Chairs
Harry Atwater, California Inst of Technology
Dean Face, DuPont
Peter Green, Univ of Texas-Austin
A. Lindsay Greer, Cambridge Univ
* Invited paper
SESSION X1:
Chairs: Harry A. Atwater, Dean W. Face, Peter F. Green and A. Lindsay Greer
Tuesday Afternoon, December 2, 1997
Salon E (M)
12:05 PM *X1.1
RECENT ADVANCES IN PHOTORESIST MATERIALS. C. Grant Willson, University of Texas at Austin, Department of Chemical Engineering, Austin, TX.
Abstract Not Available
12:45 PM *X1.2
BIOLOGICAL CERAMICS OR ALL YOU WANTED TO KNOW ABOUT SHELLS. A.H. Heuer, Case Western Reserve University, Department of Materials Science and Engineering, Cleveland, OH.
Abstract Not Available
SESSION X2:
Chairs: Harry A. Atwater, Dean W. Face, Peter F. Green and A. Lindsay Greer
Wednesday Afternoon, December 3, 1997
Salon E (M)
12:05 PM *X2.1
GENETICALLY ENGINEERED MATERIALS. David Tirrell, University of Massachusetts, Polymer Science and Engineering, Amherst, MA.
Abstract Not Available
12:45 PM *X2.2
ELECTRON CONDUCTING REDOX HYDROGELS AND THEIR APPLICATIONS IN BIOSENSORS. Adam Heller, The University of Texas at Austin, Department of Chemical Engineering, Austin, TX.
Abstract Not Available
SESSION X3:
Chairs: Harry A. Atwater, Dean W. Face, Peter F. Green and A. Lindsay Greer
Thursday Afternoon, December 4, 1997
Salon E (M)
12:05 PM *X3.1
MRS MEDAL AWARD TALK PRESENTATION
III-NITRIDE LASERS AND OPTOELECTRONIC DEVICES. Shuji Nakamura, Nichia Chemical Industries, Ltd., Dept of Research & Development, Tokushima, JAPAN.
Recent research on III-V nitrides has paved the way for the realization of high-quality crystals of GaN, AlGaN and InGaN, and of p-type conduction in GaN and AlGaN The mechanism of the acceptor-compensation which prevented obtaining low-resistivity p-type GaN has been elucidated. These developments in wide-gap III-V nitride semiconductors have led to the commercial production of high-brightness blue/green light-emitting diodes (LEDs) and to the demonstration of room-temperature (RT) bluish-purple laser light emission in InGaN/GaN/AlGaN-based heterostructures under pulsed and continuous-wave (CW) operations. The lifetime of the InGaN multi-quantum-well (MQW) structure laser diodes (LDs) have been improved to 300 hours under RT-CW operation. However, further improvements of the LD characteristics, including the lifetime, are required to enable commercialization of short-wavelength LDs. Here, the present status of the RT-CW operated InGaN MQW structure LDs with a high output power of 50 mW, a high operating temperature of 170 K and a long lifetime of more than 300 hours. Also, the current developments and the future prospects of high-brightness blue/green InGaN qunatum well structure LEDs are described.
12:45 PM *X3.2
SWITCHABLE MIRRORS FROM METAL HYDRIDES. Peter A. Duine, Philips Research Laboratory, Eindhoven, NETHERLANDS.
Abstract Not Available