1996 MRS Fall Meeting & Exhibit

Chairs

Paul Alivisatos -- Univ of California-Berkeley
Robert Collins -- Pennsylvania State Univ
Philippe Fauchet -- Univ of Rochester
Toshikazu Shimada -- Hitachi Ltd
Isamu Shimizu -- Tokyo Inst of Technology
Jean-Claude Vial -- Univ J. Fourier Grenoble

Symposium Support

• Asahi Glass Co., Ltd.
• Hitachi Europe Ltd.
• Hitachi Ltd
• Kaneka Corporation
• Mitsui-Toatsu Chemicals, Inc.
• Sanyo Electric Co., Ltd.
• Sharp Corporation
• Xerox Palo Alto Research Center

* Invited paper

SESSION Q1: CURRENT STATUS AND FUTURE PROSPECTS OF RESEARCH IN NANO/MICROCRYSTALLINE SEMICONDUCTORS
Chairs: Robert Collins and Philippe M. Fauchet
Monday Morning, December 2, 1996
Salon G (M)

8:15 AM Q1.
OPENING REMARKS AND AWARD PRESENTATION.

8:30 AM *Q1.1
NANO/MICROCRYSTALLINE SEMICONDUCTOR THIN FILMS, Kazunobu Tanaka, NAIR, Ibaraki, JAPAN.

9:30 AM BREAK

10:00 AM *Q1.2
SEMICONDUCTOR QUANTUM DOTS, Louis Brus, Columbia Univ, Dept of Chemistry, New York, NY.

11:00 AM *Q1.3
POROUS SEMICONDUCTORS, Leigh Canham, DRA Malvern, Electronics Sector, Worcestershire, UK.

SESSION Q2: PREPARATION AND PROPERTIES OF NANOCRYSTAL/DIELECTRIC MATERIALS
Chair: David J. Lockwood
Monday Afternoon, December 2, 1996
Salon G (M)

1:30 PM *Q2.1
SYNTHESIS, MICROSTRUCTURE, AND OPTICAL PROPERTIES OF SEMICONDUCTOR NANOCRYSTALS FORMED BY ION-IMPLANTATION, John D. Budai, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN.

2:00 PM Q2.2
EXCITONIC VS. MATRIX DEFECT-RELATED VISIBLE LUMINESCENCE OF Si NANOCRYSTALS IN SiO , Kyu Sung Min, California Inst of Technology, Dept of Materials Science, Pasadena, CA; K. V. Shcheglov, California Inst of Technology, Dept of Applied Physics, Pasadena, CA; Chih M. Yang, California Inst of Technology, Dept of Materials Science, Pasadena, CA; Harry A. Atwater, California Inst of Technology, Dept of Applied Physics, Pasadena, CA; Mark L. Brongersma, FOM Inst, AMOLF, Amsterdam, NETHERLANDS; Albert Polman, FOM Inst, Amsterdam, NETHERLANDS.

2:15 PM Q2.3
PREPARATION AND CHARACTERIZATION OF SILICON NANOCRYSTALS IN AN SiO MATRIX, Bruce J. Hinds, Gerald Lucovsky, Aditti Banerjee, North Carolina State Univ, Dept of Physics, Raleigh, NC; Robert Johnson, North Carolina State Univ, Dept de Physiscs, Raleigh, NC.

2:30 PM Q2.4
ROOM TEMPERATURE BAND-EDGE LUMINESCENCE FROM SILICON GRAINS PREPARED BY THE RECRYSTALLIZATION OF MESOPOROUS SILICON, Karen L. Moore, Univ of Rochester, Inst of Optics, Rochester, NY; Leonid Tsybeskov, Philippe M. Fauchet, Univ of Rochester, Dept of Electrical Engr, Rochester, NY; D. G. Hall, Univ of Rochester, Inst of Optics, Rochester, NY.

2:45 PM Q2.5
FERROMAGNETIC PROPERTIES OF SPARK-PROCESSED PHOTOLUMINESCING SILICON, Jonathan Hack, Matthias H. Ludwig, W. Geerts, Rolf E. Hummel, Univ of Florida, Dept of MS&E, Gainesville, FL.

3:00 PM BREAK

SESSION Q3: PHOTOLUMINESCENCE OF Si/SiO2 NANOSTRUCTURES
Chair: John D. Budai
Monday Afternoon, December 2, 1996
Salon G (M)

3:30 PM *Q3.1
VISIBLE LUMINESCENCE IN Si/SiO2 SUPERLATTICES, David J. Lockwood, National Research Council, Inst for Microstructural Sciences, Ottawa, CANADA.

4:00 PM Q3.2
PHOTOLUMINESCENCE MECHANISM OF Si QUANTUM DOTS AND WELLS, Yoshihiko Kanemitsu, Univ of Tsukuba, Inst Physics, Ibaraki, JAPAN.

4:15 PM Q3.3
POSSIBLE MECHANISM OF THE 30-100 ps FAST AND EFFICIENT PHOTOLUMINESCENCE FROM nc-Si/a-SiO DOPED WITH TRANSITION METALS, Stan Veprek, Th. Wirschem, J. Dian, S. Perna, R. Merica, M. Veprek-Heijman, Technische Univ Munich, Inst for Chemistry of Inorganic Matls, Garching, GERMANY; V. Perina, Inst of Nuclear Physics, Rez u Prahy, CZECH REPUBLIC; R. Heinecke, Technische Univ Munich, Inst for Physical Chem, Garching, GERMANY.

4:30 PM Q3.4
LIGHT EMISSION FROM INTRINSIC AND DOPED SILICON-RICH SILICON OXIDE: FROM THE VISIBLE TO 1.6 m, Leonid Tsybeskov, Univ of Rochester, Dept of Electrical Engr, Rochester, NY; Karen L. Moore, Univ of Rochester, Inst of Optics, Rochester, NY; Philippe M. Fauchet, Univ of Rochester, Dept of Electrical Engr, Rochester, NY; D. G. Hall, Univ of Rochester, Inst of Optics, Rochester, NY.

4:45 PM Q3.5
ANNEALING BEHAVIOUR OF PHOTOLUMINESCENCE OF PECVD SILICON-RICH SILICA, Anthony J. Kenyon, Philip F. Trwoga, Univ College London, Dept of E&EC, London, UNITED KINGDOM; Christopher W. Pitt, Univ College London, Dept of Electronic & Electrical Engr, London, UNITED KINGDOM; Gunther Rehm, Friedrich-Alexander Univ, Nurnberg, GERMANY.

SESSION Q4: POSTER SESSION: THEORY OF NANO/MICROCRYSTALLINE SEMICONDUCTORS
Chair: Paul Alivisatos
Monday Evening, December 2, 1996
8:00 P.M.
Grand Ballroom/Constitution (S)

Q4.1
MOLECULAR DYNAMIC SIMULATIONS OF SEMICONDUCTOR CLUSTERS, Girija Dubey, Godfrey Gumbs, CUNY-Hunter College, Dept of Physics & Astronomy, New York, New York.

Q4.2
AN AB INITIO STUDY OF VIBRATIONAL PROPERTIES OF SILICON NANOCLUSTERS, Jacob L. Gavartin, Univ of Liverpool, Dept of MS&E, Liverpool, UNITED KINGDOM; Clarence C. Matthai, Univ of Wales-Cardiff, Dept of Physics & Astronomy, Cardiff, UNITED KINGDOM.

Q4.3
THEORY OF PRESSURE EFFECTS ON SILICON NANOCRYSTALLITES, Guy Allan, Christophe Delerue, Michel Lannoo, IEMN-ISEN, Villeneuve d'Ascq, FRANCE.

Q4.4
THEORETICAL THERMAL CONDUCTIVITY OF POROUS SILICON: NONLINEAR BEHAVIOR, Jesus E. Lugo, UNAM, Facultad de Ciencias, Cuernavaca , MEXICO; Jesus A. del Rio, UNAM, Laboratorio de Energia Solar IIM, Temixco, MEXICO; Julia Taguena-Martinez, UNAM, Inst de Invest en Materials, Mexico City, MEXICO.

Q4.5
AND ELECTRONIC PROPERTIES OF SMALL HYDROGENATED SILICON CLUSTERS: Si H and Si H_x^+ FILMS, Margit Zacharias, Univ of Rochester, Dept of Electrical Engr, Rochester, NY.

Q5.2
MULTICOLOR-EFFECTS OF LUMINESCING, NANOSTRUCTURED SILICON AFTER SPARK-PROCESSING IN PURE AND COMPOSITE GASES, Matthias H. Ludwig, A. Augustin, Rolf E. Hummel, Univ of Florida, Dept of MS&E, Gainesville, FL.

Q5.3
VISIBLE PHOTOLUMINESCENCE FROM Si ION-IMPLANTED AND THERMALLY ANNEALED SiO FILMS, Yoshihiko Kanemitsu, Univ of Tsukuba, Inst Physics, Ibaraki, JAPAN; T. Komoda, Matsushita Electric Works Ltd, UK R&D Lab, Surrey, UNITED KINGDOM; N. Shimizu, S. Okamoto, Univ of Tsukuba, Inst Physics, Ibaraki, JAPAN; P. L.F. Hemment, B. J. Sealy, Univ of Surrey, Dept of Electronic & Electrical Engr, Surrey, UNITED KINGDOM.

Q5.4
THE ROLE OF DEFECTS AND BAND-TAIL STATES IN THE OBSERVED LUMINESCENCE FROM ION-IMPLANTED Si IN A SILICA MATRIX, Soumyendu Guha, Naval Research Laboratory, Washington, DC.

Q5.5
ANNEALING STUDIES OF VISIBLE LIGHT EMISSION FROM SILICON NANOCRYSTALS PRODUCED BY IMPLANTATION, Giorgio Ghislotti, Brookhaven National Laboratory, Dept of Applied Science, Upton, NY; Bent Nielsen, Brookhaven National Laboratory, Dept of Physics, Upton, NY; B. Sheey, F. DiMauro, Brookhaven National Laboratory, Dept of Chemistry, Upton, NY; F. Corni, Univ di Modena, Dipartimento di Fisica, Modena, ITALY; R. Tonini, G. Ottaviani, Univ di Modena, Dept di Fisica, Modena, ITALY.

Q5.6
Si -IMPLANTED SiO AS A LUMINESCING NANOPARTICLE SYSTEM, Toni Schuster, Thomas Dittrich, H. E. Porteanu, Thomas Fischer, Erich Hechtl, Vesselinka Petrova-Koch, Frederick Koch, Technische Univ Munich, Dept of Physics, Garching, GERMANY.

Q5.7
PHOTOLUMINESCENCE FROM ULTRA THIN SiO LAYERS CONTAINING nm-SIZED SILICON CRYSTALLITES, Jan Linnros, A. Galeckas, Royal Inst of Technology, Dept of Electronics, Stockholm, SWEDEN; V. Grivickas, Royal Inst of Technology, Kista-Stockholm, SWEDEN.

Q5.8
PHOTOLUMINESCENCE CHARACTERISTICS OF HF-TREATED SILICON NANOCRYSTALS , Shinji Nozaki, Univ of Electro-Communications, Dept of Communication & Systems, Tokyo, JAPAN; Youichi Takakura, Seiichi Sato, Hiroshi Morisaki, Univ Electro-Communications, Dept of Communication & Systems, Tokyo, JAPAN.

Q5.9
UV AND BLUE PHOTOLUMINESCENCE FROM SILICON NANOCOLLOIDS, Shingo Iwasaki, Keisaku Kimura, Himeji Inst of Technology, Dept of Materials Science, Hyogo, JAPAN.

Q5.10
STRUCTURAL DISORDER IN VISIBLY LUMINESCING SILICON NANOPARTICLES, Eric Werwa, Kirk D. Kolenbrander, MIT, Dept of MS&E, Cambridge, MA; Jay B. Ewing, Reed College, Dept of Physics, Portland, OR; Arun A. Seraphin, Inst for Defense Analyses, Science & Technology Div, Alexandria, VA.

Q5.11
NANO-STRUCTURED SILICON-BASED FILMS WITH VISIBLE LIGHT EMISSION SYNTHESIZED BY LASER ABLATION, Tetsuya Makimura, Univ of Tsukuba, Inst of Materials Science, Ibaraki, JAPAN; Kouichi Murakami, Yasuhiko Kunii, Naoto Ono, Univ of Tsukuba, Inst Materials Science, Ibaraki, JAPAN.

Q5.12
LUMINESCENCE PROPERTIES OF Si NANOCRYSTALS, Samy El-Shall, Shoutian Li, Stuart Silvers, Virginia Commonwealth Univ, Dept of Chemistry, Richmond, VA.

Q5.13
OPTICAL PROPERTIES OF SiGe ALLOY NANOCRYSTALLITES PREPARED BY PULSED LASER ABLATION IN INERT GAS AMBIENT, Yuka Yamada, Matsushita Research Inst Tokyo Inc, Opto-Electro Mechanics Research Lab, Kawasaki, JAPAN; Takaaki Orii, Univ of Tsukuba, Inst of Applied Physics, Ibaraki, JAPAN; Takehito Yoshida, Matsushita Research Inst Tokyo Inc, Opto-Electro Mechanics Research Lab, Kawasaki, JAPAN.

Q5.14
SOLUTION SYNTHESIS OF Ge NANOCLUSTERS, Susan M. Kauzlarich, Boyd R. Taylor, Univ of California-Davis, Dept of Chemistry, Davis, CA.

Q5.15
TWO PHOTON SPECTROSCOPY OF Si NANOCLUSTERS, David E. Bliss, Stewart M. Cameron, Sandia National Laboratories, Albuquerque , NM; Jess P. Wilcoxon, Sandia National Laboratories, Org 1152, Albuquerque, NM.

Q5.16
THE RECOMBINATION STATISTIC OF THE VISIBLE PHOTOLUMINESCENCE OF Si NANOCRYSTALS, Joachim Diener, Dmitri Kovalev, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Moshe Ben-Chorin, Weizmann Inst of Science, Dept of Chemical Physics, Rehovot, ISRAEL; Sergey D. Ganichev, Univ Regensburg, Inst Experimentelle und Angewandte Physik, Regensburg, GERMANY; G. Polisski, Frederick Koch, Technische Univ Munich, Dept of Physics, Garching, GERMANY.

Q5.17
LUMINESCENCE POLARIZATION MEMORY STUDIES OF RESONANTLY EXCITED Si NANOPARTICLES, Dmitri Kovalev, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Moshe Ben-Chorin, Weizmann Inst of Science, Dept of Chemical Physics, Rehovot, ISRAEL; Joachim Diener, Boris Averboukh, G. Polisski, Frederick Koch, Technische Univ Munich, Dept of Physics, Garching, GERMANY.

Q5.18
RAMAN SCATTERING INVESTIGATION OF SUPERCONDUCTIVITY IN CLATHRATES, Shaoli Fang, A. M. Rao, Leonid Grigorian, P. C. Eklund, Univ of Kentucky, Dept of Physics & Astronomy, Lexington, KY; Gene Dresselhaus, MIT, Dept of Physics, Cambridge, MA; Mildred S. Dresselhaus, MIT, Dept of EECS & Physics, Cambridge, MA; Shoji Yamanaka, H. Kawaji, Hiroshima Univ, Dept of Applied Chemistry, Hiroshima, JAPAN.

Q5.19
SEARCH FOR WIDE-BANDGAP SEMICONDUCTING PHASES OF Si CLATHRATES, Leonid Grigorian, Shaoli Fang, A. M. Rao, P. C. Eklund, Univ of Kentucky, Dept of Physics & Astronomy, Lexington, KY.

Q5.20
STRUCTURE AND VIBRATIONAL PROPERTIES OF ISOLATED CARBON NANOCRYSTALLITES, V. I. Merkulov, J. S. Lannin, Pennsylvania State Univ, Dept of Physics, University Park, PA; J. M. Cowley, Arizona State Univ, Dept of Physics, Tempe, AZ.

Q5.21
ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF THE STRUCTURES BASED ON ULTRATHIN DIAMOND-LIKE FILMS, V. I. Polyakov, Inst of Radio Engr & Electronics , Dept of Microelectronics, Moscow, RUSSIA; P. I. Perov, Inst of Radio Engr & Electronics , Moscow, RUSSIA; A. I. Rukovishnikov, A. V. Khomich, N. M. Rossukanyi, Inst of Radio Engr & Electronics , Dept of Microelectronics, Moscow, RUSSIA; A. M. Baranov, NPO Vakuummashpribor, Moscow, RUSSIA; B. L. Druz, Edward Ostan, A. Hages, Veeco Instruments.

SESSION Q6: POSTER SESSION: PREPARATION, PROCESSING, AND PROPERTIES OF III-V, II-VI, AND OTHER SEMICONDUCTOR NANOSTRUCTURES
Chair: Paul Alivisatos
Monday Evening, December 2, 1996
8:00 P.M.
Grand Ballroom/Constitution (S)

Q6.1
MAGNETO-CAPACITANCE MEASUREMENTS ON MOCVD GROWN InGaAs QUANTUM DOTS, Adam Babinski, R. Leon, Australian National Univ, Dept of Electronic Matls Engr, Canberra, AUSTRALIA; C. Jagadish, Australian National Univ, Deptof Electronic Matls Engr, Canberra, AUSTRALIA.

Q6.2
DETERMINATION OF OPTICAL PROPERTIES OF THE MICRO FACETTED InGaAs QUANTUM WELLS GROWN ON V-GROOVED SUBSTRATE USING MAGNETOPHOTOLUMINESCENCE, Sung-Bock Kim, Jeong-Rae Ro, El-Hang Lee, ETRI, Dept of Research, Taejon, SOUTH KOREA.

Q6.3
THE FABRICATION OF SEMICONDUCTOR NANOSTRUCTURE ARRAYS ON A SILICON SUBSTRATE USING AN ANODIZED ALUMINUM TEMPLATE, S. P. McGinnis, West Virginia Univ, Dept of Electrical & Computer Engr, Morgantown, WV; Biswajit Das, West Virginia Univ, Microelectronic Systems Research Center, Morgantown, WV; J. N. Cleary, West Virginia Univ, Dept of Chemical Engr, Morgantown, WV.

Q6.4
EFFECTS OF Mn DISTRIBUTION CONTROLLED BY CARBOXYLIC ACIDS ON PHOTOLUMINESCENCE INTENSITY OF NANOSIZED ZnS:Mn PARTICLES, Tetsuhiko Isobe, Takahiro Igarashi, Mamoru Senna, Keio Univ, Dept of Applied Chemistry, Yokohama, JAPAN.

Q6.5
SYNTHESIS OF Mn DOPED CdS NANOCRYSTALS: ESR AND EXAFS OF THE LUMINESCENCE ACTIVATOR, Guillaume Counio, S. Esnouf, T. Gacoin, Philippe Barboux, Jean-Pierre Boilot, Ecole Polytechnique , Laboratoire Physique de la Matiere Condensee, Palaiseau, FRANCE.

Q6.6
SURFACE DERIVATIZATION OF NANOCRYSTALLINE CdSe SEMICONDUCTORS, Jin-Kyu Lee, Moungi G. Bawendi, Masaru Kuno, MIT, Dept of Chemistry, Cambridge, MA.

Q6.7
FEMTOSECOND SPECTROSCOPY OF DIRECT- AND INDIRECT-GAP SEMICONDUCTOR NANOCRYSTALS, Victor I. Klimov, Los Alamos National Laboratory, Chem Sci & Tech DIv, Los Alamos, NM; Vladimir A. Karavanskii, Inst of General Physics, Moscow, RUSSIA; Duncan W. McBranch, Los Alamos National Laboratory, CST-6, Los Alamos, NM; Geoffrey F. Strouse, Los Alamos National Laboratory, CST-1, Los Alamos, NM.

Q6.8
THE ROLE OF TRAPS IN QUANTUM CONFINED ZINC SELENIDE NANOCRYSTALS, Christine A. Smith, Univ of California-Davis, Dept of CE&MS, Davis, CA; Howard W.H. Lee, Lawrence Livermore National Laboratory, Photonics Group, Livermore , CA; Subhash H. Risbud, Univ of California-Davis, Dept of CE&MS, Davis, CA; J. Diane Cooke, Lawrence Livermore National Laboratory, New Technologies Engr Div, Livermore, CA.

Q6.9
OPTICAL ABSORPTION AND PHOTOLUMINESCENCE FROM PbSe NANOCRYSTALS, Soumyendu Guha, Naval Research Laboratory, Washington, DC; Subhash H. Risbud, Univ of California-Davis, Dept of CE&MS, Davis, CA; V. Lappert, B. Bonner, Univ of California-Davis, Davis, CA.

Q6.10
STRUCTURE OF SELENIUM AND ALKALI-SELENIUM NANOCLUSTERS IN ZEOLITE, Marie-Louise Saboungi, Andreas Goldbach, David C.L. Price, Argonne National Laboratory, Dept of Matls Science, Argonne, IL.

Q6.11
SYNTHESIS AND OPTICAL PROPERTIES OF MoS NANOCLUSTERS IN THE STRONG QUANTUM CONFINEMENT REGIME, George A. Samara, Sandia National Laboratories, Dept of Nano & Adv Matls Chemistry, Albuquerque, NM; Jess P. Wilcoxon, Paula P. Newcomer, Sandia National Laboratories, Org 1152, Albuquerque, NM.

Q6.12
THE INVESTIGATION OF DONOR AND ACCEPTOR STATES IN THE NANOPARTICLES OF PbI LAYERED SEMICONDUCTOR, Efrat Lifshitz, Technion-Israel Inst of Tech, Dept of Chemistry, Haifa, ISRAEL.

Q6.13
OPTICAL PROPERTIES OF CUPROUS OXIDE NANOCRYSTALS, Paul J. Rodney, Univ of Rochester, Laser Energetics Lab, Rochester , NY; Michal I. Freedhoff, American Inst of Physics, Public Informaton Div, College Park, MD; Alfred P. Marchetti, Univ of Rochester, Dept of Chemistry, Rochester, NY; George L. McLendon, Princeton Univ, Dept of Chemistry, Princeton, NJ; Philippe M. Fauchet, Univ of Rochester, Dept of Electrical Engr, Rochester, NY.

Q6.14
OPTICAL PROPERTIES OF ELECTRODEPOSITED COPPER/CUPROUS OXIDE NANOCOMPOSITES, Jay A. Switzer, Eric W. Bohannan, Teresa D. Golden, Chen-Jen Hung, Univ of Missouri-Rolla, Rolla, MO; Mark Shumsky, Univ of Missouri-Rolla, Dept of Ceramic Engr, Rolla, MO.

Q6.15
PREPARATION, CHARACTERIZATION AND OPTICAL PROPERTIES OF ZnO NANOPARTICLES, Shoutian Li, Samy El-Shall, Stuart Silvers, Virginia Commonwealth Univ, Dept of Chemistry, Richmond, VA.

Q6.16
MICROSTRUCTURE OF Tb-DOPED Y _3 DOUBLE-BARRIER QUANTUM WELL MICROSTRUCTURE, Harley T. Johnson, L. B. Freund, A. Zaslavsky, Brown Univ, Engineering Div, Providence, RI.

Q7.2
EFFECT OF QUANTUM-WELL STRUCTURES ON THE THERMOELECTRIC FIGURE OF MERIT IN Si/Si Ge SYSTEM, Xiangzhong Sun, MIT, Dept of Physics, Cambridge, MA; Mildred S. Dresselhaus, MIT, Dept of EECS & Physics, Cambridge, MA; Kang L. Wang, Martin O. Tanner, Univ of California-Los Angeles, Dept of Electrical Engr, Los Angeles, CA.

Q7.3
ANALYSIS OF TWO-PHOTON ABSORPTION IN ZnSe QUANTUM WELL, Elena Hartung, Univ of North Carolina, Dept of Physics, Wilmington, NC.

Q7.4
GROWTH AND CHARACTERIZATION OF ZnMnSSe ALLOY FILMS, Fred Semendy, U.S. Army Research Laboratory, University Park, PA; Frank S. Flack, Pennsylvania State Univ, Dept of Physics, University Park, PA; Neil Bahmba, U.S. Army Research Laboratory, University Park, PA; Nitin Samarth, Ioulia Smortchkova, Pennsylvania State Univ, Dept of Physics, University Park, PA.

Q7.5
THERMOELECTRIC PROPERTIES OF THE SKUTTERUDITE AND ITS THIN FILMS, Baoxing Chen, Jun-Hao Xu, Siqing Hu, Ctirad Uher, Univ of Michigan, Dept of Physics, Ann Arbor, MI.

Q7.6
MAGNETO-RESISTIVE EFFECTS IN Eu14MnPn11 (Pn = Sb, Bi), Susan M. Kauzlarich, Julia Y. Chan, Univ of California-Davis, Dept of Chemistry, Davis, CA.

Q7.7
CONICAL SCAN CRYSTALLOGRAPHY - A NEW TECHNIQUE FOR AUTOMATED CRYSTAL ORIENTATION MEASUREMENT IN THE TRANSMISSION ELECTRON MICROSCOPE, David J. Dingley, TexSEM Laboratories, Provo, UT; Yi Feng, Philips Electronic Instruments Co, Mahwah, NJ; Damian J. Dingley, TexSEM Laboratories, Dept of Software Development, Prove, UT.

Q7.8
IN SITU REAL TIME SPECTROSCOPIC ELLIPSOMETRY APPLIED TO THE GROWTH OF DIFFERENT SEMICONDUCTOR MATERIALS, Pierre Boher, Jean Louis Stehle, SOPRA, Bois Colombes, FRANCE.

SESSION Q8: III-V SEMICONDUCTOR NANOSTRUCTURES
Chair: Toshikazu Shimada
Tuesday Morning, December 3, 1996
Salon G (M)

9:00 AM *Q8.1
SURFACE CHARGE MAPPING OF NANOMETER SCALE PILLAR ARRAYS, Bruce Alphenaar, Cavendish Laboratory, Hitachi Cambridge Lab, Cambridge, UNITED KINGDOM.

9:30 AM Q8.2
LIMITS AND PROPERTIES OF SIZE QUANTIZATION EFFECTS IN IN AS SELF ASSEMBLED QUANTUM DOTS, Klaus Hubert Schmidt, Univ of California-S Barbara, QUEST, Santa Barbara, CA; Gilberto Medeiros-Ribeiro, Hewlett Packard Co, Palo Alto, CA; Michael Cheng, Pierre M Petroff, Univ of California-S Barbara, Dept of Materials, Santa Barbara, CA.

9:45 AM Q8.3
OPTICAL PROPERTIES OF NANO CRYSTALLINE InP IN OPAL 3-DIMENSIONAL GRATINGS, N. P. Johnson, C. M. Sotomayor-Torres, Univ of Glasgow, Dept of Electronics & Electrical Engr, Glasgow, UK; H. E. Yates, Univ of Salford, Dept of Chemistry, Manchester, UNITED KINGDOM; Sergei G. Romanov, A.F. Ioffe Phys-Technical Inst, Physics of Dielectrics & Semiconductors, St. Petersburg, RUSSIA; M. E. Pemble, Univ of Salford, Dept of Chemistry, Manchester, UNITED KINGDOM; V. Butko, A.F. Ioffe Phys-Technical Inst, Physics of Dielectrics & Semiconductors, St. Petersburg, RUSSIA.

10:00 AM BREAK

SESSION Q9: CHEMICAL SYNTHESIS AND PROPERTES OF QUANTUM DOTS
Chair: James R. Heath
Tuesday Morning, December 3, 1996
Salon G (M)

10:30 AM Q9.1
STRUCTURAL INVESTIGATIONS OF COLLOIDAL SEMICONDUCTOR NANOCRYSTAL HETEROSTRUCTURES: FACETTING AND EPITAXY, Andreas V. Kadavanich, Paul Alivisatos, Univ of California-Berkeley, Dept of Chemistry, Berkeley, CA.

10:45 AM Q9.2
PRESSURE- AND TEMPERATURE-INDUCED STRUCTURAL TRANSFORMATION IN SEMICONDUCTOR NANOCRYSTALS, Chia-C Jay Chen, Amy B. Herhold, Paul Alivisatos, Univ of California-Berkeley, Dept of Chemistry, Berkeley, CA.

11:00 AM Q9.3
SYNTHESIS AND CHARACTERIZATION OF HIGHLY LUMINESCENT (CdSe)ZnS QUANTUM DOTS, Frederic V. Mikulec, Bashir O. Dabbousi, MIT, Dept of Chemistry, Cambridge, MA; Klavs F. Jensen, MIT, Dept of Chemical Engr, Cambridge, MA; Moungi G. Bawendi, MIT, Dept of Chemistry, Cambridge, MA; Javier Rodriguez-Viejo, MIT, Dept of Chemical Engr, Cambridge, MA.

11:15 AM Q9.4
CATHODOLUMINESCENCE AND PHOTOLUMINESCENCE OF CdSe/ZnS THIN FILM QUANTUM DOT COMPOSITES, Klavs F. Jensen, Javier Rodriguez-Viejo, MIT, Dept of Chemical Engr, Cambridge, MA; Bashir O. Dabbousi, MIT, Dept of Chemistry, Cambridge, MA; Jason R. Heine, MIT, Dept of Chemical Engr, Cambridge, MA; Hedi Mattoussi, MIT, Dept of Chemistry, Cambridge, MA; Jurgen Michel, MIT, Dept of MS&E, Cambridge, MA; Moungi G. Bawendi, MIT, Dept of Chemistry, Cambridge, MA.

11:30 AM Q9.5
GROUP IV NANOCRYSTALS PREPARED BY A LOW-TEMPERATURE SOLUTION ROUTE, Susan M. Kauzlarich, Richard A. Bley, Boyd R. Taylor, Univ of California-Davis, Dept of Chemistry, Davis, CA; Howard W.H. Lee, Lawrence Livermore National Laboratory, Photonics Group, Livermore , CA; Gilardo R. Delgado, Univ of California-Davis, Dept of Applied Science, Livermore, CA.

11:45 AM Q9.6
COMPARATIVE OPTICAL STUDIES OF CHEMICALLY SYNTHESIZED SILICON NANOCRYSTALS, Howard W.H. Lee, Lawrence Livermore National Laboratory, Photonics Group, Livermore , CA; Gilardo R. Delgado, Univ of California-Davis, Dept of Applied Science, Livermore, CA; Susan M. Kauzlarich, Richard A. Bley, Univ of California-Davis, Dept of Chemistry, Davis, CA.

SESSION Q10: NUCLEATION AND GROWTH OF NANO/MICROCRYSTALLINE SILICON FILMS
Chair: Masakiyo Matsumura
Tuesday Afternoon, December 3, 1996
Salon G (M)

1:30 PM *Q10.1
GROWTH AND STRUCTURE OF MICROCRYSTALLINE SILICON PREPARED WITH GLOW DISCHARGE AT VARIOUS PLASMA EXCITATION FREQUENCIES, Friedhelm Finger, Forschungszentrum Julich, ISI-PV, Julich, GERMANY; Reinhard Carius, Peter Hapke, Lothar Houben, KFA Julich GmbH, ISI-PV, Julich, GERMANY; Martina Luysberg, Univ of California-Berkeley, Dept of MS&ME, Berkeley, CA; Marian Tzolov, Bulgaria Academy of Sciences, Central Lab for Solar Energy & New Energy Sources, Sofia, BULGARIA.

2:00 PM Q10.2
SUBSTRATE-SURFACE EFFECT ON INITIAL GROWTH PROCESS OF MICROCRYSTALLINE SILICON FILMS, Kazunobu Tanaka, NAIR, Ibaraki, JAPAN; Kazuyuki Ikuta, NAIR, Joint Res Ctr for Atom Technology, Ibaraki, JAPAN; Satoshi Yamasaki, Tetsuji Yasuda, NAIR, Ibaraki, JAPAN; Jung-Woo Park, JRCAT-ATP, Ibaraki, JAPAN.

2:15 PM Q10.3
GRAIN-SIZE CONTROL OF NANOCRYSTALLINE SILICON BY PULSED GAS PLASMA PROCESS, Toru Ifuku, Masanori Otobe, Tokyo Inst of Technology, Dept of Physical Electronics, Tokyo, JAPAN; Akira Itoh, Tokyo Inst of Technology, Research Ctr for Quantum Effect Electronics, Tokyo, JAPAN; Shunri Oda, Tokyo Inst of Technology, Dept of Physical Electronics, Tokyo, JAPAN.

2:30 PM Q10.4
PREPARATION OF MICROCRYSTALLINE SILICON WITH THE LAYER-BY-LAYER TECHNIQUE AT VARIOUS PLASMA EXCITATION FREQUENCIES, Peter Hapke, Reinhard Carius, KFA Julich GmbH, ISI-PV, Julich, GERMANY; Friedhelm Finger, Forschungszentrum Julich, ISI-PV, Julich, GERMANY; Andreas Lambertz, KFA Julich GmbH, ISI-PV, Julich, GERMANY; Heribert Wagner, Forschungszentrum Julich, ISI-PV, Julich, GERMANY; Oliver Vetterl, KFA Julich GmbH, ISI-PV, Julich, GERMANY.

2:45 PM BREAK

SESSION Q11: PREPARATION, PROPERTIES, AND APPLICATIONS OF POLYCRYSTALLINE SILICON FILMS
Chair: Kazunobu Tanaka
Tuesday Afternoon, December 3, 1996
Salon G (M)

3:15 PM *Q11.1
EXCIMER-LASER CRYSTALLIZATION OF SILICON-CARBON FILMS AND THEIR APPLICATION TO HETERO THIN-FILM TRANSISTORS, Masakiyo Matsumura, Kwansoo Choi, Tokyo Inst of Technology, Dept of Physical Electronics, Meguro-ku, Tokyo, JAPAN.

4:00 PM Q11.3
SINGLE-CRYSTAL SILICON FILMS VIA A LOW-SUBSTRATE-TEMPERATURE EXCIMER-LASER CRYSTALLIZATION METHOD, Robert S. Sposili, Columbia Univ, Dept of Chem/Mining Engr & Matls Science, New York, NY; M. A. Crowder, Columbia Univ, Dept of Chemical/Mining Engr & Matls Science, New York, NY; James S. Im, Columbia Univ, Dept of CE&MS, New York, NY.

4:15 PM Q11.4
PURELY INTRINSIC POLYSILICON FILMS BY HOT WIRE CHEMICAL VAPOR DEPOSITION, J. K. Rath, K. F. Feenstra, Utrecht Univ, Debye Inst, Ultrecht, NETHERLANDS; D. Ruff, Philipps Univ Marburg, Marburg, GERMANY; H. Meiling, Utrecht Univ, Debye Inst, Ultrecht, NETHERLANDS; Ruud Schropp, Utrecht Univ, Atomic and Interface Physics, Utrecht, NETHERLANDS.

4:30 PM Q11.5
LOW-TEMPERATURE FORMATION OF DEVICE-QUALITY POLYSILICON FILMS BY CAT-CVD METHOD, Hideki Matsumura, JAIST, Dept of Matls Science, Ishikawa, JAPAN; Akira Heya, Ritsuko Iizuka, JAIST, Ishikawa, JAPAN; Akira Izumi, JAIST, Dept of Materials Science, Ishikawa, JAPAN.

4:45 PM Q11.6
LARGE GRAIN MICRO- AND POLY-CRYSTALLINE SILICON DEPOSITED AT 250 C BY PULSED-GAS PECVD, Easwar Srinivasan, Gregory N. Parsons, Steve J. Ellis, North Carolina State Univ, Dept of Chemical Engr, Raleigh, NC; Robert J. Nemanich, North Carolina State Univ, Dept of Physics, Raleigh, NC.

SESSION Q12: PREPARATION, PROCESSING, AND PROPERTIES OF POROUS SILICON I
Chair: Leigh Canham
Wednesday Morning, December 4, 1996
Salon G (M)

8:30 AM *Q12.1
POROUS SILICON FROM HYDROGENATED AMORPHOUS SILICON: COMPARISON WITH CRYSTALLINE POROUS SILICON, R. B. Wehrspohn, Jean-Noel Chazalviel, Ecole Polytechnique , Lab Physique de la Matiere Condensee, Palaiseau, FRANCE; F. Ozanam, Ecole Polytechnique , Lab de Physique de la Matiere Condensee, Palaiseau, FRANCE; I. Solomon, Ecole Polytechnique , Lab Phys de la Matiere Condensee, Palaiseau, FRANCE.

9:00 AM Q12.2
COMPARATIVE THEORETICAL STUDY OF AMORPHOUS AND CRYSTALLINE SILICON CLUSTERS, Michel Lannoo, Christophe Delerue, Guy Allan, IEMN-ISEN, Villeneuve d'Ascq, FRANCE.

9:15 AM Q12.3
CONTROL OF THE SHAPE AND ORIENTATION OF Si CRYSTALLITES IN POROUS SILICON, G. Polisski, Boris Averboukh, Dmitri Kovalev, Frederick Koch, Technische Univ Munich, Dept of Physics, Garching, GERMANY.

9:30 AM Q12.4
ATOMIC LAYER ETCHING OF POROUS SILICON, Carsten Voelkmann, Univ of California-Berkeley, Dept of Physics, Berkeley, CA; Vesselinka Petrova-Koch, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Imke Helga Libon, Univ of California-Berkeley, Dept of Physics, Berkeley, CA.

9:45 AM Q12.5
OPTICAL PROPERTIES OF DEUTERIUM TERMINATED POROUS SILICON, Matsumoto Takahiro, ERATO JST, Single Quantum Dot Project, Ibaraki, JAPAN; Yasuaki Masumoto, ERATO JST, Single Quantam Dot Proj, Tsukuba, JAPAN; Koshida Nobuyoshi, Tokyo Univ of Agric & Tech, Electronic & Information Engr, Tokyo, JAPAN.

10:00 AM Q12.6
POROUS SILICON LAYER FORMATION AND HYDROGEN INCORPORATION, Philippe Allongue, Catherine Henry de Villeneuve, ESPCI, Dept de Physique des Liquides et Electrochimie, Paris, FRANCE; Jean Emmanuel Peou, Claude Levy-Clement, CNRS, Lab Physique des Solides de Bellevue, Meudon, FRANCE.

10:15 AM BREAK

SESSION Q13: FUNDAMENTAL OPTICAL AND ELECTRONIC PROPERTIES OF SILICON NANOSTRUCTURES
Chair: Michel Lannoo
Wednesday Morning, December 4, 1996
Salon G (M)

10:30 AM Q13.1
SOME CRITERIA FOR THE DESIGN OF EFFICIENT SILICON NANOSTRUCTURES, Jean-Claude Vial, Irina Mihalcescu, Univ J. Fourier Grenoble, Lab Spectrometrie Physique, Saint Martin d'Heres, FRANCE.

10:45 AM Q13.2
A MICROSCOPIC MODEL FOR THE DIELECTRIC FUNCTION OF POROUS SILICON, M. Cruz, UNAM, Inst de Invest en Materials, Mexico City, MEXICO; Marcela R. Beltran, UNAM, Inst de Inves en Materials, Mexico City, MEXICO; C. Wang, Julia Taguena-Martinez, UNAM, Inst de Invest en Materials, Mexico City, MEXICO.

11:00 AM Q13.3
SYNCHROTRON RADIATION-INDUCED OPTICAL LUMINESCENCE FROM POROUS SILICON: RECENT OBSERVATIONS, Ian B. Coulthard, T. K. Sham, D. -T. Jiang, Univ of Western Ontario, Dept of Chemistry, London, CANADA; K. H. Tan, Univ of Wisconsin-Madison, CSRF, Stoughton, WI.

11:15 AM Q13.4
ELECTRONIC STRUCTURE OF SILICON NANOCRYSTALS AS A FUNCTION OF PARTICLE SIZE*, Tony W.H. van Buuren, Lloyd L. Chase, Lou J. Terminello, Long N. Dinh, Lawrence Livermore National Laboratory, C&MS, Livermore, CA.

11:30 AM Q13.5
OPTICAL PROPERTIES OF FREE-STANDING ULTRAHIGH POROSITY SILICON FILMS PREPARED BY SUPERCRITICAL DRYING, J. Von Behren, Philippe M. Fauchet, Univ of Rochester, Dept of Electrical Engr, Rochester, NY; E. H. Chimowitz, Univ of Rochester, Dept of Chemical Engr, Rochester, NY; C. T. Lira, Michigan State Univ, Dept of Chemical Engr, East Lansing, MI.

11:45 AM Q13.6
ULTRAFAST CARRIER DYNAMICS IN NANOPOROUS SILICON, K. Burak Ucer, J. Von Behren, Philippe M. Fauchet, Univ of Rochester, Dept of Electrical Engr, Rochester, NY.

SESSION Q14: ELECTRONIC PROPERTIES AND APPLICATIONS OF POROUS SILICON
Chair: Timothy Cox
Wednesday Afternoon, December 4, 1996
Salon G (M)

1:30 PM Q14.1
THEORETICAL ANALYSIS OF ELECTRO-OPTICAL PROPERTIES OF NANO-POROUS SILICON, Evelyne Lampin, Christophe Delerue, Guy Allan, Michel Lannoo, IEMN-ISEN, Lille, FRANCE.

1:45 PM Q14.2
ELECTRON TIME-OF-FLIGHT MEASUREMENTS IN POROUS SILICON, Eric A. Schiff, Syracuse Univ, Dept of Physics, Syracuse, NY; Philippe M. Fauchet, Univ of Rochester, Dept of Electrical Engr, Rochester, NY; Prasanna N. Rao, Qing Gu, Syracuse Univ, Dept of Physics, Syracuse, NY; Leonid Tsybeskov, Univ of Rochester, Dept of Electrical Engr, Rochester, NY.

2:00 PM Q14.3
PHOTOVOLTAIC DEVICES BASED ON POROUS POLYCRYSTALLINE SILICON, S. P. Duttagupta, Philippe M. Fauchet, Univ of Rochester, Dept of Electrical Engr, Rochester, NY; A. C. Ribes, H. F. Tiedje, S. Damaskinos, T. E. Dixon, D. E. Brodie, Univ of Waterloo, Dept of Physics, Waterloo, ON; Santosh K. Kurinec, Rochester Inst of Technology, Dept of Microelectronics Engr, Rochester, NY.

2:15 PM Q14.4
OPTICAL SENSORS BASED ON POROUS SILICON MULTILAYERS: A PROTOTYPE, Wolfgang Theiss, Rudiger Arens-Fischer, Stefan Hilbrich, RWTH Aachen, I. Physik Inst, Aachen, GERMANY; Michael Berger, Michael Kruger, Markus Thonissen, KFA Julich GmbH, ISI, Julich, GERMANY.

2:30 PM Q14.5
POROUS SILICON PERMEATED WITH Sn-V-O AS NOVEL SENSOR DEVICE FOR HYDROCARBONS DETECTION, Renato Angelucci, Antonella Poggi, Leonello Dori, Andrea Parisini, Paolo Negrini, CNR-Lamel, Bologna, ITALY; Concetta Critelli, Univ di Bologna, Dip Chimica Industriale e dei Materiali, Bologna, ITALY.

2:45 PM Q14.6
POROUS SILICON RESEARCH AND APPLICATION, Vitaly Bondarenko, A. Ferrari, Marco Balucani, Univ "La Sapienza" Roma, Dept of Electronics, Rome, ITALY; Alexander Dorofeev, Nikolay Vorozov, BSUIR, Dept of Microelectronics, Minsk, BELARUS; S. La Monica, Univ "La Sapienza" Roma, Dept of Electronics, Rome, ITALY; Leonid Dolgyi, BSUIR, Dept of Microelectronics, Minsk, BELURAS; Nikolay Kazuchits, Belarusian State Univ, Dept of Semiconductors, Minsk, BELARUS; G. Maiello, Univ "La Sapienza" Roma, Dept of Electronics, Rome, ITALY; Galina Troyanova, Valentina Yakovtseva, BSUIR, Dept of Microelectronics, Minsk, BELURAS; G. Masini, Univ "La Sapienza" Roma, Dept of Electronics, Rome, ITALY.

3:00 PM BREAK

SESSION Q15: ELECTROLUMINESCENCE AND APPLICATIONS OF SILICON NANOSTRUCTURES
Chair: Christophe Delerue
Wednesday Afternoon, December 4, 1996
Salon G (M)

3:30 PM Q15.1
A STUDY OF THE FACTORS WHICH DETERMINE THE MODULATION SPEED OFAN EFFICIENT POROUS SILICON LED, Timothy Cox, DRA Malvern, Electronics Sector, Great Malvern, UNITED KINGDOM.

3:45 PM Q15.2
NONLINEAR ELECTRICAL FUNCTIONS OF POROUS SILICON LIGHT-EMITTING DIODES, Koki Ueno, Tokyo Univ of Agric & Tech, Dept of Electronics & Info Engr, Tokyo, JAPAN; Hideki Koyama, Tokyo Univ of Agric & Tech, Dept of Electronics & Info Engr, Tokyo, JAPAN; Nobuyoshi Koshida, Tokyo Univ of Agric & Tech, Faculty of Technology, Tokyo, JAPAN.

4:00 PM Q15.3
ELECTRICAL AND LIGHT-EMITTING PROPERTIES OF SILICON NANOCRYSTALLITES PREPARED BY PULSED LASER ABLATION, Takehito Yoshida, Matsushita Research Inst Tokyo Inc, Opto-Electro Mechanics Reseach Lab, Kawasaki, JAPAN; Yuka Yamada, Matsushita Research Inst Tokyo Inc, Opto-Electro Mechanics Research Lab, Kawasaki, JAPAN; Takaaki Orii, Univ of Tsukuba, Inst of Applied Physics, Ibaraki, JAPAN.

4:15 PM Q15.4
ELECTROLUMINESCENT DEVICES BASED ON ZERO- AND ONE-DIMENSIONAL SILICON STRUCTURES, A. G. Nassiopoulos, NCSR "Demokritos", Inst of Microelectronics, Athens, GREECE; V. Ioannou-Souglerides, S. Grigoropoulos, Inst of Microelectronics, Athens, GREECE; D. Papadimitriou, National Tech Univ-Athens, Dept of Physics, Athens, GREECE.

4:30 PM Q15.5
INTEGRATING BIPOLAR JUNCTION TRANSISTORS WITH SILICON-BASED LIGHT-EMITTING DEVICES, Karl Hirschman, Leonid Tsybeskov, S. P. Duttagupta, Philippe M. Fauchet, Univ of Rochester, Dept of Electrical Engr, Rochester, NY.

4:45 PM Q15.6
SILICON-BASED OPTICAL INTERCONNECTS, Sergei Lazarouk, Belarusian State Univ, Dept Informatics & Radioelectronics, Minsk, BELARUS; P. Jaguiro, Belarusian State Univ, Dept Informatics & Electronics, Misnk, BYELARUS; S. Katsouba, A. Prohorenko, Belarusian State Univ, Dept Informatics & Radioelectronics, Minsk, BYELARUS; G. Masini, S. La Monica, G. Maiello, A. Ferrari, Univ "La Sapienza" Roma, Dept of Electronics, Rome, ITALY.

SESSION Q16: PHOTOLUMINESCENCE OF QUANTUM DOTS
Chair: Paul Alivisatos
Thursday Morning, December 5, 1996
Salon G (M)

8:30 AM *Q16.1
III-V QUANTUM DOTS: EXCITON RECOMBINATION KINETICS AND SIZE-DEPENDENT TRANSITION DIPOLES, James R. Heath, Univ of California-Los Angeles, Dept of Chemistry & Biochem, Los Angeles, CA; S. H. Kim, J. J. Shlang, R. H. Wolters, Univ of California-Los Angeles, Dept of Chemistry, Los Angeles, CA.

9:00 AM Q16.2
PHOTOLUMINESCENCE SPECTROSCOPY OF SINGLE CADMIUM SELENIDE NANOCRYSTALLITE QUANTUM DOTS, Stephen A. Empedocles, MIT, Cambridge, MA; Moungi G. Bawendi, MIT, Dept of Chemistry, Cambridge, MA; David J. Norris, MIT, Cambridge, MA.

9:15 AM Q16.3
ELECTRONIC STRUCTURE OF O-D EXCITON GROUND STATE IN CdSe NANOCRYSTALS, Maria Chamarro, Univ de Paris VI, Groupe de Physique des Solides, Paris, FRANCE; Mohamed Dib, Catherine Gourdon, Philippe Lavallard, Univ de Paris VI, Groupe de Physique des Solides, Paris, FRANCE; Olga Lublinskaya, Alexei I. Ekimov, A.F. Ioffe Phys-Technical Inst, St. Petersburg, RUSSIA.

9:30 AM Q16.4
THE BAND EDGE LUMINESCENCE OF SURFACE MODIFIED CdSe NANOCRYSTALLITES: PROBING THE LUMINESCING STATE, Masaru K Kuno, Jin-Kyu Lee, Bashir O Dabbousi, Frederick V Mikulec, Moungi G. Bawendi, MIT, Dept of Chemistry, Cambridge, MA.

9:45 AM Q16.5
AUGER QUENCHING OF PHOTOLUMINESCENCE IN NANOSIZE QUATUM DOTS, Alexander L. Efros, Naval Research Laboratory, Nanostructure Optics Section, Washington, DC; Vasili A. Kharchenko, Harvard-Smithsonian Ctr for Astrophysics, Inst for Theorectical Atomic & Mol Physics, Cambridge, MA; Mervine Rosen, Naval Research Laboratory, Nanostructure Optics Section, Washington, DC.

10:00 AM BREAK

SESSION Q17: CHEMICAL AND BIOCHEMICAL APPLICATIONS OF SEMICONDUCTOR NANOSTRUCTURES
Chair: Jean-Claude Vial
Thursday Morning, December 5, 1996
Salon G (M)

10:30 AM *Q17.1
SILICON AS AN ACTIVE BIOMATERIAL, Leigh Canham, DRA Malvern, Electronics Sector, Worcestershire, UK.

11:00 AM Q17.2
LIGHT-INDUCED CHEMICAL REACTIONS ON POROUS AND SINGLE-CRYSTAL Si SURFACES, Eric James Lee, Univ of California-San Diego, Dept of Chemistry, La Jolla, CA; Theodore W. Bitner, Univ of California-San Diego, La Jolla, CA; Michael J. Sailor, Univ of California-San Diego, Dept of Chemistry , La Jolla, CA.

11:15 AM Q17.3
TEM ANALYSIS OF MESOSCALE STRUCTURES COMPOSED OF QUANTUM-CONFINED CdS NANOPARTICLES, Russell F. Pinizzotto, Yandung Chen, Univ of North Texas, Dept of Materials Science, Denton, TX; Jeffery L. Coffer, Texas Christian Univ, Dept of Chemistry, Fort Worth, TX; Young G. Rho, Univ of North Texas, Dept of Materials Science, Denton, TX; Xin Li, Texas Christian Univ, Dept of Chemistry, Fort Worth, TX; Robert M. Pirtle, Irma L. Pirtle, Univ of North Texas, Dept of Biological Sciences, Denton, TX.

11:30 AM Q17.4
QUANTUM DOTS AS INORGANIC DNA-BINDING PROTEINS, Catherine J. Murphy, Univ of South Carolina, Dept of Chemistry & Biochem, Columbia, SC.

11:45 AM Q17.5
STUDIES OF PHOTOREDOX REACTIONS ON NANOSIZE SEMICONDUCTORS, Jess P. Wilcoxon, Sandia National Laboratories, Org 1152, Albuquerque, NM; F. Parsapour, D. F. Kelley, Colorado State Univ, Dept of Chemistry, Fort Collins, CO.

SESSION Q18: PROPERTIES AND DEVICES OF NANO/MICROCRYSTALLINE SILICON FILMS
Chair: Isamu Shimizu
Thursday Afternoon, December 5, 1996
Salon G (M)

1:30 PM *Q18.1
THE ''MICROMORPH'' CELL: A NEW WAY TO HIGH-EFFICIENCY, LOW-TEMPERATURE CRYSTALLINE SILICON SOLAR CELL MANUFACTURING, Herbert Keppner, U. Kroll, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND; P. Torres, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND; J. Meier, S. Dubail, J. A. Anna Selvan, D. Fischer, R. Platz, Michael Goetz, P. Pernet, N. Pellaton Vaucher, R. Tscharner, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND; A. Shah, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND.

2:00 PM Q18.2
GROWTH OF THIN ;SPMlt;p;SPMgt; c-Si:H ON INTRINSIC a-Si:H FOR ;SPMlt;nip;SPMgt; SOLAR CELLS APPLICATION, P. Pernet, Michael Goetz, Herbert Keppner, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND; A. Shah, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND.

2:15 PM Q18.3
INJECTION ELECTROLUMINESCENCE FROM THIN FILM p-i-n STRUCTURES MADE FROM NANOCRYSTALLINE HYDROGENATED SILICON, Arkadi Andreev, A.F. Ioffe Phys-Technical Inst, Dept of Amorphous Semiconductors , St. Petersburg, RUSSIA; Martin Albrecht, Saule Aldabergenova, Univ Erlangen-Nurnberg, Dept Mikrocharakterisierung, Erlangen, GERMANY; Boris Averboukh, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Ravshan Mavlyanov, A.F. Ioffe Phys-Technical Inst, Dept of Amorphous Semiconductors, St Petersburg, RUSSIA; Horst P. Strunk, Univ Erlangen-Nurnberg, Inst Materials Science, Erlangen, GERMANY; Dirk Stenkamp, Univ Erlangen-Nurnberg, Dept Mikrocharakterisierung, Erlangen, GERMANY.

2:30 PM Q18.4
INFLUENCE OF HYDROGEN INCORPORATION INTO SILICON ON THE ROOM-TEMPERATURE PHOTOLUMINESCENCE, J. Rappich, Hahn-Meitner-Inst, Ateilung Photovoltaik, Berlin, GERMANY; Thomas Dittrich, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Y. Timoshenko, Lomonosov Univ, Faculty of Physics, Moscow, RUSSIA; W. Fuhs, Hahn-Meitner-Inst, Abteilung Photovoltaik, Berlin, GERMANY.

2:45 PM Q18.5
FREE CARRIER ABSORPTION IN DOPED MICROCRYSTALLINE SILICON FILMS, Moritz Heintze, Markus Schubert, Claus-Dieter Abel, Univ Stuttgart, Inst fur Physikalische Elektronik, Stuttgart, GERMANY; Erwin Lotter, Univ Stuttgart, Zentrum Solarenergie und Wasserstofforschung, Stuttgart, GERMANY.

3:00 PM BREAK

SESSION Q19: PREPARATION, PROPERTIES, AND APPLICATIONS OF POLYCRYSTALLINE SILICON FILMS
Chair: Herbert Keppner
Thursday Afternoon, December 5, 1996
Salon G (M)

3:30 PM *Q19.1
FABRICATION OF POLYCRYSTALLINE Si THIN FILM FOR SOLAR CELLS, Makoto Tanaka, Sanyo Electric Co., Ltd., Osaka, JAPAN; S. Tsuge, S. Kiyama, S. Tsuda, S. Nakano, Sanyo Electric Co., Ltd., New Matls Research Ctr, Osaka, JAPAN.

4:00 PM Q19.2
EPITAXY-LIKE GROWTH OF POLYCRYSTALLINE SILICON ON THE SEED CRYSTALLITES GROWN ON GLASS, Y. Miyamoto, J. Miita, Tokyo Inst of Technology, Graduate School, Yokohama, JAPAN; Isamu Shimizu, Tokyo Inst of Technology, Electronic Chemistry , Yokohama, JAPAN.

4:15 PM Q19.3
GROWTH OF HIGH QUALITY POLY-SiGe ON GLASS SUBSTRATES, Kunihiro Shiota, Daisuke Inoue, Koichirou Minami, Masaji Yamamoto, Jun-ichi Hanna, Tokyo Inst of Technology, Imaging Science & Engr Lab, Yokohama, JAPAN.

4:30 PM Q19.4
TEMPERATURE DEPENDENT LINE-SHAPE OF THE SILICON DANGLING BOND EPR-RESONANCE IN POLYCRYSTALLINE SILICON, N. H. Nickel, Hahn-Meitner-Inst, Abteilung Photovoltaik, Berlin, GERMANY; Eric A. Schiff, Syracuse Univ, Dept of Physics, Syracuse, NY.

4:45 PM Q19.5
STRUCTURE AND PROPERTIES OF DISLOCATIONS AND GRAIN BOUNDARIES IN SILICON, Matthew F. Chisholm, S. J. Pennycook, Theodore Kaplan, Mark Mostoller, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN.

SESSION Q20: POSTER SESSION: PREPARATION, PROCESSING, AND PROPERTIES OF POROUS SILICON II
Chair: Jean-Claude Vial
Thursday Evening, December 5, 1996
8:00 P.M.
Grand Ballroom/Constitution (S)

Q20.1
NUCLEAR MAGNETIC RESONANCE (NMR) OF POROUS SILICON, Karen K. Gleason, Wai-Kit Chang, Ming-Yang Liao, MIT, Dept of Chemical Engr, Cambridge, MA.

Q20.2
IN-SITU PHOTOLUMINESCENCE INVESTIGATION OF THE INITIAL POROUS SILICON FORMATION IN 0.2 M NH4F (pH 3.2), Thomas Dittrich, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Victor Yu. Timoshenko, Moscow State Univ, Faculty of Physics, Moscow, RUSSIA; J. Rappich, Hahn-Meitner-Inst, Ateilung Photovoltaik, Berlin, GERMANY.

Q20.3
ROLES OF SURFACE TERMINATION IN PHOTOLUMINESCENCE MECHANISMS OF POROUS Si, Yoshiyuki Suda, Koji Obata, Ayaka Kumagai, Nobuyoshi Koshida, Tokyo Univ of Agric & Tech, Faculty of Technology, Tokyo, JAPAN.

Q20.4
LUMINESCENCE AND SURFACE STATE CHARACTERISTICS IN P-TYPE POROUS SILICON, A. Ramirez Porras, O. Resto, S. Z. Weisz, Univ of Puerto Rico, Dept of Physics, San Juan, PR; Y. Goldstein, A. Many, E. Savir, Hebrew Univ, Racah Inst of Physics, Jerusalem, ISRAEL.

Q20.5
GREEN LIGHT EMISSION OF POROUS SILICON, Jina Namgoong, Samsung Display Devices Co Ltd, Display R&D Center, Kyungki-Do, SOUTH KOREA; Sergei Lazarouk, Belarusian State Univ, Dept Informatics & Radioelectronics, Minsk, BELARUS; Gil Yong Chung, Hyek Bok Rhee, Samsung Display Devices Co Ltd, Display R&D Center, Kyungki-do, SOUTH KOREA; Dong Kyun Seo, Samsung Display Devices Co Ltd, Dispaly R&D Center, Kyungki-Do, SOUTH KOREA.

Q20.6
PHOTO-IRRADIATION-INDUCED NARROWING OF PHOTOLUMINESCENCE SPECTRA FROM POROUS SILICON, Mitsuo Okamoto, Toshimichi Ito, Akimitsu Hatta, Takanobu Nagao, Toshimichi Ito, Osaka Univ, Dept of Electrical Engr, Osaka, JAPAN.

Q20.7
LUMINESCENCE SPECTRAL NARROWING IN POROUS SILICON ANODIZED WITH MONOCHROMATIC LIGHT, Matsumoto Takahiro, ERATO JST, Single Quantum Dot Project, Ibaraki, JAPAN; Yasuaki Masumoto, ERATO JST, Single Quantam Dot Proj, Tsukuba, JAPAN; Mimura Hidenori, Tohoku Univ, Research Inst Electrical Communication, Sendai, JAPAN.

Q20.8
OPTICALLY-INDUCED ANISOTROPY IN THE POROUS Si PHOTOLUMINESCENCE, Dmitri Kovalev, Boris Averboukh, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Moshe Ben-Chorin, Weizmann Inst of Science, Dept of Chemical Physics, Rehovot, ISRAEL; Frederick Koch, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Alexander L. Efros, Mervine Rosen, Naval Research Laboratory, Nanostructure Optics Section, Washington, DC.

Q20.9
TWO-PHOTON AUGER IONIZATION IN POROUS SILICON, Boris Averboukh, Dmitri Kovalev, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Moshe Ben-Chorin, Weizmann Inst of Science, Dept of Chemical Physics, Rehovot, ISRAEL; Frederick Koch, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Alexander L. Efros, Mervine Rosen, Naval Research Laboratory, Nanostructure Optics Section, Washington, DC.

Q20.10
SHIFT OF CRITICAL POINTS OF THE SILICON BAND STRUCTURE WITH QUANTUM CONFINEMENT, Boris Averboukh, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Moshe Ben-Chorin, Weizmann Inst of Science, Dept of Chemical Physics, Rehovot, ISRAEL; Dmitri Kovalev, G. Polisski, Frederick Koch, Technische Univ Munich, Dept of Physics, Garching, GERMANY.

Q20.11
EVIDENCE FOR LIGHT EMISSION FROM QUANTUM WIRES IN POROUS SILICON, Darlene Schwall, James M. Galligan, Univ of Connecticut, Inst of Materials Science, Storrs, CT; Fred A. Otter, Univ of Connecticut, Dept of Physics, Storrs, CT.

Q20.12
SELECTION RULES IN THE RAMAN SPECTRUM OF POROUS SILICON, Fernando Agullo-Rueda, Univ Autonoma de Madrid, Inst Ciencia Materiales, Madrid, SPAIN; Jose David Moreno, E. Montoya, R. Guerrero-Lemus, R. J. Martin-Palma, J. M. Martinez-Duart, Univ Autonoma de Madrid, Dept de Fisica Aplicada, Madrid, SPAIN.

Q20.13
FORMATION OF BURIED POROUS SILICON STRUCTURE BY HYDROGEN PLASMA IMMERSION ION IMPLANTATION (PIII), Zhineng Fan, City Univ of Hong Kong, Dept of Physical & Matls Science, Kowloon, HONG KONG; Nathan W. Cheung, Univ of California-Berkeley, Dept of EE&CS, Berkeley, CA; Paul K. Chu, City Univ of Hong Kong, Dept of Physical & Matls Science, Hong Kong, HONG KONG; S. Sundar Kumar Iyer, Xiang Lu, Univ of California-Berkeley, Dept of EE&CS, Berkeley, CA.

Q20.14
LIGHT EMITTING POROUS POLYCRYSTALLINE SILICON FILMS, P. G. Han, M. C. Poon, Hong Kong Univ Sci & Tech, Dept of EEE, Hong Kong, HONG KONG.

Q20.15
TEM STUDY OF POROUS SILICON FABRICATED FROM N- AND P-TYPE DOPED POLYCRYSTALLINE FILMS, Haji Lazhar, Yanick Le Thomas, Frederic Chan Che Lai, Pierre Joubert, Univ de Rennes I, Groupe de Microelectronique et Visualisation, Lannion, FRANCE.

Q20.16
TRANSMISSION ELECTRON MICROSCOPY STUDY OF THE CORRELATION BETWEEN MORPHOLOGY AND PHOTOLUMINESCENCE SPECTRA OF POROUS SILICON, Jacob Jorne, Univ of Rochester, Dept of Chemical Engr, Rochester, NY; Ying Kang, International Rectifier, El Segundo, CA.

Q20.17
REFLECTANCE/POROSITY CORRELATIONS IN ANODIZED POROUS SILICON, Rosario A. Gerhardt, Yolande Berta, Antoinette X. Coles, Georgia Inst of Technology, School of MS&E, Atlanta, GA.

Q20.18
POROUS SILICON INTERFACES: AN X-RAY STUDY, Daniel Bellet, Univ J. Fourier Grenoble, Lab de Spectrometrie Physique, Saint Martin D'Heres, FRANCE; Tilo Baumbach, Inst Laue-Langevin, Grenoble, FRANCE; Denis Buttard, Gerard Dolino, Univ J. Fourier Grenoble, Lab de Spectrometrie Physique, Saint Mardin D'Heres, FRANCE.

Q20.19
LONG-TERM STABILITY AND WAVELENGTH DEPENDENCE OF REFRACTIVE INDEX OF POROUS SILICON, Shingo Uehara, Seikei Univ, Faculty of Engineering, Tokyo, JAPAN; Tadashi Matsubara, Katsuhiko Yokoyama, Seikei Univ, Dept of Engineering, Tokyo, JAPAN.

Q20.20
DEPTH GRADIENTS IN POROUS SILICON: HOW TO MEASURE THEM AND HOW TO AVOID THEM, Markus Thoenissen, Michael Berger, KFA Julich GmbH, ISI, Julich, GERMANY; Wolfgang Theiss, Stefan Hilbrich, Rudiger Arens-Fischer, RWTH Aachen, I. Physik Inst, Aachen, GERMANY; Sophie Billat, Michael Kruger, Hans Luth, KFA Julich GmbH, ISI, Julich, GERMANY.

Q20.21
PHOTOELECTROCHEMICAL DISSOLUTION OF N-TYPE SILICON, Jacob Jorne, Univ of Rochester, Dept of Chemical Engr, Rochester, NY; Ying Kang, International Rectifier, El Segundo, CA.

Q20.22
WATER ADHESION ON POROUS SILICON SURFACES, Kirk D. Kolenbrander, MIT, Dept of MS&E, Cambridge, MA; Danielle S. Russell, Univ of California-Berkeley, Dept of MS&E, Berkeley, CA; Jimmie D. Walker, MIT, Cambridge, MA.

Q20.23
ELECTROCHEMICAL AND CHEMICAL DEPOSITION OF II-VI SEMICONDUCTORS IN POROUS SILICON, Roland Herino, Michael Gros-Jean, Laurent Montes, Univ J. Fourier Grenoble, Lab de Spectrometrie Physique, St. Martin d'Heres, FRANCE.

Q20.24
FABRICATION AND CHARACTERIZATION OF POROUS SILICON/POLYMER NANOCOMPOSITES, S. P. Duttagupta, Philippe M. Fauchet, Univ of Rochester, Dept of Electrical Engr, Rochester, NY; X. L. Chen, Samson A. Jenekhe, Univ of Rochester, Dept of Chemical Engr, Rochester, NY.

Q20.25
DEPOSITION OF POLYPYRROLE INTO POROUS SILICON, Jose David Moreno, Univ Autonoma de Madrid, Dept de Fisica Aplicada, Madrid, SPAIN; Fernando Agullo-Rueda, Univ Autonoma de Madrid, Inst Ciencia Materiales, Madrid, SPAIN; R. Guerrero-Lemus, R. J. Martin-Palma, J. M. Martinez-Duart, Univ Autonoma de Madrid, Dept de Fisica Aplicada, Madrid , SPAIN; M. L. Marcos, J. Gonzalez-Velasco, Univ Autonoma de Madrid, Departamento de Quimica, Madrid, SPAIN.

Q20.26
LOCAL STRUCTURE AND OPTICAL PROPERTIES OF METAL-PLATED POROUS SILICON, Takashi Ooiwa, Takanobu Nagao, Akimitsu Hatta, Toshimichi Ito, Osaka Univ, Dept of Electrical Engr, Osaka, JAPAN.

Q20.27
GROWTH OF GERMANIUM ON POROUS SILICON(001), W. Howard Thompson, Univ of Illinois-Urbana, Dept of Physics, Urbana, IL; M. A. Hasan, Univ of North Carolina , Dept of Electrical Engr, Charlotte, NC; Munir H. Nayfeh, Univ of Illinois-Urbana, Dept of Physics, Urbana, IL; Joseph E. Greene, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL; Zain Yamani, Univ of Illinois-Urbana, Dept of Physics, Urbana, IL.

Q20.28
EFFECTS OF NANOCRYSTALLINE STRUCTURE AND PASSIVATION ON THE PHOTOLUMINESCENT PROPERTIES OF POROUS SILICON CARBIDE, J. E. Spanier, Columbia Univ, Dept of Applied Physics, New York , NY; G. Slade Cargill, Columbia Univ, Dept of Chemical Engr, New York, NY; I. P. Herman, Columbia Univ, Dept of Applied Physics, New York, NY; Sangsig Kim, Univ of Illinois-Urbana, Dept of Electrical & Computer Engr, Urbana, IL; D. R. Goldstein, A. D. Kurtz, Kulite Semiconductor Products Inc, Leonia, NJ; B. Z. Weiss, Technion-Israel Inst of Tech, Dept of Materials Engr, Haifa, ISRAEL.

Q20.29
PREPARATION, STRUCTURAL AND OPTICAL PROPERTIES OF FREE-STANDING POROUS GALLIUM PHOSPHIDE, Vladimir A. Karavanskii, Inst of General Physics, Moscow, RUSSIA; Nikolai N. Melnik, Alexander V. Kvit, P.N. Lebedev Physical Inst, Moscow, RUSSIA.

SESSION Q21: POSTER SESSION: OPTICAL AND ELECTRONIC DEVICE APPLICATIONS OF NANOSTRUCTURES
Chair: Philippe M. Fauchet
Thursday Evening, December 5, 1996
8:00 P.M.
Grand Ballroom/Constitution (S)

Q21.1
ELECTROLUMINESCENCE ON THIN SOLID FILMS OF QUANTUM-CONFINED CdS NANOCRYSTALS, Mikhail V. Artemyev, Sergey K. Pozdnyak, Inst of Physico-Chemical Problems, Dept of Chemistry, Minsk, BYELURAS.

Q21.2
VISIBLE LIGHT EMISSION FROM OXIDIZED POROUS AND SINGLE-CRYSTAL SILICON ELECTRODES USING A HIGH-FREQUENCY PULSED POTENTIAL, Will H. Green, Selena Chan, Univ of California-San Diego, Dept of Chemistry & Biochem, La Jolla, CA; Michael J. Sailor, Univ of California-San Diego, Dept of Chemistry , La Jolla, CA.

Q21.3
ELECTROLUMINESCENCE AND CARRIER TRANSPORT IN LED BASED ON SILICON-RICH SILICON OXIDE, Leonid Tsybeskov, Karl Hirschman, S. P. Duttagupta, Philippe M. Fauchet, Univ of Rochester, Dept of Electrical Engr, Rochester, NY.

Q21.4
PREPARATION AND CHARACTERIZATION OF THE ACTIVE LAYER FOR AN LED BASED ON OXIDIZED POROUS SILICON, Larry F. Moore, Univ of Rochester, Dept of Physics, Rochester, NY; Leonid Tsybeskov, Philippe M. Fauchet, Univ of Rochester, Dept of Electrical Engr, Rochester, NY.

Q21.5
EL OF POROUS SILICON BUILT IN BY POLYMER, Sergei Lazarouk, Belarusian State Univ, Dept Informatics & Radioelectronics, Minsk, BELARUS; Hyek Bok Rhee, Jina Namgoong, Samsung Display Devices Co Ltd, Display R&D Center, Kyungki-Do, SOUTH KOREA; Dong Kyun Seo, Samsung Display Devices Co Ltd, Dispaly R&D Center, Kyungki-Do, SOUTH KOREA; Gil Yong Chung, Samsung Display Devices Co Ltd, Display R&D Center, Kyungki-do, SOUTH KOREA.

Q21.6
ADMITTANCE SPECTROSCOPY OF AN Al-POROUS Si BARRIER, Didier Stievenard, CNRS, Dept ISEN UMR 9929, Villencuve, FRANCE; K. Khirouni, Faculte des Sciences, Laboratoire des Semiconductors, Monastir, TUNISIA; D. Deresmes, CNRS, Dept ISEN IEMN , Villeneuve d'Ascq, FRANCE; J. C. Bourgoin, Univ de Paris VI, Groupe de Physique des Solides, Paris, FRANCE.

Q21.7
PHOTOVOLTAIC EFFECT IN POROUS SILICON AND LASER ABLATED POROUS SILICON INVESTIGATED WITH PHOTO-ASSISTED STM, Andrei Pavlov, Electronics & Information Tech Lab, Naantali, FINLAND; Yelena Pavlova, Univ of Turku, Wihuri Physical Lab, Turku, FINLAND.

Q21.8
TRANSIENT PHOTOCURRENT RESPONSE OF DYE-SENSITIZED POROUS NANOCRYSTALLINE TiO ELECTRODES, Albert Goossens, Gerrit K. Boschloo, Delft Univ of Technology, Applied Inorganic Chemistry Lab, Delft, NETHERLANDS.

Q21.9
FABRICATION OF 10-NM GRATINGS USING STM-CHEMICAL VAPOR DEPOSITION, Allan Phillip Archer, James Michael Hetrick, Munir Hassan Nayfeh, Univ of Illinois-Urbana, Dept of Physics, Urbana, IL.

Q21.10
ELECTROLUMINESCENCE FROM THIN FILM SILICON-RICH SILICA, Philip F. Trwoga, Anthony J. Kenyon, Univ College London, Dept of E&EC, London, UNITED KINGDOM; Christopher W. Pitt, Univ College London, Dept of Electronic & Electrical Engr, London, UNITED KINGDOM.

SESSION Q22: POSTER SESSION: NANO/MICROCRYSTALLINE THIN FILMS
Chair: Robert Collins
Thursday Evening, December 5, 1996
8:00 P.M.
Grand Ballroom/Constitution (S)

Q22.1
CORRELATION BETWEEN HYDROGEN CONFIGURATIONS IN AMORPHOUS SILICON AND THE MICROSTRUCTURES OF THE CRYSTALLIZED MATERIAL, Laurent Lusson, Alain Lusson, Antonio Correia, Dominque Ballutaud, CNRS, Lab de Physique des Solides, Meudon, FRANCE.

Q22.2
STRUCTURAL ANALYSIS OF NANOCRYSTALS EMBEDDED IN AMORPHOUS Si FILM, Blas Garrido, J. Macia, Juan Ramon Morante, A. Perez-Rodriguez, Univ de Barcelona, Dept de Fisica Aplicada i Electronica, Barcelona, SPAIN; A. Achid, R. Rizk, P. Ruterana, CNRS, LERMAT-ISMRA, Caen, FRANCE.

Q22.3
MICROSTRUCTURES OF LUMINESCENT nc-Si BY EXCIMER LASER ANNEALING OF a-SiH, Xinfan Huang, Nanjing Univ, Natl Lab of Solid State Microstructures, Nanjing, CHINA; Wei Wu, Nanjing Univ, Dept of Physics, Nanjing, CHINA; H. M. Shen, Nanjing Univ, Solid State Microstructures Lab, Nanjing, CHINA; Wei Li, Linkoping Univ, Dept of Physics & Measurement Tech, Linkoping, SWEDEN; Xiaoyuan Chen, Nanjing Univ, Dept of Physics, Nanjing, CHINA; Jun Xu, Nanjing Univ, Natl Lab of Solid State Microstructures, Nanjing, CHINA; Kunji Chen, Nanjing Univ, Dept of Physics, Nanjing, CHINA.

Q22.4
NANOCRYSTALLINE Ge SYNTHESIS BY PICOSECOND PULSED LASER INDUCED MELTING AND RAPID SOLIDIFICATION, J. Solis, J. Siegel, CSIC, Inst de Optica, Madrid, SPAIN; Carlos Garcia, J. Jimenez, Univ de Valladolid, Dept Fisica de la Mat Condensada, Valladolid, SPAIN.

Q22.5
STRUCTURE AND RADIATIVE PROPERTIES OF NANOCRYSTALLINE HYDROGENATED SILICON, Arkadi Andreev, A.F. Ioffe Phys-Technical Inst, Dept of Amorphous Semiconductors , St. Petersburg, RUSSIA; Martin Albrecht, Saule Aldabergenova, Univ Erlangen-Nurnberg, Dept Mikrocharakterisierung, Erlangen, GERMANY; Boris Averboukh, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Ravshan Mavlyanov, A.F. Ioffe Phys-Technical Inst, Dept of Amorphous Semiconductors, St Petersburg, RUSSIA; Horst P. Strunk, Univ Erlangen-Nurnberg, Inst Materials Science, Erlangen, GERMANY; Dirk Stenkamp, Univ Erlangen-Nurnberg, Dept Mikrocharakterisierung, Erlangen, GERMANY.

Q22.6
DEPOSITION OF PHOTOLUMINESCENT NANOCRYSTALLINE SILICON FILMS BY SiF -SiH -H PLASMAS, Luigi Schiavulli, Univ di Bari, Dept of Physics, Bari, ITALY; Grazia Cicala, Univ di Bari, CNR, Bari, ITALY; Giovanni Bruno, Pio Capezzuto, CNR, Dept of Chemistry, Bari, ITALY; Vito Capozzi, Giuseppe Perna, Univ di Bari, Dept of Physics, Bari, ITALY.

Q22.7
OPTICAL AND ELECTRICAL PROPERTIES OF UNDOPED MICROCRYSTALLINE SILICON DEPOSITED BY THE VHG-GD WITH DIFFERENT DILUTIONS OF SILANE IN HYDROGEN, Natalie Beck, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND; P. Torres, M. Goerlitzer, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND; J. Fric, Inst of Physics, Praha 6, CZECH REPUBLIC; J. Kohler, Univ of Konstanz, Konstanz, GERMANY; N. Wyrsch, A. Shah, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND; M. Vanecek, Inst of Physics, Praha 6, CZECH REPUBLIC.

Q22.8
HALL-EFFECT STUDIES ON MICROCRYSTALLINE SILICON WITH DIFFERENT STRUCTURAL COMPOSITION AND DOPING, Peter Hapke, KFA Julich GmbH, ISI-PV, Julich, GERMANY; Uli Backhausen, Friedhelm Finger, Forschungszentrum Julich, ISI-PV, Julich, GERMANY; Reinhard Carius, KFA Julich GmbH, ISI-PV, Julich, GERMANY; Heribert Wagner, Forschungszentrum Julich, ISI-PV, Julich, GERMANY; Uwe Zastrow, KFA Julich GmbH, ISI-PV, Julich, GERMANY.

Q22.9
PHOTO CARRIER RECOMBINATION IN MICROCRYSTALLINE SILICON STUDIED BY LESR TRANSIENTS, Friedhelm Finger, Joachim Muller, Heribert Wagner, Forschungszentrum Julich, ISI-PV, Julich, GERMANY.

Q22.10
PULSED ESR STUDY OF THE CONDUCTION ELECTRON SPIN CENTER IN c-Si:H , J. H. Zhou, Joint Res Ctr for Atom Technology, Ibaraki, JAPAN; Satoshi Yamasaki, NAIR, Ibaraki, JAPAN; J. Isoya, Univ of Library & Information Science, Tsukuba Ibaraki, JAPAN; Kazuyuki Ikuta, NAIR, Joint Res Ctr for Atom Technology, Ibaraki, JAPAN; M. Kondo, Akihisa Matsuda, Electrotechnical Laboratory, Tsukuba Ibaraki, JAPAN; Kazunobu Tanaka, NAIR, Ibaraki, JAPAN.

Q22.11
ROLE OF in c-Si:H DEPOSITED WITH DIFFERENT PLASMA EXCITATION FREQUENCIES AND SILANE CONCENTRATIONS, Parameswar Hari, P. Craig Taylor, Univ of Utah, Dept of Physics, Salt Lake City, UT; Friedhelm Finger, Forschungszentrum Julich, ISI-PV, Julich, GERMANY.

Q22.12
REAL-TIME MONITORING OF HYDROGEN ABSTRACTION AND ETCHING DURING PULSED-GAS PECVD OF MICRO- AND POLYCRYSTALLINE SILICON, Easwar Srinivasan, Gregory N. Parsons, Jeremy S. Bordeaux, North Carolina State Univ, Dept of Chemical Engr, Raleigh, NC.

Q22.13
GROWTH MECHANISM OF MICROCRYSTALLINE SILICON FILMS DEPOSITED BY ECRCVD, Ingeborg Beckers, Hahn-Meitner-Inst, Abteilung Photovoltaik, Berlin, GERMANY; E. Conrad, S. Muller, Hahn-Meitner-Inst, Abteilung Photovoltaik, Berlin, GERMANY; N. H. Nickel, Hahn-Meitner-Inst, Abteilung Photovoltaik, Berlin, GERMANY; I. Sieber, W. Fuhs, Hahn-Meitner-Inst, Abteilung Photovoltaik, Berlin, GERMANY.

Q22.14
POST-DEPOSITION ANNEALING AND HYDROGENATION OF HOT-WIRE NANOCRYSTALLINE SILICON FILMS, Joao R. Conde, Inst Superior Technico, Dept of Materials Engr, Lisbon, PORTUGAL; P. Borgueira, Inst Superior Technico, Dept of Physics, Lisbon, PORTUGAL; V. Chu, INESC, Lisbon, PORTUGAL.

Q22.15
THIN MICROCRYSTALLINE SILICON BY A MICROWAVE REMOTE PLASMA DEPOSITION SCHEME FOR HETEROJUNCTION SOLAR CELLS AND THIN FILM TRANSISTORS, Basanth Jagannathan, SUNY-Buffalo, Dept of Electrical & Computer Engr, Amherst, NY; Wayne A. Anderson, SUNY-Buffalo, Dept of Electrical and Computer Engr, Amherst, NY.

Q22.16
ENLARGED PARAMETER SPACE BY THE VHF-GD FOR THE DEPOSITION OF THIN ;SPMlt;P;SPMgt; TYPE c-Si:H FILMS, P. Torres, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND; J. Meier, R. Fluckiger, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND; A. Shah, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND.

Q22.17
PROPERTIES OF AMORPHOUS SILICON THIN FILM TRANSISTORS WITH PHOSPHOROUS-DOPED HYDROGENATED MICROCRYSTALLINE SILICON, Joonhoo Choi, Chiwoo Kim, Samsung Electronics Co Ltd, LCD R&D Group II Special Div, Kyungki-Do, SOUTH KOREA; Yang Hongkun, Samsung Electronics Co Ltd, LCD R&D Group II Special Div, Kyungki-Do, KOREA.

Q22.18
INFLUENCE OF NANOCRYSTALLINITY ON PROPERTIES OF PHOTODIODE AND TFT IMAGE SENSOR STRUCTURE, Andrzej Kolodziej, Stanislaw Nowak, Pawel Krewniak, Univ of Mining & Metallurgy, Inst of Electronics, Krakow, POLAND.

Q22.19
NUCLEATION AND GROWTH OF c-Si:H n- AND p-TYPE LAYERS IN a-Si:H p-i-n AND n-i-p SOLAR CELLS: REAL TIME SPECTROELLIPSOMETRY STUDIES , Joohyun Koh, H. Fujiwara, Pennsylvania State Univ, University Park, PA; C. R. Wronski, Pennsylvania State Univ, Dept of Electrical Engr, University Park, PA; Robert Collins, Pennsylvania State Univ, Dept of Physics, University Park, PA.

Q22.20
N-I-P MICROMORPH SOLAR CELLS ON ALUMINUM SUBSTRATES, Michael Goetz, P. Torres, P. Pernet, J. Meier, D. Fischer, Herbert Keppner, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND; A. Shah, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND.

Q22.21
MICROCRYSTALLINE SILICON SOLAR CELLS AT HIGHER DEPOSITION RATES BY THE VHF-GD, P. Torres, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND; J. Meier, Michael Goetz, U. Kroll, Herbert Keppner, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND; A. Shah, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND.

Q22.22
FABRICATION OF P-N HOMOJUNCTION DEVICES OF THE HIGH RESISTIVITY POLYTYPE OF BORON CARBIDE ( , Seong-Don Hwang, Peter A. Dowben, Univ of Nebraska, Dept of Physics, Lincoln, NE; D. N. McIllroy, Univ of Nebraska, Dept of Physics & Astronomy, Lincoln, NE; A. A. Ahmad, N. J. Ianno, Univ of Nebraska, Dept of Electrical Engr, Lincoln, NE.

Q22.23
NANOCRYSTALLINE DIAMOND FILM GROWTH BY MICROWAVE PLASMA-ENHANCED CVD AT LOW TEMPERATURES FROM CO-RICH CO/H MIXTURES, Robert Collins, Pennsylvania State Univ, Dept of Physics, University Park, PA; Joungchel Lee, Byungyou Hong, Pennsylvania State Univ, Materials Research Lab, University Park, PA; R. Messier, Pennsylvania State Univ, Dept of Engr Sci & Mechanics, University Park, PA.

Q22.24
MORPHOTROPIC PHASE BOUNDARY IN THE NANOCRYSTALLINE SYSTEM, Ram Katiyar, Jinfang Meng, Univ of Puerto Rico, Dept of Physics, Rio Piedras, PR.

SESSION Q23: POSTER SESSION: POLYCRYSTALLINE FILMS
Chair: Isamu Shimizu
Thursday Evening, December 5, 1996
8:00 P.M.
Grand Ballroom/Constitution (S)

Q23.1
EXCIMER-LASER CRYSTALLIZATION OF SILICON FILMS: NUMERICAL SIMULATION OF LATERAL SOLIDIFICATION, Vikas V. Gupta, H. Jin Song, James S. Im, Columbia Univ, Dept of CE&MS, New York, NY.

Q23.2
EXCIMER-LASER-INDUCED CRYSTALLIZATION OF THIN Si FILMS: IN SITU ANALYSIS OF MELTING AND SOLIDIFICATION, Jung H. Yoon, Kieun Kim, J. P. Leonard, James S. Im, Columbia Univ, Dept of CE&MS, New York, NY.

Q23.3
THE EFFECT OF FILM THICKNESS AND LASER-PULSE DURATION VARIATION IN EXCIMER-LASER-INDUCED CRYSTALLIZATION OF THIN Si FILMS, J. P. Leonard, M. A. Bessette, Vikas V. Gupta, James S. Im, Columbia Univ, Dept of CE&MS, New York, NY.

Q23.4
CRYSTALLIZATION OF SiGe AND SiGeC FILMS BY EXCIMER LASER ANNEALING: CHARACTERIZATION OF THE MICROSTRUCTURE OF THE FILMS, Pierre Boher, Marc Stehle, SOPRA, Bois Colombes, FRANCE; Eric Fogarassy, Laboratoire PHASE-CNRS, Strasbourg, FRANCE.

Q23.5
POLYCRYSTALLINE SILICON GROWN ON POROUS SILICON-ON-INSULATOR SUBSTRATES, Klaus Hsu, C. H. Lee, C. C. Yeh, National Tsing Hua Univ, Dept of Electical Engr, Hsinchu, TAIWAN.

Q23.6
MICROSTRUCTURE OF THIN FILM PHOTOCONDUCTORS AND ITS CORRELATION WITH OPTICAL AND ELECTRONIC PROPERTIES , Uta Klement, Max-Planck-Inst, Metallforschung, Stuttgart, GERMANY; Dietmar Horst, Univ Stuttgart, Inst Netzwerk-und Systemtheorie, Stuttgart, GERMANY; Frank Ernst, Max-Planck-Inst, Metallforschung, Stuttgart, Germany.

Q23.7
CHARACTERIZATION AND METROLOGY OF THE LOW PRESSURE CHEMICAL VAPOR DEPOSITED (LPCVD) POLYSILICON, Leo Asinovsky, Fei Shen, Rudolph Technologies Inc, Flanders, NJ; Michael Schroth, Stephen Fox, John Sweeney, Bruce Technologies Internatl, North Bellerica, MA.

SESSION Q24: GROUP IV CLUSTERS AND NUCLEATION/GROWTH PHENOMENA
Chair: Robert Collins
Friday Morning, December 6, 1996
Salon G (M)

8:30 AM *Q24.1
ELECTRONIC STATES OF NANOCRYSTALLINE CARBON, G. P. Lopinski, National Research Council, Steacie Inst ofor Molecular Sciencec, Ottawa, CANADA; V. I. Merkulov, J. S. Lannin, Pennsylvania State Univ, Dept of Physics, University Park, PA.

9:00 AM *Q24.2
NUCLEATION AND GROWTH OF Ge NANOCRYSTAL ISLANDS ON Si SURFACES, R. Stanley Williams, Ted Kamins, Gilberto Ribeiro-Medeiros, Elizabeth C. Carr, Douglass A. A. Ohberg, Hewlett Packard Co, Palo Alto, CA.

9:30 AM Q24.3
RAMAN SPECTROSCOPY OF Ge NANOCRYSTALS GROWN BY SELF-ORGANIZATION PROCESSES, Angiolino A. Stella, Univ di Pavia, Dept di Fisica "A Volta", Pavia, ITALY; P. Tognini, Univ di Pavia, Dept di Fisica "A. Volta", Pavia, ITALY; P. Milani, Univ di Milano, Dept di Fisica, Milano, ITALY; C. E. Bottani, Politecnico di Milano, Dept di Ingegneria Nucleare, Milano, ITALY; R. Kofman, P. Cheyssac, Univ de Nice-Sophia Antipolis, Lab de Physique de la Matiere Condensee, Nice 2, FRANCE.

9:45 AM Q24.4
SELF-ASSEMBLING FORMATION OF SILICON QUANTUM DOTS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION, K. Nakagawa, M. Fukuda, Seiichi Miyazaki, M. Hirose, Hiroshima Univ, Dept of Electrical Engr, Hiroshima, JAPAN.

10:00 AM Q24.5
THE CHARACTERISTICS AND OXIDATION OF VAPOR-LIQUID-SOLID GROWN Si NANOWIRES, Jonathan J. Westwater, Dharam P. Gosain, Sony Research Ctr, Si Technology Research Team, Kanagawa, JAPAN; Shigetaka Tomiya, Sony Research Ctr, Ctr for Materials Analysis, Kanagawa, JAPAN; Harry E. Ruda, Univ of Toronto, Metallurgy & Materials Science, Toronto, CANADA; Yoshiyuki Hirano, Sony Research Ctr, Ctr for Materials Analysis, Kanagawa, JAPAN; Setsuo Usui, Sony Research Ctr, Si Technology Research Team, Kanagawa, JAPAN.

10:15 AM BREAK

SESSION Q25: ELECTROLUMINESCENCE AND OPTICAL APPLICATIONS OF SILICON NANOSTRUCTURES
Chair: Philippe M. Fauchet
Friday Morning, December 6, 1996
Salon G (M)

10:45 AM Q25.1
ELECTROLUMINESCENT DEVICES MADE FROM SILICON NANOCRYSTALS EMBEDDED IN VARIOUS HOST MATRICES, Gilardo R. Delgado, Univ of California-Davis, Dept of Applied Science, Livermore, CA; Howard W.H. Lee, Lawrence Livermore National Laboratory, Photonics Group, Livermore , CA; Khashayar Pakbaz, Lawrence Livermore National Laboratory, Dept of Physics & Space Technology, Livermore, CA.

11:00 AM Q25.2
ELECTROLUMINESCENCE DEVICE PERSPECTIVES OF Si-IMPLANTED SiO , F. Kozlowski, H. E. Porteanu, Vesselinka Petrova-Koch, Frederick Koch, Technische Univ Munich, Dept of Physics, Garching, GERMANY.

11:15 AM Q25.3
VISIBLE LIGHT EMITTING DIODE EMPLOYING ELECTROCHEMICALLY ANODIZED NANOCRYSTALLINE SILICON THIN FILM, Toshihiko Toyama, Hiroaki Okamoto, Tetsuyuki Matsui, Teruaki Yamamoto, Osaka Univ, Dept of Electrical Engr, Osaka, JAPAN.

11:30 AM Q25.4
ELABORATION AND LIGHT EMISSION PROPERTIES OF LOW DOPED P-TYPE POROUS SILICON MICROCAVITIES, Gilles Lerondel, P. Ferrand, R. Romestain, Laboratoire Spectrometrie Physique, Saint Matin d'Heres, FRANCE.

11:45 AM Q25.5
ENHANCEMENT OF THE SPONTANEOUS EMISSION RATES IN ALL POROUS SILICON OPTICAL MICROCAVITIES, Olmes Bisi, Lorenzo Pavesi, Univ di Trento, Dept of Physics, Trento, ITALY; Alessandro Tredicucci, Scuola Noramale Superiore, Pisa, ITALY; Massimo Cazzanelli, Univ di Trento, Dept of Physics, Trento, ITALY.

12:00 PM Q25.6
CONVINCING CRITICS: IMPROVED INTERFERENCE FILTER STRUCTURES MADE OF POROUS SILICON, Markus Thoenissen, Michael Berger, KFA Julich GmbH, ISI, Julich, GERMANY; Wolfgang Theiss, Stefan Hilbrich, RWTH Aachen, I. Physik Inst, Aachen, GERMANY; Michael Kruger, KFA Julich GmbH, ISI, Julich, GERMANY; Rudiger Arens-Fischer, RWTH Aachen, I. Physik Inst, Aachen, GERMANY; Sophie Billat, Hans Luth, KFA Julich GmbH, ISI, Julich, GERMANY.