*Invited Paper
SESSION AAA1: Blue and Green Devices
Chairs: Russell Dupuis and Theodore Moustakas
Monday Morning, November 27
Republic Ballroom (S)
8:30 A.M. *AAA1.1
VISIBLE LIGHT EMITTING DIODE (LED) TECHNOLOGY: STATUS, TRENDS, AND THE
POTENTIAL IMPACT OF AlInGaN DEVICES, M. George Craford, Hewlett-Packard,
Optoelectronics Division, San Jose, CA.
9:00 A.M. *AAA1.2
STIMULATED EMISSION AND LASER ACTION BY OPTICAL PUMPING AT ROOM TEMPERATURE
FROM ALGAN/GAINN DOUBLE HETEROSTRUCTURE GROWN ON 6H-SiC, H. Amano, S.
Sota, M. Nishikawa, M. Yoshida, M. Kawaguchi, M. Ohta, H. Sakai and I Akasaki,
Meijo University, Department of Electrical and Electronic, Nagoya, Japan.
9:30 A.M. AAA1.3
OPTICALLY-PUMPED GaN-AlGaN DOUBLE-HETEROSTRUCTURE LASERS GROWN BY ECR-GSMBE AND
HVPE, P.A. Maki, R.J. Molnar, R.L. Aggarwal, Z.L. Liau and I.
Melngailis, Lincoln Laboratory, Massachusetts Institute of Technology,
Lexington, MA.
9:45 A.M. AAA1.4
ANALYSIS OF WURTZITE GaN/AlGaN QUANTUM WELL LASERS FROM FIRST PRINCIPLE
CALCULATIONS, T. Uenoyama, M. Suzuki Central Research Laboratories,
Kyoto, Japan; and S. Kamiyama, Semiconductor Research Center, Matsushita
Electric Industrial Company, Ltd., Kyoto, Japan.
10:00 A.M. BREAK
10:30 A.M. AAA1.5
InGaN LIGHT-EMITTING DIODES WITH QUANTUM-WELL STRUCTURES, Shuji
Nakamura, Nichia Chemical Industries, Ltd., Department of Research and
Development, Tokushima, Japan.
11:00 A.M. AAA1.6
InGaN/GaN MULTIPLE QUANTUM WELL DEPOSITIONS FROM A MULTI WAFER ROTATING DISC
REACTOR, C. Yuan, T. Salagaj, M. Schurman, R.A. Stall, EMCORE Research
Laboratory, Somerset, NJ; S. Krishnankutty and R.M. Kolbas, North Carolina
State University, Raleigh, NC.
11:15 A.M. AAA1.7
BLUE-GREEN LED MATERIAL BASED ON III-NITRIDE MOCVD, D. Schmitz, E. Woelk, G.
Strauch and H. Jürgensen, AIXTRON GmbH, Aachen, Germany.
11:30 A.M. AAA1.8
MBE GROWTH OF InxGa(1-x)N (0<= x <= 0.91) FILMS AT GaN GROWTH
TEMPERATURES, R. Singh and T.D. Moustakas, Boston University, Department
of Electrical Engineering and Center for Photonics Research, Boston, MA.
11:45 A.M. AAA1.9
HIGH-PRECISION CHARACTERIZATION OF III-NITRIDE SEMICONDUCTOR ALLOYS WITH
SECONDARY ION MASS SPECTROMETRY (SIMS), Jon W. Erickson and Yumin Gao,
Charles Evans and Associates, Redwood City, CA.
SESSION AAA2: GROWTH I
Chairs: George Craford and H. Amano
Monday Afternoon, November 27
Republic Ballroom (S)
1:30 P.M. *AAA2.1
ECR-ASSISTED MBE, T. Moustakas, Boston University, Boston, MA.
2:00 P.M. *AAA2.2
STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF HIGH QUALITY MBE GROWN GAN,
H. Morkoç, University of Illinois, Materials Research Laboratory
and Coordinated Science Laboratory, Urbana, IL.
2:30 P.M. AAA2.3
PLASMA-ASSISTED MBE OF GaN AND AlGaN ON 6H-SiC (0001), S. Sinharoy, A.K.
Agarwal, L.B. Rowland, G. Augustine, R.L. Messham, M.C. Driver and R.H.
Hopkins, Westinghouse Science and Technology Center, Pittsburgh, PA.
2:45 P.M. AAA2.4
MBE GROWTH OF GaN USING LOW ENERGY IONS, Evan Jones, Nate Newman,
Alexandra Gassmann, Andre Anders, University of California, Berkeley, Lawrence
Berkeley Laboratory, Berkeley, CA; Larry Schloss, University of California,
Berkeley, Berkeley, CA; Liu Xiao, University of California, Berkeley, Lawrence
Berkeley Laboratory, Berkeley, CA; James Chan, University of California,
Berkeley, Berkeley, CA; Christian Kisielowski, Mike Rubin, University of
California, Berkeley, Lawrence Berkeley Laboratory, Berkeley, CA; Eicke Weber
and Nathen Cheung, University of California, Berkeley, Berkeley, CA.
3:00 P.M. BREAK
3:30 P.M. *AAA2.5
GROWTH AND PROPERTIES OF III-V NITRIDE FILMS, QUANTUM WELL STRUCTURES AND
INTEGRATED HETEROSTRUCTURE DEVICES, J.F. Schetzina, North Carolina State
University, Department of Physics, Raleigh, NC.
4:00 P.M. AAA2.6
ECR ETCHING CHARACTERISTICS OF GaN IN SiCl4/Ar PLASMAS, L. Zhang, J.
Ramer, K. Zheng, L.F. Lester and S.D. Hersee, University of New Mexico, Center
for High Technology Materials, Albuquerque, NM.
4:15 P.M. AAA2.7
THE INVESTIGATION OF GaN AND InN GROWTH ON Si AND SAPPHIRE USING IN-SITU TIME
OF FLIGHT LOW ENERGY ION SCATTERING (TOF-LEIS) AND RHEED, W. Taferner,
A. Bensaoula, E. Kim and A. Bousetta, Space Vacuum Epitaxy Center/University of
Houston, Houston, TX.
4:30 P.M. AAA2.8
GROWTH AND OPTICAL PROPERTIES OF GaN GROWN BY MBE ON NOVEL LATTICE-MATCHED
OXIDE SUBSTRATES, J.F.H. Nicholls, University of Strathclyde, Department
of Physics and Applied Physics, Optical Materials Research Centre, Glasgow,
United Kingdom; C.T. Foxon, University of Nottingham, Department of Physics and
Applied Physics, Nottingham, United Kingdom; K.P. O'Donnell, University of
Strathclyde, Department of Physics and Applied Physics, Semiconductor
Spectroscopy and Devices, Glasgow, United Kingdom; B. Henderson, University of
Strathclyde, Department of Physics and Applied Physics, Optical Materials
Research Centre, Glasgow, United Kingdom; C. Trager-Cowan, University of
Strathclyde, Department of Physics and Applied Physics, Semiconductor
Spectroscopy and Devices, Glasgow, United Kingdom; H. Gallagher, University of
Strathclyde, Department of Physics and Applied Physics, Optical Materials
Research Centre, Glasgow, United Kingdom; and B.H.T. Chai, University of
Central Florida, Center for Research and Education in Optics and Lasers,
Orlando, FL.
4:45 P.M. AAA2.9
HALIDE VAPOR PHASE EPITAXY OF GAN FILMS ON SAPPHIRE AND SI SUBSTRATES, N.R.
Perkins, M.N. Horton and T.F. Kuech, University of Wisconsin, Department of
Chemical Engineering, Madison, WI.
SESSION AAA3: POSTER SESSION
CRYSTAL GROWTH ISSUES
Chair: Kathy Doverspike
Monday Evening, November 27
8:00 P.M.
Grand Ballroom (S)
AAA3.1 AlN FILMS DEPOSITED BY LP-MOCVD ATOMIC LAYER GROWTH AT
LOWER TEMPERATURES USING DMEAA AND AMMONIA, J.N. Kidder Jr., University
of Washington, Department of Materials Science and Engineering, Seattle, WA;
Jason Kuo, University of Washington, Department of Chemical Engineering,
Seattle, WA; T.P. Pearsall, J.W. Rogers Jr., University of Washington,
Department of Materials Science and Engineering, Seattle, WA; and J.W. Rogers
Jr., University of Washington, Department of Chemical Engineering, Seattle,
WA.
AAA3.2 HYDRAZOIC ACID: A POTENT `ACTIVE NITROGEN' PRECURSOR
FOR GROUP III NITRIDE GROWTH, Andrew Freedman and Gary N. Robinson,
Aerodyne Research, Inc., Center for Chemical and Environmental Physics,
Billerica, MA.
AAA3.3 GROWTH OF GaN ON (100)Si USING NEW C/H-FREE SINGLE
SOURCE PRECURSORS, John Kouvetakis, Phil Matsunaga, Michael Todd,
Arizona State University, Department of Chemistry. Tempe, AZ; David J. Smith,
Arizona State University, Department of Physics, Tempe, AZ; and David Beach,
Oak Ridge National Laboratory, Department of Chemistry, Oak Ridge, TN.
AAA3.4 A NEW SINGLE SOURCE PRECURSOR APPROACH TO GALLIUM AND
ALUMINUM NITRIDE, Deborah A. Neumayer, IBM T.J. Watson Research Center,
Yorktown Heights, NY; V. Lakhotia, M.F. Arendt, B. Walden, A.H. Cowley, R.A.
Jones and J.G. Ekerdt, University of Texas, Science and Technology Center for
Synthesis, Growth and Analysis of Electronic Materials, Austin, TX.
AAA3.5 STRUCTURAL DISORDER IN GaN NUCLEATION LAYERS ON
SAPPHIRE; D. Kapolnek, X.H. Wu, E. Tarsa, University of California,
Materials Department, Santa Barbara, CA; S. Keller, B.P. Keller, U.K. Mishra,
S.P. DenBaars, University of California, Electrical and Computer Engineering
Department, Santa Barbara, CA; and J.S. Speck, University of California,
Materials Department, Santa Barbara, CA.
AAA3.6 A STUDY OF THE GROWTH PARAMETERS THAT INFLUENCE THE
INITIAL STAGES OF MOCVD GROWTH OF GaN ON SAPPHIRE, J.C. Ramer, K. Zheng,
M. Banas, C.F. Kranenberg and S.D. Hersee, University of New Mexico, Center for
High Technology Materials, Albuquerque, NM.
AAA3.7 LOW TEMPERATURE EPITAXIAL GROWTH OF AlN AND GaN THIN
FILMS BY THE METHOD OF ION-ASSISTED DEPOSITION, Ig-Hyeon Kim, Chan-Wook
Jeon and Seon-Hyo Kim, POSTECH, Department of Materials Science and English,
Pohang, Korea.
AAA3.8 THE SURFACE CHEMISTRY OF TRIALLYLAMINE ON Si(111), G.
Landmesser, D. Freundt, Institut für Schicht- und Ionentechnik (ISI),
Forschungszentrum Jülich, Jülich, Germany; A. Rizzi,
Università di Modena, Dipartimento di Fisica, Modena, Italy; and H.
Lüth, Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum
Jülich, Jülich, Germany.
AAA3.9 NEW BUFFER LAYERS FOR GaN ON SAPPHIRE BY ATOMIC LAYER
AND MOLECULAR STREAM EPITAXY, E.L. Piner, Y.W. He, K.S. Boutros, F.G.
McIntosh, J.C. Roberts, S.M. Bedair and N.A. El-Masry, North Carolina State
University, Department of Materials Science and Engineering, Raleigh, NC.
AAA3.10 THE EFFECT OF A GaN NUCLEATION LAYER ON GaN FILM
PROPERTIES GROWN BY METALORGANIC VAPOR DEPOSITION, Wim Van der Stricht,
Ingrid Moerman, Piet Demeester, University of Gent-IMEC, Department of
Information Technology, Gent, Belgium; John Crawley and Ted Thrush, Thomas Swan
& Company, Ltd., Cambridge, United Kingdom.
AAA3.11 A MODELING STUDY OF GaN GROWTH BY MOVPE, S.A.
Safvi, T.F. Kuech, University of Wisconsin, Department of Chemical
Engineering, Madison, WI; Joan Redwing and Mike Tischler, Advanced Technology
Materials, Danbury, CT.
AAA3.12 SURFACE MORPHOLOGY AND MOSAIC DISPERSION IN GaN AND
AlxGa1-xN FILMS GROWN BY LOW-PRESSURE MOCVD, T.J. Kistenmacher, D.K.
Wickenden, The Johns Hopkins University, Applied Physics Laboratory, Laurel,
MD; M.E. Hawley Los Alamos National Laboratory, Los Alamos, NM; and R.P.
Leavitt, U.S. Army Research Laboratory, Adelphi, MD.
AAA3.13 FACETS FORMATION MECHANISM OF GaN HEXAGONAL PYRAMIDS
ON DOT-PATTERNS VIA SELECTIVE MOVPE, Kazumasa Hiramatsu, Shota Kitamura
and Nobuhiko Sawaki, Nagoya University, Department of Electronics, Nagoya,
Japan.
AAA3.14 GaN-MOVPE: CORRELATION BETWEEN COMPUTER MODELLING AND
EXPERIMENTAL DATA, Y.N. Makarov, L. Kadinski, University of
Erlangen-Nürnberg, Erlangen, Germany; E. Woelk, G. Strauch, D. Schmitz and
H. Juergensen, AIXTRON GmbH, Aachen, Germany.
AAA3.15 GALLIUM NITRIDE ON SILICON EPITAXY: IMPORTANCE OF
SUBSTRATE PREPARATION PROCEDURE, Gregory A. Martin, University of
Illinois at Urbana-Champaig, Coordinated Science Laboratory and Materials
Research Laboratory, Urbana, IL and Arizona State University, Department of
Physics and Astronomy and Center for Solid State Science, Tempe, AZ; Boris N.
Sverdlov, Hadis Morkoc, University of Illinois at Urbana-Champaign, Coordinated
Science Laboratory and Materials Research Laboratory, Urbana, IL; D.J. Smith
and S.-C.Y. Tsen, Arizona State University, Department of Physics and Astronomy
and Center for Solid State Science, Tempe, AZ; W. Howard Thompson and Munir H.
Nayfeh, University of Illinois at Urbana-Champaign, Department of Physics,
Urbana, IL.
AAA3.16 GROWTH AND DOPING OF AlXGa1-XN ON (6H)-SiC SUBSTRATES
VIA ORGANOMETALLIC VAPOR PHASE EPITAXY, Michael D. Bremser, K. Shawn
Ailey, William G. Perry, Edwin L. Piner, Nadia A. El-Masry and Robert F. Davis,
North Carolina State University, Raleigh, NC.
AAA3.17 BLUE-GREEN LASER MOCVD TECHNOLOGY BASED ON SiC/GaN, G.
Strauch, D. Schmitz, E. Woelk, F. Schulte and H. Jürgensen, AIXTRON
GmbH, Aachen, Germany.
AAA3.18 MOVPE GROWTH OF HIGH ELECTRON MOBILITY AlGaN/GaN
HETEROSTRUCTURES, J.M. Redwing, M.A. Tischler, S. Choi, Advanced
Technology Materials, Inc., Danbury, CT; W. Mitchel and A. Saxler, Electronic
and Optical Materials Branch, Wright- Patterson AFB, OH.
AAA3.19 MOCVD OF HIGH QUALITY GaInN FILMS, J.C.
Roberts, G. McIntosh, K. Boutros, E. Piner, N. El-Masry and S.M. Bedair,
North Carolina State University, Department of Electrical and Computer
Engineering, Raleigh, NC.
AAA3.20 DESIGN, GROWTH AND OPTICAL CHARACTERIZATION OF
GaN/AlGaN BRAGG REFLECTORS, J.M. Redwing, M.A. Tischler, Advanced
Technology Materials, Inc., Danbury, CT; D.A. Loeber and N.G. Anderson,
University of Massachusetts, Department of Electrical and Computer Engineering,
Amherst, MA.
AAA3.21 ECR-MBE AND GSMBE OF GALLIUM NITRIDE ON Sl(111), U.
Rössner, J.-L. Rouvière and A. Bourret, A. Barski, CEA -
CENG, Grenoble, France.
AAA3.22 GROWTH EVOLUTION OF WIDE BANDGAP NITRIDE
SEMICONDUCTORS BY PLASMA SOURCE MOLECULAR BEAM EPITAXY ON HYDROGEN TERMINATED
SILICON, G.W. Auner, R. Krupitskaya, P. Zatko, Wayne State University,
Department of Electrical and Computer Engineering, Detroit, MI; Gang-Yu Liu, W.
Kiridena, K.-Wadu- Mesphrige, Wayne State University, Department of Chemistry,
Detroit, MI; R. Naik and P.K. Kuo, Wayne State University, Department of
Physics, Detroit, MI.
AAA3.23 GALLIUM INCORPORATION KINETICS DURING GAS-SOURCE
MOLECULAR BEAM EPITAXY GROWTH OF GALLIUM NITRIDE, T. Lei, C.R. Jones, R.
Kaspi and K.R. Evans, Wright Laboratory, WL/ELDM, WPAFB, OH.
AAA3.24 THE PRODUCTION OF LOW ENERGY, IONIZED NITROGEN IN THE
UHV ENVIRONMENT, Michael Stumborg, Fransisco Santiago, Tak Kin Chu and
Kevin Boulais, Naval Surface Warfare Center, Dahlgren Division, Silver Spring,
MD.
SESSION AAA4: GROWTH II
Chairs: Hadis Morkoc and Jan Schetzina
Tuesday Morning, November 28
Republic Ballroom (S)
9:00 A.M. *AAA4.1
GROWTH OF CUBIC GaN BY MBE, O. Brandt, Paul-Drude Institute,
Festkoerperelektronik, Berlin, Germany.
9:30 A.M. AAA4.2
ATMOSPHERIC MOCVD GROWTH OF HIGH QUALITY EPITAXIAL GAN ON SAPPHIRE USING MIXED
CUBIC/HEXAGONAL BUFFER LAYERS, X.H. Wu, D. Kapolnek, B. Heying, E.J. Tarsa,
University of California, Materials Department, Santa Barbara, CA; S. Keller,
B. Keller, U.K. Mishra, S.P. DenBaars, University of California, Electrical and
Computer Engineering Department, Santa Barbara, CA; and J.S. Speck,
University of California, Materials Department, Santa Barbara, CA.
9:45 A.M. AAA4.3
LOW TEMPERATURE GROWTH OF HIGH QUALITY InxGa1-xN (0<=x0<=0.27) BY ATOMIC
LAYER EPITAXY, K.S. Boutros, J.C. Robert, G. McIntosh, E. Piner, N.A.
El-Masry and S.M. Bedair, North Carolina State University, Department of
Electrical and Computer Engineering, Raleigh, NC.
10:00 A.M. BREAK
10:30 A.M. *AAA4.4
GaAsN ALLOYS AND GaN/GaAs DOUBLE-HETERO STRUCTURES, Michio Sato, NTT
Basic Research Laboratories, Kanagawa, Japan.
11:00 A.M. AAA4.5
AlGaInN QUATERNARY ALLOY BY MOCVD, G. McIntosh, E. Piner, K. Boutros, J.
Roberts, N. El-Masry and S.M. Bedair, North Carolina State University,
Department of Electrical and Computer Engineering, Raleigh, NC.
11:15 A.M. AAA4.6
SUPERSONIC JET EPITAXY: AN IMPROVED METHOD FOR NITRIDE DEPOSITION, Peter E.
Norris, Long De Zhu and H. Paul Maruska, NZ Applied Technologies, Woburn,
MA.
11:30 A.M. AAA4.7
IN SITU MONITORING OF GALLIUM NITRIDE MOCVD IN A ROTATING DISK REACTOR, K.P.
Killeen, Sandia National Laboratories, Albuquerque, NM.
11:45 A.M. AAA4.8
THE EPITAXIAL GROWTH OF SMOOTH AND THICK GaN FILMS BY HYDRIDE VPE, R.P.
Vaudo, K.J. Nam, I.D., Goepfert and T.D. Moustakas, Boston University,
Boston, MA; and H.P. Maruska, NZ Applied Technologies, Wobum, MA.
SESSION AAA5: GROWTH III
Chairs: Shuji Nakamura and Michio Sato
Tuesday Afternoon, November 28
Republic Ballroom (S)
2:00 P.M. *AAA5.1
LIGHT-EMITTING DEVICES BASED ON GALLIUM NITRIDE AND RELATED COMPOUND
SEMICONDUCTORS, M. Koike, N. Shibata, H. Kato, S. Yamasaki, N. Koike,
Toyoda Gosei Corporation, Aichi, Japan; H. Amano and I. Akasaki, Meijo
University, Department of Electrical and Electronic Engineering, Nagoya,
Japan.
2:30 P.M. AAA5.2
LIGHT EMISSION PROPERTIES OF GaN-BASED DOUBLE HETEROSTRUCTURES AND QUANTUM
WELLS, David A. Loeber, Neal G. Anderson, University of Massachusetts,
Amherst, Department of Electrical and Computer Engineering, Amherst, MA; Joan
M. Redwing and Michael A. Tischler, ATMI, Danbury, CT.
2:45 P.M. AAA5.3
ALTERNATIVE ROUTES TO THE MOVPE GROWTH OF GaN AND AlN, J.S. Roberts, V.
Roberts, University of Sheffield, Department of Electronic and Electrical
Engineering, Sheffield, United Kingdom; A.C. Jones and S. Rushworth, Epichem
Ltd, Wirral, United Kingdom.
3:00 P.M. BREAK
3:30 P.M. *AAA5.4
HIGH BIRGHTNESS GaN/SiC BLUE LED's, K.S. Kong, Cree Research Inc.,
Durham, NC.
4:00 P.M. AAA5.5
LOW RESISTIVITY ALUMINUM NITRIDE: CARBON (ALN:C) FILMS GROWN BY METAL ORGANIC
CHEMICAL VAPOR DEPOSITION, K. Wongchotiqul, N. Chen, D.P. Zhang, X. Tang and
M.G. Spencer, Howard University, Materials Science Research Center of
Excellence School of Engineering, Washington, DC.
4:15 P.M. AAA5.6
GAS PHASE ADDUCT REACTIONS IN MOCVD GROWTH OF GAN, A. Thon and T. F.
Kuech, University of Wisconsin, Department of Chemical Engineering, Madison,
WI.
4:30 P.M. AAA5.7
PARASITIC REACTIONS BETWEEN ALKYLS AND AMMONIA IN NITRIDE MOCVD GROWTH,
Changhua Chen, Heng Liu, Dan Steigerwald, Bill Imler, Chihping Kuo,
Hewlett-Packard Optoelectronics Division, San Jose, CA; Mike Ludowise, Steve
Lester and Jun Amano, Hewlett-Packard Laboratories, Palo Alto, CA.
4:45 P.M. AAA5.8
THE STUDY OF AMMONIA-ASSISTED MOLECULAR BEAM EPITAXIAL GROWTH OF MG-DOPED GaN,
Z. Yang, L.K. Li and W.I. Wang, Columbia University, Department of
Electrical Engineering, New York, NY.
SESSION AAA6: POSTER SESSION
CHARACTERIZATION1
Chair: Zusana Lillienthal-Weber
Tuesday Evening, November 28
8:00 P.M.
Grand Ballroom (S)
AAA6.1 NH3 AS NITROGEN SOURCE IN MBE GROWTH OF GaN, M.
Kamp, M. Mayer, A. Pelzmann, S. Menzel, H.Y. Chung, T. Albrecht, H.
Sternschulte and K.J. Ebeling, University of Ulm, Department of
Optoelectronics, Ulm, Germany.
AAA6.2 LOW TEMPERATURE GROWTH OF AlN(0001) ON AN Al(111)
SUBSTRATE, John N. Russell Jr., and Victor M. Bermudez, Naval Research
Laboratory, Chemistry Division, Washington, DC.
AAA6.3 GROWTH AND CHARACTERIZATION OF AlN/GaN/AlGaN ON
SAPPHIRE (0001) BY PLASMA ASSISTED IONIZED SOURCE BEAM EPITAXY, J.M. Myoung,
Myung C. Yoo, K.H. Sim, O. Gluschenkov and K. Kim, University of
Illinois at Urbana-Champaign, Department of Electrical and Computer
Engineering, Urbana, IL.
AAA6.4 MBE GROWTH OF P-TYPE GaN ON N-TYPE SiC, D.
Korakakis, A. Sampath, I.D. Goepfert and T.D. Moustakas, Boston University,
Department of Electrical Comp. and System Engineering and Center for Photonics
Research, Boston, MA.
AAA6.5 PULSED LASER DEPOSITION OF EPITAXIAL WURTZITIC
ZINCBLENDE GaN THIN FILMS, David Feiler, R. Stanley Williams, University
of California, Los Angeles, Department of Chemistry Biochemistry, Los Angeles,
CA; A. Alex Talin, Hojun Yoon Mark S. Goorsky, University of California, Los
Angeles, Department of Materials Science Engineering, Los Angeles, CA.
AAA6.6 SINGLE CRYSTAL WURTZITE ALUMINUM NITRIDE GROWTH ON
SILICON USING SUPERSONIC GAS JETS, Scott A. Ustin, K.A. Brown, L. Lauhon
and W. Ho, Cornell University, Laboratory of Atomic and Solid State Physics and
Materials Science Center, Ithaca, NY.
AAA6.7 EPITAXIAL GROWTH OF AlN THIN FILMS ON SILICON AND
SAPPHIRE BY PULSED LASER DEPOSITION, R.D. Vispute, H. Wu, K. Jagannadham
and J. Narayan, North Carolina State University, Department of Materials
Science and Engineering, Raleigh, NC.
AAA6.8 DEPOSITION OF GALLIUM NITRIDE FILMS USING AMMONIA AND
TRIETHYLGALLIUM SEEDED HELIUM BEAMS, J.J. Sumakeris, R.K. Chilukuri,
North Carolina State University, Department of Chemical Engineering, Raleigh,
NC; R.F. Davis, North Carolina State University, Department of Materials
Science and Engineering, Raleigh, NC; and H.H. Lamb; North Carolina State
University, Department of Chemical Engineering, Raleigh, NC.
AAA6.9 THE GROWTH OF GALLIUM NITRIDE THIN FILMS USING
PLASMA-ENHANCED PULSED LASER DEPOSITION, Robert E. Leuchtner, L.
Hristakos, W. Brock and Y. Li, University of New Hampshire, Department of
Physics, Durham, NH.
AAA6.10 ION-BEAM SYNTHESIS OF GaN IN GaAs, X.W. Lin,
Lawrence Berkeley Laboratory, Materials Science Division, Berkeley, CA; R.
Maltez, M. Behar, UFRGS, Instituto de Fisica, Porto Alegre, Brazil; W. Swider,
Z. Liliental-Weber and J. Washburn, Lawrence Berkeley Laboratory, Materials
Science Division, Berkeley, CA.
AAA6.11 EPITAXIAL GROWTH OF GaN ON ScAlMgO4, E.S.
Hellman, C.D. Brandle, L.F. Schneemeyer, I. Brener, D. Wiesmann, T.
Siegrist, G.W. Berkstresser, D.N.E. Buchanan and E.H. Hartford, AT&T Bell
Laboratories, Murray Hill, NJ.
AAA6.12 HIGH TEMPERATURE GROWTH OF CUBIC BORON NITRIDE, R.
Clarke, C.A. Taylor, P. Encarnacion, University of Michigan, Harrison B.
Randall Laboratory of Physics, Ann Arbor, MI; and S. Fahy, University College,
Department of Physics, Cork, Ireland.
AAA6.13 HIGH-RESOLUTION X-RAY DIFFRACTION OF EPITAXIAL GaN
FILMS ON Si(100) AND SAPPHIRE BY ION-AND-PLASMA ASSISTED MBE, H. Homma,
University of Houston, Physics Department, Houston, TX; A. Bousetta, A.
Bensaoula, University of Houston, Space Vacuum Epitaxy Center, Houston, TX; and
S.C. Moss, University of Houston, Physics Department, Houston, TX.
AAA6.14 DEFECT CHARACTERIZATION IN GaN FILMS GROWN ON SAPPHIRE
BY MOCVD, X.J. Ning, F.R. Chien and P. Pirouz, Case Western Reserve
University, Department of Materials Science and Engineering, Cleveland, OH.
AAA6.15 DEFECT MICROSTRUCTURE OF THIN WURTZITE GaN FILMS GROWN
BY MBE, B.N. Sverdlov, A. Bochkarev, A. Salvador, H. Morkoc, University
of Illinois, Materials Research Laboratory and Coordinated Science Laboratory,
Urbana-Champaign, IL; David J. Smith and S.-C. Tsen, Arizona State University,
Center for Solid State Science and Department of Physics, Tempe, AZ.
AAA6.16 A MICROSCOPIC EVALUATION OF THE SURFACE AND BULK
DEFECT STRUCTURE OF OMVPE DEPOSITED GaN EPILAYERS, W. Qian, G.S. Rohrer
and M. Skowronski, Carnegie Mellon University, Department of Materials Science
and Engineering, Pittsburgh, PA.
AAA6.17 STRUCTURAL CHARACTERIZATION OF III-V NITRIDE ALLOYS
AND HETEROSTRUCTURES GROWN BY MOCVD, M. Schurman, C.Y. Hwang, Y.C. Lu,
W.E. Mayo, Rutgers University, Department of Mechanics and Materials Science,
Piscataway, NJ; C. Yuan and R.A. Stall, EMCORE Corp., Somerset, NJ.
AAA6.18 AN ATOMIC FORCE MICROSCOPY STUDY OF THE INITIAL
NUCLEATION OF GaN ON SAPPHIRE, M. Richards-Babb, West Virginia
University, Department of Chemistry, Morgantown, WV; S. L. Buczkowski, Zhonghai
Yu and T.H. Myers, West Virginia University, Physics Department, Morgantown,
WV.
AAA6.19 MICROSTRUCTURAL CHARACTERIZATIONS OF GaN FILMS ON
OFF-AXIS (111) Si SUBSTRATES, F.R. Chien, X.J. Ning, P. Pirouz, Case
Western Reserve University, Department of Materials Science and Engineering,
Cleveland, OH; K. Stevens, A.F. Schwartzman and R. Beresford, Brown University,
Division of Engineering, Providence, RI.
AAA6.20 THE MICROSTRUCTURAL STUDY OF ALUMINUM NITRIDE THIN
FILMS: EPITAXY ON THE TWO ORIENTATIONS OF SAPPHIRE AND TEXTURING ON Si, K.
Dovidenko, S. Oktyabrsky, J. Narayan, North Carolina State University,
Department of Materials Science and Engineering, Raleigh, NC; and M. Razeghi,
Northwestern University, Center for Quantum Devices, Evanston, IL.
AAA6.21 ELECTROREFLECTANCE FROM GALLIUM NITRIDE USING
SECOND-HARMONIC GENERATION, J. Miragliotta and D.K.Wickenden, Johns
Hopkins University, Laurel, MD.
AAA6.22 CONDUCTIVITY MEASUREMENTS ON GaN GROWN BY HYDRIDE
VAPOR PHASE EPITAXY, M. Ben-Chorin, J. Diener, B.K. Meyer, D. Volm,
Technical University Munich, Department of Physics, Garching, Germany; T.
Detchprohm, Nagoya University, School of Engineering, Nagoya, Japan; H. Amano
and I. Akasaki, Meijo University, Department of Electrical and Electronical
Engineering, Nagoya, Japan.
AAA6.23 NEGATIVE DIFFERENTIAL RESISTIVITY IN GaN
METAL-SEMICONDUCTOR-METAL PHOTOCONDUCTORS, Z.C. Huang, Hughes STX
Corporation, Greenbelt, MD; J.C. Chen, University of Maryland, Department of
Electrical Engineering, Baltimore, MD; Youdou Zheng, Nanjing University,
Department of Physics, Nanjing, China; and B.D. Mott, Goddard Space Flight
Center, NASA, Greenbelt, MD.
AAA6.24 OPTICAL PROPERTIES OF WURTZITE - AND ZINCBLENDE - GaN
FILMS GROWTH BY RF PLASMA-MBE, F. Semendy, N. Bambha, Army Research
Laboratory, Fort Belvoir, VA; J.G. Kim, H. Liu and R.M. Park, University of
Florida, Department of Materials Science and Engineering, Gainesville, FL.
AAA6.25 CHARACTERIZATION OF GaN FILMS ON SiC BY RAMAN
SCATTERING, V.Yu. Davydov, I.N. Goncharuk, I.P. Nikitina, G.G. Zegrya,
A.F. Ioffe Institute, St. Petersburg, Russia; and V.A. Dmitriev, Cree Research
Inc., Durham, NC.
AAA6.26 EXCITON DYNAMICS IN GaN, J.P. Bergman, C.I. Harris,
B. Monemar, Linköping University, Department of Physics and
Measurement Technology, Linköping, Sweden; H. Amano and I. Akasaki, Meijo
University, Electrical and Electronic Engineering, Nagoya, Japan.
SESSION AAA7: LATTICE MATCH AND DEFECTS
Chairs: Oliver Brandt and M. Koike
Wednesday Morning, November 29
Republic Ballroom (S)
8:30 A.M. *AAA7.1
GROWTH AND PROPERTIES OF BULK SINGLE CRYSTALS OF GaN, T. Suski,
UNIPRESS, High Pressure Research Center, Polish Academy of Sciences, Warszawa,
Poland.
9:00 A.M. *AAA7.2
LATTICE-MATCHING GROWTH OF InGaAIN SYSTEMS, Takashi Matsuoka, NTT
Opto-electronics Laboratories, Kanagawa, Japan.
9:30 A.M. AAA7.3
EPITAXIAL GROWTH OF GaN ON LATTICE MATCHED HAFNIUM SUBSTRATES, R.
Beresford, M. Kinniburgh, K.S. Stevens, C. Briant, B. Rong and D.C. Paine,
Brown University, Division of Engineering, Providence, RI.
9:45 A.M. AAA7.4
PROPERTIES OF GaN EPITAXIAL LAYER GROWN BY MOVPE ON MgAl2O4 SUBSTRATE, Akito
Kuramata, Kazuhiko Horino, Kay Domen, Reiko Soejima and Toshiyuki
Tanahashi, Fujitsu Laboratories Ltd., Atsugi, Japan.
10:00 A.M. BREAK
10:30 A.M. *AAA7.5
STRUCTURAL DEFECT IN GaN AND RELATED COMPOUNDS, Z. Liliental-Weber,
Lawrence Berkeley Laboratory, Berkeley, CA.
11:00 A.M. AAA7.6
TEM CHARACTERIZATION OF GaN LAYERS GROWN BY MOCVD ON (0001) Al2O3, Jean-Luc
Rouviere, Magali Arlery, Alain Bourret, CEA/CENG-DRFMC, Grenoble, France;
Niebuhr Rene and Karl-Heins Bachem, Fraunhofer-Institut IAF, Freiburg,
Germany.
11:15 A.M. AAA7.7
GROWTH DEFECTS IN GaN FILMS ON 6H-SiC SUBSTRATES, F.R. Chien, X.J. Ning,
P. Pirouz, Case Western Reserve University, Department of Materials Science and
Engineering, Cleveland, OH; F. Bremser and R.F. Davis, North Carolina State
University, Department of Materials Science and Engineering, Raleigh, NC.
11:30 A.M. AAA7.8
DEFECT STUDIES OF GaN UNDER LARGE HYDROSTATIC PRESSURE, C. Wetzel, S.
Fischer, W. Walukiewicz, J. Ager III, E.E. Haller, University of California,
Berkeley, Lawrence Berkeley Laboratory, Berkeley, CA; I. Grzegory, S. Porowski
and T. Suski, Unipress, Polish Academy of Sciences, Warszawa, Poland.
11:45 A.M. AAA7.9
LUMINESCENCE SPECTROSCOPY AND IMAGING OF ALUMINUM GALLIUM NITRIDE FILMS,
Lawrence H. Robins, National Institutes of Standards and Technology,
Gaithersburg, MD; and Dennis K. Wickenden, Johns Hopkins University, Applied
Physics Laboratory, Laurel, MD.
SESSION AAA8: MATERIALS ISSUES
Chairs: Tadek Suski and U. Kaufmann
Wednesday Afternoon, November 29
Republic Ballroom (S)
1:30 P.M. *AAA8.1
HYDROGEN IN III-V NITRIDES, N.M. Johnson and W. Götz, Xerox PARC,
Palo Alto, CA.
2:00 P.M. *AAA8.2
GROWTH AND DOPING OF GaN AND AlxGa1-xN FILMS VIA MOVPE AND GSMBE AND THEIR
OPTICAL, MICROSTRUCTURAL AND ELECTRICAL CHARACTERIZATION, Robert F.
Davis, T.W. Weeks Jr., M.D. Bremser, S.K. Ailey, W.G. Perry, Z. Sitar, C.
Wang and K. Linthicum, North Carolina State University, Department of Materials
Science and Engineering, Raleigh, NC.
2:30 P.M. AAA8.3
EFFECTS OF SAPPHIRE SUBSTRATE MISORIENTATION ON III-V NITRIDE EPITAXIAL LAYERS,
Kirk G. Fertitta, Adrian L. Holmes, Paul A. Grudowski, Frank J. Ciuba,
Russell D. Dupuis, University of Texas, The Microelectronics Research
Center, Austin, TX; and Fernando A. Ponce, Xerox PARC, Palo Alto, CA.
2:45 P.M. AAA8.4
PHOTOLUMINESCENCE STUDY ON HYDROGEN PASSIVATION IN Mg-DOPED P-TYPE GALLIUM
NITRIDE, Y. Li, Y. Lu, Rutgers University, Department of Electrical and
Computer Engineering, Piscataway, NJ; H. Shen, M. Wraback, U.S. Army Research
Labs; C-Y. Hwang, M. Schurman, W. Mayo, Rutgers University, Department of
Mechanics and Material Science, Piscataway, NJ; C. Yuan, T. Salagaj and R.A.
Stall, Emcore Corporation, Somerset, NJ.
3:00 P.M. BREAK
3:30 P.M. *AAA8.5
DRY ETCHING OF III-V NITRIDES, S.J. Pearton, University of Florida,
Department of Materials Science and Engineering, Gainesville, FL; R.J. Shul,
Sandia National Laboratories, Albuquerque, NM; G.F. McLane, Army Research
Laboratory, Ft. Monmouth, NJ.
4:00 P.M. AAA8.6
DRY ETCHING OF GALLIUM NITRIDE, A.T. Ping, A.C. Schmitz, I. Adesida,
University of Illinois at Urbana-Champaign, Center for Compound Semiconductor
Microelectronics, Urbana, IL; and M. Asif Khan, APA Optics, Inc., Blaine,
MN.
4:15 P.M. AAA8.7
ION IMPLANTATION OF GaN AT ELEVATED TEMPERATURES, S. Strite, P.W.
Epperlein, IBM Research Division, Zurich Research Laboratory, Rüschlikon,
Switzerland; A. Dommann, Neu-Technikum Buchs, Buchs, Switzerland; and A.
Rockett, University of Illinois, Materials Research Laboratory, Urbana, IL.
4:30 P.M. AAA8.8
ION IMPLANTATION DOPING AND HIGH TEMPERATURE ANNEALING OF GaN, J.C.
Zolper, M. Hagerott Crawford, A.J. Howard, Sandia National Laboratories,
Albuquerque, NM; S.J. Pearton, C.R. Abernathy, C.B. Vartuli, University of
Florida, Department of Materials Science and Engineering, Gainesville, FL; C.
Yuan, R.A. Stall, Emcore Corporation, Somerset, NJ; J. Ramer and S.D. Hersee,
University of New Mexico, Albuquerque, NM.
4:45 P.M. AAA8.9
THE STUDY OF THE ROLE OF IMPURITIES IN LP-MOCVD GROWN GALLIUM NITRIDE, C.Y.
Hwang, Y. Li, M. Schurman, W.E. Mayo, Y. Lu, Rutgers University,
Piscataway, NJ; C. Yuan and R.A. Stall, EMCORE Corporation, Somerset, NJ.
SESSION AAA9: POSTER SESSION
ELECTRONIC PROPERTIES
Chair: John Edmond
Wednesday Evening, November 29
8:00 P.M.
Grand Ballroom (S)
AAA9.1 ELECTRONIC PROPERTIES OF AlGaN/GaN DOUBLE QUANTUM
WELLS, Rong Zhang, Kai Yang, Bo Shen, Linhong Qin, Zhizhong Chen and Youdou
Zheng, Nanjing University, Department of Physics, Nanjing, China; Z.C.
Huang and J.C. Chen, University of Maryland, Department of Electrical
Engineering, Baltimore, MD.
AAA9.2 CHARACTERIZATION OF PULSED LASER DEPOSITED GaN FILMS BY
NEAR EDGE ABSORPTION FINE STRUCTURE (NEXAFS), D.K. Shuh, W.M. Tong, I.
Jimenez, Lawrence Berkeley National Laboratory, Berkeley, CA; D. Feiler, R.S.
Williams, University of California, Los Angeles, CA; J.A. Carlisle, D.G.J.
Sutherland, L.J. Terminello, Lawrence Livermore National Laboratory, Livermore,
CA; and F.J. Himpsel, IBM T.J. Watson Research Center, Yorktown Heights, NY.
AAA9.3 INFRARED ABSORPTION AND ELECTRON SPIN RESONANCE
SPECTROSCOPIES OF MICROCRYSTALLINE CUBIC BORON NITRIDE/AMORPHOUS HYDROGENATED
BORON NITRIDE MIXED PHASE THIN FILMS, Shu-Han Lin, Ian M. Brown and Bernard
J. Feldman, University of Missouri, St. Louis, MO.
AAA9.4 TEMPERATURE DEPENDENCE OF THE ABSORPTION BAND GAP EDGE
OF GaN, M.O. Manasreh and A.K. Sharma, Phillips Laboratory, Kirtland
AFB, NM.
AAA9.5 NEAR-BANDGAP PHOTOLUMINESCENCE DECAY TIME IN GaN
EPITAXIAL LAYERS GROWN ON SAPPHIRE, A.Hangleiter, T. Forner, Jin-Seo Im,
V. Härle and F. Scholz, University of Stuttgart, Stuttgart, Germany.
AAA9.6 EXCITON LUMINESCENCE OF SINGLE-CRYSTAL GaN, J.R.
Müllhäuser, O. Brandt, H. Yang K. Ploog, Paul-Drude-Institut
für Festkörperelektronik, Berlin, Germany.
AAA9.7 TRANSITION METAL LUMINESCENCE IN AlN CRYSTALS, K.
Pressel, S. Nilsson, Institut für Halbleiterphysik, Frankfurt/Oder,
Germany; R. Heitz, A. Hoffmann, Technische Universität Berlin, Institut
für Festkörperphysik, Berlin, Germany; and B.K. Meyer, Technische
University, München, Germany.
AAA9.8 EXCITONIC RECOMBINATION PROCESSES IN UNDOPED AND DOPED
WURTZITE GaN FILMS DEPOSITED ON SAPPHIRE SUBSTRATES, J.A. Freitas Jr.,
Sachs/Freeman Associates Inc., Landover, MD; K. Doverspike and A.E. Wickenden,
Naval Research Laboratory, Washington, DC.
AAA9.9 IDENTIFICATION OF TRANSITION METALS IN GaN GROWN ON
6H-SiC SUBSTRATE BY PHOTOLUMINESCENCE, R. Heitz, Technical University Berlin,
Berlin, Germany; K. Pressel, IHP Frankfurt/Oder, Germany; L. Eckey, I.
Loa, P. Thurian, A. Hoffmann, Technical University Berlin, Berlin, Germany; and
B.K. Meyer, Technical University München, Garching, Germany.
AAA9.10 MAGNETO-OPTIC STUDIES OF GaN FILMS AND GaN/AlGaN
HETEROSTRUCTURES, Y.J. Wang, H.K. Ng, Florida State University, National
High Magnetic Field Laboratory, Tallahassee, FL; R. Kaplan, K. Doverspike, D.K.
Gaskill, Naval Research Laboratory, Washington, DC; T. Ikedo, I. Akasaki and H.
Amono, Meijo University, Nagoya, Japan.
AAA9.11 PHOTOCONDUCTIVITY STUDIES OF GaN THIN FILMS AND
GaN-BASED LEDs, C.H. Qiu, M.W. Leksono, C. Walker, J.I. Pankove,
Astralux Inc., Boulder, CO; W. Melton and C. Hoggatt, University of Colorado,
Boulder, CO.
AAA9.12 PICOSECOND RAMAN STUDIES OF ELECTRON-PHONON
INTERACTIONS IN THE WIDE BANDGAP SEMICONDUCTOR GaN, K.T. Tsen, Arizona
State University, Department of Physics and Astronomy, Tempe, AZ; D.K. Ferry,
Arizona State University, Electrical Engineering Department, Tempe, AZ; A.
Botchkarev, B. Sverdlov, A. Salvador and H. Morkoc, University of Illinois,
Coordinated Science Laboratory, Urbana, IL.
AAA9.13 AB INITIO STUDY OF RECONSTRUCTION OF GaN NONPOLAR
SURFACES, Ravindra Pandev, Peter Zapol, Michigan Technological
University, Department of Physics, Houghton, MI; and John E. Jaffe, Pacific
Northwest Laboratory, Molecular Sciences Research Department, Richland, WA.
AAA9.14 THE PHONON DENSITIES OF STATES OF WURTZITE A1N AND
ZrN, C.K. Loong, Argonne National Laboratory, Argonne, IL.
AAA9.15 NUMERIC SIMULATION OF OPTICAL CONFINEMENT IN iii-V
NITRIDE DOUBLE HETEROSTRUCTURES, V. Bougrov and A. Zubrilov, Ioffe
Institute and Cree Research EED, Inc., St. Petersburg, Russia.
AAA9.16 THEORY OF OPTICAL GAIN IN BULK AND QUANTUM WELL GROUP
III-NITRIDES, W.W. Chow, A.F. Wright, Sandia National Laboratories,
Albuquerque, NM; A. Knorr, A. Girndt and S.W. Koch, Philipps University,
Marburg, Germany.
AAA9.17 ELASTIC CONSTANTS AND RELATED PROPERTIES OF THE
GROUP-III NITRIDES, Kwiseon Kim, Walter R.L. Lambrecht and Benjamin
Segall, Case Western Reserve University, Department of Physics, Cleveland,
OH.
AAA9.18 LUMINESCENCE IN GaN SAMPLES, C. Xavier, T.
Monteiro, E. Pereira, Universidade de Aveiro, Departimento de Fisica, Aveiro,
Portugal; D.M. Hofman, D. Volm, G. Steude and B.K. Meyer, Technische
Universität Munchen, Department of Physics, Munchen, Germany.
AAA9.19 FINE STRUCTURE OF THE 3.42 eV EMISSION BAND IN GaN, S.
Fischer, C. Wetzel, W. Walukiewicz and E.E. Haller, University of
California, Berkeley, Lawrence Berkeley Laboratory, Berkeley, CA.
AAA9.20 SPATIALLY RESOLVED LUMINESCENCE AND RAMAN STUDY ON THE
GaN/SUBSTRATE INTERFACE, H. Siegle, C. Thomsen, L. Eckey, A. Hoffmann,
P. thurian, Technische Universität Berlin, Institut für
Festkörperphysik, Berlin, Germany; B.K. Meyer, Technische Universität
München, Department of Physics, Garching, Germany; H. Amano and I.
Akasaki, Meijo University, Department of Electrical and Electronical
Engineering, Nagoya, Japan.
AAA9.21 MAGNESIUM DOPING OF GaN BY METALORGANIC CHEMICAL VAPOR
DEPOSITION, Hongqiang Lu and Ishwara Bhat, Rensselaer Polytechnic
Institute, Troy, NY.
AAA9.22 STABILITY AND VIBRATIONAL MODES OF H AND THE H-Mg
COMPLEX IN GaN, Andrea Bosin, Vincenzo Fiorentini, Università di
Cagliari, INFM/Dipartimento Scienze Fisiche, Cagliari, Italy; and David
Vanderbilt, Rutgers University, Department of Physics, Piscataway, NJ.
AAA9.23 ACCEPTORS AND H-ACCEPTOR COMPLEXES IN GaN: Be, C, Mg,
Ca, AND Zn, Vincenzo Fiorentini, Andrea Bosin, INFM/Dipartimento Scienze
Fisiche, Cagliari, Italy; Kurt Stokbro, Riccardo Valente, SISSA, Trieste,
Italy; and Stefano Baroni, INFM and SISSA, Trieste, Italy, and CECAM, Lyon,
France.
AAA9.24 DEFECTS IN GaN GROWN BY ORGANOMETALLIC VAPOR PHASE
EPITAXY USING TRIMETHYLGALLIUM AND TRIETHYLGALLIUM, Wei-I Lee and
Tsung-Cheng Huang, National Chiao Tung University, Department of
Electrophysics, Hsinchu, Taiwan; Jeng-Da Guo and Ming-Shien Feng, National
Chiao Tun University, Institute of Materials Science and Engineering, Hsinchu,
Taiwan.
AAA9.25 GROWTH OF GAN WITHOUT YELLOW LUMINESCENCE, Xiaolong
Zhang, Patrick Kung and M. Razeghi, Northwestern University, Center for
Quantum Devices, Department of Electrical Engineering and Computer Sciences,
Evanston, IL.
AAA9.26 ELECTRONIC STRUCTURES OF VACANCIES IN CUBIC GALLIUM
NITRIDE, Alan F. Wright, J.S. Nelson, Sandia National Laboratories,
Albuquerque, NM; V.A. Gubanov, California State University, San Jose,
Department of Physics, San Jose, CA; C.Y. Fong and Barry M. Klein, University
of California, Davis, Department of Physics, Davis, CA.
AAA9.27 STRUCTURE AND QUASIPARTICLE ENERGIES OF CUBIC,
WURTZITE AND HEXAGONAL BN, Giancarlo Cappellini, Università di
Cagliari, INFM/Istituto di Fisica, Facade di Medicina, Cagliari, Italy;
Vincenzo Fiorentini, Università di Cagliari, INFM/Dipartimento Scienze
Fisiche, Cagliari, Italy; Katrin Tenelsen and Friedhelm Bechstedt, FSU Jena,
Germany.
SESSION AAA10: POINT DEFECTS
Chairs: Noble Johnson and R. Davis
Thursday Morning, November 30
Republic Ballroom (S)
8:30 A.M. *AAA10.1
THEORY OF POINT DEFECTS AND COMPLEXES IN GaN, Jörg Neugebauer and
Chris G. Van de Walle, Xerox PARC, Palo Alto, CA.
9:00 A.M. *AAA10.2
OPTICAL SPECTROSCOPY AND MAGNETIC RESONANCE OF IMPURITIES IN WURTZITE MOCVD
GaN/Al2O3, U. Kaufmann, M. Kunzer and C. Merz, Fraunhofer-IAF, Freiburg,
Germany.
9:30 A.M. AAA10.3
MAGNETIC RESONANCE STUDIES OF RECOMBINATION PROCESSES IN GaN-BASED LIGHT
EMITTING DIODES, W.E. Carlos, E.R. Glaser, T.A. Kennedy, Naval Research
Laboratory, Washington, DC; and S. Nakamura, Nichia Chemical Industries, Ltd,
Tokushima, Japan.
9:45 A.M. AAA10.4
DETECTION OF MAGNETIC RESONANCE ON SHALLOW DONOR - SHALLOW ACCEPTOR AND DEEP
(2.2 eV) RECOMBINATION BANDS FROM GaN FILMS GROWN ON 6H-SiC, E.R.
Glaser, T.A. Kennedy, S.W. Brown, Naval Research Laboratory, Washington,
DC; J.A. Freitas Jr., Sachs Freeman Associates, Landover, MD; W.G. Perry, M.D.
Bremser, T.W. Weeks and R.F. Davis, North Carolina State University, Raleigh,
NC.
10:00 A.M. BREAK
10:30 A.M. *AAA10.5
SHALLOW AND DEEP ELECTRONIC LEVELS IN GaN, W. Götz, Xerox PARC,
Palo Alto, CA.
11:00 A.M. AAA10.6
SPATIAL DISTRIBUTION OF THE LUMINESCENCE IN GaN THIN FILMS, F.A. Ponce,
D.P. Bour, W. Götz, Xerox PARC, Palo Alto, CA; and P.J. Wright, Oxford
Instruments, Oxon, United Kingdom.
11:15 A.M. AAA10.7
EXCITATION WAVELENGTH AND SATURATION EFFECTS ON GALLIUM NITRIDE
PHOTOLUMINESCENCE, Mike Banas, Guangtian Liu, Jeff Ramer, Kang Zheng,
Steve Hersee and Kevin Malloy, University of New Mexico, Center for High
Technology Materials, Albuquerque, NM.
11:30 A.M. AAA10.8
DYNAMICAL STUDY OF SURFACE AND INTERFACE LUMINESCENCES FROM EPITAXIAL GaN,
L. Eckey, H. Siegle, A. Hoffmann, Technische Universität Berlin,
Institut für Festkörperphysik, Berlin, Germany; B.K. Meyer,
Technische Universität München, Department of Physics, Garching,
Germany; H. Amano and I. Akasaki, Meijo University, Department of Electrical
and Electronical Engineering, Nagoya, Japan.
11:45 A.M. AAA10.9
LIGHT EMISSION AND MICROSCOPIC STRUCTURE OF MBE GROWN GaN FILMS, Christian
Kisielowski, University of California, Materials Science Department,
Berkeley, CA; Zuzanna Liliental-Weber, Lawrence Berkeley Laboratory, Materials
Science Division, Berkeley, CA; Nate Newman, Xiao Liu, University of
California, Materials Science Department, Berkeley, CA; Wendy Swider, Lawrence
Berkeley Laboratory, Materials Science Division, Berkeley, CA; and Eicke R.
Weber, University of California, Materials Science Department, Berkeley, CA.
SESSION AAA11: ELECTRONIC AND OPTICAL PROPERTIES
Chairs: Barbara Goldenberg and Werner Gotz
Thursday Afternoon, November 30
Republic Ballroom (S)
1:30 P.M. *AAA11.1
ELECTRONIC AND OPTICAL PROPERTIES OF THE GROUP-III NITRIDES, THEIR
HETEROSTRUCTURES AND ALLOYS, Walter R.L. Lambrecht, Kwiseon Kim, Walter
R.L. Lambrecht and Benjamin Segall, Case Western Reserve University, Department
of Physics, Cleveland, OH.
2:00 P.M. *AAA11.2
(NEGATIVE) ELECTRON AFFINITY OF AlN AND AlGaN ALLOYS, R.J. Nemanich,
M.C. Benjamin, M.C. Benjamin, S.W. King, M.D. Bremser, R.F. Davis, B. Chen, Z.
Zhang and J. Bernholc, North Carolina State University, Department of Physics
and Department of Materials Science and Engineering, Raleigh, NC.
2:30 P.M. AAA11.3
INTERFACIAL REACTIONS BETWEEN METAL THIN FILMS AND p-GaN, J.T. Trexler,
S.J. Miller, P.H. Holloway, University of Florida, Department of Materials
Science and Engineering, Gainesville, FL; and M. Asif Khan, APA Optics Inc.,
Blaine, MN.
2:45 P.M. AAA11.4
PHOTOLUMINESCENCE RELATED TO THE 2D ELECTRON GAS AT A GaN/AlGaN
HETEROINTERFACE, J.P. Bergman, T. Lundström, B. Monemar,
Linköping University, Department of Physics and Measurement Technology,
Linköping, Sweden; H. Amano and I. Akasaki, Meijo University, Department
of Electrical and Electronic Engineering, Nagaoya, Japan.
3:00 P.M. BREAK
3:30 P.M. *AAA11.5
SPIN-DEPENDENT TRANSPORT IN GaN-LIGHT EMITTING DIODES, M.S. Brandt, N.M.
Reinacher and M. Stutzmann, Technical University Munich, Walter Schottky
Institut, Munich, Germany.
4:00 P.M. AAA11.6
ROLE OF CARBON IMPURITIES IN GAN PREPARED BY MOCVD, M.S. Brandt, P. de Mierry
and M. Stutzmann, Technical University Munich, Garching, Germany.
4:15 P.M. AAA11.7
ANALYSIS OF STRAIN IN GaN ON Al2O3 AND 6H-SiC, N.V. Edwards, M.D.
Bremser, T.W. Weeks Jr., North Carolina State University, Department of
Materials Science Engineering, Raleigh, NC; H. Liu, EMCORE, Somerset, NJ (now
at Hewlett-Packard, San Jose, CA); A.E. Wickenden, K. Doverspike, Naval
Research Laboratory, Washington, DC; R.A. Stall, EMCORE, Somerset, NJ; D.K.
Gaskill, Naval Research Laboratory, Washington, DC; J.A. Freitas, SFA,
Landover, MD; R.F. Davis, North Carolina State University, Materials Science,
Raleigh, NC; and D.E. Aspnes, North Carolina State University, Physics
Department, Raleigh, NC.
4:30 P.M. AAA11.8
ON COMPENSATION AND IMPURITIES IN STATE-OF-THE-ART GaN EPILAYERS GROWN ON
SAPPHIRE, A.E. Wickenden, D.K. Gaskill and K. Doverspike, Naval Research
Laboratory, Laboratory for Advanced Materials Synthesis, Washington, DC.
4:45 P.M. AAA11.9
GaN THREE DIMENSIONAL NANOSTRUCTURES, V. Dmitriev and K. Irvine, Cree
Research Inc., Durham, NC; A. Zubrilov, D. Tsvetkov, V. Nikolaev, Cree Research
EED, St. Petersburg, Russia, M. Jakobson, D. Nelson and A. Sitnikova, A.F.
Ioffe Institute, St. Petersburg, Russia.
SESSION AAA12: POSTER SESSION
PHYSICAL PHENOMENA
Chair: Russell Dupuis
Thursday Evening, November 30
8:00 P.M.
Grand Ballroom (S)
AAA12.1 METASTABLE STATES IN GaN STUDIED BY THERMALLY
STIMULATED CURRENT SPECTROSCOPY, Z.C. Huang, Hughes STX Corporation,
Greenbelt, MD; J.C. Chen, University of Maryland, Department of Electrical
Engineering, Baltimore, MD; and B.D. Mott, Goddard Space Flight Center, NASA,
Greenbelt, MD.
AAA12.2 SIMULATED ANNEALING EFFECTS ON THE STRUCTURAL AND
ELECTRONIC PROPERTIES OF CRYSTALLINE GaN, Stefano Serra, Università di
Milano, Dipartimento di Fisica, Milano, Italy; Vincenzo Fiorentini,
Università di Cagliari, Dipartimento di Scienze Fisiche, Cagliari,
Italy; and Leo Miglio, Università di Milano, Dipartimento di
Fisica, Milano, Italy.
AAA12.3 DIELECTRIC FUNCTIONS OF WURTZITE AND ZINCBLENDE
STRUCTURE GaN, R. Wang, P.P. Ruden, University of Minnesota, Department
of Electrical Engineering, Minneapolis, MN; J. Kolnik, I. Oguzman and K.F.
Brennan, Georgia Institute of Technology, School of Electrical and Computer
Engineering, Atlanta, GA.
AAA12.4 ELECTRONIC STRUCTURES OF WIDE BANDGAP
(GaN)m/(AlN)n [001] SUPERLATTICES, Z.-J. Tian, National
Research Council of Canada, Ottawa, Canada, and Université de
Montréal, Montréal, Canada; M.W.C. Dharma-Wardana, G.C. Aers,
National Research Council of Canada, Ottawa, Canada; and L.J. Lewis,
Université de Montréal, Montréal, Canada.
AAA12.5 STRUCTURAL AND ELECTRONIC PROPERTIES OF AlN, GaN, AND
InN, AND BAND OFFSETS AT AlN/GaN (0001) AND (100) INTERFACES, Alessandra
Satta, Vincenzo Fiorentini, Andrea Bosin, Franco Meloni, INFM/Dipartimento
Scienze Fisiche, Cagliari, Italy; and David Vanderbilt, Rutgers University,
Department of Physics, Piscataway, NJ.
AAA12.6 XPS MEASUREMENT OF THE SiC/AlN BAND-OFFSET AT THE
(0001) INTERFACE, Sean King, M.C. Benjamin, R.J. Nemanich, R.F. Davis,
North Carolina State University, Department of Materials Science and
Engineering and Physics, Raleigh, NC; and W.R.L. Lambrecht, Case Western
University, Department of Physics, Cleveland, OH.
AAA12.7 MONTE CARLO CALCULATION OF HOLE TRANSPORT IN BULK
ZINCBLENDE PHASE OF GAN INCLUDING A PSEUDOPOTENTIAL CALCULATED BAND STRUCTURE,
I.H. Oguzman, J. Kolnik, K.F. Brennan, Georgia Tech School of Electrical
and Computer Engineering, Atlanta, GA; R. Wang and P.P. Ruden, University of
Minnesota, Department of Electrical Engineering, Minneapolis, MN; and Y. Wang,
Motorola Inc., Tempe, AZ.
AAA12.8 THEORETICAL STUDY OF ELECTRON INITIATED IMPACT
IONIZATION RATE IN BULK GAN USING A WAVE-VECTOR DEPENDENT NUMERICAL TRANSITION
RATE FORMULATION, J. Kolnik, I. Oguzman, K.F. Brennan, Georgia Tech,
School of Electrical and Computer Engineering, Atlanta, GA; R. Wang and P.P.
Ruden, University of Minnesota, Department of Electrical Engineering,
Minneapolis, MN; and Y. Wang, Motorola Inc., Tempe, AZ.
AAA12.9 ANNEALING STUDY OF ION IMPLANTED MOCVD AND MBE GROWN
GaN, Eric Silkowski, Yung Kee Yeo and Robert Hengehold, Air Force
Institute of Technology, WPAFB, OH; M. Asif Khan, APA Optics, Blaine, MN; Ting
Lei and Keith Evans, Wright Laboratory, WPAFB, OH.
AAA12.10 PHOTOLUMINESCENCE OF RARE EARTH IMPLANTED
GaN/SAPPHIRE, Tiesheng Li, Henryk Lozykowski and Amer K. Alshawa, Ohio
University, Department of Electrical and Computer Engineering, Athens, OH.
AAA12.11 ROLE OF C, O AND H IN III-V NITRIDES, C.R.
Abernathy, S.J. Pearton, J.D. MacKenzie, J.W. Lee, C.B.Vartuli, University
of Florida, Department of Materials Science and Engineering, Gainesville, FL;
R.G. Wilson, Hughes Research Laboratories, Malibu, CA; R.J. Shul, J.C. Zolper,
Sandia National Laboratories, Albuquerque, NM; and J.M. Zavada, U.S. Army
Research Laboratory, Research Triangle Park, NC.
AAA12.12 EX SITU AND IN SITU METHODS FOR OXIDE AND CARBON
REMOVAL FROM AlN AND GaN SURFACES, S.W. King, L.S. Smith, J.P. Barnak,
North Carolina State University, Department of Materials Science and
Engineering, Raleigh, NC; Ja-Hum Ku, J.A. Christman, M.C. Benjamin, North
Carolina State University, Department of Physics, Raleigh, NC; M.D. Bremser,
North Carolina State University, Department of Materials Science and
Engineering, Raleigh, NC; R.J. Nemanich, North Carolina State University,
Department of Physics, Raleigh, NC; and R.F. Davis, North Carolina State
University, Department of Materials Science and Engineering, Raleigh, NC.
AAA12.13 ION DAMAGE ANNEALING OF EPITAXIAL GaN LAYERS AND
COMPARISON WITH GaAs/AlGaAs MATERIALS, H.H. Tan, J.S. Williams, The
Australian National University, Research School of Physical Sciences and
Engineering, Department of Electronic Materials Engineering, Canberra,
Australia; C. Yuan, EMCORE Corporation, Somerset, NJ; and S.J. Pearton,
University of Florida, Department of Materials Science Engineering,
Gainesville, FL.
AAA12.14 A GAS PHASE CHEMICAL ETCHANT FOR BORON NITRIDE FILMS,
Stephen J. Harris, Anita M. Weiner, General Motors R&D, Physical
Chemistry Department, Warren, MI; Gary L. Doll, General Motors R&D, Physics
Department, Warren, MI; and Derek C. Chance, Wayne State University, Physics
Department, Detroit, MI.
AAA12.15 THE EFFECT OF HIGH DENSITY PLASMA ETCHING ON THE
ELECTRONIC PROPERTIES OF GALLIUM NITRIDE, C.R. Eddy Jr. and B. Molner,
Naval Research Laboratory, Washington, DC.
AAA12.16 PLASMA CHEMISTRY DEPENDENT ECR ETCHING OF GaN,
R.J. Shul, A.J. Howard, Sandia National Laboratories, Albuquerque, NM;
S.J. Pearton, C.R. Abernathy, C.B. Vartuli, University of Florida, Department
of Materials Science and Engineering, Gainesville, FL; and P.A. Barnes, Auburn
University, Auburn, AL.
AAA12.17 REACTIVE ION ETCHING OF AlN, AlGaN AND GaN USING
BCl3, W.C. Hughes, W.H. Rowland Jr., J.W. Cook Jr. and J.F. Schetzina,
North Carolina State University, Department of Physics, Raleigh, NC.
AAA12.18 WSix OHMIC CONTACTS ON InGaN, A. Durba, S.J.
Pearton, C.R. Abernathy, P.H. Holloway, University of Florida, Department of
Materials Science and Engineering, Gainesville, FL; and F. Ren, AT&T Bell
Laboratories, Murray Hill, NJ.
AAA12.19 SCHOTTKY CONTACTS ON N-TYPE GALLIUM NITRIDE, A.C.
Schmitz, A.T. Ping, I. Adesida, University of Illinois at Urbana-Champaign,
Center for Compound Semiconductor Microelectronics, Urbana, IL; and M. Asif
Khan, APA Optics, Inc., Blaine, MN.
AAA12.20 SCHOTTKY BARRIERS ON p-GaN, N.I. Kuznetsov,
E.V. Kalinina, V.A. Soloviev and V.A. Dmitriev, Cree Research EED, St.
Petersburg, Russia.
AAA12.21 POHTOCONDUCTIVITY IN N-TYPE GaN, Patrick Kung,
Xiaolong Zhang, Danielle Walker, Jósef Piotrowski, Antoni Rogalski and
Manijeh Razeghi, Center for Quantum Devices, Northwestern University,
Department of Electrical Engineering and Computer Science, Evanston, IL.
AAA12.22 EFFECTS OF HIGH CURRENT STRESS ON ELECTRICAL
PROPERTIES OF NICHIA AlGaN/InGaN/GaN BLUE LEDs, Joachim Zeller, Petr G. Eliseev
and Marek Osinski, University of New Mexico, Center for High Technology
Materials, Albuquerque, NM.
AAA12.23 ROOM TEMPERATURE LIFE TEST OF NICHIA AlGaN/InGaN/GaN
BLUE LIGHT EMITTING DIODES, Marek Osinski, B. Scott Phillips, University
of New Mexico, Center for High Technology Materials, Albuquerque, NM; Niel
Berg, Christopher J. Helms and Daniel L. Barton, Sandia National Laboratories,
Albuquerque, NM.
AAA12.24 GROWTH, CHARACTERIZATION AND DEVICE FABRICATION OF
GAN, Xiuling Li, Shi Qun Gu, Andrew M. Jones, S. David Roh, Erik E.
Reuter, Douglas A. Turnbull, Steve G. Bishop and James J. Coleman, University
of Illinois, Microelectronics Laboratory, Urbana, IL.
AAA12.25 CHARACTERISTICS OF A REACTIVELY SPUTTERED ALNx THIN
FILM STRAIN GAGE FOR USE AT ELEVATED TEMPERATURES, Otto J. Gregory,
Arnout Bruins Slot, Paul S. Amons, University of Rhode Island, Chemical
Engineering, Kingston, RI; and Everett E. Crisman, Brown University Chemical
Engineering, Providence, RI.
SESSION AAA13: DEVICE ISSUES
Chairs: Martin Brandt and John Edmond
Friday Morning, December 1
Republic Ballroom (S)
8:30 A.M. *AAA13.1
ULTRAVIOLET PHOTODETECTORS BASED ON GaN, B.L. Goldenberg, J.D. Zook, R.
Ulmer and S. Reimer, Honeywell Technology Center, Plymouth, MN.
9:00 A.M. *AAA13.2
UV-VISIBLE PHOT. AND ELECTRONIC DEVICES, M.A. Khan, Blaine, MM.
9:30 A.M. AAA13.3
METALLURGICAL STUDY OF ELECTRICAL CONTACTS TO GALLIUM NITRIDE, S.E.
Mohney, B.P. Luther, X. Lin, The Pennsylvania State University, Department
of Materials Science and Engineering, University Park, PA; and T.N. Jackson,
The Pennsylvania State University, Department of Electrical Engineering,
University Park, PA.
9:45 A.M. AAA13.4
CALCULATIONS OF THE SPECIFIC RESISTANCE OF CONTACTS TO III-V NITRIDE COMPOUNDS,
P.A. Barnes, X-J. Zhang, Auburn University, Department of Physics,
Auburn, AL; M.L. Lovejoy, T.J. Drummond, H.P. Hjalmarson, M. Crawford, R.J.
Shul and J.C. Zolper, Sandia National Laboratories, Albuquerque, NM.
10:00 A.M. BREAK
10:30 A.M. *AAA13.5
THE GROWTH OF GaN FILMS FOR HIGH FREQUENCY FET APPLICATIONS, K.
Doverspike, Hewlett Packard, Optoelectronics Division, San Jose, CA; A.E.
Wickenden, S.C. Binari, D.K. Gaskill, Naval Research Laboratory, Washington,
DC; and J.A. Frietas Jr., SFA Inc., Landover, MD.
11:00 A.M. AAA13.6
IMPROVED UNIFORMITY OF Ti/Al OHMIC CONTACTS TO n-GaN GROWN BY MOCVD, J.
Brown, J. Ramer, M. Banas, L.F. Lester, K.J. Malloy and S.D. Hersee,
University of New Mexico, Center for High Technology Materials, Albuquerque,
NM.
11:15 A.M. AAA13.7
OHMIC CONTACT FORMATION TO DOPED GaN, L.L. Smith, M.D. Bremser, E.P.
Carlson, T.W. Weeks Jr., North Carolina State University, Department of
Materials Science and Engineering, Raleigh, NC; Y. Huang, M.J. Kim, R.W.
Carpenter, Arizona State University, Center for Solid State Sciences, Tempe,
AZ; and R. F. Davis, North Carolina State University, Department of Materials
Science and Engineering, Raleigh, NC.
11:30 A.M. AAA13.8
ELECTRIC BREAKDOWN IN NITRIDE pn JUNCTIONS, V.A. Dmitriev, K.G. Irvine,
C.H. Carter Jr., Cree Research Inc., Durham, NC; N.I. Kuznetsov, Cree Research
EED and A.F. Ioffe Institute, St. Petersburg, Russia.
11:45 A.M. AAA13.9
SPECTRAL RESPONSE OF GAN P-N JUNCTION PHOTOVOLTAIC STRUCTURES, Danielle
Walker, Xialong Zhang, Patrick Kung, Józef Piotrowski, Antoni
Rogalski and M. Razeghi, Northwestern University, Center for Quantum Devices,
Department of Electrical Engineering and Computer Sciences, Evanston, IL.
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