Join us for this special evening of Awards and Celebration!
Come honor our distinguished award recipients at the 2019 MRS Fall Meeting Awards Ceremony! Awards include:
- Von Hippel Award
- David Turnbull Lectureship
- MRS Medal Award
- Materials Theory Award
- MRS Nelson “Buck” Robinson Science and Technology Award for Renewable Energy
- The Kavli Foundation Early Career Lectureship in Materials Science
- MRS Bulletin Postdoctoral Publication Prize
- MRS Postdoctoral Awards
- Graduate Student Gold and Silver
- Arthur Nowick Graduate Student Award
Von Hippel Award
The Materials Research Society’s highest honor, the Von Hippel Award, is conferred annually to an individual in recognition of the recipient’s outstanding contribution to interdisciplinary research on materials. Named after Arthur von Hippel (1898–2003), the award recognizes the qualities most prized by materials scientists and engineers—brilliance and originality of intellect, combined with a vision that transcends the boundaries of conventional disciplines, as exemplified by the life of Arthur von Hippel.
Jerry D. Tersoff, IBM T.J. Watson Research Center
Simple Models for Complex Behavior in Nanowire Growth
“for advancing the understanding of low-dimensional and nanoscale electronic materials, surfaces and interfaces, through elegant theoretical models that highlight the essential physics controlling growth, structure and electronic properties”
Semiconductor nanowires provide unique opportunities for studying crystal growth. Their small diameter guarantees single-crystal growth. Moreover, transmission electron microscopy can capture the entire growth region in a single image, recording growth in situ under UHV conditions. A number of remarkable phenomena have been discovered in this way. Some are specific to nanowires, including dynamic growth morphologies and controlled phase switching. In other cases, nanowires provide a unique laboratory for studying more general phenomena, including nucleation of metastable phases and novel surface phases. I will describe a few of these intriguing observations, and show how even very simple models can give useful insight into the behavior, deepening our understanding of nanoscale materials.
Read more on Meeting Scene and watch an MRS TV interview with Jerry D. Tersoff.
About Jerry D. Tersoff
Jerry D. Tersoff is a principal research staff member at the IBM T.J. Watson Research Center. His recent research includes semiconductor nanowire growth; nanoscale effects in heteroepitaxy, including stress-driven self-assembly and self-organization; and the physics of carbon nanotube devices. Tersoff's early work includes theories of scanning tunneling microscopy, Schottky barriers and heterojunction band lineups. He also developed model interatomic potentials that are widely used in materials simulations. His work has been recognized by the Davisson-Germer Prize of the American Physical Society (APS), the Medard W. Welch Award of the American Vacuum Society (AVS) and the Materials Research Society (MRS) Medal. Tersoff is a member of the National Academy of Engineering and a Fellow of the APS, AVS and MRS. He served on the Board of Directors of the Materials Research Society from 2003 to 2005. He received his BA degree in physics from Swarthmore College and his PhD degree in physics from the University of California, Berkeley.