Chairs
Andrew Zangwill, Georgia Institute of Technology
David Jesson, Oak Ridge National Laboratory
David Chambliss, IBM Almaden Research Center
Roy Clarke, University of Michigan
Symposium Support
-
Fisons InstrumentsOak Ridge
- National Laboratory
*Invited Paper
SESSION D1: GROWTH MONITORING
AND CHARACTERIZATION
Chairs: P. Cohen and Leo Schowalter
Monday Morning, November 27
Salon C/D (M)
8:30 A.M. *D1.1
RHEED: AN INFORMATION "RETRIEVER" OR "REGISTER"? Y. Ma, S. Lordi and J.A.
Eades, University of Illinois at Urbana-Champaign, Materials Research
Laboratory, Urbana, IL.
9:00 A.M. *D1.2
THE INITIAL STAGES OF MBE GROWTH OF GaAs SURFACES: THE RELATIONSHIP BETWEEN
RHEED OSCILLATIONS AND SURFACE STEP DENSITY, J.L. Sudijono, Imperial College,
IRC for Semiconductor Materials, London, United Kingdom.
9:30 A.M. D1.3
ORIGIN OF REENTRANT OSCILLATION IN KINETIC THIN FILM DEPOSITION, Rong-Fu Xiao,
Hong Kong University of Science and Technology, Department of Physics, Kowloon,
Hong Kong.
9:45 A.M. D1.4
ANALYSIS OF REFLECTION HIGH ENERGY ELECTRON DIFFRACTION PATTERN IN SILICON
CARBIDE GROWTH ON SILICON, Gerd Teichert and Olaf Nennewitz, Institute für
Festkörperelektronik, Ilmenau, Germany.
10:00 A.M. BREAK
10:30 A.M. D1.5
LOW-TEMPERATURE GROWTH AND STRUCTURAL CHARACTERIZATION OF GaAs USING IONIZED
SOURCE BEAM EPITAXY, D.-W. Roh, Electronics and Telecommunications Research
Institute (ETRI), Research Department, Taejon, Korea; and K. Kim, University of
Illinois, Department of Electrical and Computer Engineering, Urbana, IL.
10:45 A.M. D1.6
REFLECTANCE-ANISOTROPY-SPECTROSCOPY AND SPECTROSCOPIC ELLIPSOMETRY STUDIES
DURING GROWTH OF BINARY AND TERNARY SEMICONDUCTORS IN MOLECULAR BEAM EPITAXY
AND METALORGANIC VAPOR PHASE EPITAXY, J.-T. Zettler, M. Zorn, W. Richter,
Technische Universität Berlin, Institut für Festkörperphysik,
Berlin, Germany; M. Wassermeier, L. Däweritz and K. Ploog,
Paul-Drude-Institut Berlin, Berlin, Germany.
11:00 A.M. D1.7
REAL-TIME ANALYSIS DURING MBE GROWTH USING PARALLEL REFLECTION ELECTRON ENERGY
LOSS SPECTROMETRY, Selmer S. Wong, Channing C. Ahn, Gang He and Harry A.
Atwater, Thomas J. Watson Laboratory of Applied Physics, California Institute
of Technology, Pasadena, CA.
11:15 A.M. D1.8
X-RAY SCATTERING AND ABSORPTION STUDIES OF MnAs THIN FILMS GROWN BY MBE ON
GaAs(001), S. Huang, Z.H. Ming, Y.L. Soo, Y.H. Kao, State University of New
York at Buffalo, Department of Physics, Buffalo, NY; and M. Tanaka, University
of Tokyo, Department of Electronic Engineering, Tokyo, Japan; and H. Munekata,
Tokyo Institute of Technology, Yokohama, Japan.
11:30 A.M. D1.9
IN SITU INVESTIGATION OF THE EVOLUTION OF GROWTH RATE AND SURFACE MORPHOLOGY
DURING Fe CHEMICAL VAPOR DEPOSITION ON Si(001), B.K. Kellerman, E. Chason, D.P.
Adams, T.M. Mayer, Sandia National Laboratories, Albuquerque, NM; and J.M.
White, University of Texas, Austin, Science & Technology Center, Austin,
TX.
11:45 A.M. D1.10
MBE GROWN Fe1-xAl2 ON GaAs(100): SURFACE, STRUCTURAL AND MAGNETIC PROPERTIES,
B.E. Ishaug, A.M. Dabiran, S.M. Seutter, P.I. Cohen, University of Minnesota,
Department of Electrical Engineering, Minneapolis, MN; and R.F.C. Farrow, IBM
Almaden Research Center, San Jose, CA.
SESSION D2: ISLAND SIZE DISTRIBUTIONS AND
KINETIC ROUGHENING
Chair: A. Zangwill
Monday Afternoon, November 27
Salon C/D (M)
1:30 P.M. *D2.1
CROSSOVER SCALING DURING SUBMONOLAYER EPITAXIAL GROWTH, G.S. Bales, Sandia
National Laboratories, Computational Materials Science Department, Livermore,
CA.
2:00 P.M. D2.2
MOLECULAR BEAM EPITAXIAL GROWTH MODE TRANSITIONS ON VICINAL SURFACES, V.I.
Trofimov, B.K. Medvedev, V.G. Mokerov and A.G. Shumyankov, Engineering and
Electronics of Russian Academy of Sciences, Moscow, Russia.
2:15 A.M. D2.3
SOLID-ON-SOLID MONTE CARLO INVESTIGATION OF ISLANDING KINETICS DURING
HETEROEPITAXY, Ken Payne, University of Texas at El Paso, Department of
Computer Science, El Paso, Tx; and Jeff Drucker, University of Texas at El
Paso, Department of Physics and Materials Research Institute, El Paso, TX.
2:30 P.M. D2.4
SCALING OF CLUSTER SIZE DISTRIBUTIONS IN THE GROWTH OF NI ON GAAS(110), P.E.
Quesenberry and P.N. First, Georgia Institute of Technology, School of Physics,
Atlanta, GA.
2:45 P.M. BREAK
3:15 P.M. *D2.5
EFFECTS OF CRYSTAL MICROSTRUCTURE ON EPITAXIAL GROWTH, Fereydoon Family and
Jacques G. Amar, Emory University, Department of Physics, Atlanta, GA.
3:45 P.M. D2.6
ATOMISTIC SIMULATIONS OF METAL THIN FILM GROWTH: METHODS, MECHANISM, AND
MORPHOLOGY, Kristen A. Fichthorn, Steve J. Warakomski and Vijaya K. Pidugu,
Pennsylvania State University, Departments of Chemical Engineering and Physics,
University Park, PA.
4:00 P.M. D2.7
A ONE-DIMENSIONAL STOCHASTIC MODEL OF DIAMOND GROWTH, Michael Frenklach,
Pennsylvania State University, Department of Materials Science and Engineering,
University Park, PA.
4:15 P.M. D2.8
TEMPERATURE DEPENDENCE OF KINETIC ROUGHENING FOR METAL (100) HOMOEPITAXY, Maria
C. Bartelt and J. W. Evans, Iowa State University, Ames, IA.
4:30 P.M. D2.9
EXPERIMENTAL AND THEORETICAL CHARACTERIZATION OF SURFACE MORPHOLOGY, Jacques G.
Amar and Fereydoon Family, Emory University, Department of Physics, Atlanta,
GA.
4:45 P.M. D2.10
KINETIC ROUGHENING: IN SITU X-RAY SCATTERING STUDIES OF Ag HOMOEPITAXY, W.C.
Elliott and P.F. Miceli, University of Missouri-Columbia, Department of
Physics, Columbia, MO; T. Tse and P.W. Stephens, State University of New York
at Stony Brook, Stony Brook, NY.
SESSION D3: POSTER SESSION
THEORY AND GROWTH MONITORING
& CHARACTERIZATION
Chair: D. Chambliss
Monday Evening, November 27
8:00 P.M.
Grand Ballroom (W)
D3.1 EARLY HETEROEPITAXY OF Ag ELECTRODEPOSITED ON TERRACED Au (111) WITH
SURFACE-EMBEDDED-ATOM POTENTIALS, Michael I. Haftel, Mervine Rosen, Naval
Research Laboratory, Code 6651, Washington, DC; and Sean G. Corcoran, Naval
Research Laboratory, Code 6177, Washington, DC.
D3.2 RATE-EQUATION APPROACH TO IRREVERSIBLE ISLAND GROWTH WITH CORRELATIONS,
Jacques G. Amar, Fereydoon Family, Emory University, Department of Physics,
Atlanta, GA; and Barbara Sanborn, National Institute of Standards and
Technology, Gaithersburg, MD.
D3.3 RATE-EQUATION APPROACH TO REVERSIBLE ISLAND GROWTH DURING SUBMONOLAYER
EPITAXY, Barbara A. Sanborn, National Institute of Standards and Technology,
Gaithersburg, MD; and Jacques G. Amar, Emory University, Department of Physics,
Atlanta, GA.
D3.4 QUANTITATIVE CHARACTERIZATION OF RANDOMLY ROUGH GROWING SURFACE OF THIN
FILM, V.I. Trofimov, Institute of Radio Engineering and Electronics of Russian
Academy of Sciences, Moscow, Russia.
D3.5 MORPHOLOGY OF Ag ISLANDS GROWN ON GaAs(110) AT LOW COVERAGE: MONTE
CARLO SIMULATIONS, Ashok Challa, Arizona State University, Center for Solid
State Science, Tempe, AZ; Jeff Drucker, University of Texas at El Paso,
Department of Physics, El Paso, TX; and Timothy S. Cale, Arizona State
University, Center for Solid State Electronics Research, Tempe, AZ.
D3.6 MONTE CARLO SIMULATIONS OF TEMPERATURE PROGRAMMED DESORPTION FROM
GaAs(100), R. Venkataramani and K.F. Jensen, Massachusetts Institute of
Technology, Department of Chemical Engineering, Cambridge, MA.
D3.7 HETEROEPITAXIAL Si1-x-yGexCy LAYER GROWTH ON (100)Si BY CHEMICAL VAPOR
DEPOSITION, Z. Atzmon, A.E. Bair, T.L. Alford, Arizona State University,
Department of Chemical, Bio, and Materials Engineering, Tempe, AZ; D.
Chandrasekhar, D.J. Smith and J.W. Mayer, Arizona State University, Center for
Solid State Science, Tempe, AZ.
D3.8 ORIGIN OF THE CRYSTALLINE TO AMORPHOUS TRANSITION DURING LOW
TEMPERATURE Si(100) HOMOEPITAXY, O.P. Karpenko, University of Michigan,
Department of Materials Science and Engineering, Ann Arbor, MI; D.J. Eaglesham,
AT&T Bell Laboratories, Murray Hill, NJ; and S.M. Yalisove, University of
Michigan, Department of Materials Science and Engineering, Ann Arbor, MI.
D3.9 PROGRESSION OF THE SURFACE ROUGHNESS OF N+ SILICON EPITAXIAL FILMS AS
ANALYZED BY AFM, S. John, E.J. Quinones, University of Texas, Microelectronics
Research Center, Austin, TX; B.A. Fergueson, K.A. Pacheco, C.B. Mullins,
University of Texas, Chemical Engineering Department, Austin, TX; and S.K.
Banerjee, University of Texas, Microelectronics Research Center, Austin, TX.
D3.10 SURFACE MORPHOLOGY AND INTERFACE STRUCTURE OF (CO,FE,NI)/CU/SI BILAYER
THIN FILMS, B.G. Demczyk, Rome Laboratory, RL/ERX, Hanscom AFB, MA; R. Naik, A.
Lukasew, Wayne State University, Department of Physics and Astronomy, Detroit,
MI; and V. Naik, The University of Michigan, Department of Natural Sciences,
Dearborn, MI.
D3.11 A NOVEL IN SITU SAMPLE PREPARATION TECHNIQUE FOR CROSS-SECTIONAL
SCANNING TUNNELING MICROSCOPY, Y.-C. Kim, M.J. Nowakowski and D.N. Seidman,
Northwestern University, Department of Materials Science and Engineering,
Evanston, IL.
D3.12 PRE-GROWTH SUBSTRATE MODIFICATION FOR CONTROL OF THE GROWTH
ORIENTATION OF YBCO ON MgO, B.V. Vuchic, K.L. Merkle, Y. Huang, Argonne
National Laboratory, Materials Science Division, Argonne, IL; K.A. Dean, D.B.
Buchholz, R.P.H. Chang and L.D. Marks, Northwestern University, Materials
Research Center, Evanston, IL.
D3.13 THE QUANTUN SIZE EFFECT AND LAYER-BY-LAYER GROWTH OF METALS, T. Hibma,
D. Schmicker, N. Breeman, University of Groningen, Groningen, Netherlands; K.A.
Edwards, P.B. Howes and J.E. MacDonald, University of Wales, College of
Cardiff, United Kingdom.
D3.14 EPITAXIAL GROWTH OF TITANIUM FILMS ON ALUMINUM SINGLE-CRYSTAL
SURFACES, Richard J. Smith, Adli A. Saleh, V. Shutthanandan, N.R. Shivaparan
and V. Krasemann, Montana State University, Department of Physics, Bozeman,
MT.
D3.15 ANALYSIS OF HREM IMAGING APPLIED TO QUANTUM HETEROSTRUCTURES, G.
Mattei and A.M. Mazzone, CNR, Istituto LAMEL, Bologna, Italy.
D3.16 MOLECULAR BEAM EPITAXY OF InGaP FILMS GROWN ON Si(001) SUBSTRATES WITH
VARIEOUS KIND OF INITIAL BUFFER LAYERS, H. Kawanami and T. Sekigawa,
Electrotechnical Laboratory, Ibaraki, Japan.
D3.17 MORPHOLOGICAL EVOLUTION AND PROPERTIES OF LPE GROWN GaSb, AlGaSb AND
AlGaAsSb, P.S. Dutta, H.L. Bhat, Indian Institute of Science, Department of
Physics, Bangalore, India; Vikram Kumar, Solid State Physics Laboratory, Delhi,
India; and E. Dieguez, Universidad Autonoma, Dpto de Fisica de Materiales,
Madrid, Spain.
D3.18 MICROSTRUCTURAL EVOLUTION OF Co2GaAs THIN FILM ON GaAs SUBSTRATE, Dong
Won Shin, Chan Gyung Park, Pohang University of Science and Technology,
Materials Sciences and Engineering, Pohang, Korea; Jun Seop Kwak and Hong Koo
Baik, Yonsei University, Metallurgical Engineering, Seoul, Korea.
D3.19 MOLECULAR BEAM EPITAXIAL GROWTH OF InAs/AlGaAsSb DEEP QUANTUM WELLS ON
GaAs SUBSTRATES, Naohiro Kuze, Hiromasa Goto, Shinji Miya, Shogo Muramatsu,
Masahiro Matsui and Ichiro Shibasaki, Central Laboratory, Asahi Chemical
Industry Co., Ltd., Shizuoka, Japan.
D3.20 STRUCTURAL DECOMPOSITION AT Sn/GaAs(001) INTERFACE, Sahar A. Nasr and
M. Zinke-Allmang, University of Western Ontario, Department of Physics, London,
Canada.
D3.21 FORMATION OF NANOSCALE TiSi2 EPITAXIAL ISLANDS IMBEDDED IN Si, R.J.
Nemanich, Y.L. Chen, R. Analbers, M. Slotboom, B. Kropman, North Carolina State
University, Department of Physics, Raleigh, NC.
D3.22 APPLICATION OF AR XPS TECHNIQUE FOR DETERMINATION OF GaAs THIN
EPITAXIAL LAYERS MORPHOLOGY, S.P. Kobeleva, A.F. Orlov and V.I. Vdovin, State
Institute for Rare Metals, Moscow, Russia.
D3.23 MOLECULAR BEAM EPITAXIAL GROWTH OF Pt/CaF2/Si(111) STRUCTURE, B.M.
Kim, C.A. Ventrice Jr., S. Schujman, L.J. Schowalter, Rensselaer Polytechnic
Institute, Department of Physics and CIEEM, Troy, NY; and T. Mercer, Drexel
University, Department of Physics, Philadelphia, PA.
D3.24 HIGH QUALITY HETEROEPITAXIAL ß-SiC DEPOSITED FROM ORGANOMETALLIC
PRECURSORS AT 1200deg.C WITHOUT ANY BUFFER LAYER, S. Veprek and Th. Kunstmann,
Technical University Munich, Institute for Chemistry of Information Recording,
Garching, Germany.
D3.25 SEMICONDUCTOR EPITAXIAL AND NON-EPITAXIAL LATERAL OVERGROWTH FROM
SOLUTIONS; R. Köhler, H. Raidt, Max-Planck-Institut für
Metallforschung, Stuttgart, Germany; M. Konuma, A. Gutjahr, I. Silier G.
Cristiani and E. Bauser, Max-Planck-Institut für Festkörperforschung,
Stuttgart, Germany.
D3.26 HETEROGENEOUS GENERATION OF PARTIAL DISLOCATIONS AND STACKING FAULTS
IN COMPOUND SEMICONDUCTORS, Y. Chen, Z. Liliental-Weber and J. Washburn,
Lawrence Berkeley Laboratory, University of California, Berkeley, CA.
D3.27 RELAXATION AND DEFECT NUCLEATION IN HETEROEPITAXIAL Si1-x-yGexCy FILMS
GROWN ON Si(100), Harald Jacobsson, Nicole Herbots, Peihua Ye, Sean Hearne and
Joan Xiang, Arizona State University, Department of Physics and Astronomy,
Tempe, AZ.
JOINT SESSION D4/J2: IN-SITU EPITAXIAL DYNAMICS
Chair: B.S. Schwartzentruber
Tuesday Morning, November 28
Salon C/D (M)
9:00 A.M. *D4.1/J2.1
SNAPSHOTS OF SURFACE STRUCTURE DURING MBE GROWTH OF GaAs AND AlAs, P.I. Cohen,
S.M. Seutter and A.M. Dabiran, University of Minnesota, Department of
Electrical Engineering, Minneapolis, MN.
9:30 A.M. D4.2/J2.2
IN-SITU STM STUDY OF GaSb GROWN ON GaAs(001) BY MBE, P.M. Thibado, B.R.
Bennett, B.V. Shanabrook and L.J. Whitman, Naval Research Laboratory,
Washington, DC.
9:45 A.M. D4.3/J2.3
GROWTH MORPHOLOGY OF VICINAL HILLOCKS ON THE (101) FACE OF KH2PO4: EVIDENCE OF
SURFACE DIFFUSION, T.A. Land, J.J. De Yoreo and J.D. Lee, Lawrence Livermore
National Laboratory, Department of Chemistry and Materials Science, Livermore,
CA.
10:00 A.M. BREAK
10:30 A.M. *D4.4/J2.4
DYNAMIC PROCESSES ON METAL SURFACES STUDIES BY SCANNING TUNNELING MICROSCOPY,
F. Besenbacher, University of Aarhus, Institute of Physics and Astronomy,
Aarhus C, Denmark.
11:00 A.M. D4.5/J2.5
AN IN SITU STM STUDY OF Cu AND Ni DEPOSITION ON Cu(100), T.P. Moffat, National
Institute of Standards and Technology, Materials Science and Engineering
Laboratory, Gaithersburg, MD.
11:15 A.M. D4.6/J2.6
EARLY STAGES OF METAL FILM GROWTH BY CHEMICAL VAPOR DEPOSITION, D.P. Adams,
T.M. Mayer, B.S. Swartzentruber, E. Chason, Sandia National Laboratories,
Albuquerque, NM; S.G. Bales and D. Chrzan, Sandia National Laboratories,
Livermore, CA.
11:30 A.M. D4.7/J2.7
DIRECT MEASUREMENTS OF THE KINETICS OF Si ADDIMERS ON Si(001) USING
ATOM-TRACKING STM, B.S. Swartzentruber, Sandia National Laboratories,
Albuquerque, NM.
SESSION D5: SURFACTANTS, INTERMIXING, AND ALLOYING
Chair: D. Chambliss
Tuesday Afternoon, November 28
Salon C/D (M)
1:30 P.M. *D5.1
SURFACTANT-MEDIATED MOLECULAR BEAM EPITAXY OF III-V SEMICONDUCTORS, N.
Grandjean and J. Massies, Centre de Recherche sur
l'Hétéro-Epitaxie et ses Applications, Centre National de la
Recherche Scientifique, Valbonne, France.
2:00 P.M. D5.2
SURFACTANT-MEDIATED GROWTH OF SiGe/Si QUANTUM-WELL STRUCTURES STUDIES BY
PHOTOLUMINESCENCE TECHNIQUE, S. Nilsson, H.P. Zeindl, J. Klatt, D. Krüger
and R. Kurps, Institute of Semiconductor Physics, Frankfurt/Oder, Germany.
2:15 P.M. D5.3
GaAs-on-Ge HETEROEPITAXY BY ATOMIC HYDROGEN-ASSISTED MOLECULAR BEAM EPITAXY,
Yoshitaka Okada, Atsushi Sutoh and Mitsuo Kawabe, University of Tsukuba,
Institute of Materials Science, Ibaraki, Japan.
2:30 P.M. *D5.4
SUBSTRATE EFFECTS IN EPITAXY AS SEEN BY STM: PLACE EXCHANGE AND STRAIN, J.A.
Meyer and R.J. Behm, Universität Ulm, Oberflächenchemie und Katalyse,
Ulm, Germany.
3:00 P.M. BREAK
3:30 P.M. D5.5
INTERDIFFUSION DURING THE GROWTH OF Fe ON Ag/Fe(110), Raj Persaud, Rutgers,
Serin Labs, Piscataway, NJ; Hisato Noro, NKK Corporation, Kawasaki, Japan; and
John A. Venables, Arizona State University, Tempe, AZ.
3:45 A.M. D5.6
MOLECULAR DYNAMICS OBSERVATION OF INTERMIXING IN THE EARLY GROWTH OF Au ON Ag
(111), Mervine Rosen and Michael I. Haftel, Naval Research Laboratory, Code
6651, Washington, DC.
4:00 P.M. D5.7
THE EFFECT OF STRAIN ON INTRA- AND INTERLAYER MASS TRANSPORT IN METAL EPITAXY,
H. Brune, K. Bromann and K. Kern, EPF Lausanne, Institut de Physique
Expérimentale, Lausanne, Switzerland.
4:15 P.M. D5.8
MISFIT-INDUCED PATTERN FORMATION IN CODEPOSITED MONOLAYERS OF Co AND Ag ON
Mo(110), David Chambliss, Kathrin Kalki, Robert J. Wilson, IBM Almaden Research
Center, San Jose, CA; and Philip H. Lippel, L. Cubed Consulting, Somerville,
MA.
4:30 P.M. *D5.9
STM STUDIES OF THE STRUCTURE AND GROWTH DYNAMICS OF STRAIN STABILIZED 2-d METAL
ALLOYS, A.K. Schmid, J.L. Stevens and R.O. Hwang, Sandia National Laboratories,
Livermore, CA.
SESSION D6: EVOLUTION OF LARGE-SCALE STRUCTURES
Chair: A. Zangwill
Wednesday Morning, November 29
Salon C/D (M)
8:30 A.M. *D6.1
PATTERN FORMATION DURING HOMOEPITTAXIAL GROWTH OF Ge(001) AT LOW TEMPERATURES,
David G. Cahill, Joseph E. Van Nostrand, and S. Jay Chey, University of
Illinois, Department of Materials Science, Urbana, IL.
9:00 A.M. *D6.2
STEP-EDGE BARRIERS ON GaAs(001), P. Smilauer, KFA Jülich, Jülich,
Germany; and D.D. Vvedensky, Imperial College, London, United Kingdom.
9:30 A.M. *D6.3
MORPHOLOGICAL TRANSITION AND LAYER-BY-LAYER GROWTH OF HOMOEPITAXIAL Rh (111),
Frank Tsui, Joanne Wellman, Ctirad Uher and Roy Clarke, University of Michigan,
Department of Physics, Ann Arbor, MI.
10:00 A.M. BREAK
10:30 A.M. D6.4
FORMATION OF PYRAMIDS AND MOUNDS IN MOLECULAR-BEAM EPITAXY, M. Siegert and M.
Plischke, Simon Fraser University, Department of Physics, Burnaby, Canada.
10:45 A.M. D6.5
COARSENING OF MBE STRUCTURES IN 2+1 DIMENSIONS, E. Somfai and L.M. Sander,
University of Michigan, Department of Physics, Ann Arbor, MI.11:00 A.M.
D6.6
INTERFACIAL COARSENING IN AN MBE GROWTH WITHOUT SLOPE SELECTION, Leonardo
Golubovic, West Virginia University, Physics Department, Morgantown, WV.
11:15 A.M. D6.7
RHEED AND AFM ANALYSIS OF THE EVOLUTION OF GROWTH-FRONT MORPHOLOGY DURING THE
CHEMICAL VAPOR DEPOSITION OF Si ON Si(001), D.E. Savage, S. Nayak, J.S.
Sullivan, T.F. Kuech and M.G. Lagally, University of Wisconsin, WI.
11:30 A.M. D6.8
FACETING KINETICS OF STEPPED Si(113) SURFACES: TIME-RESOLVED X-RAY SCATTERING
STUDIES, Seungheon Song, Simon G.J. Mochrie, G. Brian Stephenson, Massachusetts
Institute of Technology, Physics Department, Cambridge, MA.
11:45 A.M. D6.9
ON THE ROUGHENING OF CERAMIC SURFACES, Jason R. Heffelfinger and C. Barry
Carter, University of Minnesota, Department of Chemical Engineering,
Minneapolis, MN.
JOINT SESSION D7/EE4: SELF-ORGANIZED
EPITAXIAL STRUCTURES
Chairs: K.Y. Cheng and J. Mirecki-Millunchick
Wednesday Afternoon, November 29
Salon C/D (M)
1:30 P.M. *D7.1/EE4.1
STRAIN-DRIVEN SELF-ASSEMBLY OF NANOSTRUCTURES, J. Tersoff, IBM T.J. Watson
Research Center, Yorktown Heights, NY.
2:00 P.M. *D7.2/EE4.2
EXISTENCE AND ORIGIN OF THE ENERGY BARRIER OF THE STRESS-DRIVEN 2D TO 3D
TRANSITION, K.M. Chen, D.E. Jesson, S.J. Pennycook, Oak Ridge National
Laboratory, Solid State Division, Oak Ridge, TN; T. Thundat and R.J. Warmack,
Oak Ridge National Laboratory, Health Sciences Division, Oak Ridge, TN.
2:30 P.M. D7.3/EE4.3
EQUILIBRIUM SHAPES OF STRAINED ISLANDS, Brian J. Spencer, SUNY-Buffalo,
Department of Mathematics, Buffalo, NY; and Jerry Tersoff, IBM T.J. Watson
Research Center, Yorktown Heights, NY.
2:45 P.M. D7.4/EE4.4
UNIFORM QUANTUM DOTS BY SELF-ORGANIZING PROCESS IN ATOMIC HYDROGEN-ASSISTED
MBE, Yong-Jin Chun, Shigeru Nakajima, Yoshitaka Okada and Mitsuo Kawabe,
University of Tsukuba, Institute of Materials Science, Ibaraki, Japan.
3:00 P.M. BREAK
3:30 P.M. *D7.5/EE4.5
COMPOSITIONAL ORDERING IN SEMICONDUCTOR ALLOYS, G.B. Stringfellow and L.C. Su,
University of Utah, Department of Materials Science and Engineering, Salt Lake
City, UT.
4:00 P.M. *D7.6/EE4.6
GROWTH AND SPECTROSCOPY OF SELF ASSEMBLED QUANTUM DOTS, G. Medeiros-Ribeiro, M.
Oestreich, University of California, Santa Barbara, Materials Department, Santa
Barbara, CA; F. Pikus, University of California, Santa Barbara, Physics
Department, Santa Barbara, CA; K. Schmidt, Quest, University of California,
Santa Barbara, Santa Barbara, CA; D. Leonard and P.M. Petroff, University of
California, Santa Barbara, Materials Department, Santa Barbara, CA and Quest,
University of California, Santa Barbara, Santa Barbara, CA.
4:30 P.M. D7.7/EE4.7
STRAIN RELAXATION AND ISLANDING TRANSITIONS FOR Ge/Si(100) AND Ge/Si(111), P.W.
Deelman, L.J. Schowalter, Rensselaer Polytechnic Institute, Troy, NY; and T.
Thundat, Oak Ridge National Laboratory, Oak Ridge, TN.
4:45 P.M. D7.8/EE4.8
STRAIN EFFECTS IN InP DOTS IN BETWEEN BARRIERS OF GaInP, Mats-Erik Pistol,
Srinivasan Anand, Niclas Carlsson, Dan Hessman, Lars Landin, Christer Persson,
Lars Samuelson and Werner Seifert, Lund University, Department of Solid State
Physics, Lund, Sweden.
SESSION D8: STRAIN RELAXATION (EXPERIMENT)
Chair: D. Jesson
Thursday Morning, November 30
Salon C/D (M)
8:30 A.M. *D8.1
HETEROEPITAXIAL LAYER MORPHOLOGY AND MISFIT DEFECT FORMATION, A.G. Cullis, DRA
Malvern, Worcs United Kingdom.
9:00 A.M. *D8.2
MISFIT DISLOCATIONS AND RELAXATION, Horst P. Strunk, Silke Christiansen and
Martin Albrecht, Erlangen University, Materials Science
Department-Microcharacterization, Erlangen, Germany.
9:30 A.M. *D8.3
STRAIN RELAXATION AT LOW MISFITS: DISLOCATION INJECTION VS. SURFACE ROUGHENING,
D.D. Perovic, University of Toronto, Department of Metallurgy and Materials
Science, Toronto, Canada; D.C. Houghton and J.-M. Baribeau, National Research
Council, Institute for Microstructural Sciences, Ottawa, Canada.
10:00 A.M. BREAK
10:30 A.M. D8.4
INITIAL STRAIN RELAXATION IN Si1-xGex THIN FILMS, J.L. Jordan-Sweet, P.M.
Mooney, M.A. Lutz, R.M. Feenstra and J.O. Chu, IBM T.J. Watson Research Center,
Yorktown Heights, NY.
10:45 A.M. D8.5
SURFACE MORPHOLOGY OF STRAINED InxGa1-xAs EPILAYERS GROWN ON GaAs SUBSTRATE, Y.
Chen, X.W. Lin, Z. Liliental-Weber, J. Washburn, University of California,
Lawrence Berkeley Laboratory, Berkeley, CA; J.F. Klem and J.Y. Tsao, Sandia
National Laboratories, Albuquerque, NM.
11:00 A.M. D8.6
CORRELATION BETWEEN EXTENDED DEFECTS AND SURFACE MORPHOLOGY IN MBE GROWN
InAs/GaAs HETEROSTRUCTURES, M.R. Bruni, G. Padeletti, M.G. Simeone, CNR, ICMAT,
Roma, Italy; L. Francesio, P. Franzosi, L. Nasi and G. Salviati, CNR, MASPEC,
Parma, Italy.
11:15 A.M. D8.7
ORIENTATION DEPENDENCE OF CdTe/Si GROWN BY MBE, L.A. Almeida, Y.P. Chen, J.P.
Faurie, S. Sivananthan, University of Illinois At Chicago, Microphysics
Laboratory, Physics Department, Chicago, IL; D.J. Smith and S.-C.Y. Tsen,
Arizona State University, Center for Solid State Science, Tempe, AZ.
11:30 A.M. D8.8
STRUCTURAL TRANSISTIONS IN THE STRANSKI-KRASTANOV GROWTH OF Mg ON Mo(001), M.C.
Gallagher, M.S. Fyfield and S.A. Joyce, Pacific Northwest Laboratory, Richland,
WA.
11:45 A.M. D8.9
EVOLUTION OF STRESS DISTRIBUTIONS AND MORPHOLOGY OF CVD DIAMOND FILMS, J.W.
Steeds, N.C. Burton, A.R. Lang, D. Pickard, Yu Shreter, University of Bristol,
Department of Physics, Bristol, United Kingdom; and J.E. Butler, Naval Research
Laboratory, Washington, DC.
SESSION D9: STRAIN RELAXATION (THEORY)
Chair: J. Tersoff
Thursday Afternoon, November 30
Salon C/D (M)
1:30 P.M. *D9.1
THE STABILITY OF LATTICE-MISMATCHED THIN FILMS, J.E. Guyer, M. McCallum, M.J.
Miksis, S.H. Davis and P.W. Voorhees, Northwestern University, Department of
Materials Science, Evanston, IL.
2:00 P.M. *D9.2
OBSERVATIONS ON THE MECHANICS OF STRAINED EPITAXIAL ISLAND GROWTH, L.B. Freund,
Brown University, Division of Engineering, Providence, RI.
2:30 P.M. D9.3
THEORETICAL PREDICTION OF CU OVERLAYER STRUCTURES ON RU(0001) USING 2D
FRENKEL-KONTOROVA MODEL, J.C. Hamilton and S.M. Foiles, Sandia National
Laboratories, Livermore, CA.
2:45 P.M. D9.4
MECHANISM OF DISLOCATION FORMATION AT CRYSTAL SURFACE LEDGES DUE TO COMPRESSIVE
STRAIN, Huajian Gao, Stanford University, Division of Applied Mechanics,
Stanford, CA; L. Ben Freund, Brown University, Division of Engineering,
Providence, RI; and William D. Nix, Stanford University, Department of
Materials Science and Engineering, Stanford, CA.
3:00 P.M. BREAK
3:30 P.M. D9.5
A NEW MODEL FOR THE GENERATION OF MISFIT DISLOCATIONS IN STRAINED EPITAXIAL
FILMS, M. Khantha and V. Vitek, University of Pennsylvania, Department of
Materials Science and Engineering, Philadelphia, PA.
3:45 P.M. D9.6
MICROSTRUCTURE AND STRESS EVOLUTION DURING THIN FILM DEPOSITION: MOLECULAR
DYNAMICS SIMULATIONS, Richard W. Smith, and David J. Srolovitz, University of
Michigan, Department of Materials Science and Engineering, Ann Arbor, MI.
4:00 P.M. D9.7
DEFORMATION BEHAVIOR OF STRAINED LAYER HETEROSTRUCTURES, A. Fisher and H.
Kühne, Institute of Semiconductor Physics, Frankfurt, Germany.
4:15 P.M. D9.8
EQUILIBRIUM RADIUS OF CURVATURE OF EPITAXIALLY STRAINED FILMS, K. Jagannadham,
J. Narayan, North Carolina State University, Department of Materials Science
and Engineering, Raleigh, NC; and J.P. Hirth, Washington State University,
Department of Mechanical and Materials Engineering, Pullman, WA.
4:30 P.M. D9.9
MONTE CARLO SIMULATIONS OF CURVATURE AT SURFACES AND INTERFACES, Olof Hellman,
Akira Seki and Shun-ichiro Tanaka, ERATO, JRDC, Yokohama, Japan.
4:45 P.M. D9.10
INHIBITION OF SURFACE SEGREGATION IN ENERGETIC BEAM EPITAXIAL GROWTH AND
APPLICATION TO SYNTHESIS OF SnxGe1-x ALLOY FILMS, Gang He and Harry A. Atwater,
Thomas J. Watson Laboratory for Applied Physics, California Institute of
Technology, Pasadena, CA.
SESSION D10: POSTER SESSION
STRAIN RELAXATION & EVOLUTION
OF LARGE-SCALE STRUCTURES
Chair: R. Clarke
Thursday Evening, November 30
8:00 P.M.
Grand Ballroom (W)
D10.1 DISLOCATION STRUCTURE EVOLUTION IN THIN SINGLE CRYSTAL PLATES UNDER
CYCLIC LOADING, Yury N. Stepanov, Institute of Metallurgy, Russian Academy of
Sciences, Moscow, Russia; Alexander M. Scorupsky, MIREA, Moscow, Russia.
D10.2 SIZE EFFECTS ON THE CRITICAL THICKNESS OF A STRAINED EPILAYER,
Tong-Yi-Zhang, Hong Kong University of Science and Technology, Department of
Mechanical Engineering, Centre for Advanced Engineering, Kowloon, Hong Kong.
D10.3 INVESTIGATION OF RELATIONSHIPS BETWEEN DISLOCATIONS AND CRYSTAL
SURFACE LEDGES, Jonathan A. Zimmerman, Cengiz S. Ozkan and Huajian Gao,
Stanford University, Mechanical Engineering Department, Stanford, CA.
D10.4 EXPLICIT HIGHER ORDER PERTURBATION SOLUTIONS TO THE SURFACE DIFFUSION
PROBLEMS OF A STRESSED SOLID, Cheng-hsin Chiu and Huajian Gao, Stanford
University, Division of Applied Mechanics, Stanford, CA.
D10.5 ELASTIC ANALYSIS OF THIN FILM TWINNING, N. Sridhar, UNIVERSITY OF
MICHIGAN, Department of Materials Science and Engineering, Ann Arbor, MI; J.M.
Rickman, Lehigh University, Department of Materials Science and Engineering,
Bethlehem, PA; and D.J. Srolovitz, University of Michigan, Department of
Materials Science and Engineering, Ann Arbor, MI.
D10.6 STRAIN RELAXATION IN HETEROEPITAXIAL Si1-xGex FILMS VIA SURFACE
ROUGHENING PROCESSES, Cengiz S. Ozkan, William D. Nix and Huajian Gao, Stanford
University, Materials Science and Engineering Department, Stanford, CA.
D10.7 SURFACE WAVES GENERATED BY STRAIN RELAXATION IN SiGe FILMS GROWN BY
UHV-CVD AND MBE AT LOW TEMPERATURE, H. Lafontaine, D.C. Houghton and J.M.
Baribeau, National Research Council of Canada, Ottawa, Canada.
D10.8 MORPHOLOGICAL EVOLUTION DURING GE/Sl(100) HETEROEPITAXY, Loren Espada,
Sergio Chaparro, Jose Aguilar, Melissa Dorrance, University of Texas at El
Paso, Materials Research Institute, Department of Physics, El Paso, TX; Michael
McKay, University of Texas at El Paso, Department of Physics, El Paso, TX; Ken
Payne, University of Texas at El Paso, Department of Computer Science, El Paso,
TX; and Jeff Drucker, University of Texas at El Paso, Materials Research
Institute, Department of Physics, El Paso, TX.
D10.9 SYNCHROTRON WHITE BEAM TOPOGRAPHY STUDIES OF RESIDUAL STRESS IN SiC
SINGLE CRYSTAL WAFERS WITH EPITAXIAL THIN FILMS, W. Huang, Q. Wang, T. Fanning,
M. Dudley, F.P. Chiang, State University of New York at Stony Brook, Department
of Materials Science and Engineering, Stony Brook, NY; J. Parsons, Oregon
Graduate Institute, Beaverton, OR; and C. Fazi, U.S. Army Research Laboratory,
Adelphi, MD.
D10.10 DEFECT STRUCTURES IN GaP/Si, Srikanth B. Samavedam, E.P. Kvam, Purdue
University, School of Materials Engineering, West Lafayette, IN; G. Ford, B.W.
Wessels, Northwestern University, Department of Materials Science and
Engineering, Evanston, IL; T.P. Chin and J.M. Woodall, Purdue University,
School of Electrical Engineering, West Lafayette, IN.
D10.11 STRAIN RELAXATION IN GaAs ON Si BY TWO GROUPS OF MISFIT DISLOCATIONS,
M. Tamura, T. Saitoh and T. Yodo, Optoelectronics Technology Research
Laboratory, Ibaraki, Japan.
D10.12 FORMATION OF INTERFACIAL DEFECTS IN HETEROEPITAXIAL LAYERS GROWN IN
TWO-DIMENSIONAL MODE, Serge Oktyabrsky and J. Narayan, North Carolina State
University, Department of Materials Science and Engineering, Raleigh, NC.
D10.13 ANISOTROPIC LATTICE RELAXATION AND ITS MECHANISM OF ZnSe EPILAYER
GROWN ON (001) GaAs SUBSTRATE BY MOLECULAR BEAM EPITAXY, Chang Soo Kim, Sam Kyu
Noh, Hwack Joo Lee, Yang Koo Cho, Yong Il Kim, Korea Research Institute of
Standards and Science, Materials Evaluation Center, Taejon, Korea; Hae Sung
Park and Tae Il Kim, Samsung Advanced Institute of Technology, Materials and
Devices Research Center, Suwon, Korea.
D10.14 RECIPROCAL SPACE ANALYSIS OF THE INITIAL STAGES OF STRAIN RELAXATION
IN SiGe EPILAYERS, S.R. Lee and J.A. Floro, Sandia National Laboratories,
Albuquerque, NM.
D10.15 CHARACTERIZATION OF Ge/Si AND GaAs/Si HETEROSTRUCTURES BY HRTEM,
ATOMISTIC MODELING AND MULTISLICE SIMULATION, Tsvetanka Zheleva, S. Oktyabrsky,
M. Ichimura and J. Narayan, North Carolina State University, Department of
Materials Science and Engineering, Raleigh, NC.
D10.16 CHARACTERIZATION OF SiGeC LAYERS ON (100)Si USING X-RAY DIFFRACTION
AND ION BEAM CHANNELING, A.E. Bair, T.L. Alford, Z. Atzmon, Arizona State
University, Department of Chemical, Bio and Materials Engineering, Tempe, AZ;
and J.W. Mayer, Arizona State University, Center for Solid State Science,
Tempe, AZ.
D10.17 CATION SUBLATTICE STACKING FAULTS IN Cu-RICH CHALCOPYRITE CuInSe2,
Olof Hellman, Shun-Ichiro Tanaka, ERATO, JRDC, Yokohama, Japan; Shigeru Niki
and Paul Fons, Electrotechnical Laboratory, Optoelectronics Division, Ibaraki,
Japan.
D10.18 EFFECT OF THE INTRODUCTION OF A MBE BUFFER LAYER ON THE MORPHOLOGY OF
InSb ALMBE LAYERS GROWN ON InP SUBSTRATES, J.C. Ferrer, A. Cornet, R.
Pieró, J.R. Morante, EME, Dept. Física Aplicada i
Electrónica, Barcelona, Spain; T. Utzmeier and F. Briones, Instituto de
Microelectrónica de Madrid (CSIC), Madrid, Spain.
D10.19 TWINNING IN CdTe EPILAYERS ON (211) Si: INFLUENCE OF BUFFER LAYER
THICKNESS AND SUBSTRATE INCLINATION, A. Gray, N.K. Dhar, W. Clark, Army
Research Lab., Ft. Belvoir, VA; J.H. Dinan, U.S. Army NVESD, Ft. Belvoir, VA;
R. Segnan, American University, Washington, DC; and W.E. Mayo, Rutgers
University, Piscataway, NJ.
D10.20 TEM STUDY OF STACKING FAULTS FORMED IN PAIRS IN A ZnSe EPITAXIAL
LAYER ON A GaAs(001) BUFFER LAYER, J. Tanimura, O. Wada, T. Ogama, Y. Endoh and
M. Imaizumi, Mitsubishi Electric Corporation, Hyogo, Japan.
D10.21 SURFACE SMOOTHING OF Ge(001) WITH NANOSCALE ROUGHNESS DURING THERMAL
ANNEALING, S. Jay Chey, Joseph E. Van Nostrand and David G. Cahill, University
of Illinois, Department of Materials Science and Engineering, Urbana, IL.
D10.22 EFFECT OF APPLIED ELECTRIC FIELD ON FACETING KINETICS, Mirang Yoon,
Seungheon Song and Simon G.J. Mochrie, Massachusetts Institute of Technology,
Physics Department, Cambridge, MA.
D10.23 COARSENING OF 3-DIMENSIONAL SURFACE FEATURES ON Rh (111) DURING
ANNEALING, Joanne Wellman, Frank Tsui, Ctirad Uher and Roy Clarke, University
of Michigan, Department of Physics, Ann Arbor, MI.
D10.24 THE INFLUENCE OF MISFIT DISLOCATION-INDUCED LOCAL STRAIN REDUCTION ON
STRAINED LAYER HETEROEPITAXIAL GROWTH, G. Springholz, V. Holy and G. Bauer,
Universität Linz, Linz, Austria.
D10.25 CONTROL OF DEFECT STRUCTURES IN CuGaSe2 EPITAXIAL FILMS, Wei Chen,
Gin-Lern Cu and Bae-Heng Tseng, National Sun Yat-Sen University, Institute of
Materials Science and Engineering, Kaohsiung, Taiwan.
D10.26 EXPERIMENTAL AND THEORETICAL INVESTIGATION OF PbTe GROWTH BY MBE ON
(111) BARIUM FLUORIDE SUBSTRATE, K.I. Andronik, O.Yu. Keloglu, E.A. Zasavitski,
V.A. Mazur Institute of Applied Physics, Academy of Sciences, Kishinev,
Moldova.
SESSION D11: STEPS, ADATOMS AND ISLANDS
Chair: D. Jesson
Friday Morning, December 1
St. George B (W)
8:30 A.M. *D11.1
ATOMIC PROCESSES IN CRYSTAL GROWTH AT LOW TEMPERATURES: DIRECT OBSERVATIONS,
Gert Ehrlich, University of Illinois at Urbana-Champaign, Materials Research
Laboratory and Department of Materials Science and Engineering, Urbana, IL.
9:00 A.M. D11.2
FIRST-PRINCIPLES STUDY OF DOMAIN EVOLUTION OF IR ON IR(111), M. Habar,
Université de Haute Alsace, Mulhouse, France; S. Ouannasser,
Université Louis Pasteur, Strasbourg, France; L. Stauffer,
Université de Haute Alsace, Mulhouse, France; H. Dreyssé,
Université Louis Pasteur, Strasbourg, France; and L.T. Wille,
Université Louis Pasteur, Strasbourg, France and Florida Atlantic
University, Boca Raton, FL.
9:15 A.M. D11.3
INITIAL STAGE OF ISLAND FORMATION IN THE GROWTH OF ULTRATHIN Ag FILMS ON
Si(111)-7x7 SURFACE INVESTIGATED BY STM, Kang Ho Park, Jeong Sook Ha, Seong-Ju
Park and El-Hang Lee, Electronics and Telecommunications Research Institute
(ETRI), Research Department, Daejon, Korea.
9:30 A.M. D11.4
ELASTIC ANALYSIS AND COMPUTER SIMULATION OF SURFACE DEFECTS, L.E. Shilkrot and
D.J. Srolovitz, University of Michigan, Department of Materials Science and
Engineering, Ann Arbor, MI.
9:45 A.M. BREAK
10:15 A.M. *D11.5
SIMULATIONS OF CRYSTAL GROWTH: STEP FLOW AND LOW TEMPERATURE GROWTH, C. Roland,
North Carolina State University, Department of Physics, Raleigh, NC; G.H.
Gilmer, AT&T Bell Laboratories, Murray Hill, NJ; Q.M. Zhang, P. Boguslawski
and J. Bernhold, North Carolina State University, Department of Physics,
Raleigh, NC.
10:45 A.M. D11.6
STEP DYNAMICS OF THE RELAXATION OF FABRICATED STRUCTURES ON Si(111), Elain Fu,
M.D. Johnson and E.D. Williams, University of Maryland, Department of Physics,
College Park, MD.
11:00 A.M. D11.7
MORPHOLOGY AND STEP STRUCTURE OF TWO-DIMENSIONAL PERIODIC CORRUGATED Si
SURFACES, C.C. Umbach, B.D. Bunday, S. Tanaka and J.M. Blakely, Cornell
University, Department of Materials Science, Ithaca, NY.
11:15 A.M. D11.8
COMPETING DESORPTION PATHWAYS DURING EPITAXIAL GROWTH STUDIED BY LEEM, M.S.
Altman, E.Z. Luo, W.F. Chung, Q. Cai, Hong Kong University of Science and
Technology, Kowloon, Hong Kong; and B. Orr, University of Michigan, Randall
Laboratory of Physics, Ann Arbor, MI.
11:30 A.M. *D11.9
AN ATOMIC VIEW OF THE ROLE OF SURFACTANTS IN EPITAXIAL GROWTH OF METALLIC
SUPERLATTICES, R. Miranda, Universidad Autónoma de Madrid, Instituto de
Ciencia de Materiales, Madrid, Spain.
SESSION D12: INTERFACE ROUGHNESS AND INTERDIFFUSION
Chair: R. Clarke
Friday Afternoon, December 1
St. George B (W)
1:30 P.M. *D12.1
X-RAY DIFFRACTION STUDIES OF THE GROWING Si(001)/SiO2 INTERFACE, K.W.
Evans-Lutterodt, M.L. Green, D. Brasen, K. Krisch, L. Manchanda, G.S. Higashi,
T. Boone, AT&T Bell Laboratories, Murray Hill, NJ; and Mau-Tsu Tang, SRRC,
Taiwan.
2:00 P.M. D12.2
GROWTH OF EPITAXIAL METASTABLE, Ge1-xSnx/Ge STRAINED LAYER SUPERLATTICES AND
Ge1-xSnx ALLOYS ON Ge(001)2x1 BY TEMPERATURE MODULATED MOLECULAR BEAM EPITAXY,
O. Gurdal, M.A. Hasan, M.R. Sardela Jr., J.E. Greene, University of Illinois,
Materials Science Department, Urbana, IL; H.H. Radamson, J.E. Sundgren and G.V.
Hansson, Linköping University, Physics Department, Linköping,
Sweden.
2:15 P.M. D12.3
GROWTH OF (InAl)GaAs ON HIGH QUALITY, EPITAXIAL, PSEUDOMORPHIC NiAl METAL
FILMS, Mark V. Weckwerth, Cheng-Yu Hung, Mark Visokay, Stanford University,
Solid State Laboratory, Stanford, CA; Yi-Ching Pao, Litton Solid State, Santa
Clara, CA; and James S. Harris Jr., Stanford University, Department of
Electrical Engineering, Stanford, CA.
2:30 P.M. BREAK
3:00 P.M. D12.4
DOUBLE PERIODICITY FORMATION IN EuTe/PbTe SUPERLATTICES, M. Shima, L.
Salamanca-Riba, University of Maryland, Materials and Nuclear Engineering,
College Park, MD; G. Springholz and G. Bauer, Johannes Kepler Universität,
Institut für Halbleiterphysik, Linz, Austria.
3:15 P.M. D12.5
HIGH RESOLUTION X-RAY REFLECTIVITY DETERMINATION OF INTERFACE ROUGHNESS AND
CORRELATION, R.L. Headrick, Cornell University, Ithaca, NY; J.-M. Baribeau,
National Research Council Canada, Institute for Microstructural Sciences,
Ottawa, Canada.
3:30 P.M. D12.6
STRAIN-INDUCED DIFFUSION IN HETEROEPITAXIALLY GROWN CuInSe2 ON GaAs SUBSTRATES,
P. Fons, S. Niki, A. Yamada, A. Okada and D.J. Tweet, Electrotechnical
Laboratory, Ibaraki, Japan.
3:45 P.M. D12.7
ATOMIC SCALE STUDY OF THE Ge/GaAs (001) HETEROPHASE INTERFACE USING
CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY, Y.-C. Kim, M.J. Nowakowski, D.N.
Seidman, Northwestern University, Department of Materials Science and
Engineering, Evanston, IL; M. Dubey and K.A. Jones, Army Research Lab, Physical
Science Division, Fort Monmouth, NJ.
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