Chairs
Albert Polman
FOM-Institute AMOLF
Salvo Coffa
CNR-IMETEM
Robert N. Schwartz
Hughes Research Laboratories
Symposium Support
High Voltage Engineering Europa BV
Italian National Research Counsel (CNR)
SGS-Thomson
Army Research Office (ARO)
*Invited Paper
SESSION D1: GROWTH MECHANISMS AND PROPERTIES I
Chair: Robert N. Schwartz
Monday Morning, April 8
Sunset B
8:30 A.M. Welcome, Opening Remarks
8:45 A.M. *D1.1
Er-DOPING OF GaN AND RELATED ALLOYS, S.J. Pearton, C.R. Abernathy, J.D.
MacKenzie, University of Florida, Gainesville, FL; R.N. Schwartz, R.G. Wilson,
Hughes Research Laboratories, Malibu, CA; J.M. Zavada, United States Army
Research Laboratory, RTP, NC; and R.J. Shul, Sandia National Laboratories,
Albuquerque, NM.
9:15 A.M. D1.2
PROPERTIES OF UHV-CVD GROWN AND ION IMPLANTED Si:Er, M. Morse, B. Zheng,
J. Palm, X. Duan, L.C. Kimerling, Massachusetts Institute of Technology,
Department of Materials Science and Engineering, Cambridge, MA.
9:30 A.M. D1.3
PROPERTIES AND GROWTH OF MBE GROWN ERBIUM DOPED GALLIUM ARSENIDE CO-DOPED WITH
SELENIUM, P. Rutter, K.E. Singer and A.R. Peaker, University of
Manchester Institute of Science and Technology, Centre for Electronic
Materials, Manchester, United Kingdom.
9:45 A.M. D1.4
GROWTH CONDITIONS OF ERBIUM-OXYGEN-DOPED SILICON GROWN BY MBE, J.
Stimmer, A. Reittinger, G. Abstreiter, Walter Schottky Institut, Garching,
Germany; H. Holzbrecher and Ch. Buchal, ZCH, Forschungszentrum, Jülich,
Germany.
10:00 A.M. BREAK
SESSION D2: EXCITATION MECHANISMS I
Chair: Salvo Coffa
10:30 A.M. *D2.1
RARE-EARTH DOPED EPITAXIAL InGaP AND ITS OPTICAL PROPERTIES, Bruce W.
Wessels, Northwestern University, Evanston, IL.
11:00 A.M. *D2.2
ENERGY TRANSFER PROCESSES IN OXYGEN-CODOPED GaAs:Er, K. Takahei, R. Hogg
and A. Taguchi, NTT Basic Research Laboratories, Kanagawa, Japan.
11:30 A.M. D2.3
EXCITATION PROPERTIES OF Er-DOPED GaP AND GaAs FROM PHOTOLUMINESCENCE AND HIGH
PRESSURE STUDIES, Thomas D. Culp, U. Hömmerich, J.M. Redwing,
University of Wisconsin-Madison, Department of Chemical Engineering, Madison,
WI; X.Z. Wang, Bruce W. Wessels, Northwestern University, Department of
Materials Science and Engineering, Evanston, IL; T.F. Kuech and K.L. Bray,
University of Wisconsin-Madison, Department of Chemical Engineering, Madison,
WI.
11:45 A.M. D2.4
INCORPORATION, ACTIVATION, EXCITATION AND DE-EXCITATION OF ERBIUM IN SILICON,
A. Polman, Jung H. Shin, F.W. Saris, P.G. Kik and G.N. van den Hoven,
FOM Institute, AMOLF, Amsterdam, Netherlands.
SESSION D3: GROWTH MECHANISMS AND
PROPERTIES II: MBE
Chair: Albert Polman
Monday Afternoon, April 8
Sunset B
1:30 P.M. *D3.1
ION BEAM EPITAXY OF IN-SITU Er-O CO-DOPED SILICON FILMS, Morito Matsuoka
and Shun-ichi Tohno, NTT Opto-electronics Laboratories, Ibaraki, Japan.
2:00 P.M. D3.2
SEGREGATION, TRAPPING AND OPTICAL ACTIVATION OF ERBIUM DURING SILICON MOLECULAR
BEAM EPITAXY, R. Serna, Jung H. Shin, M. Lohmeier, E. Vlieg, A. Polman,
FOM-Institute for Atomic and Molecular Physics, Amsterdam, Netherlands; and
P.F.A. Alkemade, Delft University of Technology, DIMES/NF, Faculty of Applied
Physics, Delft, Netherlands.
2:15 P.M. D3.3
Er-DOPING IN Si FILMS GROWN BY MOLECULAR BEAM EPITAXY FOR EFFICIENT 1.54 um
LIGHT EMISSION, Wei-Xin Ni, K.B. Joelsson, G.V. Hansson, I.A. Buyanova,
W.M. Chen, B. Monemar, Linköping University, Department of Physics,
Linköping, Sweden; J. Candelas and B. Svensson, Royal Institute of
Technology, Department of Solid-State Electronics, Stockholm, Sweden.
2:30 P.M. D3.4
SELF ORGANISED GROWTH IN THULIUM DOPED GaAs USING MBE, M.R. Bennett,
K.E. Singer, UMIST, Centre for Electronic Materials, Manchester, United
Kingdom; A.C. Wright, NEWI, Advanced Materials Laboratory, Deeside, United
Kingdom; J.H. Evans, UMIST, Centre for Electronic Materials, Manchester, United
Kingdom; and Z.H. Jafri, University of Surrey, Department of Electronic and
Electrical Engineering, Surrey, United Kingdom.
2:45 P.M. BREAK
SESSION D4: GROWTH MECHANISMS AND PROPERTIES III
Chair: M. Morse
3:15 P.M. D4.1
NEODYMIUM AND ERBIUM IMPLANTED GaN, Eric Silkowski, Yung Kee Yeo, Robert
L. Hengehold, Air Force Institute of Technology, WPAFB, OH; Barbara Goldenberg,
Honeywell Technology Center, Bloomington, MN; and Gernot Pomrenke, ARPA/MTO,
Arlington, VA.
3:30 P.M. D4.2
OPTICAL CENTERS RELATED TO LASER-DOPED ERBIUM IN SILICON, Kenshiro
Nakashima, Osamu Eryu, Osamu Iioka, Hironori Oowaki, Nagoya Institute of
Technology, Showa-ku, Nagoya, Japan; and Masanori Watanabe, Ion Engineering
Research Institute Corporation, Hirakata, Osaka, Japan.
3:45 P.M. D4.3
PHOTOLUMINESCENCE OF ERBIUM-DIFFUSED SILICON, H. Horiguchi, R. Saito, T.
Kimura, University of Electro-Communications, Department of Electronic
Engineering, Tokyo, Japan; and T. Ikoma, TI Tsukuba Research and Development
Center Ltd., Ibaraki, Japan.
4:00 P.M. D4.4
MOCVD ERBIUM SOURCES, Anton C. Greenwald, Kurt Linden, Spire
Corporation, Bedford, MA; William S. Rees Jr. and Oliver Just, Georgia
Institute of Technology, Department of Chemistry, Atlanta, GA.
4:15 P.M. D4.5
SECONDARY ION MASS SPECTROMETRY ANALYSES OF RARE-EARTH DOPED SEMICONDUCTORS,
C.J. Hitzman, Charles Evans and Associates, Redwood City, CA; R.G.
Wilson and R.N. Schwartz, Hughes Research Laboratories, Malibu, CA.
4:30 P.M. D4.6
ABOUT THE ELECTRICAL AND STRUCTURAL PROPERTIES OF ERBIUM THERMALLY DIFFUSED IN
SINGLE CRYSTAL SILICON, S. Binetti, S. Pizzini, M. Acciarri and I.
Gelmi, University of Milano, Department of Physical Chemistry, Milano,
Italy.
SESSION D5: STRUCTURAL, ELECTRICAL AND
OPTICAL PROPERTIES I
Chair: J. Michel
Tuesday Morning, April 9
Sunset B
8:30 A.M. *D5.1
FACTORS GOVERNING THE PHOTOLUMINESCENCE YIELD OF Si:Er, W. Jantsch,
Johannes-Kepler Universität, Linz, Austria; H. Przybylinska, Institute of
Physics, PAS, Poland; C. Skierbiszewshi, Unipress,. Warsaw, Poland; and L.
Palmetshofer, Johannes-Kepler Universität, Linz, Austria.
9:00 A.M. D5.2
THE EFFECTS OF IMPURITY CODOPING ON THE ELECTRICAL PROPERTIES OF RARE EARTH
IONS IN CRYSTALLINE SILICON, S. Libertino, University of Catania,
Dipartimento di Fisica, Catania, Italy; S. Coffa, CNR-IMETEM, Catania, Italy;
F. Priolo and G. Franzò, University of Catania, Dipartimento di Fisica,
Catania, Italy.
9:15 A.M. D5.3
LUMINESCENCE DECAY OF THE 1.54 um EMISSION FROM ERBIUM IN SILICON, J. Hartung,
J.H. Evans, P. Dawson, A. Scholes, T. Taskin, Q. Huda, A.R. Peaker,
Centre for Electronic Materials, Department of Electrical Engineering, UMIST,
Manchester, United Kingdom; C. Jeynes, University of Surrey, Department of
Electrical Engineering, Surrey, United Kingdom; and D.C. Houghton, National
Research Council of Canada, Ottawa, Canada.
9:30 A.M. D5.4
STRESS AND ZEEMAN STUDY OF 1.5 um EMISSION IN Si:Er, Maria Carmo and Joaquim
Leitão, University of Aveiro, Department of Physics, Aveiro,
Portugal.
9:45 A.M. D5.5
DEFECT ENGINEERING IN Si:Er TECHNOLOGY, Nick A. Soboley, Oleg V.
Alexandrov, Vadim V. Emtsev, Dmitrii S. Poloskin, Elena I. Shek, Ioffe
Physico-Technical Institute, Department of Solid State Electronics, St.
Petersburg, Russia.
10:00 A.M. BREAK
SESSION D6: EXCITATION MECHANISMS II
Chair: B.W. Wessels
10:30 A.M. *D6.1
EXCITATION AND DE-EXCITATION OF ERBIUM IMPLANTS IN SILICON; PHOTOLUMINESCENCE
AND IMPACT IONIZATION STUDIES, T. Gregorkiewicz, I. Tsimperidis and
C.A.J. Ammerlaan, Universiteit van Amsterdam, Van der Waals - Zeeman Instituut,
Amsterdam, Netherlands.
11:00 A.M. D6.2
PHOTOLUMINESCENCE KINETICS OF RARE EARTH DOPED P-TYPE InP AND GaAs, H.J.
Lozykowski, U.K. Saha, Ohio University, School of Electrical Engineering
and Computer Science, Athens, OH.
11:15 A.M. D6.3
LUMINESCENCE QUENCHING IN ERBIUM-DOPED HYDROGENATED AMORPHOUS SILICON, Jung H.
Shin, G.N. van den Hoven, R. Serna, A. Polman, FOM-Institute, AMOLF,
Amsterdam, Netherlands; W.G.J.H.M. van Sark, A.M. Vredenberg, Debye Institute,
Utrecht University, Utrecht, Netherlands; S. Lombardo and S.U. Campisano,
CNR-IMETEM, Catania, Italy.
11:30 A.M. *D6.4
THE POSSIBLE MECHANISM OF EXCITATION OF THE f-f EMISSION IN CLUSTERS Er-O IN
SILICON, V.F. Masterov and L.G. Gerchikov, St. Petersburg State
Technical University, St. Petersburg, Russia.
SESSION D7: EXCITATION MECHANISMS III
Chair: F. Priolo
Tuesday Afternoon, April 9
Sunset B
1:30 P.M. *D7.1
ON THE EXCITATION MECHANISM OF Er AND Yb IN THE QUATERNARY COMPOUNDS InGaAsP,
Peter Wellmann, Albrecht Winnacker, University of Erlangen, Institute
for Material Science, Electronic Materials, Erlangen, Germany; and Gerhard
Pensl, University of Erlangen, Institute of Applied Physics, Erlangen,
Germany.
2:00 P.M. *D7.2
EXCITATION AND RECOMBINATION PROCESSES IN RARE EARTH DOPED II-VI
SEMICONDUCTORS, M. Godlewski, Polish Academy of Sciences, Institute of
Physics, Warsaw, Poland.
2:30 P.M. D7.3
PHOTO- AND ELECTROLUMINESCENCE STUDY OF EXCITATION MECHANISM OF Er LUMINESCENCE
IN a-Si:H(Er), I.N. Yassievich, O.B. Gusev, Ioffe Physico-Technical
Institute, St. Petersburg, Russia; W. Fuhs, Philipps- Universität,
Marburg, Germany; A.N. Kuznetsov, E.I. Terukov and B.P. Zakhrchenya, Ioffe
Physico-Technical Institute, St. Petersburg, Russia.
2:45 P.M. BREAK
SESSION D8: STRUCTURAL, ELECTRICAL
AND OPTICAL PROPERTIES II
Chair: W. Jantsch
3:15 P.M. D8.1
CHARACTERIZATION OF Er-DOPED III-NITRIDES PREPARED USING MOMBE, J.M.
Zavada, U.S. Army Reserach Office, Electronics Division, Research Triangle
Park, NC; R.G. Wilson, R.N. Schwartz, Hughes Research Laboratories, Malibu, CA;
C.R. Abernathy, J.D. MacKenzie, S.J. Pearton, University of Florida,
Gainesville, FL.
3:30 P.M. D8.2
THE 4f INTRASHELL TRANSITIONS OF InP:Yb, Ingrid de Maat-Gersdorf, T.
Gregorkiewicz and C.A.J. Ammerlaan, University of Amsterdam, van der
Waals-Zeeman Institute, Amsterdam, Netherlands.
3:45 P.M. D8.3
EXAFS AND X-RAY CTR SCATTERING CHARACTERIZATION OF Er ATOMS DOPED IN InP BY
OMVPE, Yoshikazu Takeda, Daisuke Kawamura, Keiji Fujita, Naoki
Matsubara, Naoki Yamada, Hironori Ofuchi, Satofumi Ichiki, Masao Tabuchi and
Yasufumi Fujiwara, Nagoya University, Department of Materials Science and
Engineering, Nagoya, Japan.
4:00 P.M. D8.4
OPTICAL ANISOTROPY OF Er CENTERS IN GaAs:Er,O, R.A. Hogg, K. Takahei, A.
Taguchi, NTT Basic Research Laboratories, Kanagawa, Japan.
4:15 P.M. D8.5
ANNEALING STUDY OF ERBIUM AND OXYGEN IMPLANTED GALLIUM NITRIDE, John T.
Torvik, Robert J. Feuerstein, Jacques I. Pankove, University of Colorado at
Boulder, Department of Electrical Engineering, Boulder, CO; and Fereydoon
Namavar, Spire Corporation, Bedford, MA.
4:30 P.M. D8.6
RUTHERFORD BACKSCATTERING AND PHOTOLUMINESCENCE STUDIES OF ERBIUM IMPLANTED
GaAs, S.E. Daly, M.O. Henry, Dublin City University, School of Physical
Sciences, Dublin, Ireland; E. Alves, M.F. da Silva, ITN, Sacavém,
Portugal; J.C. Soares, CFNUL, Lisboa, Portugal; R. Gwilliam, B.J. Sealy,
University Surrey, Department of Electrical Electronic Engineering, Guilford,
United Kingdom; K. Freitag and R. Vianden, ISKP, University of Bonn, Bonn,
Germany.
4:45 P.M. D8.7
ACTIVATION OF Yb LUMINESCENCE IN GaAs BY GROUP VI ELEMENTS CODOPING, V.M.
Konnov, T.V. Larikova, N.N. Loyko, V.A. Dravin, V.V. Ushakov, A.A. Gippius,
P.N. Lebedev Physical Institute of the Academy of Sciences of Russia, Moscow,
Russia.
SESSION D9: ELECTROLUMINSCENCE AND INTEGRATION
Chair: S.J. Pearton
Wednesday Morning, April 10
Sunset B
8:30 A.M. *D9.1
EXCITATION MECHANISMS AND LIGHT EMITTING DEVICE PERFORMANCES IN Er-DOPED
CRYSTALLINE Si, F. Priolo, University of Catania, Department of Physics,
Catania, Italy; S. Coffa, CNR-IMETEM, Catania, Italy; G. Franzo, University of
Catania, Department of Physics, Catania, Italy; A. Polman, FOM-AMOLF,
Amsterdam, Netherlands; S. Libertino, University of Catania, Department of
Physics, Catania, Italy; and A. Carnera, University of Padova, Department of
Physics, Padova, Italy.
9:00 A.M. *D9.2
ERBIUM DOPED SILICON FOR LIGHT EMITTING DEVICES, J. Michel,
Massachusetts Institute of Technology, Cambridge, MA.
9:30 A.M. D9.3
1.54 um ELECTROLUMINESCENCE FROM ERBIUM DOPED GALLIUM PHOSPHIDE DIODES, G.M.
Ford and B.W. Wessels, Northwestern University, Department of Materials
Science and Engineering, Evanston, IL.
9:45 A.M. D9.4
NEODYMIUM-DOPED GaAs LIGHT EMITTING DIODES, Shoou-Jinn Chang, National
Cheng Kung University, Department of Electrical Engineering, Tainan, Taiwan.
10:00 A.M. D9.5
ELECTROLUMINESCENCE OF ERBIUM IN OXYGEN DOPED SILICON, S. Lombardo, S.U.
Campisano, CNR-IMETEM, Catania, Italy; G.N. van den Hoven and A. Polman,
FOM-AMOLF, Amsterdam, Netherlands.
10:15 A.M. D9.6
INCREASED REFRACTIVE INDICES IN RARE EARTH-DOPED InP AND In0.53Ga0.47As THIN
FILMS, Bethanie J.H. Stadler and Joseph P. Lorenzo, USAF Rome
Laboratory, Optoelectronic Components Branch, Hanscom AFB, MA.
10:30 A.M. BREAK
SESSION D10: STRUCTURAL, ELECTRICAL AND
OPTICAL PROPERTIES III
Chair: T. Gregorkiewicz
11:00 A.M. D10.1
Er3+ RELATED VISIBLE AND NEAR INFRARED LUMINESCENCE IN ERBIUM
IMPLANTED 6H SiC, M. Yoganathan, W.J. Choyke, R.P. Devaty, University of
Pittsburgh, Department of Physics and Astronomy, Pittsburgh, PA; G. Pensl,
Universität Erlangen Nürnberg, Lehrstuhl Angewandte Physik, Erlangen,
Germany; and J.A. Edmond, Cree Research, Durham, NC.
11:15 A.M. D10.2
PHOTOLUMINESCENCE OF ERBIUM IMPLANTED IN SiGe, S.J. Chang, National
Cheng Kung University, Department of Electrical Engineering, Tainan, Taiwan;
D.K. Nayak and Y. Shiraki, University of Tokyo, Research Center for Advanced
Science and Technology, Tokyo, Japan.
11:30 A.M. D10.3
STUDY OF THE ZEEMAN EFFECT OF Er3+IN GaAs:Er,O, D. Haase, A.
Dörnen, Universität Stuttgart, Stuttgart, Germany; K. Takahei and A.
Taguchi, NTT Basic Research Laboratories, Morinosato-Wakamiya, Japan.
11:45 A.M. D10.4
LUMINESCENCE FROM ERBIUM IMPLANTED HYDROGENATED AMORPHOUS SILICON: INFLUENCE OF
THE HYDROGEN AND OXYGEN CONCENTRATION, Mohamed Kechouane, Nasser Beldi
and Tayeb Mohammed-Brahim, Laboratoire "Couches Minces et Semiconducteurs",
Institute de Physique, Algerie; Hélène L'Haridon, Michel Salvi,
Marcel Gauneau and Pierre-Nöel Favennec, France Telecom, CNET, Lannion,
France.
SESSION D11: STRUCTURAL, ELECTRICAL AND
OPTICAL PROPERTIES IV: POROUS Si
Chair: J.M. Zavada
Wednesday Afternoon, April 10
Sunset B
1:30 P.M. D11.1
CHARACTERIZATION OF VISIBLE AND INFRARED(1.54 um) LUMINESCENCE FROM Er-DOPED
POROUS SILICON, R. White, X. Wu, U. Hömmerich, Hampton University,
Research Center for Optical Physics, Hampton, VA; F. Namavar and A.
Cremins-Costa, Spire Corporation, Bedford, MA.
1:45 P.M. D11.2
1.54um ROOM-TEMPERATURE LUMINESCENCE OF Er-DOPED POROUS Si, S. Komuro,
X. Zhao, S. Maruyama, H. Isshiki, Y. Aoyagi and T. Sugano, Frontier Research
Program, The Institute of Physical and Chemical Research, Wako, Japan.
2:00 P.M. D11.3
TO PROBE THE ABSORPTION EDGE OF POROUS SILICON BY ERBIUM, X. Zhao, S.
Komuro, H. Isshiki, Y. Aoyagi and T. Sugano, Frontier Research Program, The
Institute of Physical and Chemical Research, Wako, Japan.
2:15 P.M. D11.4
SHARP 1.54 um LUMINESCENCE OF POROUS SILICON ELECTROCHEMICALLY DOPED WITH
ERBIUM, Alexander Dorofeev, Vitaly Bondarenko and Nikolay Kazuchits,
BSUIR, Microelectronics, Minsk, Belarus.
2:30 P.M. CONCLUDING REMARKS
The following exhibitors have identified their products and services as
directly related to your research:
Academic Press
American Institute of Physics
Elsevier Science, Inc.
High Voltage Engineering Europa
IOP Publishing, Inc.
Kluwer Academic Publishers
Lake Shore Cryotronics, Inc.
Kurt J. Lesker Co.
Magnet Sales & Manufacturing
Omicron Associates
Philips Semiconductors/Materials Analysis Group
See page 6 for a complete list of exhibitors.