-MRS-
Chairs
Ilesanmi Adesida Univ of Illinois-Urbana
John Cowles TRW Inc
Derek Houghton SiGe Microsystems Inc
Fan Ren Univ of Florida
Invited paper
SESSION I1: SiGe AND III-V PROCESSING FOR PRODUCTION
Chair: Derek C. Houghton
Wednesday Afternoon, December 2, 1998
Cape Cod/Hyannis (M)
1:30 PM *I1.1
THE MATURATION OF SiGe AS A COMMERCIAL TECHNOLOGY. Bernard S. Meyerson, IBM T.J. Watson Research Center, Yorktown Heights, NY.
2:00 PM *I1.2
Si/SiGe and III-V INTEGRATED CIRCUIT TECHNOLOGY FOR NEXT GENERATION HIGH-SPEED SYSTEMS: COMPARISONS AND TRADEOFFS. Lawrence E. Larson, University of California-San Diego, Dept of Electrical and Computer Engineering, La Jolla, CA.
2:30 PM *I1.3
III-V PROCESSING CHALLENGES FOR THE MILLIMETER-WAVE COMMERCIAL MARKETPLACE. Lisa Aucoin, Raytheon Microelectronics, Advanced Device Center, Andover, MA.
3:00 PM BREAK
3:30 PM I1.4
IMPROVED PROCESS WINDOW USING LOW-CARBON Si1-x-yGexCy EPITAXIAL LAYERS. A.C. Mocuta, D.W. Greve, Carnegie Mellon University, Dept. of Electrical and Computer Engineering, Pittsburgh, PA; R.M. Strong, Northrop Grumman, Pittsburgh, PA.
3:45 PM I1.5
ACCURATE DYNAMIC SECONDARY ION MASS SPECTROMETRY (SIMS) CHARACTERIZATION OF SIGE HETERO-JUNCTION BIPOLAR TRANSISTOR (HBT) DOPANT LEVEL AND DOPANT DISTRIBUTION. Jeffrey T. Mayer, Temel H. Buyuklimanli, Mark S. Denker and Charles W. Magee, Evans East, Plainsboro, NJ.
4:00 PM I1.6
SURFACE TERMINATION OF THE Ge(100) AND Si(100) SURFACES BY USING DHF SOLUTION DIPPING. Masao Sakuraba, Takashi Matsuura, Junichi Murota, Research Institute of Electrical Communication, Tohoku University, Sendai, JAPAN.
4:15 PM I1.7
GROWTH AND CHARACTERIZATION OF HETEROEPITAXIAL Si-Ge-C FILMS. D. Chandrasekhar, David J. Smith, T. Laursen, J.W. Mayer, Arizona State University, Center for Solid State Science, Tempe, AZ; J. Huffman, McD. Robinson, Lawrence Semiconductor Research Laboratory, Tempe, AZ; E.T. Croke, A.T. Hunter, HRL Laboratories, LLC, Malibu, CA.
4:30 PM I1.8
HALL CHARACTERIZATION OF STRAINED SiGeC/Si EPILAYERS. Jeff J. Peterson, Charles E. Hunt, University of California, Davis, Dept. of Electrical and Computer Engineering, Davis, CA; Stefan F. Zappe, Ernst Obermeier, Technical University of Berlin, Microsensor and Actuator Technology, Berlin, GERMANY; Richard Westhoff, McDonald Robinson, Lawrence Semiconductor Research Laboratory, Inc., Tempe, AZ.
4:45 PM I1.9
CARBON DEPENDENCE OF THE DIELECTRIC RESPONSE FUNCTION IN EPITAXIAL SiGeC LAYERS GROWN ON Si. E. Finkman, Technion, Dept of Electrical Engineering, Haifa, ISRAEL; F. Meyer, J. Bonan, Universite Paris Sud, IEF, Orsay, FRANCE; Patricia Warren, EPFL, Lausanne, SWITZERLAND.
SESSION I2: POSTER SESSION
Chairs: Derek C. Houghton and Fan Ren
Wednesday Evening, December 2, 1998
8:00 P.M.
Salons (M)
I2.1
APPLICATION OF SiO2 FILMS DEPOSITED BY TICS/O2 PECVD TO InSb MISFET. Osamu Sugiura, Takahisa Akiba, Irman Idris, Toyo Institute of Technology, Dept of Physical Electronics, Tokyo, JAPAN.
I2.2
GROWTH AND CHARACTERIZATION OF AlN THIN FILMS BY REACTIVE MAGNETRON SPUTTERING AT LOW TEMPERATURE. K. Gurumurugan, Hong Chen, G R. Harp, Ohio Univ, Dept of Physics and Astronomy, Athens, OH.
I2.3
6H TO 3C POLYTYPE TRANSFORMATION IN SILICON CARBIDE. Dong Hyuk Shin, Dongguk University, Dept of Physics, Seoul, KOREA; Svitlana I. Vlaskina, Institute for Physics of Semiconductors, Ukrainian National Academy of Science, Kiev, UKRAINE
I2.4
FIRST-PRINCIPLES INVESTIGATION OF THE ORDERED Si4C1 COMPOUND. Wolfgang Windl, Motorola, Inc., Computational Materials Group, Los Alamos National Laboratory, Los Alamos, NM; Otto F. Sankey, Dept of Physics and Astronomy, Arizona State Univ, Tempe, AZ.
I2.5
FERMI-LEVEL EFFECT AND JUNCTION CARRIER CONCENTRATION EFFECT ON P-TYPE DOPANT DISTRIBUTION IN III-V COMPOUND SUPERLATTICES. Chang-Ho Chen, Ulrich M. Goesele, Teh Y. Tan, Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC.
I2.6
FERMI-LEVEL EFFECT AND JUNCTION CARRIER CONCENTRATION EFFECT ON BORON DISTRIBUTION IN Ge(x)Si(1-x)/Si HETEROSTRUCTURES. Chang-Ho Chen, Ulrich M. Goesele, Teh Y. Tan, Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC.
I2.7
DEVELOPMENT OF THEORETICAL MODEL AND COMPUTER SIMULATION RESULTS OF ENHANCED DIFFUSION OF HIGH-TEMPERATURE IMPLANTED ALUMINUM IN SILICON CARBIDE. Grigorii V. Gadiyak, Institute of Computational Technologies, Russian Academy of Sciences, Siberian Division, Novosibirsk, RUSSIA.
I2.8
STUDY OF Si1-xGex/Si/Si1-xGex HETEROSTRUCTURES WITH ABRUPT INTERFACES FOR ULTRAHIGH MOBILITY FETS. Nobuyuki Sugii, Kiyokazu Nakagawa, Shinya Yamaguchi and Masanobu Miyao, Central Research Laboratory, Hitachi Ltd., Tokyo, JAPAN.
I2.9
EFFECTS OF CF4 REACTIVE ION ETCHING ON Si-DOPED Al0.2Ga0.8As. Akira Ito, Suzuka National College of Tec, Dept of Elect and Info Eng, Suzuka, JAPAN; Atsuyoshi Sakai, Yutaka Tokuda, Aichi Inst of Tech, Dept of Elect Eng, Toyota, JAPAN.
I2.10
THERMAL RELIABILITY AND CHARACTERIZATION OF Pt/Ti/Pt/Au SCHOTTKY CONTACTS ON Ga0.2In0.8P/InP FOR HFET APPLICATIONS. H.C. Kuo, C.H. Lin, H. Hsia, D. Caruth, B.G. Moser, Z. Tang, H. Chen, M. Feng, G.E. Stillman Electrical and Computer Engineering, Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL.
I2.11
CRYSTAL STRUCTURE AND ANISOTROPY OF LUMINESENCE OF RHOMBOHEDRAL AND HEXAGONAL PHASE OF BORON NITRIDE. S.V.Ordin, A.F.Ioffe Physico-Technical Institute of RAS, St. Petersburg, RUSSIA; B.N. Sharupin, "ROMBONIT" Ltd., St. Petersburg, RUSSIA; M.I. Fedorov, A.F.Ioffe Physico-Technical Institute of RAS, St. Petersburg, RUSSIA; V.I. Rumyantsev, E.V. Tupitsina, A.S. Osmakov, ``ROMBONIT'' Ltd., St. Petersburg, RUSSIA.
I2.12
INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING OF GaN AND INP USING BCl3/AR/H2 CHEMISTRY. Sung-Dae Kim, Byung-Teak Lee, and Ho-Sung Kim, Dept of Metallurgical Engineering, *Dept of Ceramics Engineering, Chonnam National University, Kwangju, SOUTH KOREA.
I2.13
HIGH PERFORMANCE Cu METALLIZED GaAs HEMT PROCESSING AND RELIABILITY. Ting Feng, Nick Strifas, and Aris Christou, Dept. of Materials and Nuclear Engineering, University of Maryland, College Park, MD.
I2.14
HIGH ACCURACY MEASUREMENTS OF DOPANT PROFILES IN SiGe/Si HETEROSTRUCTURES USING SECONDARY ION MASS SPECTROMETRY. Salman Mitha, Mauro R. Sardela Jr. and Stephen P. Smith, Charles Evans and Associates, Redwood City, CA.
SESSION I3: III-V PROCESS CHALLENGES
Chairs: Ilesanmi Adesida and John Cowles
Thursday Morning, December 3, 1998
Cape Cod/Hyannis (M)
8:30 AM *I3.1
DYNAMICS OF WET OXIDATION OF HIGH-Al-CONTENT III-V MATERIALS. Carol I.H. Ashby, Sandia National Laboratories, Albuquerque, NM.
9:00 AM *I3.2
WET OXIDATION OF HIGH Al-CONTENT III-V MATERIALS: FURTHER POSSIBILITIES. Evelyn L. Hu1,2, Helen Reese1, Prashant Chavarkar1, James Champlain1, Primit Parikh1, William Mitchell1, Alexis Black2, Umesh Mishra1,2, 1Department of Electrical and Computer Engineering, and 2Materials Department, UCSB, Santa Barbara, CA.
9:30 AM I3.3
SELECTIVE DISORDERING OF InGaAs/GaAs MULTIPLE QUANTUM WELLS USING ARSENIC-DOPED SPIN-ON-GLASS. Ryan Naone, Larry Coldren, Univ of CA, QUEST, Santa Barbara, CA.
9:45 AM I3.4
FLEXIBLE ADJUSTMENT OF THE EMISSION WAVELENGTHS OF LASER STRUCTURES BY ION BEAM IMPLANTATION. U.G. Akano and I.V. Mitchell, Department of Physics and Astronomy, University of Western Ontario, London, Ontario, CANADA; F.R. Shepherd, A. Margittai, R. Clayton and C.J. Miner, Northern Telecom, Ottawa, Ontario, CANADA.
10:00 AM BREAK
10:30 AM *I3.5
IN SITU MONITORING OF III-V PROCESSING. Fred Lewis Terry, Jr., Solid State Electronics Laboratory, Dept. of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI.
11:00 AM I3.6
MOCVD-PREPARATION AND IN-SITU/UHV-ANALYSIS OF EPITAXIAL AND NON-EPITAXIAL INP-FILMS. Thomas Hannappel, Kerstin Knorr, Sven Visbeck, Frank Willig, Hahn-Meitner-Institute, CD, Berlin, GERMANY.
11:15 AM I3.7
IN-SITU CONTROL OF WET ETCHING USING SPECTROSCOPIC ELLIPSOMETRY. Sang-Jun Cho and Paul.G.Snyder, Univ of Nebraska-Lincoln, Dept of Electrical Engineering and Center for Microelectronic and Optical Materials Research, Lincoln, NE.
11:30 AM I3.8
PEAK VOLTAGE INSENSITIVITY TO QUANTUM WELL WIDTH IN RESONANT INTERBAND TUNNELING DIODES. Hiroto Kitabayashi, Takao Waho, Masafumi Yamamoto, NTT System Electronics Laboratories, Kanagawa, JAPAN.
11:45 AM I3.9
PHOTOLUMINESCENCE FROM FIB-PROCESSED InGaAs/AlGaAs QUANTUM WIRES/DOTS. Wen F. Tseng, Gregory A. Balchin, and Paul M. Amirtharaj, Semiconductor Electronics Division, National Institiute of Standards and Technology, Gaithersburg, MD.