Chairs
Thomas Kennedy, Naval Research Laboratory
Jurgen Michel, MIT
Klaus Thonke, Univ Ulm
Kazumi Wada, NTT System Electronics Laboratories
Symposium Support
- Bruker Instruments, Inc.
- JEOL USA, Inc.
- Komatsu Electronic Metals Co Ltd
- Nippon Steel Corporation
- Office of Naval Research
- Oxford Instruments
- SEH America, Inc.
- Shin-Etsu Handotai Co Ltd
- Sumitomo Sitix Corporation
- Temic Mikroelectronik
- Wacker Siltronic AG
* Invited paper
SESSION E1: POINT DEFECTS AND INTERACTIONS IN Si
Chair: Jurgen Michel
Monday Afternoon, December 2, 1996
Essex Center (W)
1:30 PM E1.1
MECHANISM OF DEFECT REACTIONS IN SEMICONDUCTORS, Yuzo Shinozuka, Dept of Applied Science, Ube, JAPAN.
1:45 PM E1.2
INTERSTITIAL DEFECT REACTIONS IN SILICON, Song Zhao, MIT, Dept of MS&E, Cambridge, MA; George H. Gilmer, Bell Labs, Lucent Technologies, Dept of Silicon Processing, Murray Hill, NJ; Lionel C. Kimerling, MIT, Dept of MS&E, Cambridge, MA.
2:00 PM E1.3
DETERMINING THE CONCENTRATION OF Si INTERSTITTIALS USING QUANTITATIVE TEM, Sushil Bharatan, V. Krishnamoorthy, Kevin S. Jones, Univ of Florida, Dept of MS&E, Gainesville, FL; Per Kringhoj, Univ of Aarhus, Inst of Physics & Astronomy, Aarhus C, DENMARK.
2:15 PM E1.4
DEFECT-IMPURITY COMPLEX IN Si STUDIED USING POSITRON ANNIHILATIONS WITH INNER-SHELL ELECTRONS, Palakkal Asoka-Kumar, Brookhaven National Laboratory, Dept of Physics, Upton, NY; Kelvin G. Lynn, Brookhaven National Laboratory, Dept of Materials Science, Upton, NY; B. Nielson, S. Szpala, Brookhaven National Laboratory, Upton, NY; Giorgio Ghislotti, Brookhaven National Laboratory, Dept of Applied Science, Upton, NY; Ajit C Krishnan, Michigan Technological Univ, Dept of Physics.
2:30 PM E1.5
ROOM TEMPERATURE ELECTROLUMINESCENCE FROM DISLOCATION-RICH SILICON, Einar Sveinbjonsson, Jorg Weber, Max-Planck-Inst, Festkorperforschung, Stuttgart, GERMANY.
2:45 PM E1.6
ACTIVATION ENERGIES OF INTERSTITIAL OXYGEN DIFFUSION IN SILICON CONTAINING HYDROGEN, W. Wijaranakula, SEH America, Inc., Vancouver, WA.
3:00 PM BREAK
SESSION E2: IMPURITY DIFFUSION AND HYDROGEN IN Si
Chair: Weimin Chen
Monday Afternoon, December 2, 1996
Essex Center (W)
3:30 PM *E2.1
COOPERATIVE CHEMICAL REBONDING IN THE SEGREGATION AND DIFFUSION OF IMPURITIES IN SILICON GRAIN BOUNDARIES, Amitesh Maiti, Matthew F. Chisholm, S. J. Pennycook, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN; Sokrates T Pantelides, Vanderbilt Univ, Dept of Physics & Astronomy, Nashville, TN.
4:00 PM E2.2
FORMATION OF HYDROGEN MOLECULES IN CRYSTALLINE SILICON TREATED WITH ATOMIC HYDROGEN, Kouichi Murakami, Univ of Tsukuba, Inst of Materials Science, Ibaraki, JAPAN; N. Fukata, S. Sasaki, Univ of Tsukuba, Inst of Matls Sci, Ibaraki, JAPAN; K. Ishioka, M. Kitajima, Nat Research Inst for Metals, Ibaraki, JAPAN; S. Fujimura, Fujitsu Ltd, Kanagawa, JAPAN; J. Kikuchi, Fujitsu Ltd, Process Development Div, Kanagawa, JAPAN; H. Haneda, Natl Inst for Research in Inorganic Matls, Ibaraki, JAPAN.
4:15 PM E2.3
VIBRATIONAL SPECTROSCOPY OF GOLD-HYDROGEN COMPLEXES IN SILICON, Michael J Evans, Michael J. Stavola, Lehigh Univ, Dept of Physics, Bethlehem, PA.
4:30 PM E2.4
EFFECTS OF H+ IMPLANTATION ON ELECTRON TRAPS INDUCED BY P+ PRE-IMPLANTATION, Akira Ito, Suzuka College of Technology, Dept of Electronic & Information Engr, Mie, JAPAN; Hiroyuki Iwata, Aichi Inst of Technology, Research Inst for Industrial Technology, Toyota, JAPAN; Yutaka Tokuda, Aichi Inst of Technology, Dept of Electronics, Aichi, JAPAN.
SESSION E3: NEW TECHNIQUES IN DEFECT STUDIES
Chairs: Thomas A. Kennedy and Klaus Thonke
Tuesday Morning, December 3, 1996
Essex Center (W)
9:00 AM *E3.1
OPTICAL NMR OF GALLIUM ARSENIDE: METHODS, RESULTS, AND PROSPECTS, Daniel P. Weitekamp, California Inst of Technology, Pasadena, CA; Paul J. Carson, James G. Kempf, California Inst of Technology, A A Noyes Lab of Chemical Physics, Pasadena, CA; John A. Marohn, Michael A. Miller, California Inst of Technology, Pasadena, CA.
9:30 AM *E3.2
RADIOACTIVE ISOTOPES IN PHOTOLUMINESCENCE EXPERIMENTS: IDENTIFICATION OF DEFECT LEVELS, Robert Magerle, Angela Burchard, Manfred Deicher, Univ Konstanz, Dept of Physics, Konstanz, GERMANY.
10:00 AM BREAK
10:30 AM *E3.3
TRUE ATOMIC RESOLUTION IMAGING WITH NONCONTACT ATOMIC FORCE MICROSCOPY, Yasuhiro Sugawara, Hitoshi Ueyama, Osaka Univ, Dept of Electronic Engr, Osaka, JAPAN; Takayuki Uchihashi, Hiroshima Univ, Dept of Physics, Hiroshima, JAPAN; M. Ohta, Seizo Morita, Osaka Univ, Dept of Electronic Engr, Osaka, JAPAN.
11:00 AM *E3.4
QUANTITATIVE DEPTH PROFILING OF LIGHT IMPURITIES IN SEMICONDUCTORS USING ELASTIC RECOIL DETECTION (ERD), Guenther Dollinger, Technische Univ Munich, Dept of Physics, Garching, GERMANY.
11:30 AM E3.5
LOW-TEMPERATURE INFRARED ABSORPTION MEASUREMENT FOR OXYGEN CONCENTRATION AND PRECIPITATES IN HEAVILY-DOPED SILICON WAFERS, Masaaki Koizuka, Fujitsu Ltd, Process Development Div, Kanagawa, JAPAN; Michiko Inaba, Hiroshi Yamada-Kaneta, Fujitsu Ltd, Kanagawa, JAPAN.
11:45 AM E3.6
A NEW MEASUREMENT METHOD OF MICRO DEFECTS NEAR THE SURFACE OF Si WAFERS; OPTICAL SHALLOW DEFECT ANALYZER (OSDA), Kazuo Takeda, Hidetsugu Ishida, Hitachi Ltd, Central Research Lab, Kokubunji Tokyo, JAPAN; Atsushi Hiraiwa, Hitachi Ltd, Semiconductor & I.C. Div, Tokyo, JAPAN.
SESSION E4: Si/SiGe, DISLOCATION IN GROUP IV SEMICONDUCTORS
Chair: Eugene A. Fitzgerald
Tuesday Afternoon, December 3, 1996
Essex Center (W)
1:30 PM *E4.1
DISLOCATION INTERACTIONS AND THEIR IMPACT ON ELECTRICAL PROPERTIES OF
GeSi-BASED HETEROSTRUCTURES, Steven A. Ringel, Patrick N. Grillot, Ohio State Univ, Dept of Electrical Engr, Columbus, OH.
2:00 PM E4.2
DISLOCATION VELOCITIES IN GeSi BULK ALLOYS, Ichiro Yonenaga, Tohoku Univ, Inst for Materials Research, Sendai, JAPAN.
2:15 PM E4.3
INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS, Srikanth B. Samavedam, MIT, Dept of MS&E, Cambridge, MA; Mark S. Goorsky, Univ of California-Los Angeles, Dept of MS&E, Los Angeles, CA; Eugene A. Fitzgerald, MIT, Dept of MS&E, Cambridge, MA.
2:30 PM E4.4
THE REAL-SPACE AND RECIPROCAL-SPACE STRUCTURE OF THE DISPLACEMENT FIELD OF A
-MISFIT DISLOCATION, Stephen R. Lee, Sandia National Laboratories, Albuquerque, NM; Jerrold A. Floro, Sandia National Laboratories, Org 1112, Albuquerque, NM.
2:45 PM E4.5
FIRST PRINCIPLES STUDY OF DISLOCATIONS IN SILICON: IMPURITY
SEGREGATION., Theodore Kaplan, Mark Mostoller, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN; Feng Liu, Univ of Wisconsin-Madison, Dept of Material Science, Madison, WI; Matthew F. Chisholm, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN; Victor Milman, Molecular Simulations, Cambridge, UNITED KINGDOM.
3:00 PM BREAK
SESSION E5: POINT DEFECTS AND DEFECT INTERACTIONS IN SiGe
Chair: Steven A. Ringel
Tuesday Afternoon, December 3, 1996
Essex Center (W)
3:30 PM *E5.1
DEFECTS IN LOW TEMPERATURE MBE-GROWN Si AND SiGe/Si STRUCTURES, Weimin Chen, Linkoping Univ, Linkoping, SWEDEN; I. A. Buyanova, W. -X. Ni, G. V. Hansson, B. Monomer, Linkoping Univ, Dept of Physics, Linkoping, SWEDEN.
4:15 PM E5.3
THE EFFECT OF ION-IMPLANTATION INDUCED DEFECTS ON STRAIN RELAXATION IN
/Si HETEROSTRUCTURES, Robert G. Elliman, John Glasko, Australian National Univ, Dept of Electronic Matls Engr, Canberra, AUSTRALIA; John Fitz Gerald, Australian National Univ, RSES, Canberra, AUSTRALIA; Per Kringhoj, Univ of Aarhus, Inst of Physics & Astronomy, Aarhus C, DENMARK.
4:30 PM E5.4
TUNING THE KINETICS OF MISFIT STRAIN RELAXATION IN METASTABLE (Si)/SiGe/Si(100) STRUCTURES BY
ION IMPLANTATION, Eric A. Stach, Univ of Virginia, Dept of MS&E, Charlottesville, VA; Robert Hull, Univ of Virginia, MS & E, Charlottesville, VA; A. Nejim, Univ of Surrey,; J. C. Bean, Bell Labs, Lucent Technologies, Murray Hill, NJ; A. Walz-Flannigan, Carleton Univ.
4:45 PM E5.5
DISLOCATION-RELATED PHOTOLUMINESCENCE IN STRAIN-RELAXED SiGe/Si BUFFER LAYER STRUCTURES, Kai Shum, City College of New York, Dept of Electrical Engr, New York, NY; Patricia M. Mooney, IBM T.J. Watson Research Ctr, Yorktown Heights, NY; L. P. Tilly, Ericsson Components AB, Kista-Stockholm, SWEDEN; Jack O. Chu, IBM T.J. Watson Research Ctr, Yorktown Heights, NY.
SESSION E6: POSTER SESSION:
DEFECTS IN Si AND SiGe
Chair: Jurgen Michel
Tuesday Evening, December 3, 1996
8:00 P.M.
America Ballroom (W)
E6.1
FORMATION OF Er-RELATED DONOR CENTERS DURING POSTIMPLANTATION ANNEALING OF Si:Er, Nick A. Sobolev, A.F. Ioffe Phys-Technical Inst, Dept of Solid State Electronics, St Petersburg, RUSSIA; Oleg V. Alexandrov, Elena I. Shek, A.F. Ioffe Phys-Technical Inst, Solid State Electronics, St. Petersburg, RUSSIA.
E6.2
SHALLOW DONOR CENTERS IN ERBIUM-IMPLANTED SILICON SUBJECTED TO HIGH-TEMPERATURE ANNEALING, Vadim V. Emtsev, A.F. Ioffe Phys-Technical Inst, Dept of Solid State Electronics, St Petersburg, RUSSIA; Dmitrii S. Poloskin, A.F. Ioffe Phys-Technical Inst, Solid State Electronics, St. Petersburg, RUSSIA; Nick A. Sobolev, A.F. Ioffe Phys-Technical Inst, Dept of Solid State Electronics, St Petersburg, RUSSIA; Elena I. Shek, A.F. Ioffe Phys-Technical Inst, Solid State Electronics, St. Petersburg, RUSSIA.
E6.3
DEFECTS IN ERBIUM/OXYGEN IMPLANTED SILICON, X. Duan, J. Palm, B. Zhang, Jurgen Michel, Lionel C. Kimerling, MIT, Dept of MS&E, Cambridge, MA.
E6.4
EVALUATION OF PROTON IRRADIATION-INDUCED DEEP LEVELS IN n-SILICON, Kenichiro Kono, Nat Research Inst for Metals, High Resolution Beam Research Station, Ibaraki, JAPAN; Tetsuya Saito, Nat Research Inst for Metals, Ibaraki, JAPAN; Hiroshi Amekura, Naoki Kishimoto, Nat Research Inst for Metals, High Resolution Beam Research Station, Ibaraki, JAPAN.
E6.5
INTERACTION OF IMPURITIES AND DISLOCATIONS IN SILICON WAFERS, Isabelle Perichaud, J. J. Simon, J. F. Gatto, Santo Martinuzzi, Univ Aix-Marseilles III, Dept of Physics, Marseilles, FRANCE.
E6.6
NEW EFFECT OF INTERACTION BETWEEN EXTENDED AND POINT DEFECTS IN Si, Valentine G. Eremenko, Inst Microelectronics Technology, Chernogolovka, RUSSIA; Manuel Avella, Univ de Valladolid, Fisica Materia Condensada, Valladolid, SPAIN; Andrey V. Fedorov, Inst of Microtechnology, Chernogolovka, RUSSIA; Carlos Garcia, Univ de Valladolid, Dept Fisica de la Mat Condensada, Valladolid, SPAIN; Juan Jimenerz, Univ de Valladolid, Fisica Materia Condesdada, Valladolid, SPAIN; Luis F. Sanz, Univ de Valladolid, Fisica Materia Condensada, Valladolid, SPAIN.
E6.8
INTERACTIONS OF STRUCTURAL DEFECTS WITH METALLIC IMPURITIES IN MULTICRYSTALLINE SILICON, Scott A. McHugo, Univ of California-Berkeley, Dept of MS&ME, Berkeley, CA; Eicke R. Weber, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr , Berkeley, CA; Henry Hieslmair, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr, Berkeley, CA; Mark D. Rosenblum, Juris P. Kalejs, ASE Americas Inc, Billerica, MA.
E6.9
COPPER PRECIPITATIN AND MINORITY CARRIER DIFFUSION LENGHTS IN SILICON, Henry Hieslmair, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr, Berkeley, CA; Eicke R. Weber, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr , Berkeley, CA; Scott A McHugo, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr, Berkeley, CA; Thomas Heiser, Laboratoire PHASE-CNRS, Strasbourg 2, FRANCE.
E6.10
EPR STUDY OF DEFECT FORMATION IN H-IMPLANTED AND ANNEALED CZ Si, Branko Pivac, B. Rakvin, Rudjer Boskovic Inst, Dept of Physics, Zagreb, CROATIA; F. Corni, Univ di Modena, Dipartimento di Fisica, Modena, ITALY; R. Tonini, G. Ottaviani, Univ di Modena, Dept di Fisica, Modena, ITALY.
E6.11
ROLE OF DEFECTS AND Si INTERSTITIALS IN DIFFUSION AND GETTERING OF METALS IN SILICON, J. S. Williams, Australian National Univ, Dept of Electronic Matls Engr, Canberra, AUSTRALIA; J. Wong-Leung, Australian National Univ, Res School of Phys Sci & Engrg, Canberry, AUSTRALIA.
E6.12
THERMAL-DONOR FORMATION AND OXYGEN-PRECIPITATE NUCLEATION IN SILICON, Madhavan Ramamoorthy, Vanderbilt Univ, Dept of Physics & Astronomy, Nashville, TN; Sokrates T Pantelides, Vanderbilt Univ, Dept of Physics & Astronomy, Nashville, TN.
E6.13
CUBE-OCTAHEDRAL
CLUSTERS IN SILICON CRYSTAL, Masakuni Okamoto, ERATO JST, Takayanagi Particle Surface Project, Tokyo, JAPAN; Kunio Takayanagi, Kazunobu Hashimoto, ERATO JST, Takayanagi Particle Surface Project, Tokyo, JAPAN.
E6.14
TIGHT BINDING STUDIES OF DEFECT DIFFUSION IN SEMICONDUCTORS, Amanda L. Killen, Cornell Univ, Dept of Physics, Ithaca, NY; Paul B. Rasband, Cornell Univ, Dept of Chemical Engr, Ithaca, NY; Bruce Roberts, Cornell Univ, Dept of Physics, Ithaca, NY; Paulette Clancy, Cornell Univ, Dept of Chemical Engr, Ithaca, NY.
E6.15
GROWTH OF SiGe/Si MULTIPLE QUANTUM WELLS BY ULTRAHIGH VACUUM ELECTRON CYCLOTRON RESONANCE CHEMICAL VAPOR DEPOSITION, Sung-Jae Joo, Euijoon Yoon, Seoul National Univ, School of MS&E, Seoul, KOREA; Ki-Woong Whang, Seoul National Univ, School of Electrical Engr, Seoul, SOUTH KOREA.
E6.16
EFFECT OF STRESSES ON DEFECT NUCLEATION IN HETEROEPITAXIAL
THIN FILMS, Cengiz S. Ozkan, William D. Nix, Stanford Univ, Dept of MS&E, Stanford, CA; Huajian Gao, Stanford Univ, Dept of Mechanical Engr, Stanford, CA.
E6.17
HALL EFFECT MEASUREMENTS ON Si/sub X/Ge/sub 1-X/ BULK ALLOYS, Teimouraz Mchedlidze, Komatsu Electronic Metals Co Ltd, Kanagawa, JAPAN; Ichiro Yonenaga, Tohoku Univ, Inst for Materials Research, Sendai, JAPAN.
E6.18
GROWTH AND CHARACTERIZATION OF
EPITAXIAL FILMS GROWN ON Si(100) BY UHV-CVD , B. A. Ferguson, S. K. Banerjee, Univ of Texas-Austin, Microelectronics Research Ctr, Austin, TX; C. B. Mullins, Univ of Texas-Austin, Dept of Chemical Engr, Austin, TX; S. John, E. J. Quinones, Univ of Texas-Austin, Dept of Electrical Engr, Austin, TX.
E6.21
IRON GROUP IMPURITIES IN
-FeSi
STUDIED BY EPR, Klaus Irmscher, Technische Univ Berlin, Inst fur Festkorperphysik, Berlin, GERMANY; Wolfgang Gehlhoff, Technical Univ Berlin, Inst Festkorperphysik, Berlin, GERMANY; Horst Lange, Hahn-Meitner-Inst, Dept of Photovoltaik, Berlin, GERMANY.
E6.22
ATOMISTIC STUDY OF DISLOCATION STRUCTURES IN Si WITH C SUBSTITUTIONAL
DEFECTS AND IN BETA-SiC, Min Yan, Los Alamos National Laboratory, Theoretical Div, Los Alamos, NM; Terence E. Mitchell, Los Alamos National Laboratory, Center for Materials Science, Los Alamos, NM; Vaclav Vitek, Univ of Pennsylvania, Dept of MS&E, Philadelphia, PA; Joel D. Kress, Shao-Ping Chen, Arthur F. Voter, Los Alamos National Laboratory, Theoretical Div, Los Alamos, NM.
E6.24
HRTEM STUDY OF DISLOCATIONS IN GeSi/Si
HETEROSTRUCTURES GROWN BY VPE, Junwu Liang, Xueyuan Wan, Inst of Semiconductors, Beijing, CHINA.
E6.25
INSPECTION OF RECOMBINATION ACTIVE DEFECTS FOR SIGE AND SOLAR CELLS, Oleg V. Astafiev, Victor P. Kalinushkin, General Physics Inst, Moscow, RUSSIA; Nikolai V. Abrosimov, Inst of Solid State Physics, Chernogolovka, RUSSIA.
E6.26
EFFECT OF PRESSURE ON BORON DIFFUSION IN SILICON, Yuechao Zhao, Harvard Univ, Applied Science Div, Cambridge, MA; Michael J. Aziz, Harvard Univ, Engr & Applied Science Div, Cambridge, MA; Salman Mitha, Charles Evans & Associates, Redwood City, CA; David J. Eaglesham, Bell Labs, Lucent Technologies, Murray Hill, NJ; David Schiferl, Los Alamos National Laboratory, Los Alamos, NM.
E6.27
ACTIVATION VOLUME FOR ARSENIC DIFFUSION IN GERMANIUM, Michael J. Aziz, Harvard Univ, Engr & Applied Science Div, Cambridge, MA; David Schiferl, Los Alamos National Laboratory, Los Alamos, NM; Salman Mitha, Charles Evans & Associates, Redwood City, CA; David B. Poker, Oak Ridge National Laboratory, Oak Ridge, TN.
SESSION E7: PLASMA-INDUCED POINT DEFECTS
Chair: Kazumi Wada
Wednesday Morning, December 4, 1996
Essex Center (W)
8:30 AM *E7.1
ELECTRONIC PROPERTIES OF DEFECTS FORMED IN GaAs DURING PLASMA-RELATED PROCESSING, F. Dunie Auret, S. A. Goodman, P.N.K. Deenapanray, G. Myburg, W. F. Meyer, Univ of Pretoria, Dept of Physics, Pretoria , SOUTH AFRICA.
9:00 AM E7.2
FIELD DRIFT OF PLASMA-INDUCED DEFECTS IN PHOSPHORUS DOPED Si BY REVERSE BIAS ANNEALING(RBA), Jo Takeuchi, Keio Univ, Dept of Electical Engr, Yokohama, JAPAN; Satoru Matsumoto, Yoshitaka Zaitsu, Keio Univ, Dept of Electrical Engr, Yokohama, JAPAN; Kazumi Wada, NTT System Electronics Laboratories, Atsugi, JAPAN; Takashi Shimizu, Keio Univ, Dept of Electrical Engr, Yokohama, JAPAN.
9:15 AM E7.3
ELECTRONIC PROPERTIES OF DEFECTS FORMED IN SILICON DURING SPUTTER-ETCHING IN AN ARGON PLASMA, P.N.K. Deenapanray, F. Dunie Auret, C. Schutte, G. Myburg, Univ of Pretoria, Dept of Physics, Pretoria, SOUTH AFRICA; M. C. Ridgway, Australian National Univ, Dept of Electronic Matls Engr, Canberra, AUSTRALIA.
9:30 AM E7.4
DAMAGE INDUCED BY A LOW-BIASED 92-MHz ANODE-COUPLED REACTIVE ION
ETCHER USING CHLORINE-NITROGEN MIXED PLASMAS, Tadashi Saitoh, Hiroshi Kanbe, Tetsuomi Sogawa, Hideki Gotoh, NTT Basic Research Labs, Physical Science Research Lab, Kanagawa, JAPAN.
9:45 AM E7.5
RELATIONSHIP BETWEEN HYDROGEN-RELATED METASTABLE DEFECTS AND EL2-LEVEL IN GaAS CRYSTALS, Shinagawa Tatsuyuki, Tokyo Metropolitan Univ, Dept of Electronics & Information Engr, Tokyo, JAPAN; Okumura Tsugunori, Tokyo Metropolitan Univ, Dept of Electronics & Infom Engr, Tokyo, JAPAN.
10:00 AM BREAK
SESSION E8: DEFECTS AND GATE OXIDE INTEGRITY
Chair: George Rozgonyi
Wednesday Morning, December 4, 1996
Essex Center (W)
10:30 AM *E8.1
OCTAHEDRAL VOID DEFECTS CAUSING GATE-OXIDE DEFECTS IN MOSLSIs, M. Itsumi, NTT Integrated Information & System Elctronics Labs, Kanagawa, JAPAN.
11:00 AM E8.2
STRUCTURE OF THE DEFECTS RESPONSIBLE FOR B-MODE BREAKDOWN OF GATE OXIDE GROWN ON THE SURFACE OF SILICON WAFERS
, Tomohiro Mera, Jaroslaw Jablonski, Masayoshi Danbata, Kiyoshi Nagai, Komatsu Electronic Metals Co Ltd, Research & Development Center, Kanagawa, JAPAN.
11:15 AM E8.3
CHARACTERIZATION OF GROWN-IN DEFECTS IN CZ-SI CRYSTALS BY BRIGHT FIELD
IR LASER INTERFEROMETER, Katsuhiko Nakai, Nippon Steel Corporation, Adv Tech Res Lab, Yamaguchi, JAPAN; H. Hasebe, Nippon Steel Corporation, Yamaguchi, JAPAN; T. Iwasaki, T. Tsumori, Nippon Steel Corporation, Electron Div, Yamaguchi, JAPAN.
11:30 AM E8.4
POSITRON BEAM TECHNIQUE FOR THE STUDY OF DEFECTS AT THE SI/SiO
INTERFACE OF A POLYSILICON GATED MOS SYSTEM, M. Clement, Delft Univ of Technology, IRI, Delft, NETHERLANDS; J. M.M. de Nijs, Delft Univ of Technology, Delft, NETHERLANDS; A. van Veen, Delft Univ of Technology, IRI, Delft, NETHERLANDS; H. Schut, Delft Univ of Technology, Interfaculty Reactor Inst, Delft, NETHERLANDS; P. Balk, Delft Univ of Technology, Delft, NETHERLANDS.
11:45 AM E8.5
TEM OBSERVATION OF GROWN-IN DEFECTS IN CZ-Si CRYSTALS AND THEIR SECCO ETCHING PROPERTIES, Masahiro Kato, Hiroshi Takeno, Yutaka Kitagawara, Shin-Etsu Handotai Co Ltd, Gunma, JAPAN.
SESSION E9: POINT DEFECTS AND REACTION
Chair: Hans J. Gossman
Wednesday Afternoon, December 4, 1996
Essex Center (W)
1:30 PM E9.1
AN INVESTIGATION OF VACANCY POPULATION DURING ARSENIC ACTIVATION IN
SILICON, Omer Dokumaci, Mark E. Law, Univ of Florida, Dept of Electrical Engr, Gainesville, FL; Hans J. Gossman, Bell Labs, Lucent Technologies, Murray Hill, NJ.
1:45 PM E9.2
ENHANCED DISSOLUTION OF EXTRINSIC DISLOCATION LOOPS IN SILICON WITH A SILICON NITRIDE FILM, S. Brad Herner, Kevin S. Jones, V. Krishnamoorthy, Univ of Florida, Dept of MS&E, Gainesville, FL; Toshi K. Mogi, Cornell Univ, Ithaca, NY; Michael O. Thompson, Cornell Univ, Dept of MS&E, Ithaca, NY; Hans J. Gossman, Bell Labs, Lucent Technologies, Murray Hill, NJ.
2:00 PM E9.3
DEPTH PROFILE OF POINT DEFECTS IN ION IMPLANTED
AND
JUNCTIONS FORMED BY 450
C POST-IMPLANTATION ANNEALING AND
IMPACT OF DEFECTS ON JUNCTION CHARACTERISTICS, Mauricio Massazumi Oka, Tohoku Univ, Dept of Electronic Engr, Miyagi, JAPAN; Tadahiro Ohmi, Tohoku Univ, Dept of Electrical Engr, Miyagi, JAPAN; Akira Nakada, Yukio Tamai, Kei Kanemoto, Tadashi Shibata, Tohoku Univ, Dept of Electronic Engr, Miyagi, JAPAN.
2:15 PM E9.4
GETTERING OF IRON BY ALUMINUM IN P-TYPE SILICON, Sang H. Ahn, Song Zhao, MIT, Dept of MS&E, Cambridge, MA; Hiroshi Nakashima, Kyushu Univ, Dept of Electrical Engr, Fukuoka, JAPAN; Lynn Chalfoun, Lionel C. Kimerling, MIT, Dept of MS&E, Cambridge, MA.
2:30 PM E9.5
DLTS CHARACTERIZATION OF TITANIUM SILICIDATION INDUCED DEFECTS IN SILICON, Dong-Zhi Chi, S. Ashok, Pennsylvania State Univ, Dept of Engineering Science, University Park, PA; Andre Mieckowski, Pennsylvania State Univ, Dept of Engr Science, University Park, PA.
2:45 PM E9.6
INVESTIGATION OF RADIATION DEGRADATION OF CHARACTERISTICS OF SILICON SOLAR CELLS, Shermakhmat M. Makhkamov, Nigmotillo A. Tursunov, Inst of Nuclear Physics, Tahsikent, UZBEKISTAN; M. Ashurov, Inst of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent, UBEKISTAN.
3:00 PM BREAK
SESSION E10: PANEL SESSION ON DEFECTS ENCOUNTERED IN PRODUCTION
Chair: Lionel C. Kimerling
Wednesday Afternoon, December 4, 1996
Essex Center (W)
SESSION E11: POSTER SESSION:
PROCESS-INDUCED DEFECTS
Chair: Kazumi Wada
Wednesday Evening, December 4, 1996
8:00 P.M.
America Ballroom (W)
E11.1
THREE TYPES OF GROWN-IN DEFECTS IN CZ Si CRYSTALS, Kashima Kazuhiko, Shimoi Norihiro, Toshiba Ceramics Co Ltd, Silicon Div, Kanagawa, JAPAN; Izunome Koji, Toshiba Ceramics Co Ltd, R&D Ctr, Kanagawa, JAPAN; Xin Ping, Takeda Ryuji, Toshiba Ceramics Co Ltd, Research & Development Center, Hadano, JAPAN.
E11.2
CRYSTALLOGRAPHIC ANALYSIS OF FLOW PATTERN DEFECTS IN DISLOCATED CZOCHRALSKI SILICON CRYSTALS, Ikematsu Yoichi, Nippon Steel Corporation, Adv Tech Research Lab, Kanagawa , JAPAN; Toshio Iwasaki, Hirofumi Harada, NSC Electron Corp, Dept of Manufacturing, Yamaguchi, JAPAN; Koki Tanaka, Masanori Fujinami, Masami Hasebe, Nippon Steel Corporation, Adv Tech Research Lab, Kanagawa, JAPAN.
E11.3
DARK CURRENT SPECTROSCOPY OF METALS IN SILICON, James P. Lavine, Eastman Kodak Co, Rochester, NY; William McColgin, Jeffrey R. Russell, Eastman Kodak Co, MTD, Rochester, NY.
E11.4
INVESTIGATION ON SUBSURFACE DAMAGE IN SILICON WAFTERS, Xin Zhang, Hong Kong Univ Sci & Tech, Dept of Mech Engr, Kowloon, HONG KONG; Tong-Yi Zhang, Hong Kong Univ Sci & Tech, Dept of ME, Kowloon, HONG KONG; Yitshak Zohar, Hong Kong Univ Sci & Tech, Dept of Mech Engr, Kowloon, HONG KONG; Sanboh Lee, National Tsing Hua Univ, Dept of MS&E, Taipei, TAIWAN.
E11.5
INFLUENCE OF Si SUBSTRATE CRYSTALLINITY ON DEVICE PERFORMANCE, Toshiyuki Iwamoto, Tohoku Univ, Dept of EE, Sendai, JAPAN; Tadahiro Ohmi, Jun Takano, Koji Makihara, Tohoku Univ, Dept of Electrical Engr, Miyagi, JAPAN.
E11.6
POINT DEFECT AGGREGATION IN CZOCHRALSKI SILICON UNDER THERMOELASTIC STRESSES, W. Wijaranakula, SEH America, Inc., Vancouver, WA; Mehmet Sarikaya, Univ of Washington, Dept of MS&E, Seattle, WA.
E11.7
COMPARISON OF GETTERING ABILITY BETWEEN 1/1 DEFECTS AND Si SUBSTRATE, Mitsuhiro Horikawa, Tomohisa Kitano, NEC Corporation, ULSI Device Development Lab, Kanagawa, JAPAN.
E11.8
EFFECT OF GETTERING ON DEVICE CHARACTERISTICS, Mitsuhiro Horikawa, Akihiro Yaoita, Tsuyoshi Nagata, NEC Corporation, ULSI Device Development Lab, Kanagawa, JAPAN; Tomohisa Kitano, NEC Corporation, ULSI Development Lab, Kanagawa, JAPAN.
E11.9
SHALLOW DONOR FORMATION IN HYDROGEN-IMPLANTED SILICON, Hiroyuki Iwata, Aichi Inst of Technology, Research Inst for Industrial Technology, Toyota, JAPAN; Ito Akira, Suzuka College of Technology, Dept of Electronics & Information Engr, Suzuka, JAPAN; Tokuda Yutaka, Aichi Inst of Technology, Dept of Electronics Engineering, Toyota, JAPAN.
E11.10
IMPACT OF CHEMICAL AND EPITAXIAL TREATMENT ON SURFACE DEFECTS ON SILICON WAFERS, Ruediger Schmolke, Dieter Graef, Monique Suhren, Ralf Kirchner, Hubert Piontek, Peter Wagner, Wacker Siltronic AG, Burghausen, GERMANY.
E11.11
OXYGEN PRECIPITATION IN P-IMPLANTED SiO
-Si STRUCTURES DURING ANNEALING PROCESSES, Rodica Plugaru, Inst of Microtechnology, Physics & Technology of Thin Films, Bucharest, ROMANIA.
E11.12
ANNEALING OF DEFECTS IN a-SiC:H, Peter Mascher, McMaster Univ, Dept of Engineering Physics, Hamilton, CANADA; Thomas Friessnegg, Technische Univ Graz, Dept of Nuclear, Graz, AUSTRIA; Marcel Boudreau, McMaster Univ, Dept of Engr Physics, Hamilton, CANADA; Peter Simpson, Univ of Western Ontario, Dept of Physics, London, CANADA; Werner Puff, Technische Univ Graz, Inst fur Kernphysik, Graz, AUSTRIA.
E11.13
BEHAVIOR OF POINT DEFECTS IN CZ SILICON CRYSTAL GROWTH, K. Tanahashi, Osaka Prefecture Univ, College Integ Art & Science, Osaka, JAPAN; N. Inoue, Osaka Prefecture Univ, Research Inst Advanced Science Tech, Osaka, JAPAN; Y. Mizokawa, Osaka Prefecture Univ, College of Art & Science, Osaka, JAPAN.
E11.14
EFFECTS OF OXYGEN IN LOW TEMPERATURE UHV-E BEAM DEPOSITED Ge FILMS ON GaAs, Madan Dubey, U.S. Army Research Laboratory, Physical Science Dir AMSRL-PS.DB, Fort Monmouth, NJ; R. Lareau, U.S. Army Research Laboratory, Physical Science Dir, Fort Momouth, NJ; Ken Jones, U.S. Army Research Laboratory, Fort Monmouth, NJ; Lawrence C. West, Charles W. Roberts, Emil C. Piscani, Integrated Photonic Systems Inc, Clarksburg, NJ.
E11.15
CHARACTERISATION OF DRY ETCHED UNDOPED AND DOPED GaAs, Martin Murtagh, P.A. F. Herbert, NMRC, Cork, IRELAND; Edna McGlynn, NMRC, Lee Matings, Cork, IRELAND; Gabriel M. Crean, NMRC, Cork, IRELAND; F. Dunie Auret, S. A. Goodman, P.N.K. Deenapanray, G. Myburg, Univ of Pretoria, Dept of Physics, Pretoria , SOUTH AFRICA.
E11.16
DONOR REACTIVATION IN PLASMA-IRRADIATED GaAs UNDER LASER ILLUMINATION, Kazumi Wada, Hideo Nakanishi, NTT System Electronics Laboratories, Atsugi, JAPAN.
SESSION E12: WIDE-BANDGAP: DIAMOND
Chair: Klaus Thonke
Thursday Morning, December 5, 1996
Essex Center (W)
8:30 AM E12.1
VIBRATIONALLY-ASSISTED MICRODIFFUSION OF DEFECTS IN SEMICONDUCTORS AND AT INTERFACES, Mark T. Graham, James T. McKinley, Vanderbilt Univ, Dept of Physics & Astronomy, Nashville, TN.
8:45 AM E12.2
BEHAVIOR OF THE POTENTIAL N-TYPE DOPANTS P AND AS IN DIAMOND AFTER LOW DOSE IMPLANTATION, Hans C. Hofsass, Michael Dalmer, Markus Restle, Carsten Ronning, Univ Konstanz, Fakultat fur Physik, Konstanz, GERMANY.
9:00 AM E12.3
LASER INDUCED LUMINESCENCE SPECTROSCOPY OF Xe IMPLANTED NATURAL DIAMONDS, Alexey V. Turukhin, City College of New York, Dept of Physics,; Aushel A. Gorokhovsky, R. R. Alfano, City College of New York, Dept of Physics, New York, NY; A. M. Zaitsev, Univ Hagen, Hagen, GERMANY.
9:15 AM E12.4
PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF THE TUNGSTEN COLOR CENTER IN CVD DIAMOND FILMS, Richard J. Anderson, Dean C. Dibble, Sandia National Laboratories, Livermore, CA.
9:30 AM E12.5
NITROGEN AND RELATED DEFECTS IN POLYCRYSTALLINE DIAMOND, Karen M. McNamara Rutledge, Worcester Polytechnic Inst, Dept of Chemical Engr, Worcester, MA; George D. Watkins, X. Zhou, Lehigh Univ, Dept of Physics, Bethlehem, PA.
9:45 AM E12.6
CORRELATION BETWEEN DEFECTS AND ELECTRICAL CONDUCTION IN SURFACE CONDUCTIVE LAYER OF CVD-DIAMOND FILMS, Yoshiyuki Show, Tokai Univ, Dept of Electronics, Kanagawa, JAPAN; F. Matsuoka, S. Ri, Y. Akiba, T. Kurosu, M. Iida, Tokai Univ, Fac of Engineering, Kanagawa, JAPAN; Tomio Izumi, Tokai Univ, Dept of Electronics, Kanagawa, JAPAN.
10:00 AM BREAK
SESSION E13: WIDE-BANDGAP: II-VI COMPOUNDS
Chair: Nancy Giles
Thursday Morning, December 5, 1996
Essex Center (W)
10:30 AM E13.1
PHOTOLUMINESCENCE AND ELECTRON PARAMAGNETIC RESONANCE STUDIES OF NITROGEN-DOPED ZnSe EPILAYERS, Monica Moldovan, Nancy Giles, Larry E. Halliburton, Scott D. Setzler, Thomas H. Myers, West Virginia Univ, Dept of Physics, Morgantown, WV; Zhonghai Yu, North Carolina State Univ, Dept of Physics, Raleigh, NC.
10:45 AM E13.2
DEFECT STATES IN p-ZnSe:N GROWN BY MOVPE, Shizuo Fujita, Shigeo Fujita, Daisuke Kawaguchi, Ken-ichi Ogata, Kyoto University, Dept of Electronic Science & Engr, Kyoto, JAPAN.
11:00 AM E13.3
IDENTIFICATION OF THE NATIVE VACANCY DEFECTS IN ZnS
Se
BY POSITRON ANNIHILATION, Kimmo T. Saarinen, T. Laine, K. Skog, J. Makinen, P. Hautojarvi, Helsinki Univ of Technology, Physics Lab, Espoo, FINLAND; K. Rakennus, P. Uusimaa, A. Salokatve, M. Pessa, Tampere Univ of Technology, Dept of Physics, Tampere, FINLAND.
11:15 AM E13.4
THEORETICAL STUDY OF DEFECT AND IMPURITY EFFECTS ON THE STRUCTURAL
AND ELECTRONIC PROPERTIES OF ZNSE., Scott Little, Bernard R. Cooper, West Virginia Univ, Dept of Physics, Morgantown, WV.
11:30 AM E13.5
NITROGEN RELATED ACCEPTORS IN p-TYPE MBE ZnSe, Haflidi P. Gislason, Bao Hua Yang, Univ of Iceland, Reykjavik, ICELAND; Djelloul Seghier, Univ of Iceland, Science Inst, Reykjavik, ICELAND; Leslie A. Kolodziejski, MIT, Dept of Electrical Engr, Cambridge, MA.
SESSION E14: WIDE-BANDGAP: SiC
Chair: Jaime A. Freitas
Thursday Afternoon, December 5, 1996
Essex Center (W)
1:30 PM E14.1
THE MICROSCOPIC STRUCTURE OF SHALLOW DONORS IN SILICON CARBIDE, Johann-Martin Spaeth, Siegmund Greulich-Weber, Michael Marz, Univ Paderborn, Dept of Physics, Paderborn, GERMANY; Ekatharina N. Kalabukhova, Sergej Lukin, Inst of Semiconductors, Kiev, ULRAINE.
1:45 PM E14.2
VACANCIES IN ELECTRON IRRADIATED 6H-SiC, Thomas Friessnegg, Technische Univ Graz, Dept of Nuclear, Graz, AUSTRIA; Steen Dannefaer, Univ of Winnipeg, Dept of Physics, Winnipeg, CANADA.
2:00 PM E14.3
DEFECTS IN 4H-SiC CVD EPILAYERS, Ling Zhou, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL; P. Pirouz, Case Western Reserve Univ, Dept of MS&E, Cleveland, OH; J. Anthony Powell, NASA Lewis Research Center, Cleveland, OH.
2:15 PM E14.4
AB-INITIO CALCULATION OF
3d TRANSITION METAL DEFECTS IN CUBIC SiC, Harald Overhof, Univ Paderborn, Dept of Theoretical Physics, Paderborn, GERMANY.
2:30 PM E14.5
ELECTRO-OPTICAL INVESTIGATION OF MICROPIPES IN SILICON CARBIDE, Tangali S. Sudarshan, Helmi Moshen, George Gradinaru, Gheorghe Korony, Univ of South Carolina, Dept of Electrical & Computer Engr, Columbia, SC; William C. Mitchel, Air Force Wright Laboratory, WL/MLPO, Wright Patterson AFB, OH.
2:45 PM BREAK
SESSION E15: POINT DEFECTS IN III-V COMPOUNDS
Chair: George D. Watkins
Thursday Afternoon, December 5, 1996
Essex Center (W)
3:15 PM *E15.1
GROWTH INDUCED ALIGNMENT OF THE FIRST NEIGHBOR SHELL OF CARBON IN
, Michael J. Stavola, Jie-Fei Zheng, Lehigh Univ, Dept of Physics, Bethlehem, PA; Cammy R. Abernathy, Steve J. Pearton, Univ of Florida, Dept of MS&E, Gainesville, FL.
3:45 PM E15.2
RESIDUAL IMPURITIES AND TRANSPORT PROPETIES OF HIGH PURITY MOVPE GaAs, Guido Steude, D. M. Hofmann, M. Drechsler, Bruno K. Meyer, Technische Univ Munich, Dept of Physics, Garching, GERMANY; H. Hartdegen, M. Hollfelder, Inst of Thin Films & Ion Tech, Juelich, GERMANY.
4:00 PM E15.3
AN ANOMALOUS DEEP CENTER
IN SEMI-INSULATING GaAs, Z. Q. Fang, David C. Look, Wright State Univ, Dept of Physics, Dayton, OH.
4:15 PM E15.4
EL2-INDUCED UP-CONVERSION LUMINESCENCE IN GaAs, Volker Alex, Max-Planck-Inst, Festkorperforschung, Stuttgart, GERMANY; Takayuki Iino, Sumitomo Metal Mining Co Ltd, Tokyo, JAPAN; Jorg Weber, Max-Planck-Inst, Festkorperforschung, Stuttgart, GERMANY.
SESSION E16: POSTER SESSION:
WIDE-BANDGAP MATERIALS
Chair: Thomas A. Kennedy
Thursday Evening, December 5, 1996
8:00 P.M.
America Ballroom (W)
E16.1
DIAMOND DOPING BY LITHIUM, Galina Popovici, Univ of Illinois-Urbana, Coordinated Science Lab, Urbana, IL; Mark A. Prelas, Univ of Missouri-Columbia, Dept of Nuclear Engr, Columbia, MO; Victor S. Vavilov, P.N. Lebedev Physical Inst, RAS, Moscow, RUSSIA.
E16.2
CHARGE TRANSIENT SPECTROSCOPY STUDY OF DEEP CENTERS IN CVD DIAMOND AND DIAMOND-LIKE FILMS, V. I. Polyakov, Inst of Radio Engr & Electronics , Dept of Microelectronics, Moscow, RUSSIA; V. P. Varnin, I. G. Teremetskaya, Inst of Physical Chemistry, RAS, Moscow, RUSSIA; B. L. Druz, Veeco Instruments,; A. I. Rukovishnikov, N. M. Rossukanyi, Inst of Radio Engr & Electronics , Moscow, RUSSIA.
E16.3
COEXISTENCE OF DIAMOND AND GRAPHITE PHASES AT GRAIN BOUNDARIES IN DIAMOND , Olga A. Shenderova, Donald W. Brenner, North Carolina State Univ, Dept of MS&E, Raleigh, NC.
E16.4
HYDROGEN-INDUCED LUMINESCENT STATES IN THE SUBSURFACE REGION OF HOMOEPITAXIAL DIAMOND FILMS, Kazushi Hayashi, Electrotechnical Laboratory, Dept of Matls Science, Ibaraki, JAPAN; Takashi Sekiguchi, Tohoku Univ, Inst for Materials Research, Miyagi, JAPAN; Hideyuki Watanabe, Electrotechnical Laboratory, Dept of Materials Science, Ibaraki, JAPAN; Hideyo Okushi, Electrotechnical Laboratory, Dept of Matls Fundamentals, Ibaraki, JAPAN; Sadanori Yamanaka, Electrotechnical Laboratory, Dept of Materials Science, Ibaraki, JAPAN; Koji Kajimura, Electrotechnical Laboratory, Ibaraki, JAPAN.
E16.5
DEEP CENTERS INFLUENCE ON PHOTORESPONSE CHARACTERISTICS IN HIGH-RESISTIVITY ZnSe, Vitalii Korotkov, Univ of Moldova, Dept of Physics, Kishinev, MOLDOVA; Lyudmila Malikova, Brooklyn College, Dept of Physics, Brooklyn, NY; Leonid Bruck, Oleg Gorea, Leonid Kovalev, Alex Simashkevich, Univ of Moldova, Dept of Physics, Kishinev, MOLDOVA.
E16.6
COMPLEX DEFECTS IN Cl DOPED ZnTe AND CdTe, Vello Valdna, Tallinn Technical Univ, Inst of Materials Technology, Tallinn, ESTONIA.
E16.7
THE EFFECTS OF SUBSTITUTIONAL ALKALINE METALS IN ZINC VACANCY OF ZINCSELENIDE SINGLE CRYSTALS GROWN BY THE SUBLIMATION METHOD, Kenji Yoshino, Miyazaki Univ, Dept of Electrical & Electronic Engr, Miyazaki, JAPAN; Fukuyama Atsuhiko, Miyazaki Univ, Dept of Materials Science, Miyazaki, JAPAN; Ikari Tetsuo, Maeda Kouji, Miyazaki Univ, Dept of Electrical & Electronic Engr, Miyazaki, JAPAN; Akashi Yoshito, Miyazaki Univ, Dept of Materials Science, Miyazaki, JAPAN.
E16.8
SURFACE OF Li-DOPED ZnSe GROWN ON MISORIENTATED GaAs(001) SUBSTRATES, Minoru Yoneta, Masakazu Ohishi, Hiroshi Saito, Katuki Fujii, Mituhiro Ohura, Yoshihiko Hiroe, Okayama Univ of Science, Dept of Applied Physics, Okayama, JAPAN.
E16.9
DEEP LEVELS IN NITROGEN DOPED p-TYPE ZnSe GROWN BY MOLECULAR BEAM EPITAXY, M. Zafar Iqbal, Umar S. Qurashi, Quaid-i-Azam Univ, Dept of Physics, Islamabad, PAKISTAN.
E16.11
DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY OF HIGH-TEMPERATURE ALUMINUM IMPLANTED 6H-SiC, Yuri A. Stotski, Igor O. Usov, A.F. Ioffe Phys-Technical Inst, St. Petersburg, RUSSIA; Alexander V. Suvorov, Cree Research Inc, Durham, NC.
E16.12
HIGH-RESOLUTION TEM CHARACTERIZATION OF 6H-15R POLYTYPE BOUNDARIES IN SILICON CARBIDE GROWN BY PHYSICAL VAPOR TRANSPORT, E. Sanchez, Carnegie Mellon Univ, Dept of MS&E, Pittsburgh, PA; M. De Graef, Carnegie Mellon Univ, Dept of Materials Science, Pittsburgh, PA; Weida Qian, Marek Skowronski, Carnegie Mellon Univ, Dept of MS&E, Pittsburgh, PA.
E16.13
X-RAY TOPOGRAPHY OF A SINGLE SUPERSCREW DISLOCATION IN 6H-SiC THROUGH ALL 100} FACES, William M. Vetter, Michael Dudley, SUNY-Stony Brook, Dept of MS&E, Stony Brook, NY.
E16.14
INVESTIGATION OF DEEP ENERGY LEVELS IN II-I COMPOUNDS, A. Castaldini, Anna Cavallini, B. Fraboni, Univ di Bologna, Dept of Physics, Bologna, ITALY; P. Fernandez, Univ Complutense de Madrid, Dept de Fisics de Matls, Madrid, SPAIN; Javier Piqueras, Univ Complutense de Madrid, Fisica de Materials , Madrid, SPAIN; L. Polenta, Univ di Bologna, Dept of Physics, Bologna, ITALY.
E16.15
LASER ABLATION DOPING PROCESS FOR THE SYNTHESIS OF CONDUCTIVE DIAMOND THIN FILM, Naoki Oyanagi, Joseph Gaze, Showa Denko KK, Dept of Inorganic Materials, Chiba, JAPAN; Isamu Yamamoto, Showa Denko KK, Dept of Inorganic Materials , Chiba, JAPAN; Hirosumi Izawa, Showa Denko KK, Dept of Inorganic Materials, Chiba, JAPAN.
SESSION E17: POSTER SESSION:
DEFECTS IN III-V MATERIALS
Thursday Evening, December 5, 1996
8:00 P.M.
America Ballroom (W)
E17.1
DIFFUSION PROCESS OF INTERSTITIAL ATOMS IN InP STUDIED BY TRANSMISSION ELECTRON MICROSCOPY, Yutaka Ohno, Seiji Takeda, Mitsuji Hirata, Osaka Univ, Dept of Physics, Osaka, JAPAN.
E17.2
PROPERTIES OF InP SIMULTANEOUSLY DOPED WITH ZINC AND SULPHUR GROWN BY MOCVD, Christianne Alavanja, Christopher J. Pinzone, AT&T Bell Laboratories, Murray Hill, NJ; Sharon K. Sputz, Michael Geva, Bell Labs, Lucent Technologies, Murray Hill, NJ.
E17.3
CHARACTERIZATION OF HYDROGEN-RELATED DEFECTS IN IRON-DOPED INDIUM PHOSPHIDE, Wallace B. Leigh, Alfred Univ, Electrical Engr Div, Alfred, NY; David F. Bliss, George Bryant, G. Iseler, J. Larkin, USAF Hanscom AFB, Hanscom AFB, MA; J. Wolk, Lawrence Berkeley National Laboratory, Berkeley, CA.
E17.4
EVIDENCE FOR NON-CORRELATION BETWEEN THE 0.15 eV AND 0.44 eV Cu ACCEPTOR LEVELS IN GaAs, Haflidi P. Gislason, Univ of Iceland, Reykjavik, ICELAND; Kristjan Leosson, Univ of Iceland, Science Inst, Reykjavik, ICELAND.
E17.5
RHODIUM IMPURITY IN MOCVD GROWN GaAs, M. Zafar Iqbal, Umar S. Qurashi, Quaid-i-Azam Univ, Dept of Physics, Islamabad, PAKISTAN; Armin S. Dadgar, Deiter Bimberg, Technische Univ Berlin, Inst fur Festkorperphysik, Berlin, GERMANY.
E17.6
DLTS STUDY OF DEEP LEVEL INDUCED BY REVERSE BIAS IN GaAs EPITAXIAL LAYERS, Eugene Salman, Inst of Inorganic Chemistry, RAS Siberian Div, Novosibirsk, RUSSIA; Lydia Borisova, Audrey Korshunov, Inst of Inorganic Chemistry, Siberian Div, Novosibirsk, RUSSIA.
E17.7
S-DOPED GaInAs GROWN BY CHEMICAL BEAM EPITAXY: ELECTRICAL AND STRUCTURAL CHARACTERISATION, Eleni Paloura, Hahn-Meitner-Inst, Berlin, GERMANY; A. Ginoudi, Univ of Thessaloniki, Dept of Physics, Thessaloniki, GREECE; G. Petkos, P. J. Goodhew, Univ of Liverpool, Dept of MS&E, Liverpool, UNITED KINGDOM; B. Theys, J. Chevallier, CNRS, Lab de Physique des Solides de Bellevue, Meudon, FRANCE.
E17.8
NONRADIATIVE INVESTIGATION OF HOLE PHOTOIONIZATION SPECTRUM OF el2 IN SEMI-INSULATING GaAs, Ikari Tetsuo, Kenji Yoshino, Morooka Yukihiro, Miyazaki Univ, Dept of Electrical & Electronic Engr, Miyazaki, JAPAN; Akashi Yoshito, Fukuyama Atsuhiko, Miyazaki Univ, Dept of Materials Science, Miyazaki, JAPAN; Maeda Kouji, Miyazaki Univ, Dept of Electrical & Electronic Engr, Miyazaki, JAPAN.
E17.9
EFFECT OF THE CARBON CONCENTRATION ON THE PHOTOQUENCHING AND ENHANCEMENT OF THE PIEZOELECTRIC PHOTOACOUSTIC SIGNALS OF SEMI-INSULATING GaAs, Fukuyama Atsuhiko, Miyazaki Univ, Dept of Materials Science, Miyazaki, JAPAN; Y. Morooka, Miyazaki Univ, Dept of Electrical & Electronic Engr, Miyazaki, JAPAN; Y. Akashi, Miyazaki Univ, Dept of Materials Science, Miyazaki, JAPAN; Kenji Yoshino, K. Maeda, Tetsuo Ikari, Miyazaki Univ, Dept of Electrical & Electronic Engr, Miyazaki, JAPAN.
E17.10
DEFECT CHARACTERIZATION OF InAs WAFERS USING POSITRON LIFETIME SPECTROSCOPY, Peter Mascher, McMaster Univ, Dept of Engineering Physics, Hamilton, CANADA; Joseph Mahoney, McMaster Univ, Dept of Engineering Physics, Hamilton, CANADA.
E17.11
EFFECT OF Cr DOPING ON THE DEFECT STRUCTURE OF GaSb CRYSTALS, Bianchi Mendez, Univ Complutense de Madrid, Fisica de Materiales, Madrid, SPAIN; Javier Piqueras, Univ Complutense de Madrid, Fisica de Materials , Madrid, SPAIN; Partha S. Dutta, Ernesto Dieguez, Univ Autonoma de Madrid, Fisica de Materiales, Madrid, SPAIN.
E17.12
LOW TEMPERATURE PHOTOLUMINESCENCE PROPERTIES OF IN-SITU Zn DOPED InP LAYERS GROWN BY LP-MOCVD, Youngboo Moon, Euijoon Yoon, Seoul National Univ, School of MS&E, Seoul, KOREA; Sangki Si, Sungjune Kim, Seoul National Univ, School of Electrical Engr, Seoul, SOUTH KOREA.
E17.13
REACTION OF DEEP DEFECTS WITH HYDROGEN, LITHIUM AND COPPER IN n-TYPE GaAs, Bao Hua Yang, Haflidi P. Gislason, Univ of Iceland, Reykjavik, ICELAND.
E17.14
THE DIFFERENCES BETWEEN THE
INTERFACE AND
, Xiaojun Wang, Zhibo Xiao, Lianxi Zheng, Xiongwei Hu, Inst of Semiconductors, Natl Res Ctr for Optoelectronic Tech, Beijing, CHINA; Qiming Wang, Inst of Semiconductors, Beijing, CHINA.
E17.15
INFLUENCE OF THE TEMPERATURE AND THE LIGHT INTENSITY ON THE METASTABLE TRANSFORMATION OF EL2, A. Alvarez, Univ de Valladolid, Dept of Fisica de la Materia Condensada, Valladolid, SPAIN; Juan Jimenez, Univ de Valladolid, Dept of Fisica Materia Condensada, Valladolid, SPAIN; M. A. Gonzalez, Univ de Valladolid, Dept Fisica de la Materia Condensada.
E17.16
LONG-LIVING SHALLOW DONOR EXCITED STATES AND FIR-IR UP-CONVERSION IN GaP:Te, Sergey D. Ganichev, Univ Regensburg, Inst Experimentelle und Angewandte Physik, Regensburg, GERMANY; W. Raab, E. Zepezauer, W. Prettl, Univ Regensburg, Regensberg, 93040; I. N. Yassievich, A.F. Ioffe Phys-Technical Inst, RAS, St Petersburg, RUSSIA.
E17.17
INFLUENCE OF DONOR, ACCEPTOR, AND ISOVALENT IMPURITY DOPING ON ARSENIC EXCESS AND POINT DEFECTS IN LOW TEMPERATURE GROWN GaAs, Vladimir V. Chaldyshev, A. Kunitsyn, A.F. Ioffe Phys-Technical Inst, St.Petersburg, RUSSIA; Nikolai N. Faleev, A.F. Ioffe Phys-Technical Inst, Semiconductor Heterostructures, St. Petersburg, RUSSIA; V. V. Tretoyakov, A.F. Ioffe Phys-Technical Inst, St. Petersburg, RUSSIA; V. V. Preobrazhenskii, B. R. Semyagin, M. A. Putyato, Inst of Semiconductor Physics, Novosibirsk, RUSSIA.
E17.18
NONDESTRUCTIVE CHARACTERIZATION OF THE SURFACE AGING OF
CRYSTAL, Huade Walter Yao, J. C. Erickson, Univ of Nebraska, Dept of Electrical Engr, Lincoln, NE; R. B. James, Sandia National Laboratories, Adv Elec Manufacturing Technologies, Livermore, CA; M. Raj Natarajan, TN Technologies, Round Rock, TX.
E17.19
CHARACTERIZATION OF APBs IN GaP GROWN ON Si, Dov Cohen, C. Barry Carter, Univ of Minnesota, Dept of CE&MS, Minneapolis, MN.
SESSION E18: COMPENSATION AND STRUCTURAL DEFECTS IN III-V COMPOUNDS
Chair: Eicke R. Weber
Friday Morning, December 6, 1996
Essex Center (W)
8:30 AM *E18.1
DIRECT IDENTIFICATION OF THE COMPENSATION MECHANISMS OF Si DONORS IN GaAs, C. Domke, Philipp G. Ebert, M. Heinrich, Forschungszentrum Julich, IFF, Julich, GERMANY; K. Urban, Forschungszentrum Julich, Inst for Festkorperforschung, Julich, GERMANY.
9:00 AM E18.2
OPTICAL NMR FROM SINGLE QUANTUM DOTS, Steven W. Brown, Naval Research Laboratory, Washington, DC; Thomas A. Kennedy, Naval Research Laboratory, Washington, DC; Daniel Gammon, Naval Research Laboratory, Washington, DC.
9:15 AM E18.3
A REFINED MODEL FOR THREADING DISLOCATION FILTERING IN
EPITAXIAL LAYERS, G. MacPherson, P. J. Goodhew, Univ of Liverpool, Dept of MS&E, Liverpool, UNITED KINGDOM.
9:30 AM E18.4
STRUCTURAL AND OPTICAL CHARACTERIZATION OF
GROWN AT LOW TEMPERATURES BY ORGANOMETALLIC VAPOR PHASE EPITAXY, Andreas Wankerl, David T Emerson, Michael J. Cook, Cornell Univ, Dept of Electrical Engr, Ithaca, NY; James R. Shealy, Cornell Univ, Dept of Electrical Engr, Ithaca, NY.
9:45 AM E18.5
ELECTRICAL AND STRUCTURAL PROPERTIES OF LT-GaAs: INFLUENCE OF As/Ga FLUX RATIO AND GROWTH TEMPERATURE, Martina Luysberg, Univ of California-Berkeley, Dept of MS&ME, Berkeley, CA; Eicke R. Weber, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr , Berkeley, CA; H. Sohn, A. Prasad, H. Fujioka, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr,; J. Novak, J. Betko, M. Morvic, Slovak Academy of Science, Inst of Electrical Engrg.
10:00 AM E18.6
HIGH-TEMPERATURE REORIENTATION OF DISTORTIONS IN THE
EXCITED STATE OF THE
COMPLEXES IN n-TYPE GaAs
, Michael A. Reshchikov, Andrei A. Gutkin, Vladimir E. Sedov, A.F. Ioffe Phys-Technical Inst, St. Petersburg, RUSSIA.
10:15 AM BREAK
SESSION E19: DEFECTS IN III-V LAYERS AND STRUCTURES
Chair: Bruno K. Meyer
Friday Morning, December 6, 1996
Essex Center (W)
10:45 AM E19.1
ELECTRICALLY DETECTED MAGNETIC RESONANCE ON GaAs/AlGaAs HETEROSTRUCTURES, T. Wimbauer, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Detlev M. Hofmann, Technische Univ Munich, Physik Dept , Garching, GERMANY; Bruno K. Meyer, M. S. Brandt, T. Brandl, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Nils M. Reinacher, Technische Univ Munich, Walter Schottky Inst, Garching, GERMANY; M. Stutzmann, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Y. Mochizuki, M. Mizuta, NEC Corporation, Fundamental Research Lab, Tsukuba Ibaraki, JAPAN.
11:00 AM E19.2
NATIVE POINT DEFECTS AND IMPURITY-FREE LAYER DISORDERING IN AlGaAs/GaAs, P. Mitev, Yale Univ, Dept of Applied Physics, New Haven, CT; L. Guido, Yale Univ, Dept of Electrical Engr, New Haven, CT.
11:15 AM E19.3
BEHAVIOR OF FLUORINE IN N-AlInAs LAYERS UNDER BIAS-TEMPERATURE STRESSES, Yoshitsugu Yamamoto, N. Hayafuji, K. Sato, M. Otsubo, Mitsubishi Electric Corp, Optoelectronic & Microwave Devices Lab, Hyogo, JAPAN.
11:30 AM E19.4
FIRST-PRINCIPLES CALCULATIONS OF DIFFUSIO OF CHLORINE ATOMS IN GaAs, Takahisa Ohno, Nat Research Inst for Metals, Ibaraki, JAPAN; Akihito Taguchi, NTT Basic Research Labs, Atsugi-shi Kanagawa, JAPAN.