered for a special late news session to be held Thursday evening. In order to be considered for this session, your abstract must be received at MRS Headquarters no later than Friday, March 8, 1996.


The following exhibitors have identified their products and services as directly related to your research:

Academic Press
American Institute of Physics
Bede Scientific
CVC Products, Inc.
Elsevier Science, Inc.
IOP Publishing, Inc.
Kluwer Academic Publishers
Lake Shore Cryotronics, Inc.
Kurt J. Lesker Co.
n & k Technology, Inc.
Omicron Associates
Oxford Applied Research
Philips Semiconductors/Materials Analysis Group
Research & PVD Materials Corp.
South Bay Technology, Inc.
Staib Instruments, Inc.
Thermionics Laboratory, Inc.
Voltaix, Inc.

See page 6 for a complete list of exhibitors.