1998 MRS Fall Meeting & Exhibit

SESSION F1: LIGHT EMISSION FROM NANOCRYSTALLINE SILICON 
Chairs: Leigh T. Canham and Michael J. Sailor 
Monday Morning, November 30, 1998 
Salon E (M)

8:30 AM *F1.1 
NANOSCALE SILICON LIGHT EMITTERS FOR INTERCONNECTS AND DISPLAYS: PROGRESS AND PROBLEMS. Philippe M. Fauchet, University of Rochester, Dept of Electrical and Computer Engineering, Rochester, NY. 

9:00 AM F1.2 
LIGHT EMITTING MICROPATTERNS OF POROUS SEMICONDUCTORS. D. J. Lockwood, National Research Council, Inst. for Microstructural Sciences, Ottawa, CANADA; P. Schmuki, Swiss Federal Institute of Technology, Dept. of Materials Science, Lausanne, SWITZERLAND; L. E. Erickson, National Research Council, Inst. for Microstructural Sciences, Ottawa, CANADA. 

9:15 AM F1.3 
STRONGLY SUPERLINEAR LUMINESCENCE AND LARGE INDUCED ABSORPTION IN OXIDIZED POROUS SILICON FILMS. Hideki Koyama, Philippe M. Fauchet, Univ of Rochester, Dept of Electrical Engineering, Rochester, NY. 

9:30 AM F1.4 
ENHANCING THE EXTERNAL QUANTUM EFFICIENCY OF POROUS SILICON LEDS BEYOND 1% BY A POST-ANODIZATION ELECTROCHEMICAL OXIDATION. Bernard Gelloz, Takashi Nakagawa, Nobuyoshi Koshida, Tokyo Univ of Agriculture and Technology, Div of Electronic and Information Engineering, Tokyo, JAPAN. 

9:45 AM BREAK 

10:15 AM F1.5 
OPTIMIZATION AND INTEGRATION OF ELECTRICALLY ISOLATED POROUS SILICON-BASED LIGHT EMITTING DEVICES. Karl D. Hirschman, Leonid Tsybeskov, Christopher C. Striemer, Selena Chan and Philippe M. Fauchet, Univ of Rochester, Dept of Electrical Engineering, Rochester, NY. 

10:30 AM F1.6 
PHOTOLUMINESCENCE FROM SINGLE POROUS SILICON CHROMOPHORES. Mike Mason, Grace Credo, Ken Weston, Steve Buratto, University of California, Santa Barbara, Dept of Chemistry, Santa Barbara, CA. 

10:45 AM F1.7 
ON THE ORIGIN OF LIGHT EMISSION FROM SI AND GE NANOCRYSTALS: QUANTUM CONFINEMENT, TRAPPING, AND APPLICATIONS. H. W. H. Lee, G. R. Delgado, P. A. Thielen, Lawrence Livermore National Laboratory, Livermore, CA; S. M. Kauzlarich, B. R. Taylor, C. S. Yang, and D. Mayeri, Dept of Chemistry, University of California at Davis, Davis, CA. 

11:00 AM F1.8 
AUGER EFFECT AT THE ORIGIN OF THE FAST LUMINESCENT BAND OF FRESHLY ANODIZED POROUS SILICON. R. Mighaoeth, H. Maref, Laboratoire de Physique des Semiconducteurs, Faculte des Sciences de Monastir Route de l'environnement, Monastir, TUNISIA; I. Mihalcescu, J.C. Vial, Laboratoire de Spectrometrie Physique Universite, Joseph Fourier-Grenoble I, St Martin d'Heres, FRANCE; G. Panczer, Laboratoire de Physico-Chimie des Materiaux Luminescents, Univ Claude Bernard, Villeurbanne, FRANCE. 

11:15 AM F1.9 
DEFECTS AND PHONON ASSISTED OPTICAL TRANSITIONS IN Si NANOCRYSTALS. C. Delerue, G. Allan and M. Lannoo, IEMN, Lille, FRANCE. 

11:30 AM F1.10 
LUMINESCENCE STUDY OF SELF-ASSEMBLED SILICON QUANTIUM DOTS. Selichi Miyazaki, Kazutoshi Shiba, Naiki Miyoshi, Atsushi Kohno and Masataka Hirose, Dept of Electrical Engineering, Hiroshima University, Higashi-Hiroshima, JAPAN. 

11:45 AM F1.11 
FORMATION PROCESS OF SI NANOPARTICLES FORMED BY LASER ABLATION METHOD. Tetsuya Makimura, Taiji Mizuta, Takashi Ueda, Kouichi Murakami, Institute of Materials Science, Univ of Tsukuba, JAPAN. 

SESSION F2: PROPERTIES OF NANOCRYSTALLINE SEMICONDUCTORS AND PERIODIC STRUCTURES 
Chairs: Daniel Bellet and Philippe M. Fauchet 
Monday Afternoon, November 30, 1998 
Salon E (M)

1:30 PM *F2.1 
PERSPECTIVES OF POROUS SILICON MULTILAYER TECHNOLOGY. Markus Thoenissen, Research Center Juelich, Juelich, GERMANY. 

2:00 PM F2.2 
NANOCRYSTALLINE SILICON SUPERLATTICES: PHYSICAL PROPERTIES AND DEVICE APPLICATIONS. L. Tsybeskov, G.F. Grom, K.D. Hirshman, L. Montes, and P.M. Fauchet, Department of Electrical Engineering, University of Rocherster, Rochester, NY; T.N. Blanton, Eastman Kodak Company, Rochester, NY; J.P. McCaffrey, J.M. Baribeau, G.I. Sproulc, H.J. Labbé and D.J. Lockwood, Institute for Microstructural Sciences, National Research Council, Ottawa, CANADA. 

2:15 PM F2.3 
POROUS SILICON QUANTUM SUPERLATTICES. G. Lerondel, D. Midellino, G. Amato, A.M. Rossi, L. Boarino, IENGF, Torino, ITALY; A. Parisini, CNR-LAMEL, Bologna, ITALY. 

2:30 PM F2.4 
POROSITY-INDUCED OPTICAL PHONON ENGINEERING IN III-V COMPOUNDS. Ivan M. Tiginyanu, Technical Univ, Institute of Applied Physics, Chisinau, MOLDOVA; Gert Irmer, Jochen Monecke, Technical Univ, Freiberg, GERMANY; Hans L. Hartnagel, Alexander Vogt, Technical Univ, Darmstadt, GERMANY; Claude Schwab, Jean-Jacques Grob, CNRS/PHASE, Strasbourg, FRANCE. 

2:45 PM BREAK 

3:15 PM *F2.5 
RECENT PROGRESS IN THE PHYSICAL AND STRUCTURAL PROPERTIES OF POROUS SILICON. Daniel Bellet, Laboratoire de Spectrometrie Physique, Grenoble, FRANCE. 

3:45 PM F2.6 
ULTRASOUND EMISSION FROM POROUS SILICON : EFFICIENT THERMO-ACOUSTIC FUNCTION AS A DEPLETED NANOCRYSTALLINE SYSTEM. Nobuyoshi Koshida, Takashi Nakajima, Masaru Yoshiyama, Koki Ueno, Hiroyuki Shinoda, Faculty of Technology, Tokyo University of A&T, Koganei, Tokyo, JAPAN. 

4:00 PM F2.7 
RESONANT TUNNELING AND CURRENT OSCILLATIONS IN Si/CaF₂ MULTI QUANTUM WELLS. Androula Nassiopoulou, Vasilios Ioannou-Sougleridis, Victoria Tsakiri, NCRS Demokritos Institute of Microelectronics, Aghia Paraskevi Attikis, Athens, GREECE; S. Menard, Frank Bassani, F. Arnaud d'Avitaya, CRMC2/CNRS, Campus de luminy, Marseille, FRANCE. 

4:15 PM F2.8 
ATOMIC-FORCE MICROSCOPY OF SINGLE SILICON NANOCRYSTALS: MANIPULATION AND CHARGING. E.A.Boer, D.H. Santamore, H.A. Atwater, K.J. Vahala, Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena CA; M.L. Ostraat, R.C. Flagan, Department of Chemical Engineering, California Institute of Technology, Pasadena CA; L.D. Bell, Jet Propulsion Laboratory, Caltech, Pasadena CA. 

4:30 PM F2.9 
PRODUCTION OF SILICON NANOCRYSTALS BY THERMAL ANNEALING OF SILICON-OXYGEN AND SILICON-OXYGEN-CARBON ALLOYS: MODELS SYSTEMS FOR CHEMICAL AND STRUCTURAL RELAXATION AT Si-SiO₂ AND SiC-SiO₂ INTERFACES. G. Lucovsky, D. Wolfe, B. Hinds, NC State University, Dept of Physics, Raleigh, NC. 

4:45 PM F2.10 
SYNTHESIS AND CHARACTERIZATION OF GE NANOCRYSTALS. Soumyendu Guha,Soumyendu Guha, Naval Research Laboratory, Washington DC; Tony van Buuren, Mark Wall and Lloyd L. Chase, Lawrence Livermore Laboratory, Livermore, CA. 

SESSION F3: BIOLOGICAL APPLICATIONS AND SURFACE CHEMISTRY OF NANOCRYSTALLINE SEMICONDUCTORS 
Chairs: A. Paul Alivisatos and Michael J. Sailor 
Tuesday Morning, December 1, 1998 
Salon E (M)

8:15 AM *F3.1 
BIOLOGICAL TAGGING APPLICATIONS OF SEMICONDUCTOR NANOCRYSTALS. A. P. Alivisatos, Univ of California, Berkeley, Dept of Chemistry, Berkeley, CA. 

8:45 AM F3.2 
BIOINERT AND BIOACTIVE SILICON: IN-VIVO ASSESSMENT OF TISSUE COMPATIBILITY. A.P. Bowditch, K. Waters, H. Gale, E.A.M. Scott, P. Rice, Biomedical Sciences Department, DERA, Poroton Down, Wiltshire, UNITED KINGDOM. L.T. Canham, C.L. Reeves, A. Loni, T.I. Cox, DERA, Malvern, Worcestershire, UNITED KINGOM. 

9:00 AM F3.3 
DEVELOPMENT OF A POROUS SILICON BASED BIOSENSOR. Keiki-Pua S. Dancil, Douglas P. Greiner, Christian Gurtner, Michael J. Sailor, UCSD, Dept. of Chemistry and Biochemistry, La Jolla, CA; M.Reza Ghadiri, The Scripps Research Institue, Departments of Chemistry and Molecular Biology, and The Skaggs Institute for Chemical Biology, La Jolla, CA. 

9:15 AM BREAK 

9:45 AM *F3.4 
SURFACE CHEMISTRY OF POROUS SILICON. J.-N. Chazalviel, F. Ozanam, Laboratoire PMC, CNRS-Ecole Polytechnique, Palaiseau, FRANCE. 

10:15 AM F3.5 
COVALENT MODIFICATION OF THE SURFACE OF POROUS AND CRYSTALLINE SILICON. Paul E. Laibinis, M.I.T., Dept of Chemical Engineering, Cambridge, MA; Namyong Y. Kim, M.I.T., Department of Chemistry, Cambridge, MA. 

10:30 AM F3.6 
FUNCTIONALIZATION OF POROUS SILICON SURFACES THROUGH HYDROSILYLATION REACTIONS. Jillian M. Buriak, Michael P. Stewart, Matthew J. Allen, Purdue University, Department of Chemistry, West Lafayette, IN. 

10:45 AM F3.7 
ENHANCEMENT IN EFFICIENCY AND STABILITY OF OXIDE-FREE BLUE EMISSION FROM POROUS SILICON BY SURFACE PASSIVATION. Hiroyuki Mizuno and Nobuyoshi Koshida, Tokyo Univ. of Agri. & Tech., Dept. of Electronic & Info. Eng., Tokyo, JAPAN. 

11:00 AM F3.8 
MODIFICATION OF VISIBLE LIGHT EMISSION FROM SILICON NANOCRYSTALS AS A FUNCTION OF SIZE, ELECTRONIC STRUCTURE, AND SURFACE PASSIVATION. M. Wolkin-Vakrat, L. Tsybeskov, J. Jorne, P.M. Fauchet, University of Rochester, Department of Materials Science, Rochester, NY; G. Allan, C. Delerue, IEMN-ISEN, Lille, FRANCE. 

11:15 AM F3.9 
EFFECT OF HYDROGEN ON PHOTOLUMINESCENCE FROM Si NANOCRYSTALS IN SiO₂. S. P. Withrow, C. W. White, J. D. Budai, A. L. Meldrum, Oak Ridge National Laboratory, Oak Ridge, TN; J. Charles Barbour, Sandia National Laboratories, Albuquerque, NM; D. M. Hembree, Jr., Oak Ridge Y-12 Plant, Oak Ridge, TN. 

11:30 AM F3.10 
NANOSTRUCTURE OF POROUS SILICON USING TRANSMISSION MICROSCOPY: OBSERVATION OF RESTRUCTURED NANOCLUSTERS. Munir H. Nayfeh, Zain Yamani, Osman Gurdal, Department of Physics, University of Illinois at Urbana, Urbana, IL; and A.A. Al-Aql, Department of Physics, King Saud University, Riyadh, SAUDI ARABIA. 

SESSION F4: SYNTHESIS AND SPECTROSCOPY OF NANOCRYSTALLINE SEMICONDUCTORS 
Chairs: Reginald M. Penner and Tony W.H. van Buuren 
Tuesday Afternoon, December 1, 1998 
Salon E (M)

1:30 PM *F4.1 
SEMICONDUCTOR NANOCRYSTALLITES: BUILDING ARTIFICIAL ATOM STRUCTURES. Moungi G. Bawendi, MIT, Dept. of Chemistry, Cambridge, MA. 

2:00 PM F4.2 
INTRABAND RELAXATION IN SEMICONDUCTOR QUANTUM DOTS. Moonsub Shim, Chris Matranga, Margaret Hines, Philippe Guyot-Sionnest, University of Chicago, Chicago, IL. 

2:15 PM F4.3 
POLYMERIZATION OF REACTIVE MONOMERIC NANOCRYSTALS. Yongchi Tian, Anthony Dinsmore, Syed Qadri and B. R. Ratna, Geo Centers at Naval Research Laboratory, Washington, DC. 

2:30 PM F4.4 
ULTRAFAST DYNAMICS OF INTER- AND INTRA-BAND TRANSITIONS IN SEMICONDUCTOR NANOCRYSTALS: IMPLICATIONS FOR QUANTUM-DOT LASERS. Victor Klimov, Christian Schwarz, Xiaoguang Yang, and Duncan McBranch Chemical Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM. 

2:45 PM BREAK 

3:15 PM *F4.5 
EPITAXIAL SEMICONDUCTOR NANOCRYSTALS (CuI, CdS, InN) DERIVED FROM ELECTROCHEMICALLY DEPOSITED METAL NANOPARTICLES. Reg Penner, Sasha Gorer, HongTao Liu, Jane Ganske, John Hemminger, UCI, Irvine, CA. 

3:45 PM F4.6 
STRONG PHOTOLUMINESCENCE IN THE NEAR-INFRARED FROM COLLOIDALLY-PREPARED HGTE NANOCRYSTALS. M. T. Harrison, S. V. Kershaw, M. G. Burt, BT Laboratories, Martlesham Heath, Ipswich, UK; A. L. Rogach*, H. Weller, A. Eychmuller, Institut fur Physikalische Chemie, Universitat Hamburg, Hamburg, GERMANY. *permanent address: Physico-Chemical Research Institute, Belarusian State University, Minsk, BELARUS. 

4:00 PM F4.7 
ELECTRONIC STRUCTURE OF GERMANIUM NANOCRYSTALS. T. van Buuren¹, C. Bostedt², S. Kakar³, L.L. Chase¹, L.J. Terminello¹; ¹Lawrence Livermore National Laboratory, Livermore, CA; ²University of Hamburg, Inst. f. Exp.-Physik, GERMANY; ³UC Davis, Dept of Applied Sciences, Davis, CA 

4:15 PM F4.8 
GIANT INTERNAL MAGNETIC FIELDS IN NANOCRYSTAL QUANTUM DOTS. Al L. Efros and M. Rosen, Naval Research Laboratory, Washington DC. 

4:30 PM F4.9 
EFFICIENT VISIBLE LUMINESCENCE FROM GaAs NANOCRYSTALS IN SiO₂ MATRICES. Y. Kanemitsu, S. Mimura and S. Okamoto, Nara Institute of Science and Technology, Ikoma, Nara, JAPAN; K.S. Min and H.A. Atwater, California Institute of Technology, Pasadena, CA. 

4:45 PM F4.10 
SPECTROSCOPY OF SINGLE CdSe NANOCRYSTALLITE QUANTUM DOTS. Stephen Empedocles, Robert Neuhauser, Kentaro Shimizu and Moungi Bawendi, MIT, Dept of Chemistry, Cambridge, MA. 

SESSION F5: POSTER SESSION: 
MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS 
Chairs: Jillian M. Buriak Jean-Noel Chazalviel and Leonid Tsybeskov 
Tuesday Evening, December 1, 1998 
8:00 P.M. 
Salons (M)

F5.1 
OPTICAL STUDY OF FREE-STANDING AND ON-SUBSTRATE POROUS SILICON MULTILAYER STRUCTURES FOR OPTOELECTRONIC APPLICATIONS. Selena Chan, Leonid Tsybeskov, Philippe M. Fauchet, Univ of Rochester, Dept of Electrical Engr, Rochester, NY. 

F5.2 
IMPROVED PL IN POROUS SILICON DUE TO THE COMPENSATION OF THE DEFECT CENTER BY ANODIC OXIDATION. Y. Show, S. Rath, S. Nozaki, and H. Morisaki, Department of Communications and Systems, The University of Electro-Communications, Tokyo, JAPAN; M. Iwase and T. Izumi, Faculty of Engineering, Tokai University, Hiratsuka-shi, Kanagawa, JAPAN. 

F5.3 
AN PROTOTYPE ULTRAVIOLET DETECTOR ON BASED-SILICON DEVICES USING POROUS SILICON THIN FILM LUMINESCENT. Limarix Peraza, Madeline Cruz, Angel Estrada, J. Avalos, Metropolitan University, Dept. of Sciences and Technology, San Juan, PR; Luis Fonseca, Oscar Resto, University of Puerto Rico, Dept. of Physics, San Juan, PR. 

F5.4 
INFLUENCE OF THE PARTICLE SIZE AND THE METHOD OF PREPARATION ON THE PROPERTIES OF MICROCRYSTALLINE FERRIC HYDROXIDE AND OF Fe₂O₃ OBTAINED BY DEHYDRATION. Georges Dénès, Concordia University, Department of Chemistry and Biochemistry, Laboratory of Solid State Chemistry and Mössbauer Spectroscopy, and Laboratories for Inorganic Materials, Montreal, Quebec, CANADA; S.C.F. Au-Yeung, Chemistry Department, Chinese University, HONG KONG. 

F5.5 
CORRELATION BETWEEN DEFECT STRUCTURES AND LIGHT EMISSION IN Si-NANOCRYSTAL DOPED SiO₂ FILMS. Keisuke Sato, Yosuke Sugiyama and Tomio Izumi, Department of Electronics, Faculty of Engineering, Tokai University, Hiratsuka-shi, Kanagawa, JAPAN; Mitsuo Iwase, Department of Electrical Engineering, Faculty of Engineering, Tokai University, Hiratsuka-shi, Kanagawa, JAPAN; Yoshiyuki Show, Shinji Nozaki and Hiroshi Morisaki, Department of Communications and Systems, The University of Electro-Communications, Chofu-shi, Tokyo, JAPAN. 

F5.6 
TIGHT BINDING MODEL GW CALCULATION OF QUASIPATICLE GAPS FOR SILICON NANOCRYSTALS. C. Delerue, M. Lannooand G. Allan, IEMN - Department ISEN, Lille, FRANCE. 

F5.7 
EXCITATION AND LUMINESCENCE OF SIZE SELECTED NANOCLUSTERS IN POROUS SILICON. Z. Yamani, W. Howard Thompson, N. Rigakis, and M. H. Nayfeh, Department of Physics, University of Illinois, Urbana, IL. 

F5.8 
PHOTOLUMINESCENCE AND PHOTOACOUSTIC SPECTROSCOPY OF POROUS SILICON. Vladimir Karavanskii, Institute of General Physics, Russian Academy of Sciences, Moscow, RUSSIA; Alexander Obraztsov, Physics Department of Moscow State Univ., Moscow, RUSSIA; Hideo Okushi, Hideyuki Watanabe, Electrotechnical Laboratory, Tsukuba, lbaraki, JAPAN. 

F5.9 
Abstract Withdrawn. 

F5.10 
RECENT ADVANCES IN THE SYNTHESIS AND PROPERTIES OF SILICON CAPPED GERMANIUM NANOCLUSTERS. Chung-Sung Yang, Susan M. Kauzlarich, Univ. of California-Davis, Dept of Chemistry, Davis, CA; Young-Chung Wang, LBNL, National Center for Electron Microscopy, Berkeley, CA; Howard W.H. Lee, Gildardo R. Delgado, LLNL, Photonic Group, Livermore, CA. 

F5.11 
ADSORPTION ASSISTED EXCITATION OF POROUS SILICON PHOTOLUMINESCENCE. T.V. Torchinskaya, N.E. Korsunskaya, L.Yu. Khomenkova, B.R. Dzhumaev, Institute of Semiconductor Physics, National Academy of Sciences, Kyiv, UKRAINE; A. Many, Y. Goldstein, E. Savir, Racah Institute of Physics, The Hebrew University, Jerusalem, ISRAEL. 

F5.12 
GIANT ANISOTROPY OF CONDUCTIVITY IN HYDROGENATED NANOCRYSTALLINE SILICON THIN FILMS. A.B. Pevtsov, N.A. Feoktistov, V.G. Golubev, Ioffe Physico-Technical Institute, St. Petersburg, RUSSIA. 

F5.13 
PLASMONS ON LUMINESCENT POROUS SILICON PREPARED WITH ETHANOL. O. Resto, L.F. Fonseca, A. Ramirez-Porras, and S.Z. Weisz, Department of Physics, University of Puerto Rico, Rio Piedras, PR; A. Many, and Y. Goldstein, Racah Institute of Physics, The Hebrew University, Jerusalem, ISRAEL. 

F5.14 
LIGHT EMITTING NANOSTRUCTURES IN IMPLANTED SILICON LAYERS. R. Plugaru^a, J. Piqueras^b, B. Mendez^b, C. Craciun^a, N. Nastase^a; ^aInstitute of Microtechnology, Bucharest, ROMANIA; ^bDpt. Fisica de Materiales, Facultad de Fisicas, Univ. Complutense, Madrid, SPAIN. 

F5.15 
THE INVERTED MEYER-NELDEL RULE IN THE CONDUCTANCE OF NANOSTRUCTURED SILICON FIELD-EFFECT DEVICES. R.E.I. Schropp and H. Meiling, Utrecht University, Debye Institute, Utrecht, THE NETHERLANDS. 

F5.16 
VIBRATIONAL AND ELECTRONIC PROPERTIES OF Si NANOPARTICLES. J. R. Fox and A. A. Sirenko, Department of Physics, Penn State University, University Park, PA. 

F5.17 
X-RAY REFLECTIVITY STUDY ON POROUS SILICON FORMATION. Virginie Chamard, Gérard Dolino, Laboratoire de Spectrometrie Physique, Universite J. Fourier, Saint-Martin d'Heres, FRANCE; Joel Eymery, Departement de Recherche Fondamentale sur la Matiere Condensee, CEA-Grenoble, FRANCE. 

F5.18 
POROUS SILICON FILM COMPOSITION AND PHOTOLUMINESCENCE MODIFICATIONS STIMULATED BY TREATMENT IN HF. Viktorija B. Shevchenko, Oleksandr I. Dacenko, Volodymyr A. Makara, Olga V. Rudenko, Oleg V. Vakulenko, Taras Shevchenko National Univ, Dept of Physics, Kyiv, UKRAINE; Mykola S. Boltovets, Inst ``Orion'', Kyiv, UKRAINE. 

F5.19 
LIGHT INDUCED ELECTRON SPIN RESONANCE MEASUREMENTS ON MICROCRYSTALLINE SILICON PREPARED AT DIFFERENT DEPOSITION RATES. Joachim Mueller, Friedhelm Finger, Peter Hapke, Heribert Wagner, Forschungszentrum Juelich, ISI-PV, Juelich, GERMANY. 

F5.20 
POROUS SILICON NANOCRACKING. Gilles Lerondel, M. Bertola, G. Amato, L. Boarino, A.M. Rossi, IENGF, Torino, ITALY; A. Parisini, CNR-LAMEL, Bologna, ITALY. 

F5.21 
EFFECTS OF VARIOUS HYGROGEN DILUTION RATIOS ON THE PERFORMANCE OF THIN FILM NANOCRYSTALLINE/CRYSTALLINE SILICON SOLAR CELLS. Young J. Song, Wayne A. Anderson, State University of New York at Buffalo, Dept of Electrical Engineering, Amherst, NY. 

F5.22 
INTEGRATION OF MULTILAYERS IN Er-DOPED POROUS SILICON STRUCTURES FOR OPTOELECTRONIC DEVICES. Herman A. Lopez, Selena Chan, Leonid Tsybeskov, Philippe M. Fauchet, University of Rochester, Dept of Materials Science and Dept of Electrical Engineering, Rochester, NY; V. P. Bondarenko, Belarusian State University of Informatics and Radioelectronics, Minsk, BELARUS. 

F5.23 
SURFACE RELAXATION EFFECTS ON THE ELECTRONIC PROPERTIES OF POROUS SILICON. E. Vázquez, M.R. Beltran, and J.Tagüeña-Martinez, C. Wang, and L. E. Sansores. Instituto de Investigaciones en Materiales, UNAM, MEXICOCentro de Investigación en Energía, UNAM, Temixco, MEXICO. 

F5.24 
ROLE OF THE OXIDATION PROCESS ON POROUS SILICON PHOTOLUMINESCENCE AND ITS EXCITATION. Tatiana V. Torchinskaya, Nadezhda E. Korsunskaya, Larisa Yu. Khomenkova,Berdishukur R. Dzhumaev, Institute of Semiconductor Physics, National Academy of Sciences, Kiev, UKRAINE; Yehuda Goldstein, Esther Savir, Avraam Many, Racah Institute of Physics, Hebrew University, Jerusalem, ISRAEL; S.M. Prokes, Naval Research Laboratory, Washington, DC. 

F5.25 
CHARACTERIZATION OF nc-Si/a-SiO₂ SUPERLATTICES SUBJECTED TO THERMAL TREATMENT. G. Grom, L. Tsybeskov, K.D. Hirschman and P.M. Fauchet, Department of Electrical Engineering, University of Rochester, Rochester, NY; T.N. Blanton, Eastman Kodak Company, Rochester, NY; J.P. McCaffrey, J.-M. Baribeau, G.I. Sproule, H.J. Labbe and D.J. Lockwood, Institute for Microstructural Sciences, National Research Council, Ottawa, CANADA. 

F5.26 
PREPARATION AND OPTICAL PROPERTIES OF FREE-STANDING POROUS SILICON FILMS WITH HIGH POROSITIES. Dong-Sheng Xu, Guo-Lin Guo, Lin-Lin Gui, You-Qi Tang, Peking Univ, Institute of Physical Chemistry, Beijing, CHINA; Bei-Ri Zhang, Guo- Gang Qin, Peking Univ, Dept of Physics, Beijing, CHINA. 

F5.27 
GROWTH OF Si NANO-WHISKERS ON A H-TERMINATED Si{111} SURFACE. N. Ozaki, Y. Ohno, S. Takeda, M. Hirata, Dept of Phys, Graduate School of Sci, Osaka Univ, Toyonaka, Osaka, JAPAN. 

F5.28 
ROOM TEMPERATURE VISIBLE ELECTROLUMINESCENCE FROM SILICON NANO-CRYSTALS. Nenad Lalic and Jan Linnros, Royal Inst of Technology, Dept of Electronics, Stockholm, SWEDEN. 

F5.29 
ABSENCE OF CARRIER HOPPING IN POROUS SILICON. I. Mihalcescu, J.C. Vial and R. Romestain Laboratoire de SpectromÈtrie Physique, UniversitÈ Joseph Fourier-Grenoble I, Saint Martin d'HËres, FRANCE. 

F5.30 
PHASE SEGREGATION IN SIPOS: FORMATION OF Si NANOCRYSTALS. Anna Vilà, Joan R. Morante, Barcelona Univ, Dept of Electronics, Barcelona, SPAIN; Brigitte Caussat, Polytechnic National Institute, ENSIGC, Toulouse, FRANCE; Patrick Barathieu, Emmanuel Scheid, Laboratory of System Analysis and Architecture, Toulouse, FRANCE. 

F5.31 
FORMATION AND LUMINESCENT PROPERTIES OF POROUS SILICON DOPED WITH ERBIUM BY ELECTROCHEMICAL PROCEDURE. Leonid Dolgyi, Svetlana Volchek, Nikolai Kazuchits, Valentina Yakovtseva, Vitaly Bondarenko, Vladimir Petrovich, Belarussian State University of Informatics and Radioelectronics, Dept of Microelectronics, Minsk, BELARUS; Galina Grom, Herman Lopez, Leonid Tsybeskov, Philippe Fauchet, University of Rochester, Dept of Electrical Engineering, Rochester, NY. 

F5.32 
MEAN-FIELD DIELECTRIC FUNCTION MODELING OF POROUS SILICON CARBIDE USING A STATISTICAL APPROACH. Jonathan E. Spanier and Irving P. Herman, Columbia Radiation Laboratory and the Department of Applied Physics, Columbia University, New York, NY. 

F5.33 
ELECTRO-POLYMERIZATION IN POROUS SILICON FILM. R.K. Soni, L.F. Fonseca, O. Resto, A. Guadalupe, and S.Z. Weisz, Physics Department, University of Puerto Rico, San Juan, PUERTO RICO. 

F5.34 
ORIGIN OF THE NEAR VISIBLE PHOTOLUMINESCENCE BAND FROM SILICON SUBOXIDE THIN FILMS. F. Wang, D.M. Wolfe and G. Lucovsky, Departments of Physics, Materials Science and Engineering, Electrical and Computer Engineering, North Carolina State University, Raleigh, NC. 

F5.35 
Abstract Withdrawn. 

F5.36 
LONG LUMINESCENCE LIFETIME OF 1.54 m Er³⁺ LUMINESCENCE FROM ERBIUM DOPED SILICON RICH SILICON OXIDE AND ITS ORIGIN. Se-Young Seo, Jung H. Shin and Choochon Lee, Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Yusung-gu, SOUTH KOREA. 

F5.37 
INVESTIGATION OF BLUE LUMINESCENCE FROM Si AND Ge NANOCRYSTALS. Gildardo R. Delgado, Howard W. H. Lee, Peter Thielen, Lawrence Livermore National Laboratory, Livermore, CA; Susan Kauzlarich, Boyd R. Taylor, Chung-Sung Yang and Daniel Mayeri, Department of Chemistry, University of California, Davis, CA. 

F5.38 
FEMTOSECOND SPECTROSCOPY OF Si AND Ge NANOCRYSTALS. P.A. Thielen, H.W. H. Lee, G.R. Delgado, and J.D. Cooke, Lawrence Livermore National Laboratory, Livermore, CA. 

F5.39 
NONLINEAR OPTICAL PROPERTIES OF SEMICONDUCTOR QUANTUM DOTS. H.W.H. Lee, G.R. Delgado, P.A. Thielen, J.D. Cooke, Lawrence Livermore National Laboratory, Livermore, CA; S.M. Kauzlarich and B.R. Taylor, Dept of Chemistry, University of California at Davis, Davis, CA. 

F5.40 
LIGHT-PROMOTED HYDROSILYLATION ON POROUS SILICON: PHOTOPATTERNING AND LITHOGRAPHY OF FINE ALKYL AND ALKENYL FEATURES. Michael Stewart, Jillian Buriak, Purdue University, Department of Chemistry, West Lafayette, IN. 

F5.41 
ROLE OF OXIDATION PROCESS ON POROUS SILICON PHOTOLUMINESCENCE AND ITS EXCITATION. Tatiana V. Torchinskaya, Nadezhda E. Korsunskaya, Larisa Yu.Khomenkova, Berdishukur R. Dzhumaev, Institute of Semiconductor Physics, National Academy of Sciences, Kyiv, UKRAINE; Avraham Many, Yehuda Goldstein, Esther Savir, Racah Institute of Physics, The Hebrew University, Jerusalem, ISRAEL; Sharka M. Prokes, Naval Research Laboratory, Washington, DC. 

F5.42 
CONFORMAL SELF-ASSEMBLY OF Si/SiO_X NANOCOMPOSITE THIN FILM. Thomas Phely-Bobin, and Fotios Papadimitrakopoulos, Department of Chemistry, Polymer Science Program, Nanomaterials Optoelectronics Laboratory, Institute of Materials Science, University of Connecticut, Storrs, CT. 

F5.43 
LUMINESCENCE STOKES SHIFTS AND LOCALIZED STATES IN SURFACE-OXIDIZED Si NANOCRYSTALS. Y. Kanemitsu and S. Okamoto, Nara Institute of Science and Technology, Ikoma, JAPAN. 

F5.44 
THERMODYNAMICS AND KINETICS OF CRYSTALLINE SILICON CLUSTERS EMBEDDED IN THE MELT. P. Keblinski, Materials Science Division, Argonne National Laboratory, Argonne, IL, and Forschungszentrum Karlsruhe, Karlsruhe, GERMANY. 

SESSION F6: SYNTHESIS AND PROPERTIES OF 
MICROCRYSTALLINE AND NANOCRYSTALLINE 
SEMICONDUCTORS 
Chairs: Robert W. Collins and Chuang-Chuang Tsai 
Wednesday Morning, December 2, 1998 
Salon E (M)

8:30 AM *F6.1 
NANOSTRUCTURED PRECURSORS FOR SEMICONDUCTORS, BATTERY MATERIALS AND CONTACTS. David S. Ginley¹, Douglas Schulz¹, Calvin Curtis¹ and Fred Tepper²; ¹National Renewable Energy Laboratory, Golden, CO; ²Argonide Corp., Sanford, FL. 

9:00 AM F6.2 
STUDY OF ELECTRICAL PROPERTIES OF Ge-NANOCRYSTAL- LINE FILMS PREPARED BY CLUSTER-BEAM EVAPORATION TECHNIQUE. Souri Banerjee, H.Ono, S.Nozaki and H.Morisaki, Department of Communications and Systems, The University of Electro-Communications, Tokyo, JAPAN. 

9:15 AM F6.3 
LOW TEMPERATURE ECR PLASMA ASSISTED MOCVD MICROCRYSTALLINE AND AMORPHOUS GAN DEPOSITION AND CHARACTERIZATION FOR ELECTRONIC DEVICES. Z. Hassan, M.E. Kordesch, Department of Physics and Astronomy, Ohio University, Athens, OH; W.M. Jadwisienzak, H.J. Lozykowski, Department of Electrical Engineering and Computer Science, Ohio University, Athens, OH; W. Halverson and P.C. Colter, Spire Corporation, Bedford, MA. 

9:30 AM F6.4 
NANOSTRUCTURED ARRAYS FORMED BY FINELY FOCUSED ION BEAMS. R.A. Zuhr, J.D. Budai, P.G. Datskos, C.M. Egert, A. Meldrum, K.A. Thomas, C.W. White, Oak Ridge National Laboratory, Oak Ridge, TN; L.C. Feldman, Vanderbilt University, Nashville, TN ; M. Strobel, K.-H. Heinig, Research Center Rossendorf, Dresden, GERMANY. 

9:45 AM F6.5 
SYNTHESIS AND CHARACTERIZATION OF LAMELLAR NANOCRYSTALS OF MANGANESE OXIDE AND THEIR SELF-ASSEMBLY INTO ORGANIZED STRUCTURES. Stephanie L. Brock, Oscar Giraldo